CN1203696A - 半导体晶片的加工方法和ic卡的制造方法以及载体 - Google Patents
半导体晶片的加工方法和ic卡的制造方法以及载体 Download PDFInfo
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- CN1203696A CN1203696A CN96198789A CN96198789A CN1203696A CN 1203696 A CN1203696 A CN 1203696A CN 96198789 A CN96198789 A CN 96198789A CN 96198789 A CN96198789 A CN 96198789A CN 1203696 A CN1203696 A CN 1203696A
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Abstract
本发明的方法是,在操作性良好的基础上把半导体晶片加工成薄型,而不会发生破裂和翘曲。用准备由基体材料1a和已设置于该基体材料1a的单面上的吸附盘1b构成载体的第1工序;使未形成电路器件的背面朝向与上述载体1相反方向,把半导体晶片2粘附于上述载体1上形成晶片复合体10的第2工序;使晶片复合体10的半导体晶片2一侧朝向上方,把持载体1,在半导体晶片2的背面旋转涂布腐蚀液,对该半导体晶片2施行薄型加工的第3工序,对半导体晶片进行薄型加工。
Description
本发明涉及一种半导体晶片的加工技术,特别是,涉及把半导体晶片的厚度极薄地加工成100μm以下之际处理半导体晶片的有效技术。
目前,例如象在IC卡中使用的半导体装置那样,在高密度、小型,同时要求薄型化的半导体装置中,通常与TQFP(Thin Quad Flat Package-薄形扁平封装)或TSOP(Thin Small Outline Package-薄小型封装)等比较,已使用着厚度较薄的封装。而且,在制造这种封装中,必须把半导体晶片加工得特别薄。用作把半导体晶片减薄的技术,已知有研磨法、化学腐蚀法和抛光法三种技术,例如,象日经BP公司发行,刊载于“实践讲座,VLSI封装技术(下)”(1993年5月31日发行,P12~P14页)的这种技术。如该刊物中所述,研磨法是用金刚砂磨削半导体晶片的背面的技术、腐蚀法是边高速旋转半导体晶片边用以氢氟酸和硝酸为主的混合酸腐蚀其背面的技术、而抛光法是用磨料抛光半导体晶片背面的技术。
然而,在研磨和抛光的薄型加工中,虽然可以把一般厚度本身大约为625μm(或725μm)的半导体晶片加工成300μm左右,但是要制成,例如100μm以下这样的水平,即使给予足够的注意,在从装置中取出之际,半导体晶片也有破裂的危险。或者,即使不至破裂,也由于半导体晶片表面的钝化膜的应力和半导体晶片的内部应力而明显出现翘曲,并在划片等以后工艺过程中产生加工上的问题。除此之外,还难以在大于12英寸的大直径半导体晶片上得到规定水平平整和均匀的晶片。
另外,在腐蚀的薄型加工中,为了使之高速旋转,因多处受保持半导体晶片周边部分的支杆过大的应力作用,半导体晶片会破损。还有,与划片等的情况同样,起因于内部应力的翘曲也成为问题。
为了消除上述这样的问题,本发明人想到了重复种种研究,即在把半导体晶片用带固定到哪一种支承基板上的状态下进行加工的研究。但是,由于用通常的加工带在每次处理半导体晶片后,该带也就不可回收,所以留有使成本增大的新问题。
在这里,本发明就是为了解决以上的技术问题,其目的在于提供一种可以薄型加工半导体晶片而不发生破裂的半导体晶片加工技术。
本发明的另一个目的在于提供一种在容易操作的基础上可以薄型加工半导体晶片的技术。
本发明的再一个目的在于提供一种可以薄型加工半导体晶片而不发生翘曲的技术。
本发明的又一个目的在于提供一种可以在低成本的基础上薄型加工半导体晶片的技术。
本发明上述的和其它的目的及新颖的特征,从本说明书的叙述和附图,将变得清楚起来。
在本申请公开的发明之中,简单地说明典型性内容的概要如下。
也就是,本发明的半导体晶片的加工方法是,以具有:准备由基体材料和已设置于该基体材料的单面上的粘附构件构成的板状或薄片状载体的第1工序;使未形成电路器件的背面朝向与载体成相反方向,把半导体晶片粘附于载体上形成晶片复合体的第2工序;使该晶片复合体的半导体晶片侧面朝向上方,保持晶片复合体,在半导体晶片的背面旋转涂布腐蚀液,对该半导体晶片进行薄型加工的第3工序为其特征的方法。
在该半导体晶片的加工方法中,规定半导体晶片为比载体直径还大,形成晶片复合体要使半导体晶片的整个周边部分从载体伸了出去,在第3工序中,可以对晶片复合体从下方吹气体,对半导体晶片进行薄型加工。还有,可以规定半导体晶片为与载体同一直径或比载体还小的直径,则形成晶片复合体使得半导体晶片的周边部分不会从载体伸出。
在用第3工序薄型加工了半导体晶片之后,可以设有把其背面粘贴于划片板上进行剥离载体的第4工序;及把划片板上的半导体晶片切割为各个半导体芯片的第5工序。
本发明的半导体晶片加工方法是,以具有:在已作成电路器件的主表面上准备形成了钝化膜的半导体晶片的第1工序;准备由基体材料和已设置于该基体材料的单面上的粘附构件构成的板状或薄片状的第2工序;使未形成电路器件的背面朝向与载体成相反方向,把半导体晶片粘附于载体上形成晶片复合体的第3工序;使该晶片复合体的半导体晶片侧面朝向上方,保持晶片复合体,在半导体晶片的背面旋转涂布腐蚀液,对该半导体晶片进行薄型加工的第4工序为其特征的方法。在这样的情况下,在第4工序对半导体晶片进行薄型加工之后,可以设有把其背面粘贴于划片板上的载体进行剥离的第5工序;及把划片板上的半导体晶片切割为各个半导体芯片的第6工序。
本发明的IC卡的制造方法是,以具有:准备由基体材料和已设置于该基体材料的单面上的粘附构件构成的板状或薄片状的第1工序;使未形成电路器件的背面朝向与载体成相反方向,把半导体晶片粘附于载体上形成晶片复合体的第2工序;使该晶片复合体的半导体晶片侧面朝向上方,保持晶片复合体,在半导体晶片的背面旋转涂布腐蚀液,对该半导体晶片进行薄型加工的第3工序;薄型加工进行后把半导体晶片背面粘贴于划片板上的载体进行剥离的第4工序;及把划片板上的半导体晶片切割为各个半导体芯片的第5工序;使其与划片板粘附力减少或丧失的第6工序;把半导体芯片安装到卡式基板的芯片搭载位置的第7工序;及用已安装了半导体芯片的卡式基板制成IC卡的第8工序为其特征的方法。
本发明的IC卡的制造方法是,以具有:在已作成电路器件的主表面上准备形成了钝化膜的半导体晶片的第1工序;准备由基体材料和已设置于该基体材料的单面上的粘附构件构成的板状或薄片状的第2工序;使未形成电路器件的背面朝向与载体成相反方向,把半导体晶片粘附于载体上形成晶片复合体的第3工序;使该晶片复合体的半导体晶片侧面朝向上方,保持晶片复合体,在半导体晶片的背面旋转涂布腐蚀液,对该半导体晶片进行薄型加工的第4工序;薄型加工进行后的半导体晶片背面粘贴于划片板上的载体进行剥离的第5工序;及把划片板上的半导体晶片切割为各个半导体芯片的第6工序;使其与划片板粘附力减少或丧失的第7工序;把半导体芯片安装到卡式基板的芯片搭载位置的第8工序;及用已安装了半导体芯片的卡式基板制成IC卡的第9工序为其特征的方法。
在本发明的IC卡的制造方法中,当在半导体晶片的芯片电极上形成了凸点电极时,可以把基体材料上使设的粘附构件厚度作成大于粘附构件的高度。还有,在第7工序中,也可以把半导体芯片从划片板直接安装到卡式基板上。
并且,本发明的载体应该是使用于这样的半导体晶片的加工方法,粘附构件是作成为用减压空间吸附半导体晶片的自由弹性变形的吸附衬垫。在该载体中,可以把吸附衬垫作成能吸附半导体晶片的单面的几乎全区域的大小。还有,也可以沿半导体晶片的周边形状形成环状。进而,也可以作成为,在基体材料的单面全区域范围设有多个,用多个吸附衬垫在多处吸附并保持半导体晶片的方式。
并且,本发明的载体应该是使用于上述半导体晶片的加工方法,粘附构件应该作成为,被形成在基体材料上,并与连接到真空泵的真空孔连通,负压吸引半导体晶片的一侧面,在大气压下,可从该半导体晶片上剥离的吸附沟。
本发明的载体应该是使用于上述半导体晶片的加工方法,粘附构件应该作成为,在基体材料的单面上进行开口且形成多个,并与连接到真空泵的真空孔连通,负压吸引半导体晶片的一侧面,在大气压下,可从该半导体晶片上剥离的吸附沟。
本发明的载体应该是使用于上述半导体晶片的加工方法,粘附构件应该作成为,被设置在基体材料的单面上,并用与连接到真空泵的真空孔连通的多个细孔,负压吸引半导体晶片的一侧面,在大气压下,可从该半导体晶片上剥离的多孔质体。
本发明的载体应该是使用于上述半导体晶片的加工方法,粘附构件应该,由与基体材料为同一面形成多个凹部的剥离部分和位于该剥离部分与半导体晶片之间使半导体晶片与基体材料粘附的已凝胶化的硅酮构成,作成为使剥离部分的周围成为负压,硅酮陷入到凹部中,并可从该半导体晶片上剥离的粘附板部分。该载体的剥离部分可以部作成网状或形成于基体材料上的凹凸。
本发明的载体应该是使用于上述半导体晶片的加工方法,基体材料应该是由具有透明性的材料构成,粘附材料可用通过基体材料照射紫外线使粘附力减少或丧失且从半导体晶片上剥离的UV硬化型粘合剂。
本发明的载体应该是使用于上述半导体晶片的加工方法,粘附材料应该为随温度变化使粘附力减少或丧失且从半导体晶片上剥离的温度活性型粘合剂。在本载体中,温度活性型粘合剂可以为在低温下,粘附力减少或丧失的粘合剂。
本发明的载体应该是使用于上述半导体晶片的加工方法,粘附材料应该是,以表面力使半导体晶片紧贴于基体材料的一侧面上,可用超声波从半导体晶片上剥离的液体。
用于此载体的基体材料由具有耐酸性的材料,例如压紧固化纤维状氟树脂之类构成的材料是理想的。
倘采用上述方法,由于做到了使半导体晶片粘附于载体上且形成晶片复合体,在这样的晶片复合体的状态下进行装卸并对半导体晶片进行薄型加工,所以即使不给予格外注意,也不会发生破裂。另外,载体补偿因薄型化而引起的半导体晶片的刚性强度下降,阻止钝化膜释放应力,也就不会在半导体晶片上发生翘曲。因此,可以稳定地把半导体晶片加工成超薄型。
并且,由于可以与具有薄型化前厚度的半导体晶片同样进行装卸,即使不给予格外注意,在半导体晶片上也不会发生破裂,且可达到在薄型加工上谋求操作容易。
还有,由于要继续保持晶片复合体之中的载体部分,应力不加到半导体晶片上,故当然地排除发生翘曲,可以在良好的精加工质量的原料上对半导体晶片进行薄型加工。
倘作成用吸附衬垫把半导体晶片固定在基体材料上,则由于可以使用不需要工艺,同时把载体作成简单构造,所以可以在低成本的原料上对半导体晶片进行薄型加工。
倘作成为使半导体晶片外伸而形成晶片复合体,对该晶片复合体边从其下方吹入气体边旋转涂布腐蚀液,则确实地可以防止腐蚀液绕到主表面上,当然地排除对已形成电路器件的损坏。
倘作成晶片复合,使得体半导体晶片的周边部分不会从载体伸出,由于腐蚀液液不会绕向主表面,就不需要向晶片复合体吹送气体。另外,由于厚度薄的半导体晶片没有从载体向外伸出,所以容易处理晶片复合体。进而,由于半导体晶片的整个主表面覆以载体而与外部气氛隔断,所以即使用浸渍方式也可以腐蚀半导体晶片的背面。
这样一来,若使用切割后的薄型化的半导体晶片的半导体芯片组装IC卡,就可以进一步推进IC卡的薄型化。
倘把设于基体材料的粘附构件的厚度作成为大于在半导体晶片上形成的凸点电极,则整个载体紧贴于半导体晶片上,可以防止两者之间的剥离。并且,要使半导体芯片直接从划片板上安装到卡式基板上的话,就省略移动半导体芯片换变所花费的工夫,提高通过量。
由于作成把半导体晶片真空吸附于载体的构造,用剥离部分和粘附板部分构成粘附构件或者用UV硬化型粘合剂、温度活性型粘合剂构成粘附构件的构造,故可以简单地进行薄型加工后的剥离操作。还有,总是使半导体晶片沿基体材料保持平坦,因而可以有效地抑制半导体晶片的翘曲。
如使用可逆性的温度活性型粘合剂,就可以重复使用载体,因而可以经济地大量生产薄型半导体晶片。
采用压紧固化纤维状的氟树脂作为基体材料的办法,把具有耐酸性这一特征的氟树脂作为基体材料,可以使用与之粘附性不好的温度活性型粘合剂等各种的粘合剂。
图1是表示用于本发明一实施例的半导体晶片薄型加工中的载体平面图;
图2是沿图1的II-II线的剖面图;
图3是表示图1载体的半导体晶片加工顺序的一部分说明图;
图4是与图3连续表示图1载体的半导体晶片加工顺序的一部分说明图;
图5是用于本发明半导体晶片薄型加工的腐蚀装置的概略图;
图6是与图4连续表示图1载体的半导体晶片加工顺序的一部分说明图;
图7是与图6连续表示图1载体的半导体晶片加工顺序的一部分说明图;
图8是与图7连续表示图1载体的半导体晶片加工顺序的一部分说明图;
图9是与图8连续表示图1载体的半导体晶片加工顺序的一部分说明图;
图10是与图9连续表示图1载体的半导体晶片加工顺序的一部分说明图;
图11是表示用于本发明另一实施例的半导体晶片薄型加工中的载体平面图;
图12是沿图11的XII-XII线的剖面图;
图13是表示用于本发明又一实施例的半导体晶片薄型加工中的载体平面图;
图14是沿图13的XIV-XIV线的剖面图;
图15是表示用于本发明又一实施例的半导体晶片薄型加工中的载体平面图;
图16是沿图15的XVI-XVI线的剖面图;
图17是表示用于本发明又一实施例的半导体晶片薄型加工中的载体平面图;
图18是沿图17的XVIII-XVIII线的剖面图;
图19是表示用于本发明又一实施例的半导体晶片薄型加工中的载体平面图;
图20是沿图19的XX-XX线的剖面图;
图21是表示用于本发明又一实施例的半导体晶片薄型加工中的载体平面图;
图22是沿图21的XXII-XXII线的剖面图;
图23是表示图21载体的半导体晶片加工顺序的一部说明图;
图24是与图23连续表示图21载体的半导体晶片加工顺序的一部说明图;
图25是与图24连续表示图21载体的半导体晶片加工顺序的一部说明图;
图26是与图25连续表示图21载体的半导体晶片加工顺序的一部说明图;
图27是与图26连续表示图21载体的半导体晶片加工顺序的一部说明图;
图28是与图27连续表示图21载体的半导体晶片加工顺序的一部说明图;
图29(a)是表示半导体晶片与载体之间的粘附状态的说明图;
图29(b)是表示半导体晶片与载体之间的分离状态的说明图;
图30是与图28连续表示图21载体的半导体晶片加工顺序的一部说明图;
图31是表示本发明又一实施例的半导体晶片加工顺序的一部分说明图;
图32是与图31连续的说明图;
图33是与图32连续的说明图;
图34是与图33连续的说明图;
图35是与图34连续的说明图;
图36是与图35连续的说明图;
图37是与图36连续的说明图;
图38是表示用于本发明又一实施例的半导体晶片薄型加工的载体平面图;
图39是沿图38的XXXIX-XXXIX线的剖面图;
图40是表示用于本发明又一实施例的半导体晶片薄型加工的载体平面图;
图41是表示本发明又一实施例的半导体晶片加工顺序的一部分说明图;
图42是与图41连续的说明图;
图43是与图42连续的说明图;
图44是与图43连续的说明图;
图45是与图44连续的说明图;
图46是与图45连续的说明图;
图47是与图46连续的说明图;
图48是与图47连续的说明图;
图49是与图48连续的说明图;
图50是与图49连续的说明图;
图51是与图50连续的说明图;
图52是与图51连续的说明图;
图53是与图52连续的说明图;
图54是与图53连续的说明图;
图55是放大示出图41半导体晶片的芯片电极部分平面图;
图56是沿图55的C1~C1线剖面图;
图57是详细示出图48的说明图;
图58是表示按照本实施例制造的IC卡内部构造平面图;
图59是沿图55的C2~C2线剖面图;
图60是放大示出图59的A部分剖面图;
图61是放大示出图60的B部分剖面图。
实施本发明的最佳实施例
下面,根据附图详细说明本发明的实施例。还有,在用于说明实施例的各图中,对同一构件赋予同一的标号,且其重复说明从略。
图1是表示用于本发明一实施例的半导体晶片薄型加工中的载体平面图,图2是沿图1的II-II线的剖面图,图3、图4、图6~图10是连续表示图1载体的半导体晶片加工顺序的说明图,图5是用于半导体晶片薄型加工的腐蚀装置概略图。
图1和图2中示出的载体1吸附并保持半导体晶片2(见图3等),而在形成晶片复合体10(图3等)的板状物中,由基体材料1a和设于该基体材料1a的单面上的自由弹性变形的吸附衬垫(粘附构件)1b构成。沿半导体晶片2的形状,形成圆盘状的基体材料1a,例如由具有耐酸性的氟树脂、玻璃板、或环氧树脂等形成,另外,吸附半导体晶片2的吸附衬垫1b,例如用具有能吸附半导体晶片2的几乎整个单面区域大小的软质橡胶形成。还有,包括下面实施例中的情况下,构成载体1的基体材料1a考虑到防止因腐蚀液L(图5、图6)而引起的变质,用具有上述耐酸性的材料形成是理想的。并且,后述的腐蚀装置中的把持支杆的集中应力作用于半导体晶片2的被把持位置上为了防止半导体晶片2破损,所以基体材料1a的直径仅仅,例如比半导体晶片2约扩大10μm。
用这样的吸附衬垫1b,对半导体晶片2进行如下薄型加工。
首先,用金刚砂磨石或研磨磨料的背面磨削把对已形成于主表面上的电路器件到电特性检测为止的前处理工序完成后的半导体晶片2减薄到,例如大约250μm。但是,也可以直接进行下述的薄型加工,而不进行上述这样的预备加工。
其次,把未形成电路器件的面即背面向着与外侧即载体1相反方向,如图3所示,把半导体晶片2紧压到载体1上。在半导体晶片2的整个面上均匀地加上轻负荷,使吸附衬垫1b弹性变形,通过半导体晶片2被闭塞了的衬垫内的体积缩小,并排出内部空气。而且,如去除给半导体晶片2的负荷,则作为吸附衬垫1b因其弹性而恢复从前的形状,已缩小了空间的体积多少接近原来的体积,但由于紧贴着的半导体晶片2妨碍气体的流入,在吸附衬垫1b的内部造成减压状态,由该吸引力将半导体晶片2吸附到载体1上。因此形成晶片复合体10(图4)。还有,如图4所示,在本实施例中,虽然构成晶片复合体10的半导体晶片2和载体1的直径相等,但也可以把半导体晶片2作成比载体1的直径还小,或如后述比其直径还大。
在形成晶片复合体10后,使半导体晶片2在其上,将其收纳在多个盒式架20a(图5)中,搬运到腐蚀处理工序。
在这里,图5示出对于晶片复合体10的腐蚀装置。图示的腐蚀装置是旋转涂布腐蚀液L,腐蚀半导体晶片2的自转式的旋转腐蚀机,具备有:装有上述盒式架20a的装载部分30、载置被处理晶片复合体10的处理载体台50、装有收容处理后晶片复合体10的盒式架20b的卸载部分40。并且,具备有:从装载部分30向处理载体台50,从处理载体台50向卸载部分40移送晶片复合体10的输送装置60,使得晶片复合体10在该输送装置60内从背面提升的状态进行搬送。在已搭载于处理载体台50上的晶片复合体10中,为了从下方喷射N2气等惰性气体或空气,在处理载体台50的底下设置气体喷出口70。另外,以处理载体台50为中心,例如在其周围3个地方,保持每个120°设置握持晶片复合体10构造的把持支杆80。把持支杆80构造是用图未示出的电动机,以处理载体台50的旋转方式进行转动,因此,通过处理载体台50使晶片复合体10绕其旋转轴进行转动。在处理载体台50的上方,设有用于向半导体晶片2上滴下腐蚀液L的喷管90。
从在这种腐蚀装置的装载部分30里装入盒式架20a,通过输送装置60一片片抽出晶片复合体10,使半导体晶片2朝向上方装到处理载体台50上。在这里,由于输送装置60变成为提升晶片复合体10的背面使之搬送的构造,所以象真空吸附半导体晶片2一侧进行搬送的情况之类的冲击就不会加到半导体晶片2上,特别是可以防止薄型加工后的半导体晶片2破裂。
在装到处理载体台50上之后,从气体喷出口70,例如把N2气喷射到晶片复合体10上使其只从处理载体台50上浮起,在浮起处用把持支杆80握持住。而且,边继续喷射N2气,边以每分钟几十转到几千转的任意范围使晶片复合体10旋转,并从喷口90,如图6所示垂下腐蚀液L,对半导体晶片2施行薄型加工。在垂下腐蚀液L的时候,喷口90要边与半导体晶片2保持一定的距离,边通过其中心部以规定速度移动到周边部分为止,这对确保腐蚀后的平坦性是所希望的。设滴下腐蚀液L的腐蚀速度,例如为30μm/min,则腐蚀时间,例如约为400秒。还有,在高速旋转下不要发生震动、腐蚀液L成波浪引起腐蚀液不匀、或为了避免半导体晶片2从把持支杆80上脱落,并使旋转中心与半导体晶片2的中心一致。虽然腐蚀液L可根据腐蚀的目的选择其组成,但是在本实施例这样的薄型加工的情况下,腐蚀速率采用约10μm/min~100μm/min高速率是理想的。还有,在重视平坦的情况下,也可以把处理分为二个阶段,用低速率的腐蚀液L进行整修。在本实施例的情况下,虽然在腐蚀液L中,使用氢氟酸、硝酸和磷酸的混合液,但是也可以组成,例如在其中添加表面活性材料控制反应的混合液。
采用这样的腐蚀液,使晶片复合体10的半导体晶片2,如图7所示,减薄到例如厚度约50μm为止。但是,可以使厚度为任何量级,而不限度于50μm。还有,在腐蚀后,边向半导体晶片2上供给纯水边进行冲洗,而后加上1000~3000rpm的高速旋转,将其干燥。
薄型加工后,用输送装置60从处理载体台50卸下晶片复合体10,并送向在卸载部分40所准备的用于卸载的盒式架20b。对全部已收纳到装载部分30的盒式架20a中的晶片复合体进行这种处理,并收纳在用于卸载的盒式架20b之后,连盒式架20b一起从腐蚀装置取出。
而且,逐片从盒式架20b取出晶片复合体10,如图8所示,与通常半导体晶片2的贴附带同样,要将半导体晶片2的背面粘附于粘合面上,且紧贴到已在环状物3上贴附晶片复合体10的划片带4上去。另外,对划片带4来说,可使用,例如以PET(聚对苯二甲酸乙二酯)、氯乙烯、聚酯、聚乙烯等作为基底材料,其上涂覆丙烯酸系聚合物的粘合剂的带。但是,就基底材料和粘合剂而言,也可以应用除这些以外的各种各样材料制剂。
在紧贴于划片带4上之后,如图9所示,用剥离夹具5从半导体晶片2上剥下载体1。因此,厚50μm的半导体晶片2变成紧贴在划片带4上的物品(图10)。在该状态下,全部切割半导体晶片2,使之划开成各个半导体芯片。划片后,例如通过各向异性导电连接用薄片往IC卡上装配。
这样,倘采用本实施例的半导体晶片2的加工技术,由于作成使得半导体晶片2粘附于载体1上形成晶片复合体10,在这种晶片复合体10的状态下进行划片对半导体晶片2薄型加工,所以即使不给予特别注意也不会发生破裂和翘曲,并且可以稳定地把半导体晶片2加工成,例如50μm的超薄型。
并且,由于与具有薄型前厚度的半导体晶片2同样地进行加工,所以即使不给予特别注意也不会发生破裂,并可以达到随薄型加工而来的操作容易化。
还有,由于作成用把持支杆80握持晶片复合体10中的载体1部分,所以可以排除因把持支杆80产生的应力而发生翘曲,并在良好的精加工质量的原料上对半导体晶片2进行薄型加工。
由于作成通过吸附衬垫1b使半导体晶片2固定到基体材料1a上,所以与用带固定不同,成为可回收,同时可把载体1作成简单的构造,可用低成本的原料对半导体晶片2进行薄型加工。
而且,采用用耐酸性材料形成基体材料1a的办法,可以重复使用载体1,因而能够经济地大量产生薄型的半导体晶片2。
图11是表示用于本发明又一实施例的半导体晶片薄型加工中的载体平面图;图12是沿图11的XII-XII线的剖面图。
如图所示,在本实施例的载体1中,吸附衬垫1b是沿半导体晶片的周边形状形成环状的吸附衬垫。
倘采用这样的载体1,则由于吸附衬垫1b的减压而产生的保持力不作用在半导体晶片的周边部分上而只作用在内侧区域上,所以可以抑制向内侧的外应力而引起半导体晶片的翘曲。
图13是表示用于本发明又一实施例的半导体晶片薄型加工中的载体平面图;图14是沿图13的XIV-XIV线的剖面图。
在本实施例的载体1中,吸附衬垫1b是在基体材料1a的整个单面上设置多个的吸附衬垫。然而,借助于这些吸附衬垫1b在其多个地方吸附保持半导体晶片。
这样,通过设有多个吸附衬垫1b,即使因变坏或变形等缘故一部分吸附衬垫1b丧失吸附力,用其余的吸附衬垫1b也能确实地保持半导体晶片。
图15是表示用于本发明又一实施例的半导体晶片薄型加工中的载体平面图;图16是沿图15的XVI-XVI线的剖面图。
在本实施例中,把半导体晶片2的直径做成比载体1的直径还大的直径,以半导体晶片2的整个周边部分从载体1凸出来的形式,即以半导体晶片2从载体1外伸的形式形成晶片复合体10。由于作成使把持支杆不与伸出的半导体晶片2接触而能够握持载体1,所以在与把持支杆对应的3个地方,以比半导体晶片稍稍向外侧凸出的形状形成支杆接触用突起1a1。还有,这样一来半导体晶片2伸出的构成也能应用于其它实施例的载体1中。进而,根据半导体晶片2的最终厚度,即使采用外伸的构成时,当然也可以不设置支杆接触用突起1a1,直接保持半导体晶片2。
并且,基体材料1a的内部变成空洞6,通过空洞6连通与真空泵连接的真空孔6a,用于负压吸引半导体晶片2的吸附沟(粘附构件)11b以基体材料1a的中心作为中心,即被形成于基体材料1a的同心上。就真空孔6a来说,通常把它封闭起来,插入真空泵7的喷管7a时,进行金属管扩口并安装打开该真空孔6a的阀体8。还有,也不定必须在基体材料1a的同心上形成圆形吸附沟11b,例如也可以采用螺旋形等各种形状。而且,在图16中,虽然把阀体8配置于基体材料1a的中心,但是也可以作成,例如安装于基体材料1a的周边侧面上。进而,阀体8可以采用具有复杂构造的机械式的,或象橡胶之类的富有弹性简易型的阀体。
在该载体1中,首先在真空孔6a中插入喷管7a,打开阀体8,边延伸半导体晶片2与基体材料1a接触,边用真空泵7进行真空吸引,空洞6减压。而且,在真空吸引使半导体晶片2确实固定到基体材料1a上之后,拔出喷管7a,阀体8插入喷管7a的期间打开真空孔6a,空气从空洞6流向外部,但是在喷管7a被拔出后,变成了封闭真空孔6a的构造,因而阻止空气从外部流入空洞6,使半导体晶片2粘附于载体1上,并形成晶片复合体10。
形成这样的晶片复合体10之后,在上述实施例中叙述的要点是,边用图5示出的腐蚀装置旋转涂布腐蚀液L,边对半导体晶片2进行薄型加工。其中,在旋转着晶片复合体10的期间,从下方,连续喷射,例如N2气。N2气不遮蔽于该载体1上而喷向朝向下方的半导体晶片2的主表面的周边部分上。
在薄型加工结束后,被紧贴到划片带上之后打开真空孔6a,使空洞6恢复大气压。因此,丧失对半导体晶片2的吸附沟11b的吸附力,使载体1容易与半导体晶片2分离。而且,把划片带上的半导体晶片2切割为半导体芯片。
这样,倘采用本实施例的半导体晶片2的加工技术,由于被作成使得半导体晶片2外伸形成晶片复合体10,并被作成对该晶片复合体10从下边方喷射气体边旋转涂布腐蚀液L施行薄型加工,所以即便是用于例如在低速旋转下进行旋转涂布,没有达到大的离心力的情况下,也可以防止腐蚀液L绕到主表面。因此,当然排除了对已形成于半导体晶片2上的电路器件造成损伤的危险。
并且,由于作成以真空吸附半导体晶片2于载体1上的形式形成晶片复合体10,在薄型加工后,向大气开放并使两者分离,所以可以顺利地进行载体1的剥离。
进而,由于沿基体材料1a使半导体晶片2经常保持平整,所以可以抑制半导体晶片2的翘曲。
还有,虽然已经说过,与本实施例相反,也可以把半导体晶片2做成比载体1的直径还小,或把两者做成相同直径,但是在这样的情况下,由于把半导体晶片2的主表面周边无间隙牢固地粘附与载体1上,故可以防止腐蚀液L绕向主表面。而且,如本实施例的那样,不需要边向晶片复合体10喷射气体边旋转涂布腐蚀液L。并且,由于厚度薄的半导体晶片2没有从载体1上外伸了出去,所以对晶片复合体10的处理容易了。还有,因半导体晶片2的整个主表面盖以载体1而与外部空气隔断,故可以采用连同晶片复合体10一起浸泡到腐蚀液L中的浸渍方式,腐蚀半导体晶片2的背面施行薄型加工,而不用自转式的旋转腐蚀机。
图17是表示用于本发明的半导体晶片薄型加工的又一实施例的载体平面图;图18是沿图17的XVIII-XVIII线的剖面图。
在本实施例中,是形成吸附孔21b作为粘附构件,而不用上述实施例的吸附沟11b。也就是,在基体材料1a的单面上进行开口,在多处形成该吸附孔21b,与粘附沟21b同样,通过空洞6与连接于真空泵7的真空孔6b连通。而且,构造是用真空泵7负压吸引半导体晶片2。而且,也通过向大气开放进行与吸引着的半导体晶片2之间的分离。
这样,也可以做成,使之形成多个吸附孔21b,借助于吸附孔21b负压吸引半导体晶片2形成晶片复合体10。
图19是表示用于本发明的半导体晶片薄型加工的又一实施例的载体平面图;图20是沿图19的XX-XX线的剖面图。
在本实施例中,是在基体材料1a的单面上设置树脂制造或金属制造的多孔质体31b,而不用上述实施例中的吸附沟11b。如图19的A部分放大所示,在多孔质体31b上形成多个细孔31b1,如图20所示,通过空洞6与真空孔6a连通起来。在这样的载体1中,半导体晶片2被负压吸引于多孔质体31b的细孔31b1上,并且,借助于向大气开放而使之分离。
这样,也可以用多孔质体31b负压吸引半导体晶片2形成而晶片复合体10。
图21是表示用于本发明又一实施例的半导体晶片薄型加工的载体平面图,图22是沿图21的XXII-XXII线的剖面图,图23~图28、图30是表示继续图21的载体中的半导体晶片加工顺序的说明图,图29是表示半导体晶片与载体之间粘附状态和分离状态的说明图。还有,在本实施例中,由于图22中所示的粘附板部分41b1是透明的,所以在图21中,透过该粘附板部分41b1示出了网状物(剥离部分)41b2。
本实施例载体1中的粘附构件41b与基体材料1a为同一平面,并由形成多个凹部的网状物41b2、及位于该网状物41b2与半导体晶片2(图23~图30)之间使半导体晶片2粘附于基体材料1a上的粘附板部分41b1构成。粘附板部分41b1用象硬化性液体聚合物,即含有硬化成分已凝胶化的硅酮之类表面平滑具有可塑性的材料构成。然而,若表面象平滑的半导体晶片2那样的固体参与,整个表面相互紧贴,借助于界面粘附力就可被固定在粘附板部分41b1上。还有,也可以在基体材料1a上形成凹凸来替代网状物41b2用作剥离部分。
在基体材料1a的中央部分形成贯通孔1a2,在下述的半导体晶片2与载体1之间进行剥离时,使该贯通孔1a2与真空泵7连接起来。
其次,说明利用这种载体1的半导体晶片2的薄型加工顺序。另外,在本实施例中的加工顺序大致与最初叙述的实施例中叙述的顺序相同,故对重复的部分只做简要说明。
首先,如图23所示,把已减薄到规定厚度的半导体晶片2紧压到载体1上。这时,由于在粘附板部分41b1上存在延伸或松弛而造成的荡漾,在旋转的时候,半导体晶片2振动了起来,所以粘附板部分41b1必须与由基体材料1a和网状物41b2形成的表面完全粘合。若对半导体晶片2的整个表面加上均匀轻负荷,表面力就作用于半导体晶片2与粘附板部分41b1之间把半导体晶片2粘附到载体1上,形成晶片复合体10(图24)。把该晶片复合体10装载到图5示出的腐蚀装置中,对朝向上方的半导体晶片2的背面旋转涂布腐蚀液L(图25)并进行薄型加工(图26)。然后,从进行清洗和干燥、将晶片复合体10贴附到划片带4上(图27)、把基体材料1a的贯通孔1a2连接到真空泵7上产生负压吸引(图28)。因此,如图29(a)所示,通过面接触牢固粘合的半导体晶片2和粘附板部分41b1,如图29(b)所示,由于在吸引下,粘附板部分41b1被拉入到网状物41b2的凹部中,故可以说转变为点接触。由于这一转变,两者之间的表面力减少到极其之小,而将载体1与半导体晶片2拉开。而且,薄型的半导体晶片2被贴到划片带上(图30)。贴上后,全面切割半导体晶片2并切成各个半导体芯片。
这样一来,倘采用本实施例的半导体晶片2的加工技术,则由于在薄型加工后,使网状物41b2的周围为负压,把粘附板部分41b1拉向网状物41b2的凹部,半导体晶片2与粘附板部分41b1成为点接触,使表面力减小,就可将载体1与半导体晶片2拉开,所以,可以更容易地进行从半导体晶片2上剥离载体1的操作,可以大量生产性能良好的薄型半导体晶片2。
并且,由于沿基体材料1a时常使半导体晶片2保持平坦,所以可以抑制半导体晶片2的翘曲。
图31~图37是连续表示本发明的又一实施例的半导体晶片薄型加工顺序的说明图。
在图31示出的载体1里,由于用透明的粘合剂53把透明薄带52贴附到基体材料1a上,所以在薄带52的表面涂覆一照射UV(ultraviolet-紫外线)光54(图36),粘附力就会减小或丧失的,即脱落的UV硬化型粘合剂(粘附构件)51b。并且,基体材料1a,用例如象丙烯酸之类,具有透过UV光54的透明或半透明的,即透明性的材料构成。
用这种载体1的半导体晶片2薄型加工顺序如下。还有,与上述的情况同样,在本实施例中,加工顺序也与最初叙述的实施例说过的顺序大致相同,因此对重复的部分说明从略。
首先,如图31所示,把薄到规定厚度的半导体晶片2挤压到载体1的已涂覆了UV硬化型粘合剂51b的表面上。对半导体晶片2的整个表面均匀地加上轻轻的负荷,UV硬化型粘合剂51b就随着压到半导体晶片2上,将半导体晶片2与载体1固定一起,形成晶片复合体10(图32)。接着,要使得半导体晶片2的背面朝向上方,把晶片复合体10装入腐蚀装置中,采用边滴下腐蚀液L边旋转腐蚀的办法进行薄型加工(图33、图34)。而且,在清洗、干燥之后,把晶片复合体10贴附到划片带上(图35),通过基体材料1a照射UV光54(图36)。所照射的UV光透过透明的基体材料1a、薄带52和粘合剂53直至达到UV硬化型粘合剂51b,借助于该UV光54使UV硬化型粘合剂51b的粘合力减弱。在这种粘合力被减弱了的地方,把载体1与半导体晶片2拉开。由此,将薄型的半导体晶片2贴附到划片带4上(图30)。贴附后,对半导体晶片2进行全面切割,切成各个半导体芯片。还有,也可以对划片带4用UV光照射采用粘附力降低之类办法,在划片后挑选半导体芯片时照射UV光提高操作性。
这样以来,倘采用本实施例的半导体晶片2加工技术,由于用UV硬化型粘合剂51b作为粘附半导体晶片2与基体材料1a的粘接材料,在薄型加工后,照射UV光积极地减弱该粘合剂51b的粘附力,使得载体1与半导体晶片2剥离成为简单地进行剥离操作。
并且,由于借助于UV光54的照射,载体1与半导体晶片2之间的粘附力才降低,所以在移动象划片带4那样的薄型化后的半导体晶片2构件方面就没有受热影响的担心,就增加了半导体制造的过程设计的自由度。
进而,由于借助于使用UV硬化型粘合剂51b的办法,可以把晶片复合体10的厚度减薄,所以不必特别地对厚薄本身给予注意,就能够与具有正常厚度的半导体晶片一样进行划片。
而且,由于沿着基体材料1a时常使半导体晶片2保持平坦,所以可以抑制半导体晶片2的翘曲。
图38是表示用于本发明又一实施例的半导体晶片薄型加工的载体平面图,图39是沿图38的XXXIX-XXXIX线的剖面图。
本实施例中的载体1是,基体材料1a由例如厚度188μm的PET薄片构成,在该基体材料1a上涂覆,例如在0℃~5℃的低温粘附力减小或丧失的温度活性型粘合剂(粘附构件)61b的薄片状的基体材料。但是,也可以在基体材料1a上使用,例如100μm或250μm等各种厚度的PET薄片,进而,可以使用,例如塑料或玻璃板等,除PET薄片以外的基体材料。还有,就温度活性型粘合剂61b来说,例如使用平均宽度25mm,在10℃以上,90°皮尔(ピ-ル)强度为35gf~150gf,但是在大约0℃~5℃情况下,降低到0gf的冷却分离型的粘合剂。还有,根据使用环境,也可以使用温度活性点更高的接近15℃的粘合剂。这里,在本说明书中所谓温度活性型粘合剂61b,是指随温度变化而粘附力减小或丧失的粘合剂,包括在本实施例中叙述的这样低温下粘附力降低的冷却分离型和在高温下粘附力降低的加热分离型的两者之一。
在使用这种载体1的半导体晶片的薄型加工中,首先,在常温下,把半导体晶片张贴到载体1上,形成晶片复合体,施行与上述实施例同样的腐蚀处理使半导体晶片薄型化。而且,要使半导体晶片与粘附面粘合并把晶片复合体粘附于划片带上。然后,在冷藏库之类这样的低温中放置大约10分钟,使该晶片复合体冷却到例如3℃。在这里,由于温度活性型粘合剂61b是,在0℃~5℃下皮尔强度降低到0gf,粘附力大幅度地降低的冷却分离型,所以在冷却到3℃下容易从半导体晶片上剥离载体1。
还有,虽然在本实施例中的温度活性型粘合剂61b已使用了低温下粘附力降低的冷却分离型,但是也可以在基体材料1a或划片带上使用在不受热影响范围的高温型粘附力降低的加热分离型。并且,若使用对划片带在UV光照射下粘附力降低的UV带,则可以完全排除热影响。
这样,倘采用本实施例的半导体晶片薄型加工技术,则由于做成为,在载体1的粘附构件上使用温度活性型粘合剂61b,并随温度变化使粘附力降低,将其从半导体晶片上剥离下来,所以可以简单地进行剥离操作。并且,由于可以重复使用载体1,因此可以经济地大量生产薄型半导体晶片。
进而,因用PET薄片构成基体材料1a,故可以把晶片复合体的厚度减薄,并且可以与具有通常厚度的半导体晶片一样的处理。除此之外,还可以降低成本,可以把载体1作为不可回收物。
这样一来,若把基体材料1a做成薄片状的基座,则在从半导体晶片上取下的时候,为剥离而进行撕剥,就可以比取下用板状而且固体材料的基座的情况下,容易进行剥离。另外,还可以把施加薄型腐蚀前的BG(backgrinding-背面研磨)等的保护带利用到该基体材料1a上。
而且,由于沿基体材料1a使半导体晶片常常得以保持平坦,所以即使用本实施例的载体1,也可以抑制半导体晶片的翘曲。
图40是表示用于本发明又一实施例中的半导体晶片薄型加工的载体剖面图。
本实施例的载体1中的基体材料1a由纤维状的氟树脂压紧构成,以替代上述实施例叙述的PET薄片。采用制成这样的基体材料1a,把温度活性型粘合剂61b等的粘附构件涂覆到基体材料1a上,确实有进入氟树脂间隙固定的效果。另外,也可以把上述实施例中叙述的UV硬化型粘合剂51b用于粘附构件。
倘采用这样的载体1,则可以把具有耐酸性这一特征的氟树脂作为基体材料1a,并使用与之粘附性不好的温度活性型粘合剂61b等各种粘合剂。
图41~54是连续表示本发明一实施例的IC卡制造方法的说明图,图55是放大表示图41的半导体晶片的芯片电极部分平面图,图56是沿图55的C1~C1线的剖面图,图57是详细表示图48的说明图,图58是表示按照本实施例制成的IC卡内部构造平面图,图59是沿图58的C2~C2线的剖面图,图60是放大表示图59的A部分剖面图,图61是放大表示图60的B部分剖面图。
在本实施例的IC卡制造方法中,首先,如图41所示,准备在主表面上打算制作电路器件的所谓晶片工艺完了后的半导体晶片2。因此,在主表面上形成例如由Si3N4构成的钝化膜2a(图55、图56),使电路器件与外部空气隔断,达到器件特性的稳定。另外,在图示的情况下,在芯片电极上,例如用电解电镀法或蒸镀法形成Au(金)凸点电极2b,并通过该Au凸点电极2b与下述的基板卡101(图53等)上的布线101a(图58等)电连接。但是,也可以用焊线法制成线连接,而不用这样的凸点连接。并且,也可以在芯片电极上形成由Pb(铅)/Sn(锡)凸点电极等其它金属构成的凸点电极。
在这里,图55示出了半导体晶片2的芯片电极。如图示的那样,在Au凸点电极的周围形成钝化膜2a。如作为沿图55的C1~C1线的剖面图的图56所示,保护器件区域A的钝化膜2a由位于下层的无机钝化膜2a1和位于上层的有机钝化膜2a2构成,无机钝化膜2a1例如由1.2μm厚的SiN(氮化硅)和0.6μm厚的SiO2(氧化硅)形成,有机钝化膜2a2例如由2.3μm厚的聚酰亚胺形成。在器件区域A的上边,例如在厚度0.8μm厚的Al电极布线2c上形成凸点电极下部金属层2d,把该凸点电极下部金属层2d作为电镀电极,形成上述Au凸点电极2b,例如高度为20μm。另外,在本实施例中,为了提高粘附性和防止金属扩散,使用了Ti(钛)/Pd(钯)作为凸点电极下部金属层2d,但是,也可以用其它金属,例如TW(钛钨)、Cr(铬)、Cu(铜)等。
其次,如图42所示,在半导体晶片2的主表面上,涂覆、加热形成表面保护用的保护层111。而且,如图43所示,在半导体晶片2的主表面上粘附背面研磨用的BG带112并施行BG加工,如图44所示,例如使550μm厚的半导体晶片2减薄到150μm为止。在这里,由于在主表面上已涂覆了保护层111,故在BG工艺中,可以防止由产生研磨碎屑而引起的半导体晶片2的表面污染。
如果用BG加工把半导体晶片2磨薄后,如图45所示,就剥去BG带112,如图46所示,除去保护层111。
而且,例如准备由厚度250μmPET的薄片构成的基体材料上,用通常的粘合剂(即,非温度活性型的粘合剂)涂覆过的载体1,如图47所示,使半导体晶片2的背面朝向相反方向的那样,把它粘附到载体1上形成晶片复合体10。但是,对载体1而言也可以使用上述实施例说过的其它各种载体1。
在这里,载体1的粘合剂厚度与Au凸点电极2b高度相同为20μm。所以,不但Au凸点电极2b,而且处于比该Au凸点电极2b低20μm的位置晶片表面的钝化膜2a上粘合剂也有作用。因此,整个载体1与半导体晶片2紧贴并防止两者剥离。另外,粘合剂粘附于晶片表面上即使是超过Au凸点电极2b高度的厚度,粘合剂的厚度就会是大于Au凸点电极的高度(即,是与Au凸点电极的高度相同值,或是比其还大的值)。
如果形成晶片复合体10后,如图48所示,使晶片一侧朝向上方,向其背面滴下腐蚀液L,用旋转腐蚀法把半导体晶片2的厚度减薄到,例如50μm。在这里,在把半导体晶片2减薄到这种数量级之际,之所以翘曲,是因为半导体晶片2的刚性变小并释放在钝化2a中的残留应力的缘故。特别是,当伴随作为无机钝化膜2a1的SiN压缩应力或作为有机钝化膜2a2的聚酰亚胺的硬化收缩而释放拉伸应力时,半导体晶片2的表面变成各种各样凹凸状翘曲。在这里,由于如本实施例的那样,多亏在载体1上粘附半导体晶片2形成晶片复合体10,构成载体1的基体材料增强半导体晶片2的刚性下降并起着阻止钝化膜2a应力释放的作用,所以薄型加工的半导体晶片2不发生翘曲。另外,如图48所示,在本实施例中,由于半导体晶片2的直径比载体1的直径还大,半导体晶片2从载体1向外伸出,为了在腐蚀时,防止腐蚀液L绕到晶片主表面上去,所以向着晶片复合体10的下表面喷射,例如N2气(氮气)。
在旋转腐蚀中,如图57所示,采用例如无支杆吸盘式的腐蚀装置113。其中,在处理台113a的表面多处开口形成真空吸引的吸附沟113a1。构成是采用该吸附沟113a1与连接到真空泵的吸引管13b的吸引沟113b1连通,通过该吸引沟113b1真空吸引吸附沟113a1的办法,把半导体晶片2吸附并固定到处理台113a上。而且,如图示的那样,即使半导体晶片2从处理台113a上向外伸出去,也不需要用把持支杆支持周边部分。因此,由于腐蚀液L滞留在把持支杆等的支持处,就不会局部进行腐蚀发生缺陷或凹坑。
还有,由于能够在半导体晶片2与载体1之间的粘附力坚固,没有上述腐蚀液L的回绕问题,所以也就半导体晶片2的直径比载体1的直径还小的构成。此时不仅变成不需要向晶片复合体10喷射N2气G,如上所述,也可以采用浸渍式等其它的腐蚀方式对半导体晶片2施行薄型加工。
如果把半导体晶片2减薄到50μm,则如图49所示,使半导体晶片2朝下把晶片复合体10粘附到划片带4上,如图50所示,在真空吸附台上固定带的下表面,用剥离法从半导体晶片2上剥去载体1。
然后,如图51所示,例如通过全面切割把半导体晶片2分割为各个半导体芯片P,如图52所示,对划片带4照射UV光54使划片带4与半导体晶片2之间减小或丧失粘附力。
而且,如听53所示,在半导体芯片P的上方安置卡式基板101,采用从下方用上冲杆114上冲直接复制方式,介以异性导电粘合剂116把半导体芯片P临时定位在卡式基板101的芯片搭载位置上。然后,如图54所示,在台座117上边支持边用焊头118加热热压对其进行压焊。
这样一来,图58示出用已安装了半导体芯片P的卡式基板101作成的IC卡100。图示的IC卡100是以叠层方式组装的无线式IC卡,在卡式基板101上,沿其周边形状形成环状作为进行接收外部信号的天线的印刷线圈101b。作成使之从印刷线圈101b伸出,形成使该印刷线圈101b和半导体芯片P导通的布线101a,因此,构造是在有各种功能的半导体芯片P与外部之间接收发送信号。
如图59所示,IC卡100的各构成材料作成叠层构造,用粘合剂粘合起来。也就是,在卡式基板101的芯片搭载面一侧,相当于印刷线圈101b、布线101a和安装半导体芯片P的地方,粘附变成了凹槽的隔离垫102,因此在隔离垫102和半导体芯片P上构成平面。进而,就成为在隔离垫102上,粘附调整厚度的厚度修正用薄层103,使得IC芯片或电容器芯片的这种半导体芯片成为IC卡100的弯曲支点中点(弯曲中点:例如在半导体芯片P的两侧构成材料完全相等的情况下,成为在IC卡100的厚度中心。),在曲折IC卡100的情况下,缓和加到芯片P上的压缩力和拉伸力。而且,作成夹着叠层的卡式基板101、隔离垫102和厚度修正用薄层103,并粘附构成IC卡100的正反面的外装饰板104a、104b。还有,在本实施例中,卡式基板101、厚度修正用薄层103和外装饰板104a、104b都用PET。
如放大图59的A部分的图60所示,在IC卡100的芯片组装部分中,Au凸点电极2b用各向异性导电粘合剂116与布线101a电连接,并把半导体芯片P安装到卡式基板101上。而且,介以隔离垫102把厚度修正用薄层103粘附到卡式基板101上。并且,如放大图60的B部分的图61所示,例如用在球状塑料中施加Au涂层的粒径约5μm的导电性粒子116a和粘合剂116b组成的各向异性导电粘合剂116的导电性粒子,夹在Au凸点电极2b与布线101a之间并被压跨(扁)。而且,介以压跨导电性粒子116a,使Au凸点电极2b与布线101a之间导通。
这样,倘采用本实施例的IC卡100的制造方法,由于用载体1与半导体晶片2形成晶片复合体10,不会发生破裂或翘曲,把半导体晶片2加工成例如50μm这样的薄型,由于用该半导体晶片2划片后的半导体芯片P,作成组装IC卡100,所以可以进一步推进IC卡100的薄型化。
以上,虽然根据本实施例具体地说明了由本发明人作出的发明,但是不言而喻,本发明不限于上述实施例,在不脱离其要点的范围内可以有种种变更。
例如,可以作成,用氟树脂、玻璃板、或环氧树脂等整体形成构成基体材料1a,在吸附头上用例如水之类的表面力,利用使半导体晶片2紧贴到基体材料1a上的液体,边加超声波边从半导体晶片2上剥离载体1。
如上述的那样,本发明的半导体晶片加工技术适合应用于,例如在象IC卡那样的超薄型电子设备中内装的半导体芯片上。
Claims (25)
1、一种半导体晶片的加工方法,其特征是包括:
准备由基体材料和已设置于该基体材料的单面上的粘附构件构成的板状或薄片状载体的第1工序;
以未形成电路元件的背面朝向与上述载体相反方向,把半导体晶片粘附于上述载体上形成晶片复合体的第2工序;
使上述晶片复合体的上述半导体晶片一侧朝向上方,保持上述晶片复合体,在上述半导体晶片的背面旋转涂布腐蚀液,对上述半导体晶片施行薄型加工的第3工序。
2、根据权利要求1所述的半导体晶片的加工方法,其特征是,规定上述半导体晶片为与比上述载体直径还大,要形成上述晶片复合体使上述半导体晶片的整个周边部分从载体伸了出去,在上述第3工序中,可以对上述晶片复合体边从下方喷射气体,边对上述半导体晶片施行薄型加工。
3、根据权利要求1所述的半导体晶片的加工方法,其特征是,规定上述半导体晶片为与上述载体同一直径或比上述载体还小的直径,形成上述晶片复合体使得上述半导体晶片的周边部分不会从上述载体伸出。
4、根据权利要求1所述的半导体晶片的加工方法,其特征是,具有在用上述第3工序对上述半导体晶片进行了薄型加工之后,把其背面粘贴于划片板上进行剥离上述载体的第4工序;及
把上述划片板上的上述半导体晶片切割成各个半导体芯片的第5工序。
5、一种半导体晶片的加工方法,其特征是包括:
准备在已作成电路器件的主表面上形成了钝化膜的半导体晶片的第1工序;
准备由基体材料和已设置于该基体材料的单面上的粘附构件构成的板状或薄片状载体的第2工序;
使未形成电路器件的背面朝向与上述载体相反方向,把上述半导体晶片粘附于上述载体上,形成晶片复合体的第3工序;
使上述晶片复合体的上述半导体晶片一侧朝向上方,保持上述晶片复合体,在上述半导体晶片的背面旋转涂布腐蚀液,并对上述半导体晶片进行薄型加工的第4工序。
6、根据权利要求5所述的半导体晶片的加工方法,其特征是,在用上述第4工序对半导体晶片进行薄型加工之后,具有把其背面粘贴于划片板上进行剥离上述载体的第5工序;以及
把上述划片板上的上述半导体晶片切割成各个半导体芯片的第6工序。
7、一种IC卡的制造方法是,其特征是包括:
准备由基体材料和已设置于该基体材料的单面上的粘附构件构成的板状或薄片状载体的第1工序;
使未形成电路器件的背面朝向与载体成相反方向,把半导体晶片粘附于载体上形成晶片复合体的第2工序;
使上述晶片复合体的上述半导体晶片一侧朝向上方,保持上述晶片复合体,在上述半导体晶片的背面旋转涂布腐蚀液,对上述半导体晶片进行薄型加工的第3工序;
把薄型加工后的上述半导体晶片背面粘贴于划片板上,剥离上述载体的第4工序;
把上述划片板上的上述半导体晶片切割为各个半导体芯片的第5工序;
使与上述划片板的粘附力减少或丧失的第6工序;
把上述半导体芯片安装到卡式基板的芯片搭载位置的第7工序;以及
用已安装了上述半导体芯片的上述卡式基板制成IC卡的第8工序。
8、一种IC卡的制造方法是,其特征是包括:
准备在已制成电路器件的主表面上形成了钝化膜半导体晶片的第1工序;
准备由基体材料和已设置于该基体材料的单面上的粘附构件构成的板状或薄片状载体的第2工序;
使未形成电路器件的背面朝向与上述载体成相反方向,把上述半导体晶片粘附于上述载体上形成晶片复合体的第3工序;
使上述晶片复合体的半导体晶片一侧朝向上方,保持上述晶片复合体,在上述半导体晶片的背面旋转涂布腐蚀液,对上述半导体晶片施行薄型加工的第4工序;
把薄型加工后的上述半导体晶片的背面粘贴于划片板上,剥离上述载体的第5工序;
把上述划片板上的上述半导体晶片切割成各个半导体芯片的第6工序;
使之与上述划片板的粘附力减少或丧失的第7工序;
把上述半导体芯片安装到卡式基板的芯片搭载位置的第8工序;以及
用已安装了上述半导体芯片的上述卡式基板制成IC卡的第9工序。
9、根据权利要求7所述的IC卡的制造方法,其特征是,在上述半导体晶片的芯片电极上形成凸点电极,已在上述基体材料上设置的上述粘附构件的厚度大于上述凸点电极的高度。
10、根据权利要求7所述的IC卡的制造方法,其特征是,在上述第7工序中,从上述划片板直接把上述半导体芯片安装到上述卡式基板上。
11、一种使用于根据权利要求1所述的半导体晶片的加工方法的载体,其特征是,上述粘附构件是用减压空间吸附上述半导体晶片的自由弹性变形的吸附衬垫。
12、根据权利要求11所述的载体,其特征是,上述吸附衬垫作成能够吸附上述半导体晶片的单面几乎整个区域的大小。
13、根据权利要求11所述的载体,其特征是,上述吸附衬垫沿上述半导体晶片的周边形状形成环状。
14、根据权利要求11所述的载体,其特征是,上述吸附衬垫,不是在上述基体材料上的单面整个区域上而是设有多个,用这些吸附衬垫在多处吸附保持上述半导体晶片。
15、一种使用于根据权利要求1所述的半导体晶片的加工方法的载体,其特征是,上述粘附构件,被形成在上述基体材料上,并与连接到真空泵的真空孔连通,负压吸引上述半导体晶片的一侧面,在大气压下从上述半导体晶片上进行剥离的吸附沟。
16、一种使用于根据权利要求1所述的半导体晶片的加工方法的载体,其特征是,上述粘附构件,在所述基体材料的单面上开口且形成多个,并与连接到真空泵的真空孔连通,负压吸引上述半导体晶片的一侧面,在大气压下从所述半导体晶片上剥离的吸附孔。
17、一种使用于根据权利要求1所述的半导体晶片的加工方法的载体,其特征是,上述粘附构件,设置在上述基体材料的单面上,并用与连接到真空泵的真空孔连通的多个细孔,负压吸引上述半导体晶片的一侧面,在大气压下从上述半导体晶片上剥离的多孔质体。
18、一种使用于根据权利要求1所述的半导体晶片的加工方法的载体,其特征是,上述粘附构件,由与上述基体材料为同一面形成多个凹部的剥离部分,和位于该剥离部分与上述半导体晶片之间使上述半导体晶片粘附于基体材料的已凝胶化的硅酮构成,使上述剥离部分的周围成为负压且使上述硅酮陷入到上述凹部中,并从上述半导体晶片上剥离的粘附板部分。
19、根据权利要求18所述的载体,其特征是,上述剥离部分是网状或形成于上述基体材料上的凹凸。
20、一种使用于根据权利要求1所述的半导体晶片的加工方法的载体,其特征是,上述基体材料是由具有透明性的材料构成,并且,上述粘附材料是用透过上述基体材料照射紫外线使粘附力减少或丧失而从上述半导体晶片上剥离的UV硬化型粘合剂。
21、一种使用于根据权利要求1所述的半导体晶片的加工方法的载体,其特征是,上述粘附材料是随温度变化使粘附力减少或丧失而从上述半导体晶片上剥离的温度活性型粘合剂。
22、根据权利要求21所述的载体,其特征是,上述温度活性型粘合剂是在低温下粘附力减少或丧失的粘合剂。
23、一种使用于根据权利要求1所述的半导体晶片的加工方法的载体,其特征是,上述粘附构件是以表面力使上述半导体晶片紧贴于上述基体材料的一侧面上,用超声波从上述半导体晶片上剥离的液体。
24、根据权利要求11所述的载体,其特征是,上述基体材料由具有耐酸性的材料构成。
25、根据权利要求24所述的载体,其特征是,上述基体材料是压紧固化纤维状氟树脂而构成的材料。
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- 1996-10-02 AU AU71447/96A patent/AU729849B2/en not_active Ceased
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- 1996-10-02 KR KR1019980704098A patent/KR19990071818A/ko not_active Application Discontinuation
- 1996-10-02 CN CN96198789A patent/CN1203696A/zh active Pending
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US6573158B2 (en) | 2003-06-03 |
TW328141B (en) | 1998-03-11 |
CA2238974A1 (en) | 1997-06-12 |
AU729849B2 (en) | 2001-02-08 |
US20020034860A1 (en) | 2002-03-21 |
US20020048907A1 (en) | 2002-04-25 |
EP0866494A4 (en) | 2000-03-22 |
KR19990071818A (ko) | 1999-09-27 |
EP0866494A1 (en) | 1998-09-23 |
WO1997021243A1 (en) | 1997-06-12 |
US6589855B2 (en) | 2003-07-08 |
US6342434B1 (en) | 2002-01-29 |
AU7144796A (en) | 1997-06-27 |
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