CN1652310A - 半导体器件和制造方法以及电镀液 - Google Patents
半导体器件和制造方法以及电镀液 Download PDFInfo
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- CN1652310A CN1652310A CNA2004101049473A CN200410104947A CN1652310A CN 1652310 A CN1652310 A CN 1652310A CN A2004101049473 A CNA2004101049473 A CN A2004101049473A CN 200410104947 A CN200410104947 A CN 200410104947A CN 1652310 A CN1652310 A CN 1652310A
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- Prior art keywords
- copper
- film
- silver
- interconnection
- metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53233—Copper alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
样品 | Cu/Ag比(按重量) | 互连形成过程 | 成品率(相对值) |
B0 | 100/0 | 在硫酸铜电镀槽中电镀 | 100 |
b1 | 100/0 | 在硫酸铜电镀槽中电镀 | 42至60 |
b2 | 99.95/0.05 | 在含银的乙二胺电镀槽中电镀 | 60至81 |
b3 | 98/2 | 在含银的乙二胺电镀槽中电镀 | 88至100 |
样品 | Cu/Ag成分比(按重量) | 互连形成过程 | 最大磁滞误差(Mpa) | 再结晶温度(℃) |
c1 | 100/0 | 在硫酸铜电镀槽中电镀 | 210 | 150 |
c2 | 100/0 | 在乙二胺电镀槽中电镀 | 160 | 170 |
c3 | 99/1 | 在含银的乙二胺电镀槽中电镀(电镀液1) | 150 | 190 |
c4 | 98.5/1.5 | 在含银的乙二胺电镀槽中电镀(电镀液1) | 120 | 220 |
c5 | 97.5/2.5 | 在含银的乙二胺电镀槽中电镀(电镀液1) | 100 | 250 |
c6 | 91.7/8.3 | 在含银的乙二胺电镀槽中电镀(电镀液2) | 80 | 240 |
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002127702A JP4052868B2 (ja) | 2002-04-26 | 2002-04-26 | 半導体装置の製造方法 |
JP127702/2002 | 2002-04-26 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031224822A Division CN100483648C (zh) | 2002-04-26 | 2003-04-28 | 半导体器件和制造方法以及电镀液 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1652310A true CN1652310A (zh) | 2005-08-10 |
CN100459066C CN100459066C (zh) | 2009-02-04 |
Family
ID=29243868
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031224822A Expired - Fee Related CN100483648C (zh) | 2002-04-26 | 2003-04-28 | 半导体器件和制造方法以及电镀液 |
CNB2004101049488A Expired - Fee Related CN100456438C (zh) | 2002-04-26 | 2003-04-28 | 半导体器件和制造方法以及电镀液 |
CNB2004101049473A Expired - Fee Related CN100459066C (zh) | 2002-04-26 | 2003-04-28 | 半导体器件和制造方法以及电镀液 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031224822A Expired - Fee Related CN100483648C (zh) | 2002-04-26 | 2003-04-28 | 半导体器件和制造方法以及电镀液 |
CNB2004101049488A Expired - Fee Related CN100456438C (zh) | 2002-04-26 | 2003-04-28 | 半导体器件和制造方法以及电镀液 |
Country Status (5)
Country | Link |
---|---|
US (3) | US20030201536A1 (zh) |
JP (1) | JP4052868B2 (zh) |
CN (3) | CN100483648C (zh) |
DE (1) | DE10318921B4 (zh) |
TW (1) | TWI236076B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108728877A (zh) * | 2017-04-20 | 2018-11-02 | 上村工业株式会社 | 铜电镀浴和电镀铜镀覆膜 |
Families Citing this family (26)
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JP4052868B2 (ja) * | 2002-04-26 | 2008-02-27 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
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JP4177192B2 (ja) * | 2003-08-05 | 2008-11-05 | 株式会社日立ハイテクノロジーズ | プラズマエッチング装置およびプラズマエッチング方法 |
US20050035455A1 (en) * | 2003-08-14 | 2005-02-17 | Chenming Hu | Device with low-k dielectric in close proximity thereto and its method of fabrication |
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US7189292B2 (en) * | 2003-10-31 | 2007-03-13 | International Business Machines Corporation | Self-encapsulated silver alloys for interconnects |
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JP4266360B2 (ja) * | 2004-07-26 | 2009-05-20 | 株式会社神戸製鋼所 | 半導体装置のCu系配線形成方法 |
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JP4896850B2 (ja) * | 2006-11-28 | 2012-03-14 | 株式会社神戸製鋼所 | 半導体装置のCu配線およびその製造方法 |
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CN102097363A (zh) * | 2009-12-15 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | 金属互连方法 |
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CN104538346A (zh) * | 2014-12-26 | 2015-04-22 | 上海集成电路研发中心有限公司 | 一种铜互连结构的形成方法 |
US10329681B2 (en) | 2017-11-02 | 2019-06-25 | National Chung Shan Institute Of Science And Technology | Copper-silver dual-component metal electroplating solution and electroplating method for semiconductor wire |
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-
2002
- 2002-04-26 JP JP2002127702A patent/JP4052868B2/ja not_active Expired - Fee Related
-
2003
- 2003-04-22 TW TW092109427A patent/TWI236076B/zh not_active IP Right Cessation
- 2003-04-23 DE DE10318921.1A patent/DE10318921B4/de not_active Expired - Fee Related
- 2003-04-25 US US10/423,077 patent/US20030201536A1/en not_active Abandoned
- 2003-04-28 CN CNB031224822A patent/CN100483648C/zh not_active Expired - Fee Related
- 2003-04-28 CN CNB2004101049488A patent/CN100456438C/zh not_active Expired - Fee Related
- 2003-04-28 CN CNB2004101049473A patent/CN100459066C/zh not_active Expired - Fee Related
-
2005
- 2005-02-24 US US11/065,998 patent/US7259095B2/en not_active Expired - Fee Related
- 2005-05-09 US US11/124,804 patent/US7821135B2/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108728877A (zh) * | 2017-04-20 | 2018-11-02 | 上村工业株式会社 | 铜电镀浴和电镀铜镀覆膜 |
US11248305B2 (en) | 2017-04-20 | 2022-02-15 | C. Uyemura & Co., Ltd. | Copper electrolytic plating bath and copper electrolytic plating film |
CN108728877B (zh) * | 2017-04-20 | 2022-07-05 | 上村工业株式会社 | 铜电镀浴和电镀铜镀覆膜 |
Also Published As
Publication number | Publication date |
---|---|
JP4052868B2 (ja) | 2008-02-27 |
CN100459066C (zh) | 2009-02-04 |
US20030201536A1 (en) | 2003-10-30 |
US20050196959A1 (en) | 2005-09-08 |
US20050140013A1 (en) | 2005-06-30 |
TW200408020A (en) | 2004-05-16 |
DE10318921A1 (de) | 2003-11-13 |
CN1453834A (zh) | 2003-11-05 |
DE10318921B4 (de) | 2015-02-19 |
JP2003324148A (ja) | 2003-11-14 |
TWI236076B (en) | 2005-07-11 |
CN1652311A (zh) | 2005-08-10 |
CN100483648C (zh) | 2009-04-29 |
US7259095B2 (en) | 2007-08-21 |
CN100456438C (zh) | 2009-01-28 |
US7821135B2 (en) | 2010-10-26 |
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