CN100339972C - 半导体器件和其制造方法 - Google Patents
半导体器件和其制造方法 Download PDFInfo
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- CN100339972C CN100339972C CNB03147165XA CN03147165A CN100339972C CN 100339972 C CN100339972 C CN 100339972C CN B03147165X A CNB03147165X A CN B03147165XA CN 03147165 A CN03147165 A CN 03147165A CN 100339972 C CN100339972 C CN 100339972C
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- Prior art keywords
- copper
- metal layer
- layer
- interconnection
- containing metal
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims description 95
- 229910052751 metal Inorganic materials 0.000 claims abstract description 571
- 239000002184 metal Substances 0.000 claims abstract description 565
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- 238000004544 sputter deposition Methods 0.000 claims description 84
- 238000009713 electroplating Methods 0.000 claims description 66
- 238000004519 manufacturing process Methods 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 21
- 238000011049 filling Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 abstract description 366
- 239000010949 copper Substances 0.000 abstract description 366
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 365
- 238000010438 heat treatment Methods 0.000 abstract description 50
- 230000004888 barrier function Effects 0.000 abstract description 32
- 229910052715 tantalum Inorganic materials 0.000 abstract description 22
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- 239000010410 layer Substances 0.000 description 442
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- 238000005229 chemical vapour deposition Methods 0.000 description 18
- 229910052709 silver Inorganic materials 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 16
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
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- 229910052749 magnesium Inorganic materials 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
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- 239000011261 inert gas Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
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- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
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- 229910052790 beryllium Inorganic materials 0.000 description 3
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- 239000004642 Polyimide Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
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- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000090 poly(aryl ether) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910001122 Mischmetal Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 230000016507 interphase Effects 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
互连结构 | 淀积方法 | 含银量重量% | 成品率 |
a1 | 电镀→偏压溅射 | 0.1 | 88~98 |
a2 | 电镀→偏压溅射 | 0 | 78~84 |
a3 | 电镀 | 0.1 | 72~82 |
a4 | 电镀 | 0 | 8~19 |
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2002198432A JP4555540B2 (ja) | 2002-07-08 | 2002-07-08 | 半導体装置 |
JP198432/2002 | 2002-07-08 |
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CN2007100889078A Division CN101030568B (zh) | 2002-07-08 | 2003-07-08 | 半导体器件和金属互连 |
Publications (2)
Publication Number | Publication Date |
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CN1494129A CN1494129A (zh) | 2004-05-05 |
CN100339972C true CN100339972C (zh) | 2007-09-26 |
Family
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CN2007100889078A Expired - Fee Related CN101030568B (zh) | 2002-07-08 | 2003-07-08 | 半导体器件和金属互连 |
CNB03147165XA Expired - Fee Related CN100339972C (zh) | 2002-07-08 | 2003-07-08 | 半导体器件和其制造方法 |
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CN2007100889078A Expired - Fee Related CN101030568B (zh) | 2002-07-08 | 2003-07-08 | 半导体器件和金属互连 |
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Country | Link |
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US (2) | US6949832B2 (zh) |
JP (1) | JP4555540B2 (zh) |
CN (2) | CN101030568B (zh) |
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US7271489B2 (en) | 2003-10-15 | 2007-09-18 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
US6833320B2 (en) * | 2002-11-04 | 2004-12-21 | Intel Corporation | Removing sacrificial material by thermal decomposition |
JP2005038971A (ja) * | 2003-07-17 | 2005-02-10 | Ebara Corp | 半導体装置及びその製造方法 |
US7192495B1 (en) * | 2003-08-29 | 2007-03-20 | Micron Technology, Inc. | Intermediate anneal for metal deposition |
KR100558002B1 (ko) * | 2003-09-26 | 2006-03-06 | 삼성전자주식회사 | 선택적 전기도금 공정을 이용한 금속패턴 형성방법 |
KR100575618B1 (ko) * | 2003-10-07 | 2006-05-03 | 매그나칩 반도체 유한회사 | 구리막의 연마 방법 및 이를 이용한 구리막 배선의 형성방법 |
US7030016B2 (en) * | 2004-03-30 | 2006-04-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Post ECP multi-step anneal/H2 treatment to reduce film impurity |
JP2006019708A (ja) * | 2004-06-04 | 2006-01-19 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
CN100372098C (zh) * | 2004-06-04 | 2008-02-27 | 株式会社东芝 | 半导体器件的制造方法及半导体器件 |
JP4528035B2 (ja) * | 2004-06-18 | 2010-08-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4455214B2 (ja) * | 2004-08-05 | 2010-04-21 | Necエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
WO2006016678A1 (ja) | 2004-08-12 | 2006-02-16 | Nec Corporation | 半導体装置及びその製造方法 |
JP2006100698A (ja) | 2004-09-30 | 2006-04-13 | Toshiba Corp | 半導体装置の製造方法 |
US7189650B2 (en) | 2004-11-12 | 2007-03-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for copper film quality enhancement with two-step deposition |
CN100364057C (zh) * | 2004-11-24 | 2008-01-23 | 中芯国际集成电路制造(上海)有限公司 | 用于金属阻挡层与晶种集成的方法与系统 |
DE102005005325B4 (de) * | 2005-02-04 | 2011-12-15 | Adesto Technology Corp., Inc. | Verfahren zur Herstellung einer resistiv schaltenden nicht-flüchtigen Speicherzelle |
US7544606B2 (en) * | 2005-06-01 | 2009-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to implement stress free polishing |
US7795134B2 (en) * | 2005-06-28 | 2010-09-14 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
US20070032077A1 (en) * | 2005-08-08 | 2007-02-08 | Tzung-Yu Hung | Method of manufacturing metal plug and contact |
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JP2004040022A (ja) | 2004-02-05 |
CN1494129A (zh) | 2004-05-05 |
JP4555540B2 (ja) | 2010-10-06 |
US7476611B2 (en) | 2009-01-13 |
US6949832B2 (en) | 2005-09-27 |
CN101030568A (zh) | 2007-09-05 |
CN101030568B (zh) | 2010-05-26 |
US20040014312A1 (en) | 2004-01-22 |
US20050095847A1 (en) | 2005-05-05 |
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