CN1288947C - 多层布线基片及其制造方法 - Google Patents
多层布线基片及其制造方法 Download PDFInfo
- Publication number
- CN1288947C CN1288947C CNB031490263A CN03149026A CN1288947C CN 1288947 C CN1288947 C CN 1288947C CN B031490263 A CNB031490263 A CN B031490263A CN 03149026 A CN03149026 A CN 03149026A CN 1288947 C CN1288947 C CN 1288947C
- Authority
- CN
- China
- Prior art keywords
- insulating barrier
- bed course
- metal bed
- type surface
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims abstract description 75
- 239000002184 metal Substances 0.000 claims abstract description 268
- 229910052751 metal Inorganic materials 0.000 claims abstract description 268
- 230000004888 barrier function Effects 0.000 claims description 229
- 238000003475 lamination Methods 0.000 claims description 57
- 239000010410 layer Substances 0.000 claims description 50
- 238000004519 manufacturing process Methods 0.000 claims description 43
- 238000005530 etching Methods 0.000 claims description 37
- 238000012545 processing Methods 0.000 claims description 24
- 239000011241 protective layer Substances 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 14
- 239000012212 insulator Substances 0.000 abstract 5
- 239000000463 material Substances 0.000 description 20
- 229910000679 solder Inorganic materials 0.000 description 14
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- 208000037656 Respiratory Sounds Diseases 0.000 description 10
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- 238000007747 plating Methods 0.000 description 7
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- 239000007788 liquid Substances 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 229910001374 Invar Inorganic materials 0.000 description 4
- 229910018104 Ni-P Inorganic materials 0.000 description 4
- 229910018536 Ni—P Inorganic materials 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 229910000863 Ferronickel Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
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- 150000002118 epoxides Chemical class 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4682—Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2018—Presence of a frame in a printed circuit or printed circuit assembly
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0147—Carriers and holders
- H05K2203/0152—Temporary metallic carrier, e.g. for transferring material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0376—Etching temporary metallic carrier substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
- H05K3/0035—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material of blind holes, i.e. having a metal layer at the bottom
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP270225/2002 | 2002-09-17 | ||
JP2002270225A JP3983146B2 (ja) | 2002-09-17 | 2002-09-17 | 多層配線基板の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006100937344A Division CN1870259A (zh) | 2002-09-17 | 2003-06-20 | 多层布线基片 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1484482A CN1484482A (zh) | 2004-03-24 |
CN1288947C true CN1288947C (zh) | 2006-12-06 |
Family
ID=31986845
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006100937344A Pending CN1870259A (zh) | 2002-09-17 | 2003-06-20 | 多层布线基片 |
CNB031490263A Expired - Fee Related CN1288947C (zh) | 2002-09-17 | 2003-06-20 | 多层布线基片及其制造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006100937344A Pending CN1870259A (zh) | 2002-09-17 | 2003-06-20 | 多层布线基片 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7060604B2 (zh) |
JP (1) | JP3983146B2 (zh) |
KR (1) | KR100516143B1 (zh) |
CN (2) | CN1870259A (zh) |
TW (1) | TWI298006B (zh) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4267903B2 (ja) * | 2002-11-29 | 2009-05-27 | 日本特殊陶業株式会社 | 多層配線基板の製造方法 |
JP4336605B2 (ja) * | 2004-04-09 | 2009-09-30 | 日本特殊陶業株式会社 | 配線基板の製造方法 |
JP4342366B2 (ja) * | 2004-04-09 | 2009-10-14 | 日本特殊陶業株式会社 | 配線基板の製造方法 |
JP4342367B2 (ja) * | 2004-04-09 | 2009-10-14 | 日本特殊陶業株式会社 | 配線基板の製造方法 |
JP4335075B2 (ja) * | 2004-06-08 | 2009-09-30 | 株式会社伸光製作所 | 多層プリント配線基板およびその製造方法 |
JP3961537B2 (ja) * | 2004-07-07 | 2007-08-22 | 日本電気株式会社 | 半導体搭載用配線基板の製造方法、及び半導体パッケージの製造方法 |
US20090046441A1 (en) * | 2006-01-06 | 2009-02-19 | Nec Corporation | Wiring board for mounting semiconductor device, manufacturing method of the same, and wiring board assembly |
US7592710B2 (en) * | 2006-03-03 | 2009-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond pad structure for wire bonding |
JP4171499B2 (ja) | 2006-04-10 | 2008-10-22 | 日立電線株式会社 | 電子装置用基板およびその製造方法、並びに電子装置およびその製造方法 |
TWI296843B (en) * | 2006-04-19 | 2008-05-11 | Phoenix Prec Technology Corp | A method for manufacturing a coreless package substrate |
TWI295842B (en) * | 2006-04-19 | 2008-04-11 | Phoenix Prec Technology Corp | A method for manufacturing a coreless package substrate |
JP4930689B2 (ja) * | 2006-04-28 | 2012-05-16 | 凸版印刷株式会社 | 多層半導体パッケージの製造方法 |
JP4431123B2 (ja) | 2006-05-22 | 2010-03-10 | 日立電線株式会社 | 電子装置用基板およびその製造方法、並びに電子装置およびその製造方法 |
KR100751663B1 (ko) | 2006-09-06 | 2007-08-23 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
US7608538B2 (en) | 2007-01-05 | 2009-10-27 | International Business Machines Corporation | Formation of vertical devices by electroplating |
US20080188037A1 (en) * | 2007-02-05 | 2008-08-07 | Bridge Semiconductor Corporation | Method of manufacturing semiconductor chip assembly with sacrificial metal-based core carrier |
JP4983288B2 (ja) * | 2007-02-14 | 2012-07-25 | 富士通株式会社 | 多層配線基板およびその製造方法 |
TWI360205B (en) * | 2007-06-20 | 2012-03-11 | Princo Corp | Multi-layer substrate and manufacture method there |
JP5096855B2 (ja) * | 2007-09-27 | 2012-12-12 | 新光電気工業株式会社 | 配線基板の製造方法及び配線基板 |
KR100923883B1 (ko) * | 2008-04-25 | 2009-10-28 | 대덕전자 주식회사 | 강도가 부가된 코어 리스 인쇄회로기판 제조 방법 |
CN101677067B (zh) * | 2008-09-19 | 2012-05-09 | 钰桥半导体股份有限公司 | 铜核层多层封装基板的制作方法 |
TWI475932B (zh) * | 2008-09-29 | 2015-03-01 | Ngk Spark Plug Co | 帶有補強材之配線基板 |
US8581423B2 (en) | 2008-11-17 | 2013-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Double solid metal pad with reduced area |
JP2011138868A (ja) * | 2009-12-28 | 2011-07-14 | Ngk Spark Plug Co Ltd | 多層配線基板 |
JP2011138869A (ja) * | 2009-12-28 | 2011-07-14 | Ngk Spark Plug Co Ltd | 多層配線基板の製造方法及び多層配線基板 |
JP5566720B2 (ja) * | 2010-02-16 | 2014-08-06 | 日本特殊陶業株式会社 | 多層配線基板及びその製造方法 |
JP5610285B2 (ja) * | 2010-09-29 | 2014-10-22 | 本田技研工業株式会社 | 配線構造体及びそれを備えたジョイントボックス |
US9807874B2 (en) * | 2011-09-30 | 2017-10-31 | Kyocera Corporation | Wiring substrate, component embedded substrate, and package structure |
CN103582319B (zh) * | 2012-07-19 | 2016-10-19 | 景硕科技股份有限公司 | 线路积层板结构的制作方法 |
US9245846B2 (en) * | 2014-05-06 | 2016-01-26 | International Business Machines Corporation | Chip with programmable shelf life |
TWI545997B (zh) * | 2014-07-31 | 2016-08-11 | 恆勁科技股份有限公司 | 中介基板及其製法 |
CN105722299B (zh) * | 2014-12-03 | 2018-08-31 | 恒劲科技股份有限公司 | 中介基板及其制法 |
US10455708B2 (en) | 2015-06-29 | 2019-10-22 | Samsung Electro-Mechanics Co., Ltd. | Multilayered substrate and method for manufacturing the same |
US9832866B2 (en) * | 2015-06-29 | 2017-11-28 | Samsung Electro-Mechanics Co., Ltd. | Multilayered substrate and method of manufacturing the same |
CN104966709B (zh) | 2015-07-29 | 2017-11-03 | 恒劲科技股份有限公司 | 封装基板及其制作方法 |
US10361121B2 (en) * | 2016-05-13 | 2019-07-23 | Intel Corporation | Aluminum oxide for thermal management or adhesion |
US10002839B2 (en) * | 2016-08-29 | 2018-06-19 | Via Alliance Semiconductor Co., Ltd. | Electronic structure, and electronic structure array |
US9905519B1 (en) * | 2016-08-29 | 2018-02-27 | Via Alliance Semiconductor Co., Ltd. | Electronic structure process |
JP6693850B2 (ja) * | 2016-09-30 | 2020-05-13 | 新光電気工業株式会社 | キャリア基材付き配線基板、キャリア基材付き配線基板の製造方法 |
CN110024496B (zh) * | 2016-12-22 | 2022-04-29 | 三井金属矿业株式会社 | 多层电路板的制造方法 |
TWI719241B (zh) | 2017-08-18 | 2021-02-21 | 景碩科技股份有限公司 | 可做電性測試的多層電路板及其製法 |
TWI712344B (zh) * | 2017-08-18 | 2020-12-01 | 景碩科技股份有限公司 | 可做電性測試的多層電路板及其製法 |
US11640934B2 (en) * | 2018-03-30 | 2023-05-02 | Intel Corporation | Lithographically defined vertical interconnect access (VIA) in dielectric pockets in a package substrate |
JP7187821B2 (ja) * | 2018-05-29 | 2022-12-13 | Tdk株式会社 | プリント配線板およびその製造方法 |
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JPS63229897A (ja) | 1987-03-19 | 1988-09-26 | 古河電気工業株式会社 | リジツド型多層プリント回路板の製造方法 |
JPH0575255A (ja) * | 1991-09-11 | 1993-03-26 | Hitachi Ltd | 混成基板とこれを搭載する回路モジユールおよびその製造方法 |
US5404044A (en) * | 1992-09-29 | 1995-04-04 | International Business Machines Corporation | Parallel process interposer (PPI) |
US5527741A (en) * | 1994-10-11 | 1996-06-18 | Martin Marietta Corporation | Fabrication and structures of circuit modules with flexible interconnect layers |
US5918153A (en) * | 1996-09-18 | 1999-06-29 | Sandia Corporation | High density electronic circuit and process for making |
JP3236785B2 (ja) * | 1996-09-27 | 2001-12-10 | 京セラ株式会社 | 積層セラミック基板の製造方法 |
JPH10209324A (ja) * | 1997-01-23 | 1998-08-07 | Kyocera Corp | 配線基板 |
JP3756655B2 (ja) | 1998-02-09 | 2006-03-15 | 日本特殊陶業株式会社 | ビルドアップ多層基板の製造方法 |
JPH11289025A (ja) | 1998-04-01 | 1999-10-19 | Ngk Spark Plug Co Ltd | ビルドアップ多層配線基板 |
JP3635219B2 (ja) * | 1999-03-11 | 2005-04-06 | 新光電気工業株式会社 | 半導体装置用多層基板及びその製造方法 |
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JP3213291B2 (ja) * | 1999-06-29 | 2001-10-02 | ソニーケミカル株式会社 | 多層基板及び半導体装置 |
JP3973340B2 (ja) | 1999-10-05 | 2007-09-12 | Necエレクトロニクス株式会社 | 半導体装置、配線基板、及び、それらの製造方法 |
JP2002009444A (ja) * | 2000-06-22 | 2002-01-11 | Hitachi Ltd | セラミック多層配線基板の構造 |
US6841862B2 (en) * | 2000-06-30 | 2005-01-11 | Nec Corporation | Semiconductor package board using a metal base |
JP4427874B2 (ja) | 2000-07-06 | 2010-03-10 | 住友ベークライト株式会社 | 多層配線板の製造方法および多層配線板 |
JP2003209366A (ja) * | 2002-01-15 | 2003-07-25 | Sony Corp | フレキシブル多層配線基板およびその製造方法 |
-
2002
- 2002-09-17 JP JP2002270225A patent/JP3983146B2/ja not_active Expired - Fee Related
-
2003
- 2003-06-05 US US10/454,530 patent/US7060604B2/en not_active Expired - Fee Related
- 2003-06-18 TW TW092116489A patent/TWI298006B/zh not_active IP Right Cessation
- 2003-06-20 KR KR10-2003-0040239A patent/KR100516143B1/ko not_active IP Right Cessation
- 2003-06-20 CN CNA2006100937344A patent/CN1870259A/zh active Pending
- 2003-06-20 CN CNB031490263A patent/CN1288947C/zh not_active Expired - Fee Related
-
2006
- 2006-04-26 US US11/411,020 patent/US7233066B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1870259A (zh) | 2006-11-29 |
US20060189125A1 (en) | 2006-08-24 |
JP2004111536A (ja) | 2004-04-08 |
KR100516143B1 (ko) | 2005-09-22 |
TW200410613A (en) | 2004-06-16 |
CN1484482A (zh) | 2004-03-24 |
US20040053489A1 (en) | 2004-03-18 |
US7060604B2 (en) | 2006-06-13 |
US7233066B2 (en) | 2007-06-19 |
TWI298006B (en) | 2008-06-11 |
KR20040025538A (ko) | 2004-03-24 |
JP3983146B2 (ja) | 2007-09-26 |
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