EP1511879A1 - Herstellung von duktilen intermetallischen sputtertargets - Google Patents

Herstellung von duktilen intermetallischen sputtertargets

Info

Publication number
EP1511879A1
EP1511879A1 EP03757295A EP03757295A EP1511879A1 EP 1511879 A1 EP1511879 A1 EP 1511879A1 EP 03757295 A EP03757295 A EP 03757295A EP 03757295 A EP03757295 A EP 03757295A EP 1511879 A1 EP1511879 A1 EP 1511879A1
Authority
EP
European Patent Office
Prior art keywords
target
alloy
intermetallic
powders
target contains
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03757295A
Other languages
English (en)
French (fr)
Inventor
Michael Sandlin
Bernd Kunkel
Willy Zhang
Philip Corno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Inc
Original Assignee
Heraeus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Inc filed Critical Heraeus Inc
Publication of EP1511879A1 publication Critical patent/EP1511879A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12Both compacting and sintering
    • B22F3/16Both compacting and sintering in successive or repeated steps
    • B22F3/162Machining, working after consolidation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12Both compacting and sintering
    • B22F3/16Both compacting and sintering in successive or repeated steps
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/047Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00Supplementary information concerning processes or compositions relating to powder metallurgy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10Processes characterised by the sequence of their steps

Definitions

  • the invention is directed to a method of fabricating ductile intermetallic sputtering targets. by elemental blending and hot isostatic pressing.
  • a typical sputtering system includes a plasma source for : generating an electron or ion beam, a target that comprises a material to be atomized and a substrate onto which the sputtered material is deposited.
  • the process basically involves bombarding the target material with an electron or ion beam at an angle that causes the target material to be sputtered or eroded off the target.
  • the sputtered target material is deposited as a thin film or layer on the substrate.
  • the target materials for use in sputtering processes have developed from pure metals to ever more complicated alloys.
  • the use of complex 3 to 6 element compounds and extremely brittle intermetallic alloys such NiAl, NiAl, RuAl, CoAl, TiAl and NiNb are common in the sputtering industry. Alloying additions such as Cr, B, Zr, Ta, Hf, Pt, SiO 2 , Ti 2 O 3 , and so on are frequently added to B2 (i.e. NiAl, CoAl, RuAl, ..) and other intermetallic alloys to modify characteristics such as deposited film grain-size or surface energy.
  • intermetallic alloys are intrinsically hard and brittle, and some of them are less thermal conductive than metals. Therefore, these intermetallic alloys, once consolidated into solid forms pose daunting challenges associated with machinability into targets and service ductility during cathodic sputtering. These materials typically exhibit very limited mechanical shock resistance during machining and thermal shock resistance during sputtering.
  • the present invention relates to a novel method of fabricating sputtering targets that have an intermetallic stoichiometry, that renders them ductile enough for machining and sputtering.
  • the process employs elemental blending of the prescribed species that constitute the intermetallic alloy and low-temperature hot isostatic press (HIP) consolidation at high pressure to prevent and control the formation of the intermetallic phases in the target material.
  • HIP hot isostatic press
  • the fact that the target does not contain the nominal intermetallic phase is not an issue in the application since cathodic sputtering is an atom-by-atom deposition process where the different atomic species recombine on the substrate to form the equilibrium and desired intermetallic phase.
  • Another object of the present invention is to reduce the cost of.
  • FIG. 1 is a process flow chart of the invention described herein.
  • FIG. 2a to 2h show the microstructures of some of the alloys represented in the Table.
  • FIG. 1 shows the process flow scheme for making the targets of the invention.
  • the first step is the selection of raw material powders like Al, Ti, Ru, Ni, Nb, etc. at 10. It must be pointed out here that at least one of the powders involved must be a very fine powder such as -400 mesh because of densification requirements.
  • Al powder has an average particle size of 30 microns in all X-Al-Y, where X can be represented by elements such as Ru, Ti, Co and Ni, and Y can be represented by elements such as Cr, B, Zr, Ta, Hf, Pt, SiO 2 , Ti 2 O 3 .
  • the specific alloy compositions are those typically associated with crystal structures such as B2, Ll 2 , DO19, Ll 0 , etc.
  • Blending at 20 is also critical for the whole process because the homogeneity of final products depends on this step. In practice, various blending methods can be employed to reach required homogeneity, such as V-blending, Turbular blending, ball mill blending and/or attritor mill blending (wet or dry), all of which are well known in the art. [11] The blended powder is then compacted if necessary at 30 and then subjected to canning at 40 prior to HIP pressing.
  • step 40 following the blending process the powders are canned prior to HIP processing.
  • a container is filled with the powder, evacuated under heat to ensure the removal of any moisture or trapped gasses present, and then sealed.
  • the geometry of the container is not limited in any manner, the container can posses a near-net shape geometry with respect to the final material configuration.
  • low-temperature/high-pressure hot isostatic pressing (HIP) at 50 is a requisite part of the process.
  • the low temperature mitigates the formation of embrittling intermetallic reaction zones between the elemental particles and high pressure ensures complete densification of the powder composite.
  • a temperature in the range of 200 to 1000 °C and pressure in the range of 5 ksi to 60 ksi are employed for isostatic pressing.
  • the holding time at the designated temperature and pressure ranges from 0.5 to 12 hours.
  • the solid billet can be machined at 60 to final desired dimensions using a variety of techniques including wire EDM, saw, waterjet, lathe, grinder, etc. an of which are well known in the art. It is noteworthy that other powder consolidation techniques such as hot pressing and cold pressing can also be employed independently or in conjunction with HIP processing, depending on desired results.
  • the product is cleaned and subjected to a final inspection at 70.
  • Figures 2a-2b depict the Al-Ni-B alloy as an overview and in detail
  • Figures 2c-2d depict the Ni-Nb alloy in an overview and in detail
  • Figures 2e-2f depict the Ru-Al alloy in an overview and in detail
  • Figure 2g depicts the microstructure of the Co-Al alloy
  • Figure 2h depicts the microstructure of the Ti-Al alloy.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
EP03757295A 2002-06-07 2003-05-29 Herstellung von duktilen intermetallischen sputtertargets Withdrawn EP1511879A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38643302P 2002-06-07 2002-06-07
US386433P 2002-06-07
PCT/US2003/016827 WO2003104522A1 (en) 2002-06-07 2003-05-29 Fabrication of ductile intermetallic sputtering targets

Publications (1)

Publication Number Publication Date
EP1511879A1 true EP1511879A1 (de) 2005-03-09

Family

ID=29736164

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03757295A Withdrawn EP1511879A1 (de) 2002-06-07 2003-05-29 Herstellung von duktilen intermetallischen sputtertargets

Country Status (7)

Country Link
US (1) US20040062675A1 (de)
EP (1) EP1511879A1 (de)
JP (1) JP2005529239A (de)
CN (1) CN1685078A (de)
AU (1) AU2003243332A1 (de)
TW (1) TWI278524B (de)
WO (1) WO2003104522A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070189916A1 (en) * 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
ES2627415T3 (es) * 2003-03-28 2017-07-28 Vitro, S.A.B. De C.V. Sustratos recubiertos con mezclas de materiales de titanio y aluminio
DE102005049328B4 (de) * 2005-10-12 2007-07-26 W.C. Heraeus Gmbh Materialmischung, Sputtertarget, Verfahren zu seiner Herstellung sowie Verwendung der Materialmischung
US20070116592A1 (en) * 2005-11-22 2007-05-24 Paul Tylus Fabrication of Ruthenium and Ruthenium Alloy Sputtering Targets with Low Oxygen Content
US20080170959A1 (en) * 2007-01-11 2008-07-17 Heraeus Incorporated Full density Co-W magnetic sputter targets
JP2010095770A (ja) * 2008-10-17 2010-04-30 Hitachi Metals Ltd Ti−Al系合金ターゲット及びその製造方法
CN102343437B (zh) * 2011-11-11 2014-03-26 宁波江丰电子材料有限公司 钨靶材的制作方法
CN103014633B (zh) * 2012-12-12 2015-08-05 何霞文 一种带有复合陶瓷膜的金属工件的制备工艺
KR101414352B1 (ko) 2013-05-27 2014-07-02 한국생산기술연구원 금속재 브레이징용 페이스트 대체 코팅 및 그에 따른 금속재 접합 방법
CN104419846B (zh) * 2013-09-11 2017-09-12 安泰科技股份有限公司 钛铝锆合金靶材及其制备方法
JPWO2016052371A1 (ja) * 2014-09-30 2017-06-08 Jx金属株式会社 スパッタリングターゲット用母合金及びスパッタリングターゲットの製造方法
CN111136265B (zh) * 2020-03-07 2022-02-18 北京安泰六九新材料科技有限公司 一种钛硅合金靶材及其制造方法
CN111299613A (zh) * 2020-03-27 2020-06-19 宁波江丰电子材料股份有限公司 一种钛铝合金靶材的机加工方法及其产品和用途

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4135286A (en) * 1977-12-22 1979-01-23 United Technologies Corporation Sputtering target fabrication method
US4460541A (en) * 1980-01-16 1984-07-17 Reynolds Metals Company Aluminum powder metallurgy
US4500364A (en) * 1982-04-23 1985-02-19 Exxon Research & Engineering Co. Method of forming a protective aluminum-silicon coating composition for metal substrates
EP0183016B1 (de) * 1984-10-03 1989-09-20 Sumitomo Electric Industries Limited Werkstoff für Halbleiteranordung und Verfahren zu seiner Herstellung
AT388752B (de) * 1986-04-30 1989-08-25 Plansee Metallwerk Verfahren zur herstellung eines targets fuer die kathodenzerstaeubung
JPS63274763A (ja) * 1987-04-30 1988-11-11 Sumitomo Metal Mining Co Ltd 光磁気記録用合金タ−ゲツト
US5094288A (en) * 1990-11-21 1992-03-10 Silicon Casting, Inc. Method of making an essentially void-free, cast silicon and aluminum product
JPH0539566A (ja) * 1991-02-19 1993-02-19 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法
JPH0625782A (ja) * 1991-04-12 1994-02-01 Hitachi Ltd 高延性アルミニウム焼結合金とその製造法及びその用途
US5417827A (en) * 1991-11-29 1995-05-23 Ppg Industries, Inc. Cathode targets of silicon and transition metal
JPH05214523A (ja) * 1992-02-05 1993-08-24 Toshiba Corp スパッタリングターゲットおよびその製造方法
US5342571A (en) * 1992-02-19 1994-08-30 Tosoh Smd, Inc. Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets
US5427736A (en) * 1994-04-05 1995-06-27 General Electric Company Method of making metal alloy foils
US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same
US5863398A (en) * 1996-10-11 1999-01-26 Johnson Matthey Electonics, Inc. Hot pressed and sintered sputtering target assemblies and method for making same
US5766380A (en) * 1996-11-05 1998-06-16 Sony Corporation Method for fabricating randomly oriented aluminum alloy sputtering targets with fine grains and fine precipitates
US5963778A (en) * 1997-02-13 1999-10-05 Tosoh Smd, Inc. Method for producing near net shape planar sputtering targets and an intermediate therefor
DE69808664T2 (de) * 1997-07-15 2003-07-24 Tosoh Smd Inc Feuerfeste metall-silizid-legierung sputter-targets, dessen verwendung und herstellung
JP2989169B2 (ja) * 1997-08-08 1999-12-13 日立金属株式会社 Ni−Al系金属間化合物ターゲットおよびその製造方法ならびに磁気記録媒体
US6010583A (en) * 1997-09-09 2000-01-04 Sony Corporation Method of making unreacted metal/aluminum sputter target
US6581669B2 (en) * 1998-03-10 2003-06-24 W.C. Heraeus Gmbh & Co., Kg Sputtering target for depositing silicon layers in their nitride or oxide form and a process for its preparation
CA2265098A1 (en) * 1998-03-12 1999-09-12 Abdelouahab Ziani Method for producing aluminum alloy powder compacts
US6332906B1 (en) * 1998-03-24 2001-12-25 California Consolidated Technology, Inc. Aluminum-silicon alloy formed from a metal powder
US20020014406A1 (en) * 1998-05-21 2002-02-07 Hiroshi Takashima Aluminum target material for sputtering and method for producing same
US6183686B1 (en) * 1998-08-04 2001-02-06 Tosoh Smd, Inc. Sputter target assembly having a metal-matrix-composite backing plate and methods of making same
US6153313A (en) * 1998-10-06 2000-11-28 General Electric Company Nickel aluminide coating and coating systems formed therewith
WO2000038862A1 (en) * 1998-12-28 2000-07-06 Ultraclad Corporation Method of producing a silicom/aluminum sputtering target
US6165413A (en) * 1999-07-08 2000-12-26 Praxair S.T. Technology, Inc. Method of making high density sputtering targets
US6042777A (en) * 1999-08-03 2000-03-28 Sony Corporation Manufacturing of high density intermetallic sputter targets
US6475263B1 (en) * 2001-04-11 2002-11-05 Crucible Materials Corp. Silicon aluminum alloy of prealloyed powder and method of manufacture
US6797137B2 (en) * 2001-04-11 2004-09-28 Heraeus, Inc. Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal
DE10140589A1 (de) * 2001-08-18 2003-02-27 Heraeus Gmbh W C Sputtertarget aus einer Siliziumlegierung und Verfahren zur Herstellung eines Sputtertargets
JP2003089864A (ja) * 2001-09-18 2003-03-28 Mitsui Mining & Smelting Co Ltd アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO03104522A1 *

Also Published As

Publication number Publication date
TW200404908A (en) 2004-04-01
TWI278524B (en) 2007-04-11
AU2003243332A1 (en) 2003-12-22
CN1685078A (zh) 2005-10-19
JP2005529239A (ja) 2005-09-29
US20040062675A1 (en) 2004-04-01
WO2003104522A1 (en) 2003-12-18

Similar Documents

Publication Publication Date Title
USRE40100E1 (en) Fabrication of B/C/N/O/Si doped sputtering targets
US7229588B2 (en) Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidified alloy powders and elemental Pt metal
US6042777A (en) Manufacturing of high density intermetallic sputter targets
KR101370189B1 (ko) 몰리브덴 티타늄 스퍼터링 플레이트 및 타겟의 제조 방법
US20070189916A1 (en) Sputtering targets and methods for fabricating sputtering targets having multiple materials
US20040062675A1 (en) Fabrication of ductile intermetallic sputtering targets
WO2006001976A2 (en) High purity target manufacturing methods
EP3124647B1 (de) Sputtertarget mit al-te-cu-zr-legierung und verfahren zur herstellung davon
US20100140084A1 (en) Method for production of aluminum containing targets
JP2016069700A (ja) Ti−Al合金スパッタリングターゲット
WO2021241522A1 (ja) 金属-Si系粉末、その製造方法、並びに金属-Si系焼結体、スパッタリングターゲット及び金属-Si系薄膜の製造方法
EP3170916B1 (de) Sputtertarget mit al-te-cu-zr-legierung und verfahren zur herstellung davon
JPH02170969A (ja) ターゲット材の製造方法

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20041206

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

RIN1 Information on inventor provided before grant (corrected)

Inventor name: ZHANG, WENJUN

Inventor name: KUNKEL, BERND

Inventor name: SANDLIN, MICHAEL

RIN1 Information on inventor provided before grant (corrected)

Inventor name: ZHANG, WENJUN

Inventor name: KUNKEL, BERND

Inventor name: SANDLIN, MICHAEL

REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1071776

Country of ref document: HK

DAX Request for extension of the european patent (deleted)
RIN1 Information on inventor provided before grant (corrected)

Inventor name: ZHANG, WENJUN

Inventor name: KUNKEL, BERND

Inventor name: SANDLIN, MICHAEL

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20091201

REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1071776

Country of ref document: HK