TW328141B - Manufacturing method for semiconductor wafer and IC card and its bearer - Google Patents

Manufacturing method for semiconductor wafer and IC card and its bearer

Info

Publication number
TW328141B
TW328141B TW085113772A TW85113772A TW328141B TW 328141 B TW328141 B TW 328141B TW 085113772 A TW085113772 A TW 085113772A TW 85113772 A TW85113772 A TW 85113772A TW 328141 B TW328141 B TW 328141B
Authority
TW
Taiwan
Prior art keywords
bearer
semiconductor wafer
wafer
manufacturing
engineering process
Prior art date
Application number
TW085113772A
Other languages
English (en)
Inventor
Toshio Miyamoto
Kunihiro Tsubosaki
Mitsuo Usami
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW328141B publication Critical patent/TW328141B/zh

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077Constructional details, e.g. mounting of circuits in the carrier
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • G06K19/0775Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card arrangements for connecting the integrated circuit to the antenna
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
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    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • G06K19/07773Antenna details
    • G06K19/07777Antenna details the antenna being of the inductive type
    • G06K19/07779Antenna details the antenna being of the inductive type the inductive antenna being a coil
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    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
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    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
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    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
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    • G06K19/07749Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • G06K19/07773Antenna details
    • G06K19/07777Antenna details the antenna being of the inductive type
    • G06K19/07779Antenna details the antenna being of the inductive type the inductive antenna being a coil
    • G06K19/07783Antenna details the antenna being of the inductive type the inductive antenna being a coil the coil being planar
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TW085113772A 1995-12-04 1996-11-11 Manufacturing method for semiconductor wafer and IC card and its bearer TW328141B (en)

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Families Citing this family (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19921230B4 (de) * 1999-05-07 2009-04-02 Giesecke & Devrient Gmbh Verfahren zum Handhaben von gedünnten Chips zum Einbringen in Chipkarten
JP2001044144A (ja) 1999-08-03 2001-02-16 Tokyo Seimitsu Co Ltd 半導体チップの製造プロセス
US6140146A (en) * 1999-08-03 2000-10-31 Intermec Ip Corp. Automated RFID transponder manufacturing on flexible tape substrates
JP2001094005A (ja) * 1999-09-22 2001-04-06 Oki Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
DE19962431B4 (de) * 1999-12-22 2005-10-20 Micronas Gmbh Verfahren zum Herstellen einer Halbleiteranordnung mit Haftzone für eine Passivierungsschicht
KR100467009B1 (ko) * 2000-08-04 2005-01-24 샤프 가부시키가이샤 반도체 웨이퍼 표면의 오염을 방지할 수 있는 반도체웨이퍼의 박층화 방법 및 반도체 웨이퍼의 이면 연삭장치
JP4546626B2 (ja) * 2000-08-29 2010-09-15 株式会社ディスコ 半導体素子のピックアップ方法
JP2002075937A (ja) * 2000-08-30 2002-03-15 Nitto Denko Corp 半導体ウエハの加工方法
JP2002092575A (ja) * 2000-09-19 2002-03-29 Mitsubishi Electric Corp 小型カードとその製造方法
JP2002134466A (ja) * 2000-10-25 2002-05-10 Sony Corp 半導体装置の製造方法
US6949158B2 (en) * 2001-05-14 2005-09-27 Micron Technology, Inc. Using backgrind wafer tape to enable wafer mounting of bumped wafers
US6794751B2 (en) * 2001-06-29 2004-09-21 Intel Corporation Multi-purpose planarizing/back-grind/pre-underfill arrangements for bumped wafers and dies
JP3892703B2 (ja) 2001-10-19 2007-03-14 富士通株式会社 半導体基板用治具及びこれを用いた半導体装置の製造方法
JP3880397B2 (ja) * 2001-12-27 2007-02-14 日東電工株式会社 保護テープの貼付・剥離方法
US6908784B1 (en) * 2002-03-06 2005-06-21 Micron Technology, Inc. Method for fabricating encapsulated semiconductor components
US6881675B2 (en) * 2002-05-15 2005-04-19 Taiwan Semiconductor Manufacturing Co, Ltd. Method and system for reducing wafer edge tungsten residue utilizing a spin etch
JP3838637B2 (ja) * 2002-06-10 2006-10-25 日東電工株式会社 ガラス基板ダイシング用粘着シートおよびガラス基板ダイシング方法
JP2004014956A (ja) * 2002-06-11 2004-01-15 Shinko Electric Ind Co Ltd 微小半導体素子の加工処理方法
US7148126B2 (en) * 2002-06-25 2006-12-12 Sanken Electric Co., Ltd. Semiconductor device manufacturing method and ring-shaped reinforcing member
US6903442B2 (en) * 2002-08-29 2005-06-07 Micron Technology, Inc. Semiconductor component having backside pin contacts
US6780733B2 (en) * 2002-09-06 2004-08-24 Motorola, Inc. Thinned semiconductor wafer and die and corresponding method
JP3748844B2 (ja) * 2002-09-25 2006-02-22 Necエレクトロニクス株式会社 半導体集積回路およびそのテスト方法
SG116533A1 (en) * 2003-03-26 2005-11-28 Toshiba Kk Semiconductor manufacturing apparatus and method of manufacturing semiconductor device.
US7288465B2 (en) * 2003-04-15 2007-10-30 International Business Machines Corpoartion Semiconductor wafer front side protection
TWI318649B (en) 2003-06-06 2009-12-21 Hitachi Chemical Co Ltd Sticking sheep, connecting sheet unified with dicing tape,and fabricating method of semiconductor device
US6951775B2 (en) * 2003-06-28 2005-10-04 International Business Machines Corporation Method for forming interconnects on thin wafers
EP1494167A1 (en) * 2003-07-04 2005-01-05 Koninklijke Philips Electronics N.V. Flexible semiconductor device and identification label
JP2005039114A (ja) * 2003-07-17 2005-02-10 Disco Abrasive Syst Ltd 半導体ウェーハ移し替え装置
JP4405211B2 (ja) * 2003-09-08 2010-01-27 パナソニック株式会社 半導体チップの剥離装置、剥離方法、及び半導体チップの供給装置
DE20318462U1 (de) 2003-11-26 2004-03-11 Infineon Technologies Ag Anordnung elektronischer Halbleiterbauelemente auf einem Trägersystem zur Behandlung der Halbleiterbauelemente mit einem flüssigen Medium
US20050136653A1 (en) * 2003-12-22 2005-06-23 Ramirez Jose G. Non-adhesive semiconductor wafer holder and assembly
US20050147489A1 (en) * 2003-12-24 2005-07-07 Tian-An Chen Wafer supporting system for semiconductor wafers
TWI230426B (en) * 2004-04-07 2005-04-01 Optimum Care Int Tech Inc Packaging method of integrated circuit
DE102004018249B3 (de) * 2004-04-15 2006-03-16 Infineon Technologies Ag Verfahren zum Bearbeiten eines Werkstücks an einem Werkstückträger
DE102004018250A1 (de) * 2004-04-15 2005-11-03 Infineon Technologies Ag Wafer-Stabilisierungsvorrichtung und Verfahren zu dessen Herstellung
US20050281056A1 (en) * 2004-05-25 2005-12-22 Loomis Jason A Ornament lighting apparatus
KR101020661B1 (ko) * 2004-06-02 2011-03-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP4306540B2 (ja) * 2004-06-09 2009-08-05 セイコーエプソン株式会社 半導体基板の薄型加工方法
KR100574983B1 (ko) * 2004-07-06 2006-05-02 삼성전자주식회사 반도체소자 제조를 위한 반도체웨이퍼 처리방법
US7591863B2 (en) * 2004-07-16 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip
US20150287660A1 (en) 2007-01-05 2015-10-08 Semiconductor Energy Laboratory Co., Ltd. Laminating system, ic sheet, scroll of ic sheet, and method for manufacturing ic chip
WO2006011665A1 (en) * 2004-07-30 2006-02-02 Semiconductor Energy Laboratory Co., Ltd. Laminating system, ic sheet, scroll of ic sheet, and method for manufacturing ic chip
US20060046499A1 (en) * 2004-08-20 2006-03-02 Dolechek Kert L Apparatus for use in thinning a semiconductor workpiece
US7354649B2 (en) 2004-08-20 2008-04-08 Semitool, Inc. Semiconductor workpiece
US20060040111A1 (en) * 2004-08-20 2006-02-23 Dolechek Kert L Process chamber and system for thinning a semiconductor workpiece
US7193295B2 (en) * 2004-08-20 2007-03-20 Semitool, Inc. Process and apparatus for thinning a semiconductor workpiece
US7288489B2 (en) * 2004-08-20 2007-10-30 Semitool, Inc. Process for thinning a semiconductor workpiece
US20060046433A1 (en) * 2004-08-25 2006-03-02 Sterrett Terry L Thinning semiconductor wafers
US7049208B2 (en) 2004-10-11 2006-05-23 Intel Corporation Method of manufacturing of thin based substrate
TWI237915B (en) * 2004-12-24 2005-08-11 Cleavage Entpr Co Ltd Manufacturing method of light-emitting diode
EP1858058B1 (en) * 2005-02-03 2012-01-11 Shin-Etsu Polymer Co., Ltd. Fixation carrier, production method of fixation carrier, use method of fixation carrier, and substrate reception container
JP4528668B2 (ja) * 2005-05-17 2010-08-18 Okiセミコンダクタ株式会社 半導体装置の製造方法
JP4613709B2 (ja) * 2005-06-24 2011-01-19 セイコーエプソン株式会社 半導体装置の製造方法
US7169248B1 (en) * 2005-07-19 2007-01-30 Micron Technology, Inc. Methods for releasably attaching support members to microfeature workpieces and microfeature assemblies formed using such methods
DE102006000687B4 (de) 2006-01-03 2010-09-09 Thallner, Erich, Dipl.-Ing. Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers
US20070183184A1 (en) * 2006-02-03 2007-08-09 Semiconductor Energy Laboratory Ltd. Apparatus and method for manufacturing semiconductor device
KR100804891B1 (ko) * 2006-02-14 2008-02-20 엘에스전선 주식회사 다이싱 다이 접착필름 및 이를 이용한 반도체 패키징 방법
US7749349B2 (en) * 2006-03-14 2010-07-06 Micron Technology, Inc. Methods and systems for releasably attaching support members to microfeature workpieces
US20070217119A1 (en) * 2006-03-17 2007-09-20 David Johnson Apparatus and Method for Carrying Substrates
US20070238222A1 (en) 2006-03-28 2007-10-11 Harries Richard J Apparatuses and methods to enhance passivation and ILD reliability
US20070246839A1 (en) * 2006-04-21 2007-10-25 Applied Materials, Inc. Method of proximity pin manufacture
US7985621B2 (en) * 2006-08-31 2011-07-26 Ati Technologies Ulc Method and apparatus for making semiconductor packages
KR100817718B1 (ko) * 2006-12-27 2008-03-27 동부일렉트로닉스 주식회사 반도체 소자 제조방법
US7851333B2 (en) * 2007-03-15 2010-12-14 Infineon Technologies Ag Apparatus comprising a device and method for producing it
JP4746003B2 (ja) * 2007-05-07 2011-08-10 リンテック株式会社 移載装置及び移載方法
US7767557B2 (en) * 2007-05-11 2010-08-03 Micron Technology, Inc. Chilled wafer dicing
US7816232B2 (en) * 2007-11-27 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate and semiconductor substrate manufacturing apparatus
CN101925996B (zh) * 2008-01-24 2013-03-20 布鲁尔科技公司 将器件晶片可逆地安装在载体基片上的方法
US20090191029A1 (en) * 2008-01-30 2009-07-30 Taeg Ki Lim System for handling semiconductor dies
JP5417729B2 (ja) * 2008-03-28 2014-02-19 住友ベークライト株式会社 半導体用フィルム、半導体装置の製造方法および半導体装置
WO2009099191A1 (ja) 2008-02-07 2009-08-13 Sumitomo Bakelite Company Limited 半導体用フィルム、半導体装置の製造方法および半導体装置
US7972969B2 (en) * 2008-03-06 2011-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for thinning a substrate
DE102008024790A1 (de) * 2008-05-23 2009-12-10 Smartrac Ip B.V. Antennenanordnung für eine Chipkarte
JP2009295695A (ja) * 2008-06-03 2009-12-17 Sumco Corp 半導体薄膜付基板およびその製造方法
TWI439351B (zh) * 2008-09-29 2014-06-01 Nitto Denko Corp Adsorption tablets
DE102008055155A1 (de) 2008-12-23 2010-07-01 Thin Materials Ag Trennverfahren für ein Schichtsystem umfassend einen Wafer
JP2009094539A (ja) * 2009-01-21 2009-04-30 Disco Abrasive Syst Ltd Csp基板の分割加工方法
US8820728B2 (en) * 2009-02-02 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor wafer carrier
EP2402981B1 (de) 2009-03-18 2013-07-10 EV Group GmbH Vorrichtung und Verfahren zum Ablösen eines Wafers von einem Träger
US8237252B2 (en) 2009-07-22 2012-08-07 Stats Chippac, Ltd. Semiconductor device and method of embedding thermally conductive layer in interconnect structure for heat dissipation
EP2290679B1 (de) 2009-09-01 2016-05-04 EV Group GmbH Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats (z.B. eines Halbleiterwafers) von einem Trägersubstrat durch Verformung eines auf einem Filmrahmen montierten flexiblen Films
CN101722470B (zh) * 2009-11-24 2011-09-28 成都东骏激光股份有限公司 一种激光晶体的加工方法
EP2523209B1 (de) 2010-04-23 2017-03-08 EV Group GmbH Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats von einem Trägersubstrat
US8563405B2 (en) 2010-05-06 2013-10-22 Ineffable Cellular Limited Liability Company Method for manufacturing semiconductor device
US8852391B2 (en) 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
US9263314B2 (en) 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
JP2012079936A (ja) * 2010-10-01 2012-04-19 Nitto Denko Corp ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法
EP2650124B1 (en) * 2010-12-09 2019-05-15 Asahi Kasei Kabushiki Kaisha Fine-structure laminate, method for preparing fine-structure laminate, and production method for fine-structure laminate
JP2013008915A (ja) * 2011-06-27 2013-01-10 Toshiba Corp 基板加工方法及び基板加工装置
CN102339780B (zh) * 2011-09-30 2013-07-17 格科微电子(上海)有限公司 晶片的吸附与支撑装置及其衬垫、半导体处理设备
US9390949B2 (en) * 2011-11-29 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer debonding and cleaning apparatus and method of use
US11264262B2 (en) * 2011-11-29 2022-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer debonding and cleaning apparatus
US10381254B2 (en) * 2011-11-29 2019-08-13 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer debonding and cleaning apparatus and method
DE102012001345A1 (de) * 2012-01-24 2013-07-25 Giesecke & Devrient Gmbh Verfahren zum Herstellen eines Datenträgers
JP5591859B2 (ja) * 2012-03-23 2014-09-17 株式会社東芝 基板の分離方法及び分離装置
JP6035468B2 (ja) * 2012-07-03 2016-11-30 アールエフエイチアイシー コーポレイション 半導体−オン−ダイヤモンドウェハのハンドルおよび製造方法
JP5970986B2 (ja) * 2012-07-05 2016-08-17 富士通株式会社 ウエハー基板の製造方法
KR102007042B1 (ko) * 2012-09-19 2019-08-02 도쿄엘렉트론가부시키가이샤 박리 장치
US9331230B2 (en) * 2012-10-30 2016-05-03 Cbrite Inc. LED die dispersal in displays and light panels with preserving neighboring relationship
US9543197B2 (en) * 2012-12-19 2017-01-10 Intel Corporation Package with dielectric or anisotropic conductive (ACF) buildup layer
TWI533034B (zh) * 2013-04-23 2016-05-11 住華科技股份有限公司 軟性彩色濾光片及軟性彩色顯示元件之製造方法
US9013039B2 (en) * 2013-08-05 2015-04-21 Globalfoundries Inc. Wafer support system for 3D packaging
JP6113019B2 (ja) * 2013-08-07 2017-04-12 株式会社ディスコ ウエーハの分割方法
FR3012257A1 (fr) * 2013-10-21 2015-04-24 Soitec Silicon On Insulator Procede de prehension d'un substrat
US9613842B2 (en) 2014-02-19 2017-04-04 Globalfoundries Inc. Wafer handler and methods of manufacture
KR102427159B1 (ko) 2015-11-11 2022-08-01 삼성전자주식회사 테이프 필름의 라미네이션 장치 및 그를 포함하는 반도체 소자의 제조 설비
US9997399B2 (en) * 2016-08-16 2018-06-12 Mikro Mesa Technology Co., Ltd. Method for transferring semiconductor structure
KR102450310B1 (ko) 2017-11-27 2022-10-04 삼성전자주식회사 반도체 칩 및 이를 구비하는 멀티 칩 패키지
US10586725B1 (en) * 2018-01-10 2020-03-10 Facebook Technologies, Llc Method for polymer-assisted chip transfer
US10559486B1 (en) * 2018-01-10 2020-02-11 Facebook Technologies, Llc Method for polymer-assisted chip transfer
JP7282461B2 (ja) * 2019-04-16 2023-05-29 株式会社ディスコ 検査装置、及び加工装置
US11041879B2 (en) 2019-06-06 2021-06-22 International Business Machines Corporation Fluidized alignment of a semiconductor die to a test probe
CN111453997A (zh) * 2020-04-14 2020-07-28 拓米(成都)应用技术研究院有限公司 单面蚀刻制造超薄玻璃的方法及超薄玻璃
CN112105166B (zh) * 2020-09-02 2024-03-29 深圳市鑫达辉软性电路科技有限公司 一种fpc翘曲修复装置
US20220402146A1 (en) * 2021-06-18 2022-12-22 Win Semiconductors Corp. Testing system and method of testing and transferring light-emitting element

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3861978A (en) 1973-03-08 1975-01-21 Western Electric Co Method of joining two bodies after treatment with an inorganic colloid
JPS55160440A (en) 1979-05-31 1980-12-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Device for fixing thin plate
US4339297A (en) * 1981-04-14 1982-07-13 Seiichiro Aigo Apparatus for etching of oxide film on semiconductor wafer
JPS6133831A (ja) * 1984-07-24 1986-02-17 Citizen Watch Co Ltd 真空吸着装置
JPH0694088B2 (ja) 1986-02-20 1994-11-24 株式会社井上ジャパックス研究所 ワイヤカツト放電加工装置
JPS62193725U (zh) * 1986-05-30 1987-12-09
JPS63256342A (ja) 1987-04-10 1988-10-24 Sumitomo Electric Ind Ltd 半導体ウエ−ハの研削方法
JPS63256354A (ja) * 1987-04-14 1988-10-24 Mitsubishi Electric Corp 複合材の高精度研磨方法
JPH01281231A (ja) * 1987-10-22 1989-11-13 Fujitsu Ltd 試料保持装置
JPH01134945A (ja) 1987-11-19 1989-05-26 Tokyo Electron Ltd ウエハ保持装置
JPH01139628A (ja) 1987-11-26 1989-06-01 Nitto Boseki Co Ltd フッ素樹脂補強用ガラス繊維製品
JPH02309638A (ja) 1989-05-24 1990-12-25 Fujitsu Ltd ウエハーエッチング装置
JPH0353546A (ja) * 1989-07-21 1991-03-07 Mitsubishi Electric Corp 半導体装置の製造方法およびその製造装置
US5155068A (en) 1989-08-31 1992-10-13 Sharp Kabushiki Kaisha Method for manufacturing an IC module for an IC card whereby an IC device and surrounding encapsulant are thinned by material removal
DE4002018A1 (de) 1990-01-24 1991-07-25 Helmut K Rohrer Verfahren und vorrichtung zum erleichtern des loesens von elektronischen bauteilen von einer wafer-traegerfolie
JPH03256677A (ja) 1990-03-02 1991-11-15 Sony Corp 薄片吸着保持装置
JPH0567371A (ja) 1991-08-02 1993-03-19 Sony Corp 記録再生装置
JPH0582631A (ja) 1991-09-20 1993-04-02 Toshiba Ceramics Co Ltd 半導体ウエーハ用真空チヤツク
JP2634343B2 (ja) 1991-10-28 1997-07-23 信越化学工業株式会社 半導体ウェーハの保持方法
JPH06177099A (ja) 1992-12-02 1994-06-24 Toshiba Corp 半導体ペレットの薄化方法
US5268065A (en) * 1992-12-21 1993-12-07 Motorola, Inc. Method for thinning a semiconductor wafer
JP3410202B2 (ja) 1993-04-28 2003-05-26 日本テキサス・インスツルメンツ株式会社 ウェハ貼着用粘着シートおよびこれを用いた半導体装置の製造方法
JP3067479B2 (ja) 1993-07-30 2000-07-17 信越半導体株式会社 ウエーハの高平坦度エッチング方法および装置
JPH07106285A (ja) 1993-10-08 1995-04-21 Oki Electric Ind Co Ltd 半導体製造方法
DE4433833A1 (de) * 1994-09-22 1996-03-28 Fraunhofer Ges Forschung Verfahren zur Herstellung einer dreidimensionalen integrierten Schaltung unter Erreichung hoher Systemausbeuten
JP2581017B2 (ja) * 1994-09-30 1997-02-12 日本電気株式会社 半導体装置及びその製造方法
JPH08181092A (ja) 1994-12-26 1996-07-12 Sumitomo Metal Ind Ltd 半導体ウエハ研磨用保持プレート
JP3197788B2 (ja) 1995-05-18 2001-08-13 株式会社日立製作所 半導体装置の製造方法

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US6573158B2 (en) 2003-06-03
US20020048907A1 (en) 2002-04-25
AU729849B2 (en) 2001-02-08
CN1203696A (zh) 1998-12-30
KR19990071818A (ko) 1999-09-27
US6589855B2 (en) 2003-07-08
CA2238974A1 (en) 1997-06-12
AU7144796A (en) 1997-06-27
US6342434B1 (en) 2002-01-29
WO1997021243A1 (en) 1997-06-12
US20020034860A1 (en) 2002-03-21
EP0866494A1 (en) 1998-09-23

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