KR880008448A - 측면 격리 소자 분리방법 - Google Patents
측면 격리 소자 분리방법 Download PDFInfo
- Publication number
- KR880008448A KR880008448A KR860010846A KR860010846A KR880008448A KR 880008448 A KR880008448 A KR 880008448A KR 860010846 A KR860010846 A KR 860010846A KR 860010846 A KR860010846 A KR 860010846A KR 880008448 A KR880008448 A KR 880008448A
- Authority
- KR
- South Korea
- Prior art keywords
- film layer
- forming
- spacer
- nitride film
- opening
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1(A)-(C)l도는 종래의 분리영역 제조공정도.
제2(A)-(E)도는 본 발명에 따른 분리 영역 제조공정도.
Claims (2)
- 반도체 장치의 제조방법에 있어서, 제1도 전형의 실리콘 반도체 기판상에 산화막층(21)을 형성하는 제1공정과, 상기 산화막층(21)상부에 산화마스크로 사용되는 절화막층(22)을 형성하는 제2공정과, 상기 질화막층(22)의 일부를 식각하여 개구(24)를 형성하는 제3공정과, 개구(24) 형성후 상기 개구의 상부와 질화막층(22) 상부표면에 다결정 실리콘막(25)를 침적하는 제4공정과, 마스크의 사용없이 상기 질화막층(22)을 반응성 이온에칭을 하여 상기 개구(24)의 질화막층(22)의 벽면에 접하여 소정폭의 스페이서 다결정 부분(26)을 형성하는 제5공정과, 상기 스페이서 다결정 부분(26) 형성후 필드 산화막을 형성하여 상기 스페이서 다결정부분(26)이 산화되게 하는 제6공정과, 상기 산화공정후 질화막층(22)과 산화막층의 표면을 에칭하여 소정두께의 필드 산화막층으로 된 분리 영역을 형성하는 제7공정을 구비함을 특징으로 하는 측면 격리 소자 분리방법.
- 제1항에 있어서, 스페이서 다결정 부분(26)형성후 필드 이온 주입을 함을 특징으로 하는 측면 격리 소자분리 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR860010846A KR880008448A (ko) | 1986-12-17 | 1986-12-17 | 측면 격리 소자 분리방법 |
GB08729422A GB2198882A (en) | 1986-12-17 | 1987-12-17 | A method of semiconductor device isolation by lateral separation |
JP62317677A JPS63288043A (ja) | 1986-12-17 | 1987-12-17 | 側面隔離素子の分離方法 |
DE19873742912 DE3742912A1 (de) | 1986-12-17 | 1987-12-17 | Verfahren zur herstellung von halbleiter-schaltungen |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR860010846A KR880008448A (ko) | 1986-12-17 | 1986-12-17 | 측면 격리 소자 분리방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR880008448A true KR880008448A (ko) | 1988-08-31 |
Family
ID=19254090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR860010846A KR880008448A (ko) | 1986-12-17 | 1986-12-17 | 측면 격리 소자 분리방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS63288043A (ko) |
KR (1) | KR880008448A (ko) |
DE (1) | DE3742912A1 (ko) |
GB (1) | GB2198882A (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0775243B2 (ja) * | 1989-02-22 | 1995-08-09 | 株式会社東芝 | 半導体装置の製造方法 |
US4965221A (en) * | 1989-03-15 | 1990-10-23 | Micron Technology, Inc. | Spacer isolation method for minimizing parasitic sidewall capacitance and creating fully recessed field oxide regions |
GB2238658B (en) * | 1989-11-23 | 1993-02-17 | Stc Plc | Improvements in integrated circuits |
KR930011458B1 (ko) * | 1990-11-17 | 1993-12-08 | 삼성전자 주식회사 | 반도체장치의 필드산화막 형성방법 |
KR930011460B1 (ko) * | 1991-01-22 | 1993-12-08 | 삼성전자 주식회사 | 반도체 장치의 소자분리 영역 형성방법 |
US5286672A (en) * | 1991-06-28 | 1994-02-15 | Sgs-Thomson Microelectronics, Inc. | Method for forming field oxide regions |
KR960014448B1 (ko) * | 1993-12-14 | 1996-10-15 | 금성일렉트론 주식회사 | 반도체 소자간의 격리방법 |
DE69524992T2 (de) * | 1994-06-08 | 2002-06-27 | Samsung Electronics Co Ltd | Verfahren zur Isolierung von Teilen einer Halbleitervorrichtung |
US5599730A (en) * | 1994-12-08 | 1997-02-04 | Lucent Technologies Inc. | Poly-buffered LOCOS |
CN112086352B (zh) * | 2020-08-06 | 2024-02-20 | 北京晶亦精微科技股份有限公司 | 一种利用Locos生长氧化隔离层以及制备IGBT芯片的工艺 |
CN114429983A (zh) * | 2022-04-01 | 2022-05-03 | 北京芯可鉴科技有限公司 | 高压横向双扩散金属氧化物半导体场效应管及其制作方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5735341A (en) * | 1980-08-12 | 1982-02-25 | Toshiba Corp | Method of seperating elements of semiconductor device |
EP0067738A3 (en) * | 1981-05-26 | 1986-06-11 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Method of reducing encroachment in a semiconductor device |
US4435446A (en) * | 1982-11-15 | 1984-03-06 | Hewlett-Packard Company | Edge seal with polysilicon in LOCOS process |
JPS59139644A (ja) * | 1983-01-31 | 1984-08-10 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
US4631219A (en) * | 1985-01-31 | 1986-12-23 | International Business Machines Corporation | Growth of bird's beak free semi-rox |
-
1986
- 1986-12-17 KR KR860010846A patent/KR880008448A/ko not_active IP Right Cessation
-
1987
- 1987-12-17 GB GB08729422A patent/GB2198882A/en active Pending
- 1987-12-17 DE DE19873742912 patent/DE3742912A1/de not_active Withdrawn
- 1987-12-17 JP JP62317677A patent/JPS63288043A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS63288043A (ja) | 1988-11-25 |
GB8729422D0 (en) | 1988-02-03 |
GB2198882A (en) | 1988-06-22 |
DE3742912A1 (de) | 1988-06-30 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
SUBM | Submission of document of abandonment before or after decision of registration |