KR100374649B1 - Structure of semiconductor device and manufacturing method thereof - Google Patents

Structure of semiconductor device and manufacturing method thereof Download PDF

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Publication number
KR100374649B1
KR100374649B1 KR1020010047148A KR20010047148A KR100374649B1 KR 100374649 B1 KR100374649 B1 KR 100374649B1 KR 1020010047148 A KR1020010047148 A KR 1020010047148A KR 20010047148 A KR20010047148 A KR 20010047148A KR 100374649 B1 KR100374649 B1 KR 100374649B1
Authority
KR
South Korea
Prior art keywords
gate electrode
gate
ion implantation
oxide layer
silicon nitride
Prior art date
Application number
KR1020010047148A
Other languages
English (en)
Inventor
Jong Hyon Ahn
Hyuk Ju Ryu
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority to KR1020010047148A priority Critical patent/KR100374649B1/ko
Priority to US10/144,962 priority patent/US6548862B2/en
Priority to CNB021264384A priority patent/CN1290203C/zh
Priority to DE10234392A priority patent/DE10234392B4/de
Priority to JP2002227883A priority patent/JP4148717B2/ja
Priority to US10/371,093 priority patent/US6764910B2/en
Application granted granted Critical
Publication of KR100374649B1 publication Critical patent/KR100374649B1/ko
Priority to JP2003392420A priority patent/JP4903361B2/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66492—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a pocket or a lightly doped drain selectively formed at the side of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H01L21/823425—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures manufacturing common source or drain regions between a plurality of conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
KR1020010047148A 2000-07-27 2001-08-04 Structure of semiconductor device and manufacturing method thereof KR100374649B1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020010047148A KR100374649B1 (en) 2001-08-04 2001-08-04 Structure of semiconductor device and manufacturing method thereof
US10/144,962 US6548862B2 (en) 2001-08-04 2002-05-14 Structure of semiconductor device and method for manufacturing the same
CNB021264384A CN1290203C (zh) 2001-08-04 2002-07-19 半导体器件的结构及其制造方法
DE10234392A DE10234392B4 (de) 2001-08-04 2002-07-23 Halbleiterbauelement mit Gate-Elektrodenstruktur und Herstellungsverfahren hierfür
JP2002227883A JP4148717B2 (ja) 2001-08-04 2002-08-05 半導体素子の製造方法
US10/371,093 US6764910B2 (en) 2001-08-04 2003-02-21 Structure of semiconductor device and method for manufacturing the same
JP2003392420A JP4903361B2 (ja) 2000-07-27 2003-11-21 情報アクセス装置および方法ならびに情報提供装置および方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020010047148A KR100374649B1 (en) 2001-08-04 2001-08-04 Structure of semiconductor device and manufacturing method thereof

Publications (1)

Publication Number Publication Date
KR100374649B1 true KR100374649B1 (en) 2003-03-03

Family

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Application Number Title Priority Date Filing Date
KR1020010047148A KR100374649B1 (en) 2000-07-27 2001-08-04 Structure of semiconductor device and manufacturing method thereof

Country Status (5)

Country Link
US (2) US6548862B2 (ko)
JP (2) JP4148717B2 (ko)
KR (1) KR100374649B1 (ko)
CN (1) CN1290203C (ko)
DE (1) DE10234392B4 (ko)

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US6770932B2 (en) * 2002-07-10 2004-08-03 Kabushiki Kaisha Toshiba Semiconductor memory device having a memory region and a peripheral region, and a manufacturing method thereof
US6806126B1 (en) * 2002-09-06 2004-10-19 Advanced Micro Devices, Inc. Method of manufacturing a semiconductor component
JP3574644B2 (ja) * 2002-11-20 2004-10-06 沖電気工業株式会社 半導体装置の製造方法
US6905976B2 (en) * 2003-05-06 2005-06-14 International Business Machines Corporation Structure and method of forming a notched gate field effect transistor
US7135373B2 (en) * 2003-09-23 2006-11-14 Texas Instruments Incorporated Reduction of channel hot carrier effects in transistor devices
DE102004005992B3 (de) * 2004-02-06 2005-11-17 Infineon Technologies Ag Herstellungsverfahren für eine Halbleiterstruktur
WO2006043328A1 (ja) * 2004-10-22 2006-04-27 Mitsubishi Denki Kabushiki Kaisha 情報格納システム及びデジタル放送受信端末及び情報格納装置
JP4646672B2 (ja) * 2005-03-31 2011-03-09 セイコーインスツル株式会社 コンテンツデータ配信システム、および受信装置
US20070001199A1 (en) * 2005-06-30 2007-01-04 Thunderbird Technologies, Inc. Circuits and Integrated Circuits Including Field Effect Transistors Having Differing Body Effects
JP4810932B2 (ja) * 2005-08-29 2011-11-09 カシオ計算機株式会社 携帯端末装置およびテレビ受信装置および番組表示制御方法
JP2007165541A (ja) * 2005-12-13 2007-06-28 Oki Electric Ind Co Ltd 半導体装置の製造方法
KR100846393B1 (ko) * 2007-03-30 2008-07-15 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 및 그 제조 방법
US20090218638A1 (en) * 2008-02-29 2009-09-03 Smith Michael A Nand flash peripheral circuitry field plate
CN101867665B (zh) * 2009-04-15 2015-04-01 中兴通讯股份有限公司 媒体资源播放系统、方法、以及业务服务器
US9048254B2 (en) * 2009-12-02 2015-06-02 United Microelectronics Corp. Semiconductor structure having a metal gate with side wall spacers
CN101794712A (zh) * 2010-01-28 2010-08-04 中国科学院上海微系统与信息技术研究所 大角度离子注入抑制soi mos器件浮体效应的方法
CN102386085A (zh) * 2010-09-06 2012-03-21 中国科学院微电子研究所 一种用于后栅工艺的平坦化方法及其器件结构
CN104217933B (zh) * 2013-06-05 2016-12-28 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US9349817B2 (en) 2014-02-03 2016-05-24 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device including spacers having different dimensions
US10096523B2 (en) * 2015-11-30 2018-10-09 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer structure and manufacturing method thereof
JP2018148123A (ja) * 2017-03-08 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び半導体装置の製造方法
US10790148B2 (en) * 2018-05-23 2020-09-29 Globalfoundries Inc. Method to increase effective gate height
US20230282716A1 (en) * 2022-03-04 2023-09-07 Qualcomm Incorporated High performance device with double side contacts

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Also Published As

Publication number Publication date
US20030030103A1 (en) 2003-02-13
US20030151097A1 (en) 2003-08-14
JP2004147336A (ja) 2004-05-20
DE10234392B4 (de) 2008-08-14
CN1290203C (zh) 2006-12-13
JP4148717B2 (ja) 2008-09-10
US6764910B2 (en) 2004-07-20
JP4903361B2 (ja) 2012-03-28
US6548862B2 (en) 2003-04-15
JP2003110104A (ja) 2003-04-11
DE10234392A1 (de) 2003-02-27
CN1405894A (zh) 2003-03-26

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