JP4148717B2 - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法 Download PDF

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Publication number
JP4148717B2
JP4148717B2 JP2002227883A JP2002227883A JP4148717B2 JP 4148717 B2 JP4148717 B2 JP 4148717B2 JP 2002227883 A JP2002227883 A JP 2002227883A JP 2002227883 A JP2002227883 A JP 2002227883A JP 4148717 B2 JP4148717 B2 JP 4148717B2
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Japan
Prior art keywords
gate electrode
semiconductor substrate
forming
ion implantation
oxide film
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Expired - Fee Related
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JP2002227883A
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English (en)
Japanese (ja)
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JP2003110104A (ja
Inventor
赫 株 柳
鍾 現 安
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of JP2003110104A publication Critical patent/JP2003110104A/ja
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Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/022—Manufacture or treatment of FETs having insulated gates [IGFET] having lightly-doped source or drain extensions selectively formed at the sides of the gates
    • H10P10/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0218—Manufacture or treatment of FETs having insulated gates [IGFET] having pocket halo regions selectively formed at the sides of the gates
    • H10D64/01306—
    • H10D64/01324—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H10D84/0133—Manufacturing common source or drain regions between multiple IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P30/222—

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Two-Way Televisions, Distribution Of Moving Picture Or The Like (AREA)
  • Mobile Radio Communication Systems (AREA)
  • Television Systems (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2002227883A 2001-08-04 2002-08-05 半導体素子の製造方法 Expired - Fee Related JP4148717B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2001-047148 2001-08-04
KR1020010047148A KR100374649B1 (en) 2001-08-04 2001-08-04 Structure of semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JP2003110104A JP2003110104A (ja) 2003-04-11
JP4148717B2 true JP4148717B2 (ja) 2008-09-10

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2002227883A Expired - Fee Related JP4148717B2 (ja) 2001-08-04 2002-08-05 半導体素子の製造方法
JP2003392420A Expired - Fee Related JP4903361B2 (ja) 2000-07-27 2003-11-21 情報アクセス装置および方法ならびに情報提供装置および方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2003392420A Expired - Fee Related JP4903361B2 (ja) 2000-07-27 2003-11-21 情報アクセス装置および方法ならびに情報提供装置および方法

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Country Link
US (2) US6548862B2 (enExample)
JP (2) JP4148717B2 (enExample)
KR (1) KR100374649B1 (enExample)
CN (1) CN1290203C (enExample)
DE (1) DE10234392B4 (enExample)

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KR100398874B1 (ko) * 2001-11-21 2003-09-19 삼성전자주식회사 티자형의 게이트 전극을 갖는 모스 트랜지스터 및 그 제조방법
US6770932B2 (en) * 2002-07-10 2004-08-03 Kabushiki Kaisha Toshiba Semiconductor memory device having a memory region and a peripheral region, and a manufacturing method thereof
US6806126B1 (en) * 2002-09-06 2004-10-19 Advanced Micro Devices, Inc. Method of manufacturing a semiconductor component
JP3574644B2 (ja) * 2002-11-20 2004-10-06 沖電気工業株式会社 半導体装置の製造方法
US6905976B2 (en) * 2003-05-06 2005-06-14 International Business Machines Corporation Structure and method of forming a notched gate field effect transistor
KR100621546B1 (ko) * 2003-05-14 2006-09-13 삼성전자주식회사 엘리베이티드 소오스/드레인 구조의 모스트랜지스터 및 그제조방법
US7135373B2 (en) * 2003-09-23 2006-11-14 Texas Instruments Incorporated Reduction of channel hot carrier effects in transistor devices
DE102004005992B3 (de) * 2004-02-06 2005-11-17 Infineon Technologies Ag Herstellungsverfahren für eine Halbleiterstruktur
WO2006043328A1 (ja) * 2004-10-22 2006-04-27 Mitsubishi Denki Kabushiki Kaisha 情報格納システム及びデジタル放送受信端末及び情報格納装置
JP4646672B2 (ja) * 2005-03-31 2011-03-09 セイコーインスツル株式会社 コンテンツデータ配信システム、および受信装置
US20070001199A1 (en) * 2005-06-30 2007-01-04 Thunderbird Technologies, Inc. Circuits and Integrated Circuits Including Field Effect Transistors Having Differing Body Effects
JP4810932B2 (ja) * 2005-08-29 2011-11-09 カシオ計算機株式会社 携帯端末装置およびテレビ受信装置および番組表示制御方法
JP2007165541A (ja) * 2005-12-13 2007-06-28 Oki Electric Ind Co Ltd 半導体装置の製造方法
KR100846393B1 (ko) * 2007-03-30 2008-07-15 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 및 그 제조 방법
US20090218638A1 (en) * 2008-02-29 2009-09-03 Smith Michael A Nand flash peripheral circuitry field plate
CN101867665B (zh) * 2009-04-15 2015-04-01 中兴通讯股份有限公司 媒体资源播放系统、方法、以及业务服务器
US9048254B2 (en) * 2009-12-02 2015-06-02 United Microelectronics Corp. Semiconductor structure having a metal gate with side wall spacers
CN101794712A (zh) * 2010-01-28 2010-08-04 中国科学院上海微系统与信息技术研究所 大角度离子注入抑制soi mos器件浮体效应的方法
CN102386085A (zh) * 2010-09-06 2012-03-21 中国科学院微电子研究所 一种用于后栅工艺的平坦化方法及其器件结构
CN104217933B (zh) * 2013-06-05 2016-12-28 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US9349817B2 (en) * 2014-02-03 2016-05-24 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device including spacers having different dimensions
US10096523B2 (en) * 2015-11-30 2018-10-09 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer structure and manufacturing method thereof
JP2018148123A (ja) * 2017-03-08 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び半導体装置の製造方法
US10790148B2 (en) * 2018-05-23 2020-09-29 Globalfoundries Inc. Method to increase effective gate height
US20230282716A1 (en) * 2022-03-04 2023-09-07 Qualcomm Incorporated High performance device with double side contacts

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JPS63141467A (ja) * 1986-12-03 1988-06-13 Matsushita Graphic Commun Syst Inc 番組自動受信起動装置
JPH03220729A (ja) * 1990-01-25 1991-09-27 Nec Corp 電界効果型トランジスタの製造方法
US5744372A (en) * 1995-04-12 1998-04-28 National Semiconductor Corporation Fabrication of complementary field-effect transistors each having multi-part channel
JP3714995B2 (ja) * 1995-07-05 2005-11-09 シャープ株式会社 半導体装置
JPH09160852A (ja) * 1995-12-05 1997-06-20 Nippon Telegr & Teleph Corp <Ntt> 情報提供装置
JPH09289498A (ja) * 1996-04-24 1997-11-04 Toshiba Corp 番組放送システム
JPH1056632A (ja) * 1996-08-07 1998-02-24 Toshiba Corp 放送システムおよび放送受信装置
JP3167109B2 (ja) * 1996-12-16 2001-05-21 株式会社アクセス テレビ番組と連携してインターネットホームページを自動的にテレビ画面上に表示させる方法および装置
US5843815A (en) * 1997-01-15 1998-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a MOSFET device, for an SRAM cell, using a self-aligned ion implanted halo region
JPH10261285A (ja) * 1997-03-19 1998-09-29 Matsushita Electric Ind Co Ltd 記録再生装置
KR100260044B1 (ko) * 1997-11-25 2000-07-01 윤종용 고속/고성능 모스 트랜지스터 및 그 제조방법
JP4249814B2 (ja) * 1998-01-14 2009-04-08 株式会社インフォシティ 情報アクセス方法および装置
US6049114A (en) * 1998-07-20 2000-04-11 Motorola, Inc. Semiconductor device having a metal containing layer overlying a gate dielectric
JP2000156502A (ja) * 1998-09-21 2000-06-06 Texas Instr Inc <Ti> 集積回路及び方法
JP3237626B2 (ja) * 1998-10-02 2001-12-10 日本電気株式会社 半導体装置の製造方法
JP4280946B2 (ja) * 1998-12-28 2009-06-17 ソニー株式会社 情報処理システムおよび方法、携帯端末、情報処理装置、並びに、記録媒体
US6168995B1 (en) * 1999-01-12 2001-01-02 Lucent Technologies Inc. Method of fabricating a split gate memory cell

Also Published As

Publication number Publication date
US6548862B2 (en) 2003-04-15
JP4903361B2 (ja) 2012-03-28
CN1405894A (zh) 2003-03-26
US20030151097A1 (en) 2003-08-14
US6764910B2 (en) 2004-07-20
KR100374649B1 (en) 2003-03-03
JP2004147336A (ja) 2004-05-20
DE10234392A1 (de) 2003-02-27
CN1290203C (zh) 2006-12-13
US20030030103A1 (en) 2003-02-13
JP2003110104A (ja) 2003-04-11
DE10234392B4 (de) 2008-08-14

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