EP1511879A1 - Fabrication of ductile intermetallic sputtering targets - Google Patents

Fabrication of ductile intermetallic sputtering targets

Info

Publication number
EP1511879A1
EP1511879A1 EP03757295A EP03757295A EP1511879A1 EP 1511879 A1 EP1511879 A1 EP 1511879A1 EP 03757295 A EP03757295 A EP 03757295A EP 03757295 A EP03757295 A EP 03757295A EP 1511879 A1 EP1511879 A1 EP 1511879A1
Authority
EP
European Patent Office
Prior art keywords
target
alloy
intermetallic
powders
target contains
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03757295A
Other languages
German (de)
French (fr)
Inventor
Michael Sandlin
Bernd Kunkel
Willy Zhang
Philip Corno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Inc
Original Assignee
Heraeus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Inc filed Critical Heraeus Inc
Publication of EP1511879A1 publication Critical patent/EP1511879A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/16—Both compacting and sintering in successive or repeated steps
    • B22F3/162—Machining, working after consolidation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/16—Both compacting and sintering in successive or repeated steps
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

Definitions

  • the invention is directed to a method of fabricating ductile intermetallic sputtering targets. by elemental blending and hot isostatic pressing.
  • a typical sputtering system includes a plasma source for : generating an electron or ion beam, a target that comprises a material to be atomized and a substrate onto which the sputtered material is deposited.
  • the process basically involves bombarding the target material with an electron or ion beam at an angle that causes the target material to be sputtered or eroded off the target.
  • the sputtered target material is deposited as a thin film or layer on the substrate.
  • the target materials for use in sputtering processes have developed from pure metals to ever more complicated alloys.
  • the use of complex 3 to 6 element compounds and extremely brittle intermetallic alloys such NiAl, NiAl, RuAl, CoAl, TiAl and NiNb are common in the sputtering industry. Alloying additions such as Cr, B, Zr, Ta, Hf, Pt, SiO 2 , Ti 2 O 3 , and so on are frequently added to B2 (i.e. NiAl, CoAl, RuAl, ..) and other intermetallic alloys to modify characteristics such as deposited film grain-size or surface energy.
  • intermetallic alloys are intrinsically hard and brittle, and some of them are less thermal conductive than metals. Therefore, these intermetallic alloys, once consolidated into solid forms pose daunting challenges associated with machinability into targets and service ductility during cathodic sputtering. These materials typically exhibit very limited mechanical shock resistance during machining and thermal shock resistance during sputtering.
  • the present invention relates to a novel method of fabricating sputtering targets that have an intermetallic stoichiometry, that renders them ductile enough for machining and sputtering.
  • the process employs elemental blending of the prescribed species that constitute the intermetallic alloy and low-temperature hot isostatic press (HIP) consolidation at high pressure to prevent and control the formation of the intermetallic phases in the target material.
  • HIP hot isostatic press
  • the fact that the target does not contain the nominal intermetallic phase is not an issue in the application since cathodic sputtering is an atom-by-atom deposition process where the different atomic species recombine on the substrate to form the equilibrium and desired intermetallic phase.
  • Another object of the present invention is to reduce the cost of.
  • FIG. 1 is a process flow chart of the invention described herein.
  • FIG. 2a to 2h show the microstructures of some of the alloys represented in the Table.
  • FIG. 1 shows the process flow scheme for making the targets of the invention.
  • the first step is the selection of raw material powders like Al, Ti, Ru, Ni, Nb, etc. at 10. It must be pointed out here that at least one of the powders involved must be a very fine powder such as -400 mesh because of densification requirements.
  • Al powder has an average particle size of 30 microns in all X-Al-Y, where X can be represented by elements such as Ru, Ti, Co and Ni, and Y can be represented by elements such as Cr, B, Zr, Ta, Hf, Pt, SiO 2 , Ti 2 O 3 .
  • the specific alloy compositions are those typically associated with crystal structures such as B2, Ll 2 , DO19, Ll 0 , etc.
  • Blending at 20 is also critical for the whole process because the homogeneity of final products depends on this step. In practice, various blending methods can be employed to reach required homogeneity, such as V-blending, Turbular blending, ball mill blending and/or attritor mill blending (wet or dry), all of which are well known in the art. [11] The blended powder is then compacted if necessary at 30 and then subjected to canning at 40 prior to HIP pressing.
  • step 40 following the blending process the powders are canned prior to HIP processing.
  • a container is filled with the powder, evacuated under heat to ensure the removal of any moisture or trapped gasses present, and then sealed.
  • the geometry of the container is not limited in any manner, the container can posses a near-net shape geometry with respect to the final material configuration.
  • low-temperature/high-pressure hot isostatic pressing (HIP) at 50 is a requisite part of the process.
  • the low temperature mitigates the formation of embrittling intermetallic reaction zones between the elemental particles and high pressure ensures complete densification of the powder composite.
  • a temperature in the range of 200 to 1000 °C and pressure in the range of 5 ksi to 60 ksi are employed for isostatic pressing.
  • the holding time at the designated temperature and pressure ranges from 0.5 to 12 hours.
  • the solid billet can be machined at 60 to final desired dimensions using a variety of techniques including wire EDM, saw, waterjet, lathe, grinder, etc. an of which are well known in the art. It is noteworthy that other powder consolidation techniques such as hot pressing and cold pressing can also be employed independently or in conjunction with HIP processing, depending on desired results.
  • the product is cleaned and subjected to a final inspection at 70.
  • Figures 2a-2b depict the Al-Ni-B alloy as an overview and in detail
  • Figures 2c-2d depict the Ni-Nb alloy in an overview and in detail
  • Figures 2e-2f depict the Ru-Al alloy in an overview and in detail
  • Figure 2g depicts the microstructure of the Co-Al alloy
  • Figure 2h depicts the microstructure of the Ti-Al alloy.

Abstract

Sputtering targets are produced which have an intermetallic stoichiometry which makes them ductile enough for maching and sputtering. The targets are produced from elemental or alloy powders or alloys, at least one of which is of very fine particle size, e.g., - 400 mesh. The elemental or alloy powders are blended, canned, subjected to hot isostatic pressing at low temperatures and high pressures, formed into a billet, and machined to form the target.

Description

FABRICATION OF DUCTILE INTERMETALLIC SPUTTERING TARGETS
Field of the Invention
[01] The invention is directed to a method of fabricating ductile intermetallic sputtering targets. by elemental blending and hot isostatic pressing.
Background of the Invention
[02] Cathodic sputtering processes are widely used for the deposition of thin films of material onto desired substrates. A typical sputtering system includes a plasma source for: generating an electron or ion beam, a target that comprises a material to be atomized and a substrate onto which the sputtered material is deposited. The process basically involves bombarding the target material with an electron or ion beam at an angle that causes the target material to be sputtered or eroded off the target. The sputtered target material is deposited as a thin film or layer on the substrate.
[03] The target materials for use in sputtering processes have developed from pure metals to ever more complicated alloys. The use of complex 3 to 6 element compounds and extremely brittle intermetallic alloys such NiAl, NiAl, RuAl, CoAl, TiAl and NiNb are common in the sputtering industry. Alloying additions such as Cr, B, Zr, Ta, Hf, Pt, SiO2, Ti2O3, and so on are frequently added to B2 (i.e. NiAl, CoAl, RuAl, ..) and other intermetallic alloys to modify characteristics such as deposited film grain-size or surface energy.
[04] Most intermetallic alloys are intrinsically hard and brittle, and some of them are less thermal conductive than metals. Therefore, these intermetallic alloys, once consolidated into solid forms pose daunting challenges associated with machinability into targets and service ductility during cathodic sputtering. These materials typically exhibit very limited mechanical shock resistance during machining and thermal shock resistance during sputtering.
Summary of the Invention
[05] The present invention relates to a novel method of fabricating sputtering targets that have an intermetallic stoichiometry, that renders them ductile enough for machining and sputtering. The process employs elemental blending of the prescribed species that constitute the intermetallic alloy and low-temperature hot isostatic press (HIP) consolidation at high pressure to prevent and control the formation of the intermetallic phases in the target material. The fact that the target does not contain the nominal intermetallic phase is not an issue in the application since cathodic sputtering is an atom-by-atom deposition process where the different atomic species recombine on the substrate to form the equilibrium and desired intermetallic phase. Another object of the present invention is to reduce the cost of. target materials because the manufacture of intermetallic powders prior to HIP consolidation is not a required step. Typically, alloy powders are manufactured using sintering or gas atomization processes which tend to have very high associated batch run costs. These and other objectives of this invention will become apparent from the following detailed description.
Brief Description of the Drawings
[06] Reference is now made to the accompanying drawings wherein:
[07] FIG. 1 is a process flow chart of the invention described herein; and
[08] FIG. 2a to 2h show the microstructures of some of the alloys represented in the Table.
Detailed Description of the Invention
[09] FIG. 1 shows the process flow scheme for making the targets of the invention. The first step is the selection of raw material powders like Al, Ti, Ru, Ni, Nb, etc. at 10. It must be pointed out here that at least one of the powders involved must be a very fine powder such as -400 mesh because of densification requirements. For instance, Al powder has an average particle size of 30 microns in all X-Al-Y, where X can be represented by elements such as Ru, Ti, Co and Ni, and Y can be represented by elements such as Cr, B, Zr, Ta, Hf, Pt, SiO2, Ti2O3. The specific alloy compositions are those typically associated with crystal structures such as B2, Ll2, DO19, Ll0, etc. Theoretically, the finer the powder is, the better it is for processing, but ultrafine Al powder is very difficult to handle due to its explosive nature. Therefore Al powder of 30 microns mean particle size is typically selected for all Al containing materials. The same considerations apply to Ni powder in NiNb. [10] Blending at 20 is also critical for the whole process because the homogeneity of final products depends on this step. In practice, various blending methods can be employed to reach required homogeneity, such as V-blending, Turbular blending, ball mill blending and/or attritor mill blending (wet or dry), all of which are well known in the art. [11] The blended powder is then compacted if necessary at 30 and then subjected to canning at 40 prior to HIP pressing.
[12] In step 40 following the blending process, the powders are canned prior to HIP processing. For example, a container is filled with the powder, evacuated under heat to ensure the removal of any moisture or trapped gasses present, and then sealed. Although the geometry of the container is not limited in any manner, the container can posses a near-net shape geometry with respect to the final material configuration.
[13] As mentioned above, low-temperature/high-pressure hot isostatic pressing (HIP) at 50 is a requisite part of the process. The low temperature mitigates the formation of embrittling intermetallic reaction zones between the elemental particles and high pressure ensures complete densification of the powder composite. As described herein, a temperature in the range of 200 to 1000 °C and pressure in the range of 5 ksi to 60 ksi are employed for isostatic pressing. The holding time at the designated temperature and pressure ranges from 0.5 to 12 hours. After HIP consolidation, the solid billet can be machined at 60 to final desired dimensions using a variety of techniques including wire EDM, saw, waterjet, lathe, grinder, etc. an of which are well known in the art. It is noteworthy that other powder consolidation techniques such as hot pressing and cold pressing can also be employed independently or in conjunction with HIP processing, depending on desired results. After machining, the product is cleaned and subjected to a final inspection at 70.
[14] The following table depicts some alloys manufactured using the invention described herein. Figures 2a to 2h depict the microstructures associated with these alloys and demonstrate the minimized intermetallic reaction zones between the individual elemental phases.
[15] Table: Summary of alloys investigated.
In the Table and Figures 2a-2f, Figures 2a-2b depict the Al-Ni-B alloy as an overview and in detail; Figures 2c-2d depict the Ni-Nb alloy in an overview and in detail; Figures 2e-2f depict the Ru-Al alloy in an overview and in detail; Figure 2g depicts the microstructure of the Co-Al alloy, and Figure 2h depicts the microstructure of the Ti-Al alloy.
[16] While this invention has been described with reference to several preferred embodiments, it is contemplated that various alterations and modifications thereof will become apparent to those skilled in the art upon a reading of the detailed description contained herein. It is therefore intended that the following claims are interpreted as including all such alterations and modifications as fall within the true spirit and scope of this invention.

Claims

What is Claimed Is:
1. A method of fabricating ductile sputter targets that have an intermetallic chemistry, the method comprising the steps of selecting raw elemental or alloy powders, blending, canning, hot isostatic pressing at low temperatures and high pressures, forming a billet, and machining the billet to form a target.
2. A method according to claim 1, wherein at least one of the powders or alloys selected has a particle size of at least as small as -400 mesh.
3. A method according the claim 1 wherein the powders are selected so as to form an alloy of the formula X-Al-Y, wherein Al is aluminum, X is Ru, Ti, Co or Ni, and Y is Cr, B, Zr, Ta, Hf, Pt, Si02 , or T103.
4. A method according to claim 3 wherein the resulting alloy will have a crystal structure selected from the group consisting of B2, Ll2, DO, 19 or Ll0
5. A method according to claim 1, wherein the All powder has a mean particle size of about 30 microns.
6. A method according to claim 1, wherein the parameters of hot isostatic pressing comprise a temperature of 200 to 1000°C, a pressure of 5 to 60 ksi, and a time period of 0.5 to 12 hours.
7. A method according to claim 1 , wherein the target contains RuAl.
8. A method according to claim 1 , wherein the target contains CoAl.
9. A method according to claim 1 , wherein the target contains TiAl.
10. A method according to claim 1, wherein the target contains Al-30at%Ni- 10at%Cr.
11. A method according to claim 1 , wherein the target contains NiAl and/or NiNb.
EP03757295A 2002-06-07 2003-05-29 Fabrication of ductile intermetallic sputtering targets Withdrawn EP1511879A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38643302P 2002-06-07 2002-06-07
US386433P 2002-06-07
PCT/US2003/016827 WO2003104522A1 (en) 2002-06-07 2003-05-29 Fabrication of ductile intermetallic sputtering targets

Publications (1)

Publication Number Publication Date
EP1511879A1 true EP1511879A1 (en) 2005-03-09

Family

ID=29736164

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03757295A Withdrawn EP1511879A1 (en) 2002-06-07 2003-05-29 Fabrication of ductile intermetallic sputtering targets

Country Status (7)

Country Link
US (1) US20040062675A1 (en)
EP (1) EP1511879A1 (en)
JP (1) JP2005529239A (en)
CN (1) CN1685078A (en)
AU (1) AU2003243332A1 (en)
TW (1) TWI278524B (en)
WO (1) WO2003104522A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070189916A1 (en) * 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
WO2004087985A2 (en) * 2003-03-28 2004-10-14 Ppg Industries Ohio, Inc. Substrates coated with mixtures of titanium and aluminum materials, methods for making the substrates, and cathode targets of titanium and aluminum metal
DE102005049328B4 (en) * 2005-10-12 2007-07-26 W.C. Heraeus Gmbh Material mixture, sputtering target, process for its preparation and use of the material mixture
WO2007062089A1 (en) * 2005-11-22 2007-05-31 Bodycote Imt, Inc. Fabrication of ruthenium and ruthenium alloy sputtering targets with low oxygen content
US20080170959A1 (en) * 2007-01-11 2008-07-17 Heraeus Incorporated Full density Co-W magnetic sputter targets
JP2010095770A (en) * 2008-10-17 2010-04-30 Hitachi Metals Ltd Ti-Al-BASED ALLOY TARGET AND METHOD FOR PRODUCING THE SAME
CN102343437B (en) * 2011-11-11 2014-03-26 宁波江丰电子材料有限公司 Method for manufacturing tungsten target material
CN103014633B (en) * 2012-12-12 2015-08-05 何霞文 A kind of preparation technology of the metal works with composite ceramic film
KR101414352B1 (en) 2013-05-27 2014-07-02 한국생산기술연구원 Metal coating for replacing brazing paste and method of joining metal thereby
CN104419846B (en) * 2013-09-11 2017-09-12 安泰科技股份有限公司 Mallory sharton alloy target and preparation method thereof
WO2016052371A1 (en) * 2014-09-30 2016-04-07 Ｊｘ金属株式会社 Master alloy for sputtering target and method for manufacturing sputtering target
CN111136265B (en) * 2020-03-07 2022-02-18 北京安泰六九新材料科技有限公司 Titanium-silicon alloy target and manufacturing method thereof
CN111299613A (en) * 2020-03-27 2020-06-19 宁波江丰电子材料股份有限公司 Machining method of titanium-aluminum alloy target material, product and application thereof

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4135286A (en) * 1977-12-22 1979-01-23 United Technologies Corporation Sputtering target fabrication method
US4460541A (en) * 1980-01-16 1984-07-17 Reynolds Metals Company Aluminum powder metallurgy
US4500364A (en) * 1982-04-23 1985-02-19 Exxon Research & Engineering Co. Method of forming a protective aluminum-silicon coating composition for metal substrates
DE3573137D1 (en) * 1984-10-03 1989-10-26 Sumitomo Electric Industries Material for a semiconductor device and process for its manufacture
AT388752B (en) * 1986-04-30 1989-08-25 Plansee Metallwerk METHOD FOR PRODUCING A TARGET FOR CATHODE SPRAYING
JPS63274763A (en) * 1987-04-30 1988-11-11 Sumitomo Metal Mining Co Ltd Alloy target for magneto-optical recording
US5094288A (en) * 1990-11-21 1992-03-10 Silicon Casting, Inc. Method of making an essentially void-free, cast silicon and aluminum product
JPH0539566A (en) * 1991-02-19 1993-02-19 Mitsubishi Materials Corp Sputtering target and its production
JPH0625782A (en) * 1991-04-12 1994-02-01 Hitachi Ltd High ductility aluminum sintered alloy and its manufacture as well as its application
US5417827A (en) * 1991-11-29 1995-05-23 Ppg Industries, Inc. Cathode targets of silicon and transition metal
JPH05214523A (en) * 1992-02-05 1993-08-24 Toshiba Corp Sputtering target and its manufacture
US5342571A (en) * 1992-02-19 1994-08-30 Tosoh Smd, Inc. Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets
US5427736A (en) * 1994-04-05 1995-06-27 General Electric Company Method of making metal alloy foils
US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same
US5863398A (en) * 1996-10-11 1999-01-26 Johnson Matthey Electonics, Inc. Hot pressed and sintered sputtering target assemblies and method for making same
US5766380A (en) * 1996-11-05 1998-06-16 Sony Corporation Method for fabricating randomly oriented aluminum alloy sputtering targets with fine grains and fine precipitates
US5963778A (en) * 1997-02-13 1999-10-05 Tosoh Smd, Inc. Method for producing near net shape planar sputtering targets and an intermediate therefor
EP1028824B1 (en) * 1997-07-15 2002-10-09 Tosoh Smd, Inc. Refractory metal silicide alloy sputter targets, use and manufacture thereof
JP2989169B2 (en) * 1997-08-08 1999-12-13 日立金属株式会社 Ni-Al intermetallic compound target, method for producing the same, and magnetic recording medium
US6010583A (en) * 1997-09-09 2000-01-04 Sony Corporation Method of making unreacted metal/aluminum sputter target
US6581669B2 (en) * 1998-03-10 2003-06-24 W.C. Heraeus Gmbh & Co., Kg Sputtering target for depositing silicon layers in their nitride or oxide form and a process for its preparation
CA2265098A1 (en) * 1998-03-12 1999-09-12 Abdelouahab Ziani Method for producing aluminum alloy powder compacts
US6332906B1 (en) * 1998-03-24 2001-12-25 California Consolidated Technology, Inc. Aluminum-silicon alloy formed from a metal powder
US20020014406A1 (en) * 1998-05-21 2002-02-07 Hiroshi Takashima Aluminum target material for sputtering and method for producing same
US6183686B1 (en) * 1998-08-04 2001-02-06 Tosoh Smd, Inc. Sputter target assembly having a metal-matrix-composite backing plate and methods of making same
US6153313A (en) * 1998-10-06 2000-11-28 General Electric Company Nickel aluminide coating and coating systems formed therewith
WO2000038862A1 (en) * 1998-12-28 2000-07-06 Ultraclad Corporation Method of producing a silicom/aluminum sputtering target
US6165413A (en) * 1999-07-08 2000-12-26 Praxair S.T. Technology, Inc. Method of making high density sputtering targets
US6042777A (en) * 1999-08-03 2000-03-28 Sony Corporation Manufacturing of high density intermetallic sputter targets
US6475263B1 (en) * 2001-04-11 2002-11-05 Crucible Materials Corp. Silicon aluminum alloy of prealloyed powder and method of manufacture
US6797137B2 (en) * 2001-04-11 2004-09-28 Heraeus, Inc. Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal
DE10140589A1 (en) * 2001-08-18 2003-02-27 Heraeus Gmbh W C Sputtering target made of a silicon alloy and method for producing a sputtering target
JP2003089864A (en) * 2001-09-18 2003-03-28 Mitsui Mining & Smelting Co Ltd Aluminum alloy thin film, wiring circuit having the same thin film, and target material depositing the thin film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO03104522A1 *

Also Published As

Publication number Publication date
US20040062675A1 (en) 2004-04-01
TW200404908A (en) 2004-04-01
JP2005529239A (en) 2005-09-29
CN1685078A (en) 2005-10-19
AU2003243332A1 (en) 2003-12-22
WO2003104522A1 (en) 2003-12-18
TWI278524B (en) 2007-04-11

Similar Documents

Publication Publication Date Title
USRE40100E1 (en) Fabrication of B/C/N/O/Si doped sputtering targets
US7229588B2 (en) Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidified alloy powders and elemental Pt metal
US6042777A (en) Manufacturing of high density intermetallic sputter targets
KR101370189B1 (en) Methods of making molybdenum titanium sputtering plates and targets
US20070189916A1 (en) Sputtering targets and methods for fabricating sputtering targets having multiple materials
US20040062675A1 (en) Fabrication of ductile intermetallic sputtering targets
WO2006001976A2 (en) High purity target manufacturing methods
EP3124647B1 (en) Sputtering target comprising al-te-cu-zr alloy, and method for producing same
US20100140084A1 (en) Method for production of aluminum containing targets
JP2016069700A (en) Ti-Al alloy sputtering target
WO2021241522A1 (en) METAL-Si BASED POWDER, METHOD FOR PRODUCING SAME, METAL-Si BASED SINTERED BODY, SPUTTERING TARGET, AND METAL-Si BASED THIN FILM MANUFACTURING METHOD
EP3170916B1 (en) Sputterring target comprising al-te-cu-zr-based alloy and method of manufacturing the same
JPH02170969A (en) Manufacture of target material

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20041206

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

RIN1 Information on inventor provided before grant (corrected)

Inventor name: ZHANG, WENJUN

Inventor name: KUNKEL, BERND

Inventor name: SANDLIN, MICHAEL

RIN1 Information on inventor provided before grant (corrected)

Inventor name: ZHANG, WENJUN

Inventor name: KUNKEL, BERND

Inventor name: SANDLIN, MICHAEL

REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1071776

Country of ref document: HK

DAX Request for extension of the european patent (deleted)
RIN1 Information on inventor provided before grant (corrected)

Inventor name: ZHANG, WENJUN

Inventor name: KUNKEL, BERND

Inventor name: SANDLIN, MICHAEL

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20091201

REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1071776

Country of ref document: HK