CN1290186C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1290186C
CN1290186C CNB031424244A CN03142424A CN1290186C CN 1290186 C CN1290186 C CN 1290186C CN B031424244 A CNB031424244 A CN B031424244A CN 03142424 A CN03142424 A CN 03142424A CN 1290186 C CN1290186 C CN 1290186C
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CN
China
Prior art keywords
film
barrier metal
metal film
semiconductor device
conductor pattern
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Expired - Fee Related
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CNB031424244A
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English (en)
Chinese (zh)
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CN1467837A (zh
Inventor
渡邉健一
河野通有
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Fujitsu Semiconductor Ltd
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Fujitsu Ltd
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Publication of CN1467837A publication Critical patent/CN1467837A/zh
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Publication of CN1290186C publication Critical patent/CN1290186C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/036—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being within a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
    • H10W20/039—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures also covering sidewalls of the conductive structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/085—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/088—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving partial etching of via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/0888—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures wherein via-level dielectrics are compositionally different than trench-level dielectrics

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB031424244A 2002-06-06 2003-06-06 半导体器件及其制造方法 Expired - Fee Related CN1290186C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002165818 2002-06-06
JP165818/2002 2002-06-06
JP076962/2003 2003-03-20
JP2003076962A JP4250006B2 (ja) 2002-06-06 2003-03-20 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
CN1467837A CN1467837A (zh) 2004-01-14
CN1290186C true CN1290186C (zh) 2006-12-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031424244A Expired - Fee Related CN1290186C (zh) 2002-06-06 2003-06-06 半导体器件及其制造方法

Country Status (5)

Country Link
US (2) US7119439B2 (https=)
JP (1) JP4250006B2 (https=)
KR (2) KR100930556B1 (https=)
CN (1) CN1290186C (https=)
TW (1) TWI296434B (https=)

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US20040245636A1 (en) * 2003-06-06 2004-12-09 International Business Machines Corporation Full removal of dual damascene metal level
US7387960B2 (en) * 2003-09-16 2008-06-17 Texas Instruments Incorporated Dual depth trench termination method for improving Cu-based interconnect integrity
JPWO2005034234A1 (ja) * 2003-10-02 2006-12-14 富士通株式会社 半導体装置及びその製造方法
JP2005136215A (ja) * 2003-10-30 2005-05-26 Toshiba Corp 半導体装置
JP2005142262A (ja) * 2003-11-05 2005-06-02 Toshiba Corp 半導体装置および半導体装置の製造方法
JP4603281B2 (ja) 2004-03-31 2010-12-22 ルネサスエレクトロニクス株式会社 半導体装置
JP4946436B2 (ja) * 2004-03-31 2012-06-06 日本電気株式会社 半導体装置及びその製造方法
JP4280204B2 (ja) 2004-06-15 2009-06-17 Ｏｋｉセミコンダクタ株式会社 半導体装置
JP2006073891A (ja) * 2004-09-03 2006-03-16 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
US7777338B2 (en) * 2004-09-13 2010-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structure for integrated circuit chips
US7125791B2 (en) * 2004-10-12 2006-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Advanced copper damascene structure
KR100782202B1 (ko) 2005-02-25 2007-12-05 가부시끼가이샤 도시바 반도체 장치 및 그 제조 방법
US7479447B2 (en) * 2005-04-04 2009-01-20 International Business Machines Corporation Method of forming a crack stop void in a low-k dielectric layer between adjacent fuses
JP2007012996A (ja) * 2005-07-01 2007-01-18 Toshiba Corp 半導体装置
JP2007019188A (ja) * 2005-07-06 2007-01-25 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP4282646B2 (ja) * 2005-09-09 2009-06-24 株式会社東芝 半導体装置の製造方法
JP4699172B2 (ja) * 2005-10-25 2011-06-08 ルネサスエレクトロニクス株式会社 半導体装置
US7449785B2 (en) * 2006-02-06 2008-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Solder bump on a semiconductor substrate
JP2008016638A (ja) * 2006-07-06 2008-01-24 Sony Corp 半導体装置
JP4864608B2 (ja) * 2006-08-28 2012-02-01 東京エレクトロン株式会社 課金方法、記憶媒体及び半導体デバイス製造装置
JP4506767B2 (ja) * 2007-02-28 2010-07-21 カシオ計算機株式会社 半導体装置の製造方法
JP5332200B2 (ja) * 2007-03-22 2013-11-06 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
KR100995558B1 (ko) 2007-03-22 2010-11-22 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법
WO2008126268A1 (ja) * 2007-03-30 2008-10-23 Fujitsu Microelectronics Limited 半導体装置
JP5117791B2 (ja) * 2007-08-22 2013-01-16 ルネサスエレクトロニクス株式会社 半導体装置
JP2009076782A (ja) * 2007-09-21 2009-04-09 Sharp Corp 半導体基板、その製造方法、および半導体チップ
JP2009088269A (ja) * 2007-09-28 2009-04-23 Toshiba Corp 半導体装置、およびその製造方法
JP2009135139A (ja) * 2007-11-28 2009-06-18 Toshiba Corp 半導体装置及びその製造方法
US7704804B2 (en) 2007-12-10 2010-04-27 International Business Machines Corporation Method of forming a crack stop laser fuse with fixed passivation layer coverage
US7956466B2 (en) * 2008-05-09 2011-06-07 International Business Machines Corporation Structure for interconnect structure containing various capping materials for electrical fuse and other related applications
US8772156B2 (en) * 2008-05-09 2014-07-08 International Business Machines Corporation Methods of fabricating interconnect structures containing various capping materials for electrical fuse and other related applications
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US8592941B2 (en) 2010-07-19 2013-11-26 International Business Machines Corporation Fuse structure having crack stop void, method for forming and programming same, and design structure
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Also Published As

Publication number Publication date
US20050042816A1 (en) 2005-02-24
TW200401403A (en) 2004-01-16
KR20090094204A (ko) 2009-09-04
CN1467837A (zh) 2004-01-14
KR100964263B1 (ko) 2010-06-16
US7119439B2 (en) 2006-10-10
KR100930556B1 (ko) 2009-12-09
US7241676B2 (en) 2007-07-10
TWI296434B (en) 2008-05-01
JP4250006B2 (ja) 2009-04-08
US20030227089A1 (en) 2003-12-11
KR20030095245A (ko) 2003-12-18
JP2004064046A (ja) 2004-02-26

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