CN100346466C - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN100346466C CN100346466C CNB2005100528174A CN200510052817A CN100346466C CN 100346466 C CN100346466 C CN 100346466C CN B2005100528174 A CNB2005100528174 A CN B2005100528174A CN 200510052817 A CN200510052817 A CN 200510052817A CN 100346466 C CN100346466 C CN 100346466C
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- Prior art keywords
- layer
- interconnection
- semiconductor device
- metal level
- dielectric constant
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- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000010949 copper Substances 0.000 claims abstract description 101
- 229910052751 metal Inorganic materials 0.000 claims abstract description 93
- 239000002184 metal Substances 0.000 claims abstract description 93
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052802 copper Inorganic materials 0.000 claims abstract description 53
- 125000006850 spacer group Chemical group 0.000 claims description 64
- 230000004888 barrier function Effects 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 238000005234 chemical deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract 5
- 239000011229 interlayer Substances 0.000 abstract 2
- 208000005189 Embolism Diseases 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 8
- 230000008602 contraction Effects 0.000 description 6
- 239000003550 marker Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004053620 | 2004-02-27 | ||
JP2004053620A JP2005244031A (ja) | 2004-02-27 | 2004-02-27 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1667812A CN1667812A (zh) | 2005-09-14 |
CN100346466C true CN100346466C (zh) | 2007-10-31 |
Family
ID=34879710
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100528174A Expired - Fee Related CN100346466C (zh) | 2004-02-27 | 2005-02-28 | 半导体器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7388291B2 (zh) |
JP (1) | JP2005244031A (zh) |
CN (1) | CN100346466C (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7361584B2 (en) * | 2004-11-04 | 2008-04-22 | International Business Machines Corporation | Detection of residual liner materials after polishing in damascene process |
US7811935B2 (en) * | 2006-03-07 | 2010-10-12 | Micron Technology, Inc. | Isolation regions and their formation |
KR100881620B1 (ko) | 2007-01-29 | 2009-02-04 | 삼성전자주식회사 | 반도체 장치 및 그 형성 방법 |
US20110101531A1 (en) * | 2008-05-30 | 2011-05-05 | Nxp B.V. | Thermo-mechanical stress in semiconductor wafers |
CN102543671B (zh) * | 2010-12-08 | 2015-02-11 | 中国科学院微电子研究所 | 半导体晶片的制造方法 |
JP5673627B2 (ja) | 2012-08-03 | 2015-02-18 | トヨタ自動車株式会社 | 半導体装置及びその製造方法 |
US9099442B2 (en) * | 2013-08-05 | 2015-08-04 | Micron Technology, Inc. | Conductive interconnect structures incorporating negative thermal expansion materials and associated systems, devices, and methods |
CN106158735B (zh) * | 2015-04-21 | 2019-02-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件制作方法、半导体器件及电子装置 |
US10304772B2 (en) | 2017-05-19 | 2019-05-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure with resistive element |
US10366919B2 (en) * | 2017-09-20 | 2019-07-30 | Globalfoundries Inc. | Fully aligned via in ground rule region |
US10515852B2 (en) * | 2017-11-09 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of semiconductor device with resistive element |
CN111293074B (zh) * | 2018-12-10 | 2022-12-02 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
CN115084000A (zh) * | 2021-03-10 | 2022-09-20 | 长鑫存储技术有限公司 | 半导体结构及半导体结构的制作方法 |
Citations (8)
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US5793112A (en) * | 1996-04-11 | 1998-08-11 | Mitsubishi Denki Kabushiki Kaisha | Multilevel embedded wiring system |
US6157081A (en) * | 1999-03-10 | 2000-12-05 | Advanced Micro Devices, Inc. | High-reliability damascene interconnect formation for semiconductor fabrication |
US6297557B1 (en) * | 1997-07-25 | 2001-10-02 | Philips Electronics North America Corp. | Reliable aluminum interconnect via structures |
US6323555B1 (en) * | 1998-01-28 | 2001-11-27 | Interuniversitiar Microelektronica Centrum (Imec Vzw) | Metallization structure on a fluorine-containing dielectric and a method for fabrication thereof |
CN1369112A (zh) * | 1999-06-09 | 2002-09-11 | 联合讯号公司 | 集成电路中自调准Cu扩散阻挡层的制造方法 |
JP2003051500A (ja) * | 2001-08-07 | 2003-02-21 | Toshiba Corp | 半導体装置及びその製造方法 |
US6610592B1 (en) * | 2000-04-24 | 2003-08-26 | Taiwan Semiconductor Manufacturing Company | Method for integrating low-K materials in semiconductor fabrication |
CN1466190A (zh) * | 2002-06-29 | 2004-01-07 | ����ʿ�뵼������˾ | 形成铜金属线的方法 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
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US6180523B1 (en) * | 1998-10-13 | 2001-01-30 | Industrial Technology Research Institute | Copper metallization of USLI by electroless process |
US6214728B1 (en) * | 1998-11-20 | 2001-04-10 | Chartered Semiconductor Manufacturing, Ltd. | Method to encapsulate copper plug for interconnect metallization |
US6100195A (en) * | 1998-12-28 | 2000-08-08 | Chartered Semiconductor Manu. Ltd. | Passivation of copper interconnect surfaces with a passivating metal layer |
JP2001176965A (ja) | 1999-12-20 | 2001-06-29 | Nec Corp | 半導体装置及びその製造方法 |
US6368967B1 (en) * | 2000-05-04 | 2002-04-09 | Advanced Micro Devices, Inc. | Method to control mechanical stress of copper interconnect line using post-plating copper anneal |
US6376353B1 (en) * | 2000-07-03 | 2002-04-23 | Chartered Semiconductor Manufacturing Ltd. | Aluminum and copper bimetallic bond pad scheme for copper damascene interconnects |
ATE323076T1 (de) * | 2000-08-08 | 2006-04-15 | Ortho Mcneil Pharm Inc | Bicyclische verbindungen als h3 rezeptor liganden |
US6710450B2 (en) * | 2001-02-28 | 2004-03-23 | International Business Machines Corporation | Interconnect structure with precise conductor resistance and method to form same |
US6677680B2 (en) * | 2001-02-28 | 2004-01-13 | International Business Machines Corporation | Hybrid low-k interconnect structure comprised of 2 spin-on dielectric materials |
US6640592B2 (en) * | 2001-05-08 | 2003-11-04 | Southco, Inc. | Key operated latch with combined rotational and translational latching action |
US6537913B2 (en) * | 2001-06-29 | 2003-03-25 | Intel Corporation | Method of making a semiconductor device with aluminum capped copper interconnect pads |
US6806526B2 (en) * | 2001-08-13 | 2004-10-19 | Advanced Micro Devices, Inc. | Memory device |
KR100413828B1 (ko) * | 2001-12-13 | 2004-01-03 | 삼성전자주식회사 | 반도체 장치 및 그 형성방법 |
KR20020037326A (ko) | 2002-04-25 | 2002-05-18 | 박사룡 | 골프퍼팅용 고글 |
US6900488B1 (en) * | 2002-10-31 | 2005-05-31 | Advanced Micro Devices, Inc. | Multi-cell organic memory element and methods of operating and fabricating |
US6753247B1 (en) * | 2002-10-31 | 2004-06-22 | Advanced Micro Devices, Inc. | Method(s) facilitating formation of memory cell(s) and patterned conductive |
US6870183B2 (en) * | 2002-11-04 | 2005-03-22 | Advanced Micro Devices, Inc. | Stacked organic memory devices and methods of operating and fabricating |
US6773954B1 (en) * | 2002-12-05 | 2004-08-10 | Advanced Micro Devices, Inc. | Methods of forming passive layers in organic memory cells |
US6746971B1 (en) * | 2002-12-05 | 2004-06-08 | Advanced Micro Devices, Inc. | Method of forming copper sulfide for memory cell |
US6686263B1 (en) * | 2002-12-09 | 2004-02-03 | Advanced Micro Devices, Inc. | Selective formation of top memory electrode by electroless formation of conductive materials |
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US6806579B2 (en) * | 2003-02-11 | 2004-10-19 | Infineon Technologies Ag | Robust via structure and method |
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US6977218B2 (en) * | 2003-07-17 | 2005-12-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for fabricating copper interconnects |
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JP4963349B2 (ja) * | 2005-01-14 | 2012-06-27 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US8747960B2 (en) * | 2005-08-31 | 2014-06-10 | Lam Research Corporation | Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide |
US8771804B2 (en) * | 2005-08-31 | 2014-07-08 | Lam Research Corporation | Processes and systems for engineering a copper surface for selective metal deposition |
-
2004
- 2004-02-27 JP JP2004053620A patent/JP2005244031A/ja active Pending
-
2005
- 2005-02-24 US US11/063,565 patent/US7388291B2/en not_active Expired - Fee Related
- 2005-02-28 CN CNB2005100528174A patent/CN100346466C/zh not_active Expired - Fee Related
-
2008
- 2008-04-29 US US12/111,352 patent/US20080203572A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5793112A (en) * | 1996-04-11 | 1998-08-11 | Mitsubishi Denki Kabushiki Kaisha | Multilevel embedded wiring system |
US6297557B1 (en) * | 1997-07-25 | 2001-10-02 | Philips Electronics North America Corp. | Reliable aluminum interconnect via structures |
US6323555B1 (en) * | 1998-01-28 | 2001-11-27 | Interuniversitiar Microelektronica Centrum (Imec Vzw) | Metallization structure on a fluorine-containing dielectric and a method for fabrication thereof |
US6157081A (en) * | 1999-03-10 | 2000-12-05 | Advanced Micro Devices, Inc. | High-reliability damascene interconnect formation for semiconductor fabrication |
CN1369112A (zh) * | 1999-06-09 | 2002-09-11 | 联合讯号公司 | 集成电路中自调准Cu扩散阻挡层的制造方法 |
US6610592B1 (en) * | 2000-04-24 | 2003-08-26 | Taiwan Semiconductor Manufacturing Company | Method for integrating low-K materials in semiconductor fabrication |
JP2003051500A (ja) * | 2001-08-07 | 2003-02-21 | Toshiba Corp | 半導体装置及びその製造方法 |
CN1466190A (zh) * | 2002-06-29 | 2004-01-07 | ����ʿ�뵼������˾ | 形成铜金属线的方法 |
Also Published As
Publication number | Publication date |
---|---|
US7388291B2 (en) | 2008-06-17 |
US20050189654A1 (en) | 2005-09-01 |
JP2005244031A (ja) | 2005-09-08 |
CN1667812A (zh) | 2005-09-14 |
US20080203572A1 (en) | 2008-08-28 |
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