GB8729422D0 - Method of semiconductor device isolation by lateral separation - Google Patents

Method of semiconductor device isolation by lateral separation

Info

Publication number
GB8729422D0
GB8729422D0 GB878729422A GB8729422A GB8729422D0 GB 8729422 D0 GB8729422 D0 GB 8729422D0 GB 878729422 A GB878729422 A GB 878729422A GB 8729422 A GB8729422 A GB 8729422A GB 8729422 D0 GB8729422 D0 GB 8729422D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
device isolation
lateral separation
lateral
separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB878729422A
Other versions
GB2198882A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Semiconductor and Telecomunications Co Ltd
Original Assignee
Samsung Semiconductor and Telecomunications Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor and Telecomunications Co Ltd filed Critical Samsung Semiconductor and Telecomunications Co Ltd
Publication of GB8729422D0 publication Critical patent/GB8729422D0/en
Publication of GB2198882A publication Critical patent/GB2198882A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
GB08729422A 1986-12-17 1987-12-17 A method of semiconductor device isolation by lateral separation Pending GB2198882A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR860010846A KR880008448A (en) 1986-12-17 1986-12-17 How to remove the side isolation device

Publications (2)

Publication Number Publication Date
GB8729422D0 true GB8729422D0 (en) 1988-02-03
GB2198882A GB2198882A (en) 1988-06-22

Family

ID=19254090

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08729422A Pending GB2198882A (en) 1986-12-17 1987-12-17 A method of semiconductor device isolation by lateral separation

Country Status (4)

Country Link
JP (1) JPS63288043A (en)
KR (1) KR880008448A (en)
DE (1) DE3742912A1 (en)
GB (1) GB2198882A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112086352A (en) * 2020-08-06 2020-12-15 北京烁科精微电子装备有限公司 Process for growing oxidation isolation layer by using Locos and preparing IGBT chip
CN114429983A (en) * 2022-04-01 2022-05-03 北京芯可鉴科技有限公司 High-voltage transverse double-diffusion metal oxide semiconductor field effect transistor and manufacturing method thereof

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0775243B2 (en) * 1989-02-22 1995-08-09 株式会社東芝 Method for manufacturing semiconductor device
US4965221A (en) * 1989-03-15 1990-10-23 Micron Technology, Inc. Spacer isolation method for minimizing parasitic sidewall capacitance and creating fully recessed field oxide regions
GB2238658B (en) * 1989-11-23 1993-02-17 Stc Plc Improvements in integrated circuits
KR930011458B1 (en) * 1990-11-17 1993-12-08 삼성전자 주식회사 Field oxide forming method of semiconductor
KR930011460B1 (en) * 1991-01-22 1993-12-08 삼성전자 주식회사 Isolation forming method of semiconductor
US5286672A (en) * 1991-06-28 1994-02-15 Sgs-Thomson Microelectronics, Inc. Method for forming field oxide regions
KR960014448B1 (en) * 1993-12-14 1996-10-15 금성일렉트론 주식회사 Method of isolation of a semiconductor device
US5641705A (en) * 1994-06-08 1997-06-24 Samsung Electronics Co., Ltd. Device isolation method of semiconductor device
US5599730A (en) * 1994-12-08 1997-02-04 Lucent Technologies Inc. Poly-buffered LOCOS

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735341A (en) * 1980-08-12 1982-02-25 Toshiba Corp Method of seperating elements of semiconductor device
EP0067738A3 (en) * 1981-05-26 1986-06-11 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Method of reducing encroachment in a semiconductor device
US4435446A (en) * 1982-11-15 1984-03-06 Hewlett-Packard Company Edge seal with polysilicon in LOCOS process
JPS59139644A (en) * 1983-01-31 1984-08-10 Oki Electric Ind Co Ltd Manufacture of semiconductor device
US4631219A (en) * 1985-01-31 1986-12-23 International Business Machines Corporation Growth of bird's beak free semi-rox

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112086352A (en) * 2020-08-06 2020-12-15 北京烁科精微电子装备有限公司 Process for growing oxidation isolation layer by using Locos and preparing IGBT chip
CN112086352B (en) * 2020-08-06 2024-02-20 北京晶亦精微科技股份有限公司 Technology for growing oxidation isolation layer and preparing IGBT chip by using Locos
CN114429983A (en) * 2022-04-01 2022-05-03 北京芯可鉴科技有限公司 High-voltage transverse double-diffusion metal oxide semiconductor field effect transistor and manufacturing method thereof

Also Published As

Publication number Publication date
JPS63288043A (en) 1988-11-25
KR880008448A (en) 1988-08-31
GB2198882A (en) 1988-06-22
DE3742912A1 (en) 1988-06-30

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)