DE69314973T2 - Verfahren zur Herstellung eines Zerstäubungstargets - Google Patents

Verfahren zur Herstellung eines Zerstäubungstargets

Info

Publication number
DE69314973T2
DE69314973T2 DE69314973T DE69314973T DE69314973T2 DE 69314973 T2 DE69314973 T2 DE 69314973T2 DE 69314973 T DE69314973 T DE 69314973T DE 69314973 T DE69314973 T DE 69314973T DE 69314973 T2 DE69314973 T2 DE 69314973T2
Authority
DE
Germany
Prior art keywords
producing
atomizing target
atomizing
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69314973T
Other languages
English (en)
Other versions
DE69314973D1 (de
Inventor
Michio Satou
Takashi Yamanobe
Takashi Ishigami
Mituo Kawai
Noriaki Yagi
Toshihiro Maki
Minoru Obata
Shigeru Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69314973D1 publication Critical patent/DE69314973D1/de
Publication of DE69314973T2 publication Critical patent/DE69314973T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/58085—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/58085—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides
    • C04B35/58092—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides based on refractory metal silicides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/65—Reaction sintering of free metal- or free silicon-containing compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
    • Y10T428/12049—Nonmetal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
    • Y10T428/12049—Nonmetal component
    • Y10T428/12056—Entirely inorganic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69314973T 1992-02-05 1993-02-04 Verfahren zur Herstellung eines Zerstäubungstargets Expired - Lifetime DE69314973T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4054259A JPH05214523A (ja) 1992-02-05 1992-02-05 スパッタリングターゲットおよびその製造方法

Publications (2)

Publication Number Publication Date
DE69314973D1 DE69314973D1 (de) 1997-12-11
DE69314973T2 true DE69314973T2 (de) 1998-04-09

Family

ID=12965565

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69314973T Expired - Lifetime DE69314973T2 (de) 1992-02-05 1993-02-04 Verfahren zur Herstellung eines Zerstäubungstargets

Country Status (5)

Country Link
US (1) US5418071A (de)
EP (2) EP0555085B1 (de)
JP (1) JPH05214523A (de)
KR (1) KR950012811B1 (de)
DE (1) DE69314973T2 (de)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2794382B2 (ja) * 1993-05-07 1998-09-03 株式会社ジャパンエナジー スパッタリング用シリサイドターゲット及びその製造方法
EP1118690A3 (de) * 1993-07-27 2001-09-26 Kabushiki Kaisha Toshiba Refraktärmetallisches Silizidtarget
JP3755559B2 (ja) * 1997-04-15 2006-03-15 株式会社日鉱マテリアルズ スパッタリングターゲット
US6569270B2 (en) 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
KR20010021722A (ko) 1997-07-11 2001-03-15 존슨매테이일렉트로닉스, 인코퍼레이티드 내부 금속성인 알루미늄 화합물 및 규소 화합물 스퍼터링타겟과 그의 생성방법
US6713391B2 (en) 1997-07-11 2004-03-30 Honeywell International Inc. Physical vapor deposition targets
WO1999002288A1 (en) * 1997-07-11 1999-01-21 Johnson Matthey Electronics, Inc. Intermetallic aluminides and silicides sputtering targets, and methods of making same
US6258719B1 (en) * 1998-07-01 2001-07-10 Honeywell International Inc. Intermetallic aluminides and silicides articles, such as sputtering targets, and methods of making same
WO1999003623A1 (en) * 1997-07-15 1999-01-28 Tosoh Smd, Inc. Refractory metal silicide alloy sputter targets, use and manufacture thereof
WO1999019102A1 (en) * 1997-10-14 1999-04-22 Tosoh Smd, Inc. Sputter targets and methods of making same
WO1999025892A1 (en) 1997-11-19 1999-05-27 Tosoh Smd, Inc. METHOD FOR MAKING Ni-Si MAGNETRON SPUTTERING TARGETS AND TARGETS MADE THEREBY
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6183686B1 (en) 1998-08-04 2001-02-06 Tosoh Smd, Inc. Sputter target assembly having a metal-matrix-composite backing plate and methods of making same
JP3820787B2 (ja) 1999-01-08 2006-09-13 日鉱金属株式会社 スパッタリングターゲットおよびその製造方法
US6165413A (en) * 1999-07-08 2000-12-26 Praxair S.T. Technology, Inc. Method of making high density sputtering targets
US6432819B1 (en) * 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
JP3628566B2 (ja) * 1999-11-09 2005-03-16 株式会社日鉱マテリアルズ スパッタリングターゲット及びその製造方法
JP2001131737A (ja) * 1999-11-09 2001-05-15 Nikko Materials Co Ltd スパッタリングターゲット及びその研削方法
US6878250B1 (en) * 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US6365639B1 (en) 2000-01-06 2002-04-02 Edgar Franklin Hoy Rheology, modified compositions exhibiting stress-dependent fluidity, modification agents therefor, and methods of making same
US7517417B2 (en) * 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US6331233B1 (en) 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
JP4596379B2 (ja) * 2001-07-09 2010-12-08 Ｊｘ日鉱日石金属株式会社 ゲート酸化膜形成用ハフニウムシリサイドターゲット
JP3995082B2 (ja) * 2001-07-18 2007-10-24 日鉱金属株式会社 ゲート酸化膜形成用ハフニウムシリサイドターゲット及びその製造方法
JP4921653B2 (ja) * 2001-08-13 2012-04-25 株式会社東芝 スパッタリングターゲットおよびその製造方法
JP2003066587A (ja) * 2001-08-24 2003-03-05 Shin Etsu Chem Co Ltd スパッタターゲット、並びに該スパッタターゲットを用いた位相シフトマスクブランク及び位相シフトマスクの製造方法
JP4204978B2 (ja) * 2001-12-19 2009-01-07 日鉱金属株式会社 磁性体ターゲットとバッキングプレートとの接合方法及び磁性体ターゲット
EP1511879A1 (de) * 2002-06-07 2005-03-09 Heraeus, Inc. Herstellung von duktilen intermetallischen sputtertargets
EP1528120B1 (de) * 2002-08-06 2011-04-13 Nippon Mining & Metals Co., Ltd. Hafniumsilicid-target und verfahren zu seiner herstellung
WO2004099458A2 (en) * 2003-05-02 2004-11-18 Tosoh Smd, Inc. METHODS FOR MAKING LOW SILICON CONTENT Ni-Si SPUTTERING TARGETS AND TARGETS MADE THEREBY
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
EP1694275A2 (de) * 2003-12-18 2006-08-30 AFG Industries, Inc. Schutzschicht für optische beschichtungen mit verbesserter korrosions- und kratzfestigkeit
FR2881757B1 (fr) * 2005-02-08 2007-03-30 Saint Gobain Procede d'elaboration par projection thermique d'une cible a base de silicium et de zirconium
JP5405106B2 (ja) * 2005-05-12 2014-02-05 エージーシー フラット グラス ノース アメリカ，インコーポレイテッド 低太陽熱利得係数、優れた化学及び機械的特性を有する低放射率コーティング及びその製造方法
US20070084527A1 (en) * 2005-10-19 2007-04-19 Stephane Ferrasse High-strength mechanical and structural components, and methods of making high-strength components
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
WO2008084863A1 (ja) * 2007-01-12 2008-07-17 Nippon Steel Materials Co., Ltd. Mo系スパッタリングターゲット板，および，その製造方法
WO2008134516A2 (en) * 2007-04-27 2008-11-06 Honeywell International Inc. Novel manufacturing design and processing methods and apparatus for sputtering targets
US7901781B2 (en) * 2007-11-23 2011-03-08 Agc Flat Glass North America, Inc. Low emissivity coating with low solar heat gain coefficient, enhanced chemical and mechanical properties and method of making the same
JP5768446B2 (ja) * 2011-03-31 2015-08-26 東ソー株式会社 珪化バリウム多結晶体、その製造方法ならびに珪化バリウムスパッタリングターゲット
JP6768575B2 (ja) * 2017-03-24 2020-10-14 Ｊｘ金属株式会社 タングステンシリサイドターゲット及びその製造方法
KR20230062880A (ko) * 2018-03-30 2023-05-09 제이엑스금속주식회사 텅스텐 실리사이드 타깃 및 그 제조 방법, 그리고 텅스텐 실리사이드막의 제조 방법
CN113970982B (zh) * 2018-07-04 2023-08-01 合肥元顿传感科技有限公司 基于自动加工设备的触控膜加工方法
JP2020203821A (ja) * 2018-11-22 2020-12-24 東ソー株式会社 Ｃｒ−Ｓｉ系焼結体
KR102295783B1 (ko) * 2020-03-25 2021-08-30 동의대학교 산학협력단 저온가압소결을 이용한 고강도 텅스텐 제조방법
JP2021181603A (ja) * 2020-05-20 2021-11-25 三菱マテリアル株式会社 スパッタリングターゲット及びスパッタリングターゲット用板材

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Publication number Priority date Publication date Assignee Title
US4619697A (en) * 1984-08-30 1986-10-28 Mitsubishi Kinzoku Kabushiki Kaisha Sputtering target material and process for producing the same
JPH0791636B2 (ja) * 1987-03-09 1995-10-04 日立金属株式会社 スパツタリングタ−ゲツトおよびその製造方法
JPS63227771A (ja) * 1987-03-16 1988-09-22 Tosoh Corp 高純度チタンシリサイドからなるスパツタリング用タ−ゲツト及びその製造方法
US5294321A (en) * 1988-12-21 1994-03-15 Kabushiki Kaisha Toshiba Sputtering target
EP0374931B1 (de) * 1988-12-21 1994-03-02 Kabushiki Kaisha Toshiba Sputtertarget und Verfahren zu seiner Herstellung
KR940008936B1 (ko) * 1990-02-15 1994-09-28 가부시끼가이샤 도시바 고순도 금속재와 그 성질을 이용한 반도체 장치 및 그 제조방법
US5409517A (en) * 1990-05-15 1995-04-25 Kabushiki Kaisha Toshiba Sputtering target and method of manufacturing the same
US5055246A (en) * 1991-01-22 1991-10-08 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of forming high purity metal silicides targets for sputtering
DE69233201T2 (de) * 1991-01-25 2004-07-01 Kabushiki Kaisha Toshiba, Kawasaki Hochreine leitende Filme und ihre Anwendung in Halbleiteranordnungen

Also Published As

Publication number Publication date
EP0555085A1 (de) 1993-08-11
EP0555085B1 (de) 1997-11-05
US5418071A (en) 1995-05-23
EP0735159A1 (de) 1996-10-02
KR950012811B1 (ko) 1995-10-21
JPH05214523A (ja) 1993-08-24
DE69314973D1 (de) 1997-12-11

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Owner name: KABUSHIKI KAISHA TOSHIBA, TOKYO, JP

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