WO2003104522A1 - Fabrication of ductile intermetallic sputtering targets - Google Patents
Fabrication of ductile intermetallic sputtering targets Download PDFInfo
- Publication number
- WO2003104522A1 WO2003104522A1 PCT/US2003/016827 US0316827W WO03104522A1 WO 2003104522 A1 WO2003104522 A1 WO 2003104522A1 US 0316827 W US0316827 W US 0316827W WO 03104522 A1 WO03104522 A1 WO 03104522A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- target
- alloy
- intermetallic
- powders
- target contains
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/16—Both compacting and sintering in successive or repeated steps
- B22F3/162—Machining, working after consolidation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/16—Both compacting and sintering in successive or repeated steps
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
Definitions
- the invention is directed to a method of fabricating ductile intermetallic sputtering targets. by elemental blending and hot isostatic pressing.
- a typical sputtering system includes a plasma source for : generating an electron or ion beam, a target that comprises a material to be atomized and a substrate onto which the sputtered material is deposited.
- the process basically involves bombarding the target material with an electron or ion beam at an angle that causes the target material to be sputtered or eroded off the target.
- the sputtered target material is deposited as a thin film or layer on the substrate.
- the target materials for use in sputtering processes have developed from pure metals to ever more complicated alloys.
- the use of complex 3 to 6 element compounds and extremely brittle intermetallic alloys such NiAl, NiAl, RuAl, CoAl, TiAl and NiNb are common in the sputtering industry. Alloying additions such as Cr, B, Zr, Ta, Hf, Pt, SiO 2 , Ti 2 O 3 , and so on are frequently added to B2 (i.e. NiAl, CoAl, RuAl, ..) and other intermetallic alloys to modify characteristics such as deposited film grain-size or surface energy.
- intermetallic alloys are intrinsically hard and brittle, and some of them are less thermal conductive than metals. Therefore, these intermetallic alloys, once consolidated into solid forms pose daunting challenges associated with machinability into targets and service ductility during cathodic sputtering. These materials typically exhibit very limited mechanical shock resistance during machining and thermal shock resistance during sputtering.
- the present invention relates to a novel method of fabricating sputtering targets that have an intermetallic stoichiometry, that renders them ductile enough for machining and sputtering.
- the process employs elemental blending of the prescribed species that constitute the intermetallic alloy and low-temperature hot isostatic press (HIP) consolidation at high pressure to prevent and control the formation of the intermetallic phases in the target material.
- HIP hot isostatic press
- the fact that the target does not contain the nominal intermetallic phase is not an issue in the application since cathodic sputtering is an atom-by-atom deposition process where the different atomic species recombine on the substrate to form the equilibrium and desired intermetallic phase.
- Another object of the present invention is to reduce the cost of.
- FIG. 1 is a process flow chart of the invention described herein.
- FIG. 2a to 2h show the microstructures of some of the alloys represented in the Table.
- FIG. 1 shows the process flow scheme for making the targets of the invention.
- the first step is the selection of raw material powders like Al, Ti, Ru, Ni, Nb, etc. at 10. It must be pointed out here that at least one of the powders involved must be a very fine powder such as -400 mesh because of densification requirements.
- Al powder has an average particle size of 30 microns in all X-Al-Y, where X can be represented by elements such as Ru, Ti, Co and Ni, and Y can be represented by elements such as Cr, B, Zr, Ta, Hf, Pt, SiO 2 , Ti 2 O 3 .
- the specific alloy compositions are those typically associated with crystal structures such as B2, Ll 2 , DO19, Ll 0 , etc.
- Blending at 20 is also critical for the whole process because the homogeneity of final products depends on this step. In practice, various blending methods can be employed to reach required homogeneity, such as V-blending, Turbular blending, ball mill blending and/or attritor mill blending (wet or dry), all of which are well known in the art. [11] The blended powder is then compacted if necessary at 30 and then subjected to canning at 40 prior to HIP pressing.
- step 40 following the blending process the powders are canned prior to HIP processing.
- a container is filled with the powder, evacuated under heat to ensure the removal of any moisture or trapped gasses present, and then sealed.
- the geometry of the container is not limited in any manner, the container can posses a near-net shape geometry with respect to the final material configuration.
- low-temperature/high-pressure hot isostatic pressing (HIP) at 50 is a requisite part of the process.
- the low temperature mitigates the formation of embrittling intermetallic reaction zones between the elemental particles and high pressure ensures complete densification of the powder composite.
- a temperature in the range of 200 to 1000 °C and pressure in the range of 5 ksi to 60 ksi are employed for isostatic pressing.
- the holding time at the designated temperature and pressure ranges from 0.5 to 12 hours.
- the solid billet can be machined at 60 to final desired dimensions using a variety of techniques including wire EDM, saw, waterjet, lathe, grinder, etc. an of which are well known in the art. It is noteworthy that other powder consolidation techniques such as hot pressing and cold pressing can also be employed independently or in conjunction with HIP processing, depending on desired results.
- the product is cleaned and subjected to a final inspection at 70.
- Figures 2a-2b depict the Al-Ni-B alloy as an overview and in detail
- Figures 2c-2d depict the Ni-Nb alloy in an overview and in detail
- Figures 2e-2f depict the Ru-Al alloy in an overview and in detail
- Figure 2g depicts the microstructure of the Co-Al alloy
- Figure 2h depicts the microstructure of the Ti-Al alloy.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004511577A JP2005529239A (en) | 2002-06-07 | 2003-05-29 | Process for producing processing-compliant intermetallic compound sputtering target |
AU2003243332A AU2003243332A1 (en) | 2002-06-07 | 2003-05-29 | Fabrication of ductile intermetallic sputtering targets |
EP03757295A EP1511879A1 (en) | 2002-06-07 | 2003-05-29 | Fabrication of ductile intermetallic sputtering targets |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38643302P | 2002-06-07 | 2002-06-07 | |
US60/386,433 | 2002-06-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003104522A1 true WO2003104522A1 (en) | 2003-12-18 |
Family
ID=29736164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/016827 WO2003104522A1 (en) | 2002-06-07 | 2003-05-29 | Fabrication of ductile intermetallic sputtering targets |
Country Status (7)
Country | Link |
---|---|
US (1) | US20040062675A1 (en) |
EP (1) | EP1511879A1 (en) |
JP (1) | JP2005529239A (en) |
CN (1) | CN1685078A (en) |
AU (1) | AU2003243332A1 (en) |
TW (1) | TWI278524B (en) |
WO (1) | WO2003104522A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1950322A1 (en) * | 2007-01-11 | 2008-07-30 | Heraeus, Inc. | Full density Co-W magnetic sputter targets |
CN104419846A (en) * | 2013-09-11 | 2015-03-18 | 安泰科技股份有限公司 | Titanium-aluminum-zirconium alloy target material and preparation method thereof |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070189916A1 (en) * | 2002-07-23 | 2007-08-16 | Heraeus Incorporated | Sputtering targets and methods for fabricating sputtering targets having multiple materials |
MXPA05010170A (en) * | 2003-03-28 | 2005-11-08 | Ppg Ind Ohio Inc | Substrates coated with mixtures of titanium and aluminum materials, methods for making the substrates, and cathode targets of titanium and aluminum metal. |
DE102005049328B4 (en) * | 2005-10-12 | 2007-07-26 | W.C. Heraeus Gmbh | Material mixture, sputtering target, process for its preparation and use of the material mixture |
WO2007062089A1 (en) * | 2005-11-22 | 2007-05-31 | Bodycote Imt, Inc. | Fabrication of ruthenium and ruthenium alloy sputtering targets with low oxygen content |
JP2010095770A (en) * | 2008-10-17 | 2010-04-30 | Hitachi Metals Ltd | Ti-Al-BASED ALLOY TARGET AND METHOD FOR PRODUCING THE SAME |
CN102343437B (en) * | 2011-11-11 | 2014-03-26 | 宁波江丰电子材料有限公司 | Method for manufacturing tungsten target material |
CN103014633B (en) * | 2012-12-12 | 2015-08-05 | 何霞文 | A kind of preparation technology of the metal works with composite ceramic film |
KR101414352B1 (en) | 2013-05-27 | 2014-07-02 | 한국생산기술연구원 | Metal coating for replacing brazing paste and method of joining metal thereby |
US10704137B2 (en) * | 2014-09-30 | 2020-07-07 | Jx Nippon Mining & Metals Corporation | Master alloy for sputtering target and method for producing sputtering target |
CN111136265B (en) * | 2020-03-07 | 2022-02-18 | 北京安泰六九新材料科技有限公司 | Titanium-silicon alloy target and manufacturing method thereof |
CN111299613A (en) * | 2020-03-27 | 2020-06-19 | 宁波江丰电子材料股份有限公司 | Machining method of titanium-aluminum alloy target material, product and application thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6042777A (en) * | 1999-08-03 | 2000-03-28 | Sony Corporation | Manufacturing of high density intermetallic sputter targets |
US6159625A (en) * | 1997-08-08 | 2000-12-12 | Hitachi Metals Ltd. | Target of intermetallic compound with B2-ordered lattice structure, production method thereof and magnetic recording medium having B2-structured underlayer |
US20020014406A1 (en) * | 1998-05-21 | 2002-02-07 | Hiroshi Takashima | Aluminum target material for sputtering and method for producing same |
WO2002083974A1 (en) * | 2001-04-11 | 2002-10-24 | Heraeus, Inc. | Pt-co based sputtering targets |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4135286A (en) * | 1977-12-22 | 1979-01-23 | United Technologies Corporation | Sputtering target fabrication method |
US4460541A (en) * | 1980-01-16 | 1984-07-17 | Reynolds Metals Company | Aluminum powder metallurgy |
US4500364A (en) * | 1982-04-23 | 1985-02-19 | Exxon Research & Engineering Co. | Method of forming a protective aluminum-silicon coating composition for metal substrates |
EP0183016B1 (en) * | 1984-10-03 | 1989-09-20 | Sumitomo Electric Industries Limited | Material for a semiconductor device and process for its manufacture |
AT388752B (en) * | 1986-04-30 | 1989-08-25 | Plansee Metallwerk | METHOD FOR PRODUCING A TARGET FOR CATHODE SPRAYING |
JPS63274763A (en) * | 1987-04-30 | 1988-11-11 | Sumitomo Metal Mining Co Ltd | Alloy target for magneto-optical recording |
US5094288A (en) * | 1990-11-21 | 1992-03-10 | Silicon Casting, Inc. | Method of making an essentially void-free, cast silicon and aluminum product |
JPH0539566A (en) * | 1991-02-19 | 1993-02-19 | Mitsubishi Materials Corp | Sputtering target and its production |
JPH0625782A (en) * | 1991-04-12 | 1994-02-01 | Hitachi Ltd | High ductility aluminum sintered alloy and its manufacture as well as its application |
US5417827A (en) * | 1991-11-29 | 1995-05-23 | Ppg Industries, Inc. | Cathode targets of silicon and transition metal |
JPH05214523A (en) * | 1992-02-05 | 1993-08-24 | Toshiba Corp | Sputtering target and its manufacture |
US5342571A (en) * | 1992-02-19 | 1994-08-30 | Tosoh Smd, Inc. | Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets |
US5427736A (en) * | 1994-04-05 | 1995-06-27 | General Electric Company | Method of making metal alloy foils |
US5836506A (en) * | 1995-04-21 | 1998-11-17 | Sony Corporation | Sputter target/backing plate assembly and method of making same |
US5863398A (en) * | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
US5766380A (en) * | 1996-11-05 | 1998-06-16 | Sony Corporation | Method for fabricating randomly oriented aluminum alloy sputtering targets with fine grains and fine precipitates |
US5963778A (en) * | 1997-02-13 | 1999-10-05 | Tosoh Smd, Inc. | Method for producing near net shape planar sputtering targets and an intermediate therefor |
EP1028824B1 (en) * | 1997-07-15 | 2002-10-09 | Tosoh Smd, Inc. | Refractory metal silicide alloy sputter targets, use and manufacture thereof |
US6010583A (en) * | 1997-09-09 | 2000-01-04 | Sony Corporation | Method of making unreacted metal/aluminum sputter target |
US6581669B2 (en) * | 1998-03-10 | 2003-06-24 | W.C. Heraeus Gmbh & Co., Kg | Sputtering target for depositing silicon layers in their nitride or oxide form and a process for its preparation |
CA2265098A1 (en) * | 1998-03-12 | 1999-09-12 | Abdelouahab Ziani | Method for producing aluminum alloy powder compacts |
US6332906B1 (en) * | 1998-03-24 | 2001-12-25 | California Consolidated Technology, Inc. | Aluminum-silicon alloy formed from a metal powder |
US6183686B1 (en) * | 1998-08-04 | 2001-02-06 | Tosoh Smd, Inc. | Sputter target assembly having a metal-matrix-composite backing plate and methods of making same |
US6153313A (en) * | 1998-10-06 | 2000-11-28 | General Electric Company | Nickel aluminide coating and coating systems formed therewith |
US6214177B1 (en) * | 1998-12-28 | 2001-04-10 | Ultraclad Corporation | Method of producing a silicon/aluminum sputtering target |
US6165413A (en) * | 1999-07-08 | 2000-12-26 | Praxair S.T. Technology, Inc. | Method of making high density sputtering targets |
US6475263B1 (en) * | 2001-04-11 | 2002-11-05 | Crucible Materials Corp. | Silicon aluminum alloy of prealloyed powder and method of manufacture |
DE10140589A1 (en) * | 2001-08-18 | 2003-02-27 | Heraeus Gmbh W C | Sputtering target made of a silicon alloy and method for producing a sputtering target |
JP2003089864A (en) * | 2001-09-18 | 2003-03-28 | Mitsui Mining & Smelting Co Ltd | Aluminum alloy thin film, wiring circuit having the same thin film, and target material depositing the thin film |
-
2003
- 2003-05-29 CN CNA038132117A patent/CN1685078A/en active Pending
- 2003-05-29 AU AU2003243332A patent/AU2003243332A1/en not_active Abandoned
- 2003-05-29 WO PCT/US2003/016827 patent/WO2003104522A1/en active Application Filing
- 2003-05-29 JP JP2004511577A patent/JP2005529239A/en active Pending
- 2003-05-29 EP EP03757295A patent/EP1511879A1/en not_active Withdrawn
- 2003-06-02 US US10/449,686 patent/US20040062675A1/en not_active Abandoned
- 2003-06-06 TW TW092115426A patent/TWI278524B/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6159625A (en) * | 1997-08-08 | 2000-12-12 | Hitachi Metals Ltd. | Target of intermetallic compound with B2-ordered lattice structure, production method thereof and magnetic recording medium having B2-structured underlayer |
US20020014406A1 (en) * | 1998-05-21 | 2002-02-07 | Hiroshi Takashima | Aluminum target material for sputtering and method for producing same |
US6042777A (en) * | 1999-08-03 | 2000-03-28 | Sony Corporation | Manufacturing of high density intermetallic sputter targets |
WO2002083974A1 (en) * | 2001-04-11 | 2002-10-24 | Heraeus, Inc. | Pt-co based sputtering targets |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1950322A1 (en) * | 2007-01-11 | 2008-07-30 | Heraeus, Inc. | Full density Co-W magnetic sputter targets |
CN104419846A (en) * | 2013-09-11 | 2015-03-18 | 安泰科技股份有限公司 | Titanium-aluminum-zirconium alloy target material and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
AU2003243332A1 (en) | 2003-12-22 |
US20040062675A1 (en) | 2004-04-01 |
JP2005529239A (en) | 2005-09-29 |
TW200404908A (en) | 2004-04-01 |
TWI278524B (en) | 2007-04-11 |
EP1511879A1 (en) | 2005-03-09 |
CN1685078A (en) | 2005-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
USRE40100E1 (en) | Fabrication of B/C/N/O/Si doped sputtering targets | |
US7229588B2 (en) | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidified alloy powders and elemental Pt metal | |
US6042777A (en) | Manufacturing of high density intermetallic sputter targets | |
KR101370189B1 (en) | Methods of making molybdenum titanium sputtering plates and targets | |
US20070189916A1 (en) | Sputtering targets and methods for fabricating sputtering targets having multiple materials | |
US20040062675A1 (en) | Fabrication of ductile intermetallic sputtering targets | |
WO2006001976A2 (en) | High purity target manufacturing methods | |
US20100140084A1 (en) | Method for production of aluminum containing targets | |
JP2016069700A (en) | Ti-Al alloy sputtering target | |
WO2021241522A1 (en) | METAL-Si BASED POWDER, METHOD FOR PRODUCING SAME, METAL-Si BASED SINTERED BODY, SPUTTERING TARGET, AND METAL-Si BASED THIN FILM MANUFACTURING METHOD | |
EP3170916B1 (en) | Sputterring target comprising al-te-cu-zr-based alloy and method of manufacturing the same | |
JPH02170969A (en) | Manufacture of target material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2003757295 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2004511577 Country of ref document: JP Ref document number: 20038132117 Country of ref document: CN |
|
WWP | Wipo information: published in national office |
Ref document number: 2003757295 Country of ref document: EP |