EP1511879A1 - Herstellung von duktilen intermetallischen sputtertargets - Google Patents
Herstellung von duktilen intermetallischen sputtertargetsInfo
- Publication number
- EP1511879A1 EP1511879A1 EP03757295A EP03757295A EP1511879A1 EP 1511879 A1 EP1511879 A1 EP 1511879A1 EP 03757295 A EP03757295 A EP 03757295A EP 03757295 A EP03757295 A EP 03757295A EP 1511879 A1 EP1511879 A1 EP 1511879A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- target
- alloy
- intermetallic
- powders
- target contains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/16—Both compacting and sintering in successive or repeated steps
- B22F3/162—Machining, working after consolidation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/16—Both compacting and sintering in successive or repeated steps
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
Definitions
- the invention is directed to a method of fabricating ductile intermetallic sputtering targets. by elemental blending and hot isostatic pressing.
- a typical sputtering system includes a plasma source for : generating an electron or ion beam, a target that comprises a material to be atomized and a substrate onto which the sputtered material is deposited.
- the process basically involves bombarding the target material with an electron or ion beam at an angle that causes the target material to be sputtered or eroded off the target.
- the sputtered target material is deposited as a thin film or layer on the substrate.
- the target materials for use in sputtering processes have developed from pure metals to ever more complicated alloys.
- the use of complex 3 to 6 element compounds and extremely brittle intermetallic alloys such NiAl, NiAl, RuAl, CoAl, TiAl and NiNb are common in the sputtering industry. Alloying additions such as Cr, B, Zr, Ta, Hf, Pt, SiO 2 , Ti 2 O 3 , and so on are frequently added to B2 (i.e. NiAl, CoAl, RuAl, ..) and other intermetallic alloys to modify characteristics such as deposited film grain-size or surface energy.
- intermetallic alloys are intrinsically hard and brittle, and some of them are less thermal conductive than metals. Therefore, these intermetallic alloys, once consolidated into solid forms pose daunting challenges associated with machinability into targets and service ductility during cathodic sputtering. These materials typically exhibit very limited mechanical shock resistance during machining and thermal shock resistance during sputtering.
- the present invention relates to a novel method of fabricating sputtering targets that have an intermetallic stoichiometry, that renders them ductile enough for machining and sputtering.
- the process employs elemental blending of the prescribed species that constitute the intermetallic alloy and low-temperature hot isostatic press (HIP) consolidation at high pressure to prevent and control the formation of the intermetallic phases in the target material.
- HIP hot isostatic press
- the fact that the target does not contain the nominal intermetallic phase is not an issue in the application since cathodic sputtering is an atom-by-atom deposition process where the different atomic species recombine on the substrate to form the equilibrium and desired intermetallic phase.
- Another object of the present invention is to reduce the cost of.
- FIG. 1 is a process flow chart of the invention described herein.
- FIG. 2a to 2h show the microstructures of some of the alloys represented in the Table.
- FIG. 1 shows the process flow scheme for making the targets of the invention.
- the first step is the selection of raw material powders like Al, Ti, Ru, Ni, Nb, etc. at 10. It must be pointed out here that at least one of the powders involved must be a very fine powder such as -400 mesh because of densification requirements.
- Al powder has an average particle size of 30 microns in all X-Al-Y, where X can be represented by elements such as Ru, Ti, Co and Ni, and Y can be represented by elements such as Cr, B, Zr, Ta, Hf, Pt, SiO 2 , Ti 2 O 3 .
- the specific alloy compositions are those typically associated with crystal structures such as B2, Ll 2 , DO19, Ll 0 , etc.
- Blending at 20 is also critical for the whole process because the homogeneity of final products depends on this step. In practice, various blending methods can be employed to reach required homogeneity, such as V-blending, Turbular blending, ball mill blending and/or attritor mill blending (wet or dry), all of which are well known in the art. [11] The blended powder is then compacted if necessary at 30 and then subjected to canning at 40 prior to HIP pressing.
- step 40 following the blending process the powders are canned prior to HIP processing.
- a container is filled with the powder, evacuated under heat to ensure the removal of any moisture or trapped gasses present, and then sealed.
- the geometry of the container is not limited in any manner, the container can posses a near-net shape geometry with respect to the final material configuration.
- low-temperature/high-pressure hot isostatic pressing (HIP) at 50 is a requisite part of the process.
- the low temperature mitigates the formation of embrittling intermetallic reaction zones between the elemental particles and high pressure ensures complete densification of the powder composite.
- a temperature in the range of 200 to 1000 °C and pressure in the range of 5 ksi to 60 ksi are employed for isostatic pressing.
- the holding time at the designated temperature and pressure ranges from 0.5 to 12 hours.
- the solid billet can be machined at 60 to final desired dimensions using a variety of techniques including wire EDM, saw, waterjet, lathe, grinder, etc. an of which are well known in the art. It is noteworthy that other powder consolidation techniques such as hot pressing and cold pressing can also be employed independently or in conjunction with HIP processing, depending on desired results.
- the product is cleaned and subjected to a final inspection at 70.
- Figures 2a-2b depict the Al-Ni-B alloy as an overview and in detail
- Figures 2c-2d depict the Ni-Nb alloy in an overview and in detail
- Figures 2e-2f depict the Ru-Al alloy in an overview and in detail
- Figure 2g depicts the microstructure of the Co-Al alloy
- Figure 2h depicts the microstructure of the Ti-Al alloy.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38643302P | 2002-06-07 | 2002-06-07 | |
US386433P | 2002-06-07 | ||
PCT/US2003/016827 WO2003104522A1 (en) | 2002-06-07 | 2003-05-29 | Fabrication of ductile intermetallic sputtering targets |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1511879A1 true EP1511879A1 (de) | 2005-03-09 |
Family
ID=29736164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03757295A Withdrawn EP1511879A1 (de) | 2002-06-07 | 2003-05-29 | Herstellung von duktilen intermetallischen sputtertargets |
Country Status (7)
Country | Link |
---|---|
US (1) | US20040062675A1 (de) |
EP (1) | EP1511879A1 (de) |
JP (1) | JP2005529239A (de) |
CN (1) | CN1685078A (de) |
AU (1) | AU2003243332A1 (de) |
TW (1) | TWI278524B (de) |
WO (1) | WO2003104522A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070189916A1 (en) * | 2002-07-23 | 2007-08-16 | Heraeus Incorporated | Sputtering targets and methods for fabricating sputtering targets having multiple materials |
ES2627415T3 (es) * | 2003-03-28 | 2017-07-28 | Vitro, S.A.B. De C.V. | Sustratos recubiertos con mezclas de materiales de titanio y aluminio |
DE102005049328B4 (de) * | 2005-10-12 | 2007-07-26 | W.C. Heraeus Gmbh | Materialmischung, Sputtertarget, Verfahren zu seiner Herstellung sowie Verwendung der Materialmischung |
US20070116592A1 (en) * | 2005-11-22 | 2007-05-24 | Paul Tylus | Fabrication of Ruthenium and Ruthenium Alloy Sputtering Targets with Low Oxygen Content |
US20080170959A1 (en) * | 2007-01-11 | 2008-07-17 | Heraeus Incorporated | Full density Co-W magnetic sputter targets |
JP2010095770A (ja) * | 2008-10-17 | 2010-04-30 | Hitachi Metals Ltd | Ti−Al系合金ターゲット及びその製造方法 |
CN102343437B (zh) * | 2011-11-11 | 2014-03-26 | 宁波江丰电子材料有限公司 | 钨靶材的制作方法 |
CN103014633B (zh) * | 2012-12-12 | 2015-08-05 | 何霞文 | 一种带有复合陶瓷膜的金属工件的制备工艺 |
KR101414352B1 (ko) | 2013-05-27 | 2014-07-02 | 한국생산기술연구원 | 금속재 브레이징용 페이스트 대체 코팅 및 그에 따른 금속재 접합 방법 |
CN104419846B (zh) * | 2013-09-11 | 2017-09-12 | 安泰科技股份有限公司 | 钛铝锆合金靶材及其制备方法 |
JPWO2016052371A1 (ja) * | 2014-09-30 | 2017-06-08 | Jx金属株式会社 | スパッタリングターゲット用母合金及びスパッタリングターゲットの製造方法 |
CN111136265B (zh) * | 2020-03-07 | 2022-02-18 | 北京安泰六九新材料科技有限公司 | 一种钛硅合金靶材及其制造方法 |
CN111299613A (zh) * | 2020-03-27 | 2020-06-19 | 宁波江丰电子材料股份有限公司 | 一种钛铝合金靶材的机加工方法及其产品和用途 |
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US4135286A (en) * | 1977-12-22 | 1979-01-23 | United Technologies Corporation | Sputtering target fabrication method |
US4460541A (en) * | 1980-01-16 | 1984-07-17 | Reynolds Metals Company | Aluminum powder metallurgy |
US4500364A (en) * | 1982-04-23 | 1985-02-19 | Exxon Research & Engineering Co. | Method of forming a protective aluminum-silicon coating composition for metal substrates |
EP0183016B1 (de) * | 1984-10-03 | 1989-09-20 | Sumitomo Electric Industries Limited | Werkstoff für Halbleiteranordung und Verfahren zu seiner Herstellung |
AT388752B (de) * | 1986-04-30 | 1989-08-25 | Plansee Metallwerk | Verfahren zur herstellung eines targets fuer die kathodenzerstaeubung |
JPS63274763A (ja) * | 1987-04-30 | 1988-11-11 | Sumitomo Metal Mining Co Ltd | 光磁気記録用合金タ−ゲツト |
US5094288A (en) * | 1990-11-21 | 1992-03-10 | Silicon Casting, Inc. | Method of making an essentially void-free, cast silicon and aluminum product |
JPH0539566A (ja) * | 1991-02-19 | 1993-02-19 | Mitsubishi Materials Corp | スパツタリング用ターゲツト及びその製造方法 |
JPH0625782A (ja) * | 1991-04-12 | 1994-02-01 | Hitachi Ltd | 高延性アルミニウム焼結合金とその製造法及びその用途 |
US5417827A (en) * | 1991-11-29 | 1995-05-23 | Ppg Industries, Inc. | Cathode targets of silicon and transition metal |
JPH05214523A (ja) * | 1992-02-05 | 1993-08-24 | Toshiba Corp | スパッタリングターゲットおよびその製造方法 |
US5342571A (en) * | 1992-02-19 | 1994-08-30 | Tosoh Smd, Inc. | Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets |
US5427736A (en) * | 1994-04-05 | 1995-06-27 | General Electric Company | Method of making metal alloy foils |
US5836506A (en) * | 1995-04-21 | 1998-11-17 | Sony Corporation | Sputter target/backing plate assembly and method of making same |
US5863398A (en) * | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
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US5963778A (en) * | 1997-02-13 | 1999-10-05 | Tosoh Smd, Inc. | Method for producing near net shape planar sputtering targets and an intermediate therefor |
DE69808664T2 (de) * | 1997-07-15 | 2003-07-24 | Tosoh Smd Inc | Feuerfeste metall-silizid-legierung sputter-targets, dessen verwendung und herstellung |
JP2989169B2 (ja) * | 1997-08-08 | 1999-12-13 | 日立金属株式会社 | Ni−Al系金属間化合物ターゲットおよびその製造方法ならびに磁気記録媒体 |
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US6797137B2 (en) * | 2001-04-11 | 2004-09-28 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
DE10140589A1 (de) * | 2001-08-18 | 2003-02-27 | Heraeus Gmbh W C | Sputtertarget aus einer Siliziumlegierung und Verfahren zur Herstellung eines Sputtertargets |
JP2003089864A (ja) * | 2001-09-18 | 2003-03-28 | Mitsui Mining & Smelting Co Ltd | アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材 |
-
2003
- 2003-05-29 AU AU2003243332A patent/AU2003243332A1/en not_active Abandoned
- 2003-05-29 CN CNA038132117A patent/CN1685078A/zh active Pending
- 2003-05-29 WO PCT/US2003/016827 patent/WO2003104522A1/en active Application Filing
- 2003-05-29 EP EP03757295A patent/EP1511879A1/de not_active Withdrawn
- 2003-05-29 JP JP2004511577A patent/JP2005529239A/ja active Pending
- 2003-06-02 US US10/449,686 patent/US20040062675A1/en not_active Abandoned
- 2003-06-06 TW TW092115426A patent/TWI278524B/zh not_active IP Right Cessation
Non-Patent Citations (1)
Title |
---|
See references of WO03104522A1 * |
Also Published As
Publication number | Publication date |
---|---|
TW200404908A (en) | 2004-04-01 |
TWI278524B (en) | 2007-04-11 |
AU2003243332A1 (en) | 2003-12-22 |
CN1685078A (zh) | 2005-10-19 |
JP2005529239A (ja) | 2005-09-29 |
US20040062675A1 (en) | 2004-04-01 |
WO2003104522A1 (en) | 2003-12-18 |
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