CN1290203C - 半导体器件的结构及其制造方法 - Google Patents

半导体器件的结构及其制造方法 Download PDF

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Publication number
CN1290203C
CN1290203C CNB021264384A CN02126438A CN1290203C CN 1290203 C CN1290203 C CN 1290203C CN B021264384 A CNB021264384 A CN B021264384A CN 02126438 A CN02126438 A CN 02126438A CN 1290203 C CN1290203 C CN 1290203C
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China
Prior art keywords
semiconductor substrate
gate electrode
forms
gate
semiconductor device
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Expired - Lifetime
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CNB021264384A
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English (en)
Chinese (zh)
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CN1405894A (zh
Inventor
柳赫株
安钟现
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN1405894A publication Critical patent/CN1405894A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/022—Manufacture or treatment of FETs having insulated gates [IGFET] having lightly-doped source or drain extensions selectively formed at the sides of the gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0218—Manufacture or treatment of FETs having insulated gates [IGFET] having pocket halo regions selectively formed at the sides of the gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01324—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T or inverted-T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H10D84/0133—Manufacturing common source or drain regions between multiple IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Two-Way Televisions, Distribution Of Moving Picture Or The Like (AREA)
  • Mobile Radio Communication Systems (AREA)
  • Television Systems (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
CNB021264384A 2001-08-04 2002-07-19 半导体器件的结构及其制造方法 Expired - Lifetime CN1290203C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR47148/2001 2001-08-04
KR47148/01 2001-08-04
KR1020010047148A KR100374649B1 (en) 2001-08-04 2001-08-04 Structure of semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
CN1405894A CN1405894A (zh) 2003-03-26
CN1290203C true CN1290203C (zh) 2006-12-13

Family

ID=19712880

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021264384A Expired - Lifetime CN1290203C (zh) 2001-08-04 2002-07-19 半导体器件的结构及其制造方法

Country Status (5)

Country Link
US (2) US6548862B2 (enExample)
JP (2) JP4148717B2 (enExample)
KR (1) KR100374649B1 (enExample)
CN (1) CN1290203C (enExample)
DE (1) DE10234392B4 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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WO2011091655A1 (zh) * 2010-01-28 2011-08-04 中国科学院上海微系统与信息技术研究所 大角度离子注入抑制soimos器件浮体效应的方法

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KR100398874B1 (ko) * 2001-11-21 2003-09-19 삼성전자주식회사 티자형의 게이트 전극을 갖는 모스 트랜지스터 및 그 제조방법
US6770932B2 (en) * 2002-07-10 2004-08-03 Kabushiki Kaisha Toshiba Semiconductor memory device having a memory region and a peripheral region, and a manufacturing method thereof
US6806126B1 (en) * 2002-09-06 2004-10-19 Advanced Micro Devices, Inc. Method of manufacturing a semiconductor component
JP3574644B2 (ja) * 2002-11-20 2004-10-06 沖電気工業株式会社 半導体装置の製造方法
US6905976B2 (en) * 2003-05-06 2005-06-14 International Business Machines Corporation Structure and method of forming a notched gate field effect transistor
KR100621546B1 (ko) * 2003-05-14 2006-09-13 삼성전자주식회사 엘리베이티드 소오스/드레인 구조의 모스트랜지스터 및 그제조방법
US7135373B2 (en) * 2003-09-23 2006-11-14 Texas Instruments Incorporated Reduction of channel hot carrier effects in transistor devices
DE102004005992B3 (de) * 2004-02-06 2005-11-17 Infineon Technologies Ag Herstellungsverfahren für eine Halbleiterstruktur
WO2006043328A1 (ja) * 2004-10-22 2006-04-27 Mitsubishi Denki Kabushiki Kaisha 情報格納システム及びデジタル放送受信端末及び情報格納装置
JP4646672B2 (ja) * 2005-03-31 2011-03-09 セイコーインスツル株式会社 コンテンツデータ配信システム、および受信装置
US20070001199A1 (en) * 2005-06-30 2007-01-04 Thunderbird Technologies, Inc. Circuits and Integrated Circuits Including Field Effect Transistors Having Differing Body Effects
JP4810932B2 (ja) * 2005-08-29 2011-11-09 カシオ計算機株式会社 携帯端末装置およびテレビ受信装置および番組表示制御方法
JP2007165541A (ja) * 2005-12-13 2007-06-28 Oki Electric Ind Co Ltd 半導体装置の製造方法
KR100846393B1 (ko) * 2007-03-30 2008-07-15 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 및 그 제조 방법
US20090218638A1 (en) * 2008-02-29 2009-09-03 Smith Michael A Nand flash peripheral circuitry field plate
CN101867665B (zh) * 2009-04-15 2015-04-01 中兴通讯股份有限公司 媒体资源播放系统、方法、以及业务服务器
US9048254B2 (en) * 2009-12-02 2015-06-02 United Microelectronics Corp. Semiconductor structure having a metal gate with side wall spacers
CN102386085A (zh) * 2010-09-06 2012-03-21 中国科学院微电子研究所 一种用于后栅工艺的平坦化方法及其器件结构
CN104217933B (zh) * 2013-06-05 2016-12-28 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US9349817B2 (en) * 2014-02-03 2016-05-24 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device including spacers having different dimensions
US10096523B2 (en) * 2015-11-30 2018-10-09 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer structure and manufacturing method thereof
JP2018148123A (ja) * 2017-03-08 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び半導体装置の製造方法
US10790148B2 (en) * 2018-05-23 2020-09-29 Globalfoundries Inc. Method to increase effective gate height
US20230282716A1 (en) * 2022-03-04 2023-09-07 Qualcomm Incorporated High performance device with double side contacts

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011091655A1 (zh) * 2010-01-28 2011-08-04 中国科学院上海微系统与信息技术研究所 大角度离子注入抑制soimos器件浮体效应的方法

Also Published As

Publication number Publication date
US20030151097A1 (en) 2003-08-14
US6548862B2 (en) 2003-04-15
DE10234392A1 (de) 2003-02-27
JP4903361B2 (ja) 2012-03-28
JP2004147336A (ja) 2004-05-20
KR100374649B1 (en) 2003-03-03
US20030030103A1 (en) 2003-02-13
JP4148717B2 (ja) 2008-09-10
DE10234392B4 (de) 2008-08-14
CN1405894A (zh) 2003-03-26
JP2003110104A (ja) 2003-04-11
US6764910B2 (en) 2004-07-20

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Granted publication date: 20061213