IT1245795B - Procedimento per la formazione di uno strato di ossido di campo di un dispositivo a semiconduttore - Google Patents

Procedimento per la formazione di uno strato di ossido di campo di un dispositivo a semiconduttore

Info

Publication number
IT1245795B
IT1245795B ITMI910735A ITMI910735A IT1245795B IT 1245795 B IT1245795 B IT 1245795B IT MI910735 A ITMI910735 A IT MI910735A IT MI910735 A ITMI910735 A IT MI910735A IT 1245795 B IT1245795 B IT 1245795B
Authority
IT
Italy
Prior art keywords
oxide layer
field
field oxide
formation
layer
Prior art date
Application number
ITMI910735A
Other languages
English (en)
Inventor
Weon-Sik Paek
Taek-Yong Jang
Weon-Taek Choi
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI910735A0 publication Critical patent/ITMI910735A0/it
Publication of ITMI910735A1 publication Critical patent/ITMI910735A1/it
Application granted granted Critical
Publication of IT1245795B publication Critical patent/IT1245795B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Abstract

Procedimento per la formazione di uno strato di ossido di campo (36) consistente in:crescita di uno strato di ossido di pad (31) e deposizione di uno strato di nitruro (33);rimozione del nitruro (33) sopra la regione di campo; formazione di spaziatori (34) sulle pareti laterali del rimanente strato di nitruro;drogaggio delle regioni di campo;crescita di uno strato di ossido di campo (36) ossidando la porzione esposta del substrato nella regione di campo; planarizzazione dello strato di ossido di campo (36) con processo di retroattacco;riduzione dei problemi di copertura del gradino dello strato di ossido di campo (36).Vengono ridotti la dimensione del becco e lo stress ai margini della regione di campo. Lo strato di arresto del canale pesantemente drogato è formato solo nella regione mediana della regione di campo, prevenendo l'abbassamento della tensione di scarica e la perforazione.
ITMI910735A 1990-11-17 1991-03-19 Procedimento per la formazione di uno strato di ossido di campo di un dispositivo a semiconduttore IT1245795B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900018656A KR930011458B1 (ko) 1990-11-17 1990-11-17 반도체장치의 필드산화막 형성방법

Publications (3)

Publication Number Publication Date
ITMI910735A0 ITMI910735A0 (it) 1991-03-19
ITMI910735A1 ITMI910735A1 (it) 1992-09-19
IT1245795B true IT1245795B (it) 1994-10-18

Family

ID=19306174

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI910735A IT1245795B (it) 1990-11-17 1991-03-19 Procedimento per la formazione di uno strato di ossido di campo di un dispositivo a semiconduttore

Country Status (7)

Country Link
US (1) US5472905A (it)
JP (1) JP2812811B2 (it)
KR (1) KR930011458B1 (it)
DE (1) DE4109184C2 (it)
FR (1) FR2669467B1 (it)
GB (1) GB2249867B (it)
IT (1) IT1245795B (it)

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US5262346A (en) * 1992-12-16 1993-11-16 International Business Machines Corporation Nitride polish stop for forming SOI wafers
US5670412A (en) * 1995-07-25 1997-09-23 Micron Technology, Inc. Semiconductor processing methods of forming field oxidation regions on a semiconductor substrate
US5882985A (en) * 1995-10-10 1999-03-16 Advanced Micro Devices, Inc. Reduction of field oxide step height during semiconductor fabrication
KR100366612B1 (ko) * 1995-11-20 2003-03-03 삼성전자 주식회사 평탄화된필드절연막을갖는반도체장치의제조방법
US5904543A (en) * 1996-03-28 1999-05-18 Advanced Micro Devices, Inc Method for formation of offset trench isolation by the use of disposable spacer and trench oxidation
US5780353A (en) * 1996-03-28 1998-07-14 Advanced Micro Devices, Inc. Method of doping trench sidewalls before trench etching
US5861104A (en) * 1996-03-28 1999-01-19 Advanced Micro Devices Trench isolation with rounded top and bottom corners and edges
US5646063A (en) * 1996-03-28 1997-07-08 Advanced Micro Devices, Inc. Hybrid of local oxidation of silicon isolation and trench isolation for a semiconductor device
US6097072A (en) * 1996-03-28 2000-08-01 Advanced Micro Devices Trench isolation with suppressed parasitic edge transistors
US5742090A (en) * 1996-04-04 1998-04-21 Advanced Micro Devices, Inc. Narrow width trenches for field isolation in integrated circuits
US5874317A (en) * 1996-06-12 1999-02-23 Advanced Micro Devices, Inc. Trench isolation for integrated circuits
US5777370A (en) * 1996-06-12 1998-07-07 Advanced Micro Devices, Inc. Trench isolation of field effect transistors
US5652177A (en) * 1996-08-22 1997-07-29 Chartered Semiconductor Manufacturing Pte Ltd Method for fabricating a planar field oxide region
US5728614A (en) * 1996-09-25 1998-03-17 Vanguard International Semiconductor Corporation Method to improve the topography of a field oxide region
US6087239A (en) 1996-11-22 2000-07-11 Micron Technology, Inc. Disposable spacer and method of forming and using same
US5851901A (en) * 1997-04-11 1998-12-22 Advanced Micro Devices Method of manufacturing an isolation region of a semiconductor device with advanced planarization
US6184105B1 (en) 1997-05-22 2001-02-06 Advanced Micro Devices Method for post transistor isolation
JPH11214384A (ja) * 1998-01-28 1999-08-06 Mitsubishi Electric Corp 半導体装置の製造方法
US5880006A (en) * 1998-05-22 1999-03-09 Vlsi Technology, Inc. Method for fabrication of a semiconductor device
US6727161B2 (en) 2000-02-16 2004-04-27 Cypress Semiconductor Corp. Isolation technology for submicron semiconductor devices
US7230745B1 (en) * 2002-04-08 2007-06-12 Captaris, Inc. Document transmission and routing with recipient control, such as facsimile document transmission and routing
US20230319159A1 (en) * 2005-10-31 2023-10-05 Treber Rebert Queue processor for document servers
US20070177195A1 (en) * 2005-10-31 2007-08-02 Treber Rebert Queue processor for document servers
WO2007053717A2 (en) * 2005-10-31 2007-05-10 Captaris, Inc. Universal document transport
US20080030774A1 (en) 2006-08-02 2008-02-07 Webster Jason K Configurable document server

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JPS5710246A (en) * 1980-03-06 1982-01-19 Toshiba Corp Manufacture of semiconductor device
JPS5735341A (en) * 1980-08-12 1982-02-25 Toshiba Corp Method of seperating elements of semiconductor device
JPS58147041A (ja) * 1982-02-24 1983-09-01 Fujitsu Ltd 半導体装置の製造方法
JPS6050939A (ja) * 1983-08-30 1985-03-22 Toshiba Corp 半導体装置の製造方法
US4631219A (en) * 1985-01-31 1986-12-23 International Business Machines Corporation Growth of bird's beak free semi-rox
JPS62232143A (ja) * 1986-04-01 1987-10-12 Toshiba Corp 半導体装置の製造方法
KR880008448A (ko) * 1986-12-17 1988-08-31 강진구 측면 격리 소자 분리방법
DE3865058D1 (de) * 1987-02-24 1991-10-31 Sgs Thomson Microelectronics Isolationsverfahren mit einer durch eine schutzschicht aus oxid geschuetzten zwischenschicht.
JPS63302536A (ja) * 1987-06-02 1988-12-09 Sanyo Electric Co Ltd 素子分離領域の形成方法
JPH0198246A (ja) * 1987-10-12 1989-04-17 Sony Corp 半導体装置の製造方法
JPH01256147A (ja) * 1988-04-05 1989-10-12 Sharp Corp 半導体装置の製造方法
JPH01282839A (ja) * 1988-05-09 1989-11-14 Nec Corp 素子分離の製造方法
JPH088298B2 (ja) * 1988-10-04 1996-01-29 沖電気工業株式会社 半導体素子の製造方法
JPH02117150A (ja) * 1988-10-27 1990-05-01 Nec Corp 半導体装置の製造方法
US4897364A (en) * 1989-02-27 1990-01-30 Motorola, Inc. Method for locos isolation using a framed oxidation mask and a polysilicon buffer layer
US4965221A (en) * 1989-03-15 1990-10-23 Micron Technology, Inc. Spacer isolation method for minimizing parasitic sidewall capacitance and creating fully recessed field oxide regions

Also Published As

Publication number Publication date
GB2249867A (en) 1992-05-20
FR2669467B1 (fr) 1997-07-04
JP2812811B2 (ja) 1998-10-22
KR930011458B1 (ko) 1993-12-08
DE4109184A1 (de) 1992-05-21
US5472905A (en) 1995-12-05
ITMI910735A1 (it) 1992-09-19
JPH04234146A (ja) 1992-08-21
GB9105923D0 (en) 1991-05-08
ITMI910735A0 (it) 1991-03-19
KR920010829A (ko) 1992-06-27
FR2669467A1 (fr) 1992-05-22
DE4109184C2 (de) 1995-12-21
GB2249867B (en) 1995-04-05

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970326