CN1649162A - 光传感器模块 - Google Patents

光传感器模块 Download PDF

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Publication number
CN1649162A
CN1649162A CNA2005100063069A CN200510006306A CN1649162A CN 1649162 A CN1649162 A CN 1649162A CN A2005100063069 A CNA2005100063069 A CN A2005100063069A CN 200510006306 A CN200510006306 A CN 200510006306A CN 1649162 A CN1649162 A CN 1649162A
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China
Prior art keywords
optical sensor
insulating barrier
distribution
constituting body
sensor module
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Pending
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CNA2005100063069A
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English (en)
Inventor
三原一郎
定别当裕康
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Casio Computer Co Ltd
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Casio Computer Co Ltd
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Publication date
Priority claimed from JP2004018538A external-priority patent/JP4179174B2/ja
Priority claimed from JP2004018540A external-priority patent/JP4089629B2/ja
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Publication of CN1649162A publication Critical patent/CN1649162A/zh
Pending legal-status Critical Current

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Abstract

一种光传感器模块，其中，具备光传感器(35、61、111)，其在上面设置了光电变换器件区域(38、113)和连接于该光电变换器件区域(38、113)的连接衬垫(39、114)；具有多个外部连接用电极(9、16、134、144)的半导体构成体(5、131)；设置在所述半导体构成体(5、131)周围的绝缘层(18、137)；和配线(22、122)，其设置在至少所述半导体构成体(5、131)和所述光传感器(35、61、111)的任一方上，电连接所述光传感器(35、61、111)的连接衬垫(39、114)与所述半导体构成体(5、131)的外部连接用电极(9、16、134、144)。

Description

光传感器模块
技术领域
本发明涉及一种光传感器模块，更具体而言涉及具有驱动用半导体装置的光传感器模块。
背景技术
记载于特开2003-264274号公报中的现有光传感器模块，构成为在具有作为支撑零件功能的板厚厚的硬质电路基板的上面设置有光传感器，在电路基板的下面设置有具有作为光传感器外围驱动电路功能的半导体装置和由电阻或电容器等构成的芯片零件，用密封膜覆盖半导体装置和由电阻或电容器等构成的芯片零件。
但是，在上述现有光传感器模块中，在也作为支撑零件的板厚厚的电路基板的上面设置有光传感器，在电路基板的下面设置有具有作为光传感器外围驱动电路功能的半导体装置和由电阻或电容等构成的驱动用电子零件，在电路基板中形成用于连接光传感器与驱动用电子零件的配线，因此，该部分板厚基本上不能被有效活用，构成整体厚度大的光传感器模块。
发明内容
因此，本发明的目的在于提供一种可薄型化的光传感器模块。
根据本发明，提供一种光传感器模块，其中，具备光传感器35、61、111，其在上面设置有了光电变换器件区域38、113和连接于该光电变换器件区域38、113的连接衬垫39、114；具有多个外部连接用电极9、16、134、144的半导体构成体5、131；设置在所述半导体构成体5、131周围的绝缘层18、137；和配线22、122，其设置在至少所述半导体构成体5、131和所述光传感器35、61、111的任一方上，电连接所述光传感器35、61、111的连接衬垫39、114与所述半导体构成体5、131的外部连接用电极9、16、134、144。
根据本发明，因为在半导体构成体和该半导体构成体周围设置有的绝缘层上的至少一部分中设置有用于电连接光传感器的连接衬垫与半导体构成体的外部连接用电极的配线，所以不必用于装载半导体构成体和光传感器的电路基板，因此，可薄型化光传感器模块整体。
附图说明
图1是作为本发明的第1实施方式的光传感器模块的截面图。
图2是作为本发明的第2实施方式的光传感器模块的截面图。
图3是作为本发明的第3实施方式的光传感器模块的截面图。
图4是作为本发明的第4实施方式的光传感器模块的截面图。
图5是制造包含图3所示的半导体构成体的部分时、最初准备的模块的截面图。
图6是接于图5的工序的截面图。
图7是接于图6的工序的截面图。
图8是接于图7的工序的截面图。
图9是接于图8的工序的截面图。
图10是接于图9的工序的截面图。
图11是接于图10的工序的截面图。
图12是接于图11的工序的截面图。
图13是接于图12的工序的截面图。
图14是接于图13的工序的截面图。
图15是接于图14的工序的截面图。
图16是制造图15所示的光传感器模块时，规定工序的截面图。
图17是接于图16的工序的截面图。
图18是接于图17的工序的截面图。
图19是接于图18的工序的截面图。
图20是制造图1所示的光传感器时，最初准备的模块的截面图。
图21是接于图20的工序的截面图。
图22是接于图21的工序的截面图。
图23是接于图22的工序的截面图。
图24是接于图23的工序的截面图。
图25是接于图24的工序的截面图。
图26是接于图25的工序的截面图。
图27是接于图26的工序的截面图。
图28是接于图27的工序的截面图。
图29是作为本发明的第5实施方式的光传感器模块的截面图。
图30是图29所示的光传感器的制造方法中，最初工序的截面图。
图31是接于图30的工序的截面图。
图32是接于图31的工序的截面图。
图33是接于图32的工序的截面图。
图34是接于图33的工序的截面图。
图35是接于图34的工序的截面图。
图36是接于图35的工序的截面图。
图37是接于图36的工序的截面图。
图38是图29所示的半导体构成体的制造方法中，最初工序的截面图。
图39是接于图38的工序的截面图。
图40是接于图39的工序的截面图。
图41是接于图40的工序的截面图。
图42是接于图41的工序的截面图。
图43是接于图42的工序的截面图。
图44是接于图43的工序的截面图。
图45是接于图44的工序的截面图。
图46是接于图45的工序的截面图。
图47是接于图46的工序的截面图。
图48是为了说明光传感器和半导体构成体的制造方法另一实例而表示的规定工序的截面图。
图49是接于图48的工序的截面图。
图50是用来说明光传感器和半导体构成体的制造方法再一实例而示出的规定工序的截面图。
图中：1-底板，2、69-上面配线，3、74-下面配线，4、23、53、75、82、86、204-外涂层膜，5、131-半导体构成体，6、36、162、172-粘接层，7、37、62、112、132-硅基板(半导体基板)，8、133-集成电路，9、39、64、114、134、203-连接衬垫，10、19、40、65-绝缘膜，12、115、135-保护膜，15、81-配线，16、144-柱状电极(外部连接用电极)，17、145-密封膜，18、67、117、137-绝缘层，18a-绝缘层形成用层，19a-绝缘层形成用薄片，22、52、122、141-配线，27-芯片零件，29-柔性配线板，30-各向异性导电粘接剂，31-薄膜基板，110-光传感器模块，35、61、111-光传感器，37、62-硅基板，38、113-光电变换器件区域，42-接合线，43-密封材料，45、71-玻璃板，46、151-透镜支架，47、152-透镜，48-支撑筒，56、79、84-上下导通部，57、85-导电材料，77、124、143-焊锡孔，78-连接端子，95、96-加热加压板，123、142-贯穿电极，161、171-支撑板，173-切割线(切断线)，201-电路基板，202-绝缘基板
具体实施方式
(第1实施方式)
图1表示作为本发明的第1实施方式的光传感器模块的截面图。该光传感器模块备有由玻璃布原料环氧树脂等构成的平面方形的底板1。在底板1的上面设置有由铜箔构成的上面配线2，下面设置有由铜箔构成的下面配线3。此时，上面配线2是由β图案构成的接地层(噪声屏蔽层)，下面配线3是通常的配线。在包含下面配线3的底板1的下面设置有由焊料抗蚀剂等构成的涂层膜4。
在上面配线2上面的规定部位，经由接合材料构成的粘接层来粘接着尺寸比底板1的尺寸小一些的平面方形的半导体构成体5的下面。此时，半导体构成体5具有作为后述光传感器35的外围驱动电路的功能，具有后述的配线15、柱状电极(外部连接用电极)16、密封膜17，通常称为CSP(chip size package)，尤其是如后所述，由于采用在硅晶片上形成配线15、柱状电极16、密封膜17之后、利用切片来得到各个半导体构成体5的方法，所以也特别称作晶片级CSP(W-CSP)。下面，说明半导体构成体5的构成。
半导体构成体5具备硅基板(半导体基板)7。硅基板7的下面经粘接层6粘接于底板1的上面。在硅基板7的上面中央部设置有规定功能的集成电路8，在上面外围部连接于集成电路8上设置有由铝类金属等构成的多个连接衬垫9(外部连接用电极)。去除连接衬垫9的中央部的硅基板7的上面，设置由氧化硅等构成的绝缘膜10，经已设置在绝缘膜10中的开口部11使连接衬垫9的中央部露出。
在绝缘膜10的上面设置有由环氧类树脂或聚酰亚胺类树脂等构成的保护膜12。此时，在对应于绝缘膜10的开口部11的部分中的保护膜12中设置有开口部13。在保护膜12的上面设置有由铜等构成的基底金属层14。在基底金属层14的整个上面设置有由铜构成的配线15。将包含基底金属层14的配线15的一端部经两开口部11、13连接于连接衬垫9上。
在配线15的连接衬垫部上面设置有由铜构成的柱状电极(外部连接用电极)16。在包含配线15的保护膜12的上面设置有由环氧类树脂或聚酰亚胺类树脂等构成的密封膜17，以使其上面变得与柱状电极16的上面齐平面。这样，称为W-CSP的半导体构成体5构成为包含硅基板7、集成电路8、连接衬垫9、绝缘膜10，还包含保护膜12、配线15、柱状电极16、密封膜17。
在半导体构成体5周围的上面配线2的上面设置有方形框状的绝缘层18，使其上面变得与半导体构成体5的上面大致齐平面。绝缘层18例如由环氧类树脂或聚酰亚胺类树脂等热固化树脂、或在这种热固化树脂中混入由硅质填料或玻璃纤维等构成的加强材料的树脂来构成。
在半导体构成体5和绝缘层18的上面，使其上面平坦地设置有绝缘膜19。绝缘膜19由用于增强(build up)基板中的通常称为增强材料的、例如在环氧类树脂或BT(Bismaleimide Triazine)树脂等热固化性树脂中混入由硅质填料或玻璃纤维等构成的加强材料的树脂来构成。
在对应于柱状电极16的上面中央部的部分中的绝缘膜19中设置有开口部20。在绝缘膜19的上面设置有由铜等构成的基底金属层21。在基底金属层21的整个上面设置有由铜层和形成于该铜层上面的由金属构成的配线22。包含基底金属层21的配线22经绝缘膜19的开口部30连接于柱状电极16的上面。
在包含配线22的绝缘膜19的上面，设置有由焊料抗蚀剂等构成的外涂层膜23。在配线22的对应于第1、第2连接衬垫部和外部连接端子的部分中的外涂层膜23中设置有第1～第3开口部24～26。另外，配线22的金层仅设置在作为后述的引线接合的区域的、从第1开口部24露出的部分中，此外的部分仅由铜层构成即可。
在以一对为一组的第2开口部25之间的外涂层膜23的上面设置有由电阻或电容器等构成的芯片零件27。芯片零件27的两侧电极经焊锡28连接于经以一对为一组的第2开口部25露出的配线22的第2连接衬垫部上。
在经第3开口部26露出的配线22的外部连接端子上，经各向异性导电粘接剂30来接合柔性配线板29的一端部。柔性配线板29构成为在薄膜基板31的下面设置配线32，在去除配线32的两端部的薄膜基板31的下面设置由焊料抗蚀剂等构成的涂层膜33，而配线32的两端部经设置在涂层膜33中的开口部34(一方未图示)露出。另外，经柔性配线板29的开口部34露出的配线32的一端部，经各向异性导电粘接剂30连接于经第3开口部26露出的配线22的外部连接端子上。
平面方形的光传感器35的下面经由芯片粘合(die bond)材料构成的粘接层36粘接于外涂层膜23上面的规定部位。光传感器35备有硅基板(半导体基板)37。硅基板37的下面经粘接层36粘接于外涂层膜23的上面。在硅基板37的上面中央部设置包含CCD(电荷耦合元件)或光电二极管、光电晶体管等元件的光电变换器件区域38，在上面外围部，虽未图示，但由连接用配线连接于光电变换器件区域38来设置有由铝类金属等构成的多个连接衬垫39。
在去除连接衬垫39中央部的硅基板37的上面设置有由氧化硅等构成的绝缘膜40，连接衬垫39的中央部经形成于绝缘膜40中的开口部41露出。另外，光传感器35的连接衬垫39经由金构成的接合线42，连接于经外涂层膜23的第1开口部24露出的配线22的第1连接衬垫部上。
在包含光传感器35外围部和接合线42的外涂层膜23的上面规定部位，设置有由环氧类树脂或聚酰亚胺类树脂等构成的密封材料43。此时，将经隔板44配置在光传感器35上面的紫外线截断用的玻璃板45固定在密封材料43的上面侧。玻璃板45除截断紫外线的功能外，还具有作为保护光传感器35的光电变换器件区域38的密封材料的功能。
在玻璃板45和密封材料43的外侧配置有透镜支架46。在透镜支架46上可旋转地装配着支撑配置在玻璃板45上方的透镜47的支撑筒48。这里，芯片零件27被配置在包含光传感器35的透镜支架46周围的外涂层膜23的上面。
如上所述，这里，在具有作为光传感器35外围驱动电路功能的半导体构成体5周围的底板1的上面设置绝缘层18，在半导体构成体5和绝缘层18上设置配线22，在覆盖配线22的外涂层膜23上设置有光传感器35，所以不必用于装载半导体构成体5和光传感器35的电路基板，因此，可以薄型化光传感器模块。另外，由于将芯片零件27配置在包含光传感器35的透镜支架46周围的外涂层膜23的上面，所以即使备有芯片零件27，模块整体也不会变厚。这里，不是限定含义，但当示例各零件的厚度时，硅基板7的厚度为0.2～0.4mm，柱状电极16的高度为0.05～0.15mm，半导体构成体5的厚度为0.25～0.55mm，底板1、绝缘膜19、外涂层膜23的厚度分别为0.05～0.1mm，从最下面的涂层膜4的下面至最上层的外涂层膜23的上面的厚度、即去除光传感器35的驱动用半导体组件整体的厚度为0.6～0.8mm。即，可将去除透镜47、支撑筒48和透镜支架46等机构零件的光传感器模块的厚度设为1mm以下。
(第2实施方式)
图2表示作为本发明的第2实施方式的光传感器模块的截面图。在该光传感器模块中，与图1所示的情况大不相同之处在于，将去除光传感器35和透镜支架46的部分的部分、即底板1、半导体构成体5和绝缘层18的部分的上下颠倒，并且，具有电连接朝向与配置光传感器15的面相反面侧的半导体构成体5的柱状电极16与光传感器35的连接衬垫39的上下导通部56。另外，未设置有图1所示的上面配线2、下面配线3和隔板4。
图2中，在底板1的下面，经粘接层6粘接半导体构成体5。在半导体构成体5周围的底板1的下面设置有绝缘层18。在半导体构成体5和绝缘层18的下面，经绝缘膜19设置有包含基底金属层21的配线22。在外涂层膜23的下面设置有芯片零件27和柔性配线板29。
在底板1的上面设置有由铜等构成的基底金属层51。在基底金属层51的整个上面设置有由铜构成的配线52。此时，具有设置了在半导体构成体5上的隔板1的上面的基底金属层51的配线52构成由β图案构成的接地层(噪声屏蔽层)。
在包含配线52的底板1的上面，设置有由焊料抗蚀剂等构成的外涂层膜53。在对应于配线52的连接衬垫部的部分中的外涂层膜53中设置有开口部54。另外，经接合线42，将光传感器35的连接衬垫39连接于经外涂层膜53的开口部54露出的配线52的连接衬垫部上。
包含基底金属层51的配线52的一部分与包含基底金属层21的配线22的一部分，经设置在底板1、绝缘层18和绝缘膜19规定部位中所设置的贯穿孔55内壁面的由铜等构成的基底金属层56a和铜层56b所构成的上下导通部56被连接。此时，为了使上下配线的电导通良好，在上下导通部56中填充由铜胶、银胶、导电性树脂等构成的导电材料57，但也可以填充绝缘性树脂，另外，也可以是空洞。
另外，通过锪孔等加工方法，在去除玻璃板45下面周围部的部分中设置有凹部45a。之后，将玻璃板45的下面周围部配置在光传感器35的上面。另外，在外涂层膜23的下面，除芯片零件27外，还设置有由裸芯片构成的半导体芯片58。经焊锡孔60将半导体芯片58的连接衬垫59连接于配线22的连接衬垫部上。所谓裸芯片是切割形成半导体集成电路的晶片后得到的状态的半导体芯片，或在形成这种半导体装置的集成电路的周围形成保护膜的半导体芯片，是指没有引线框。
(第3实施方式)
图3表示作为本发明第3实施方式的光传感器模块的截面图。在该光传感器模块中，与图1所示情况大不相同之处在于，经焊锡孔77将后述构成的光传感器61连接于配线22的连接衬垫部上，将芯片零件27配置在底板上，埋入绝缘层18内，具有电连接芯片零件27与配线22的上下导通部84。此时，未设置有图1所示的上面配线2和下面配线3。在本实施方式的情况下，由于通过焊锡孔77连接于光传感器61上，所以不必在配线22中形成金属，整体仅为铜层即可。
下面，说明光传感器61的结构。光传感器61备有硅基板(半导体基板)62。在硅基板62的上面中央部，设置有包含CCD(电荷耦合元件)或光电二极管、光电晶体管等元件的光电变换器件区域63，在上面外围部，连接于光电变换器件区域63来设置有由铝类金属等构成的多个连接衬垫64。
在去除连接衬垫64中央部的硅基板62的上面，设置由氧化硅等构成的绝缘膜65，连接衬垫64的中央部经形成于绝缘膜65中的开口部66而露出。在硅基板62的下面及其周围设置有由环氧类树脂或聚酰亚胺类树脂等构成的绝缘层67。此时，硅基板62周围设置的绝缘层67的上面与硅基板62的上面设置的绝缘膜65的上面大致齐平面。
在绝缘膜65、67的上面设置有由铜等构成的基底金属层68。在基底金属层68的整个上面设置有由铜构成的上面配线69。包含基底金属层68的上面配线69的一端部经绝缘膜65的开口部66连接于连接衬垫64上。在包含上面配线69的绝缘膜65、67的上面，经由透明环氧类树脂等构成的透明粘接层70，设置有紫外线截断用的玻璃板71。
在对应于上面配线69的连接衬垫部的部分中的绝缘层67中，设置有开口部72。在绝缘层67的下面，设置有由铜构成的基底金属层73。在基底金属层73的整个下面设置有由铜构成的下面配线74。基底金属层73和下面配线74构成沿绝缘层67的厚度方向贯穿的贯穿电极，经该贯穿电极电连接于下面配线74和上面配线69上。在包含下面配线74的绝缘层67的下面，设置有由焊锡抗蚀剂等构成的涂层膜75。
在对应于下面配线74的连接衬垫部的部分中的涂层膜75中，设置有开口部77。在开口部77和其下方，连接于下面配线74的连接衬垫部，设置有焊锡孔77。另外，光传感器61通过将其焊锡孔77连接于经外涂层膜23的开口部24露出的配线22的连接衬垫部上，被半截于外涂层膜23上。
下面，说明芯片零件27等。在底板1上面的规定部位，设置有由铜箔构成的一对连接端子78。在一对连接端子78下的底板1中设置的贯穿孔内，连接于连接端子78，设置有由铜胶、银胶、导电性树脂等构成的上下导通部79。在一对连接端子78的上面，经焊锡28连接芯片零件27两侧的电极。另外，将包含焊锡28的芯片零件27埋入绝缘层18内。
在底板1的下面，设置有由铜等构成的基底金属层80。在基底金属层80的整个下面设置有由铜构成的配线81。将包含基底金属层80的配线81的一端部连接于上下导通部79上。在包含配线81的底板1的整个下面设置有由焊锡抗蚀剂等构成的涂层膜82。
经设置在底板1、绝缘层18和绝缘膜19的规定部位中设置的贯穿孔83的内壁面中的由铜等构成的基底金属层84a与铜层84b所构成的上下导通部84，连接着包含基底金属层80的配线81与包含基底金属层21的配线22的一部分。此时，为了使上下配线的电导通良好，上下导通部84内填充由铜胶、银胶、导电性树脂等构成的导电材料85，但也可以填充绝缘性树脂，或者为空洞。
另外，在该光传感器模块中，由于去除在半导体构成体5周围的底板1上设置了的绝缘层18内的上下导通部84的部分为静区，所以若在该静区内的底板1上设置芯片零件27，则可以有效利用空间。
(第4实施方式)
图4表示作为本发明的第4实施方式的光传感器模块的截面图。在该光传感器模块中，与图1所示的情况大不相同之处在于，不层叠半导体构成体5和光传感器35，平面地排列配置在底板1上。此时，没有设置图1所示的上面配线2、下面配线3和涂层膜4。
即，半导体构成体5经粘接层6粘接于底板1上面的规定部位，光传感器35经粘接层36粘接于其它规定部位。此时，半导体构成体5构成为不具有图1所示的柱状电极16和密封膜17，在包含配线15的保护膜12的上面设置有涂层膜86。
另外，包含基底金属层21的配线22经设置在绝缘膜19等中的开口部20连接于半导体构成体5的配线15的连接衬垫部和光传感器35的连接衬垫39上。这里，绝缘层18、绝缘膜19和外涂层膜23由透明的环氧类树脂等构成。另外，在去除玻璃板45下面周边部的部分中，通过锪孔等加工方法设置有凹部45a。另外，在外涂层膜23的上面配置玻璃板45的下面周边部。可将第4实施方式所示的半导体构成体5适用于作为第1～第3实施方式表示的光传感器模块中。
下面，作为代表，为了说明图3所示的光传感器模块的一部分的制造方法一例，首先说明半导体构成体5的制造方法的一例。此时，首先如图5所示，准备如下器件，在晶片状态的硅基板(半导体基板)7上，设置集成电路8、由铝类金属等构成的连接衬垫9、由氧化硅等构成的绝缘膜10和由环氧类树脂或聚酰亚胺类树脂等构成的保护膜12，经形成于绝缘膜10和保护膜12中的开口部11、13露出连接衬垫9的中央部。
接着，如图6所示，在包含经两开口部11、13露出的连接衬垫9上面的保护膜12的整个上面，形成基底金属层14。此时，基底金属层14可以仅是由无电解电镀形成的铜层，或是仅由溅射形成的铜层，或是在由溅射形成的钛等薄膜层上通过溅射形成铜层的金属层。
接着，在基底金属层14的上面图案形成电镀抗蚀剂膜91。此时，在对应于配线15形成区域的部分中的电镀抗蚀剂膜91中，形成开口部92。接着，通过将基底金属层14作为电镀电流路径，进行铜的电解电镀，在电镀抗蚀剂膜91的开口部92内的基底金属层14的上面形成配线15。之后，剥离电镀抗蚀剂膜91。
之后，如图7所示，在包含配线15的基底金属层14的上面，图案形成电镀抗蚀剂膜93。此时，在对应于柱状电极16形成区域的部分中的电镀抗蚀剂膜93中形成开口部94。之后，通过将基底金属层14作为电镀电流路径进行铜的电解电镀，在电镀抗蚀剂膜93的开口部94内的配线15的连接衬垫部上面，形成柱状电极16。之后，剥离电镀抗蚀剂膜93，然后，当将配线15作为掩膜并蚀刻去除基底金属层14的无用部分时，如图8所示，仅在配线15的下面残留基底金属层14。
接着，如图9所示，通过网版印刷法、旋涂法、脱膜(die coat)法等，在包含柱状电极16和配线15的保护膜12的整个上面形成由环氧类树脂或聚酰亚胺类树脂等构成的密封膜17，使其厚度比柱状电极16的高度厚。因此，在该状态下，柱状电极16的上面被密封膜17所覆盖。
之后，适当研磨密封膜17和柱状电极16的上面侧，如图10所示，使柱状电极16的上面露出，并且，平坦化包含该露出的柱状电极16上面的密封膜17的上面。这里，适当研磨柱状电极16的上面侧是由于通过电解电镀形成的柱状电极16的高度有差异，所以为了消除该差异，使柱状电极16的高度均匀。
之后，如图11所示，在硅基板7的整个下面粘接粘接层6。粘接层6由环氧类树脂、聚酰亚胺类树脂等芯片粘合材料构成，通过加热加压，以半固化的状态固定在硅基板7上。之后，将固定在硅基板7上的粘接层6粘贴于切割带(未图示)上，在经过图12所示的切割工序之后，从切割带上剥离时，如图3所示，得到多个在硅基板7的下面具有粘接层6的半导体构成体5。
之后，说明使用如此得到的半导体构成体5来制造包含图3所示的半导体构成体5的部分的方法一例。首先，如图13所示，在可采取多个图3所示的底板的大小下，虽然不是限定含义，但准备平面形状为方形的底板1。
此时，在底板1上面的规定部位设置由铜箔构成的一对连接端子78，在一对连接端子78下的底板1中设置的贯穿孔内，连接于连接端子78设置有由铜胶、银胶、导电性树脂等构成的上下导通部79。
之后，在底板1上面的规定的多个部位，分别粘接被粘接于半导体构成体5的硅基板7下面的粘接层6。这里的粘接通过加热加压，使粘接层6固化。接着，经焊锡28将由电容或电阻等构成的芯片零件27两侧的电极连接于一对连接端子78的上面，从而，将芯片零件27配置在底板1上面的规定部位上。另外，也可以在配置芯片零件27之后，配置半导体构成体5。
之后，如图14所示，通过网版印刷法或旋涂法等，在半导体构成体5周围的、包含芯片零件27和焊锡28的底板1的上面，形成绝缘层形成用层18a。绝缘层形成用层18a是例如由环氧类树脂或聚酰亚胺类树脂等热固化性树脂、或在这种热固化性树脂中混入由硅质填料或玻璃纤维等构成的加强材料来形成的。
之后，在半导体构成体5和绝缘层形成用层18a的上面，配置绝缘膜形成用薄片19a。绝缘膜形成用薄片19a尽管不是限定含义，但最好是薄片状的增强材料，作为该增强材料，如在环氧类树脂等热固化性树脂中混入硅质填料，将热固化性树脂变为半固化状态来形成。
另外，作为绝缘膜形成用薄片19a，也可以使用将环氧类树脂等热固化性树脂含浸在玻璃布中，将热固化性树脂变为半固化状态，形成薄片状的半固化片材料，或使用不混入硅质填料，仅由半固化状态的热固化性树脂构成的薄片状材料。
接着，如图15所示，使用一对加热加压板95、96，从上下加热加压绝缘层形成用层18a和绝缘膜形成用薄片19a。此时，在半导体构成体5周围的、包含芯片零件27和焊锡28的底板1的上面形成绝缘层18，在半导体构成体5和绝缘层18的上面形成绝缘膜19。此时，绝缘膜19的上面由于通过上侧加热加压板95的下面压接，所以变为平坦面。因此，不需要平坦化绝缘膜19上面用的研磨工序。
接着，如图16所示，通过照射激光束的激光加工，在对应于柱状电极16上面中央部的部分中的绝缘膜19中形成开口部20。另外，使用机械钻眼，在绝缘膜19、绝缘层18和底板1的规定部位，形成贯穿孔83。之后，必要时，通过消拖尾(desmear)处理来去除在开口部20内和贯穿孔83内等产生的环氧污迹等。
之后，如图17所示，在包含经开口部20露出的柱状电极16上面的绝缘膜19的整个上面、包含上下导通部83下面的底板1的整个下面和贯穿孔83的内壁面中，通过铜的无电解电镀，形成基底金属层21、80、84a。接着，在基底金属层80的下面图案形成电镀抗蚀剂膜98。此时，在对应于配线22形成区域的部分中的电镀抗蚀剂膜97中形成有开口部99。另外，在对应于配线81形成区域的部分中的电镀抗蚀剂膜98中形成有开口部100。
之后，通过将基底金属层21、80、84a作为电镀电流路径进行铜的电解电镀，在电镀抗蚀剂膜97的开口部99内的基底金属层21的上面形成配线22，另外，在电镀抗蚀剂膜98的开口部100内的基底金属层80的下面形成配线81，并且，在贯穿孔83内的基底金属层84a的表面形成铜层84b。
之后，剥离两个电镀抗蚀剂膜97、98，然后，将配线22、81作为掩膜，蚀刻去除基底金属21、80的无用部分时，如图18所示，仅在配线22下残留基底金属层21，另外，仅在配线81下残留基底金属层80。另外，在该状态下，在贯穿孔83内形成有由基底金属层84a和铜层84b构成的上下导通部84。
接着，如图19所示，通过网版印刷法等，在上下导通部84内，填充由铜胶、银胶、导电性树脂等构成的导电材料85。接着，必要时，通过半研磨等去除从上下导通部84内突出的多余的导电材料85。然后，通过网版印刷法或旋涂法等，在包含配线22的绝缘膜19的上面，形成由焊料抗蚀剂等构成的外涂层膜23。此时，在对应于配线22的连接衬垫部和外部连接端子的部分中的外涂层膜23中，形成有开口部24、26。另外，在包含配线81的底板1的整个下面，形成由焊锡抗蚀剂等构成的涂层膜82。
之后，当在相互邻接的半导体构成体5之间，切断外涂层膜23、绝缘膜19、绝缘层18、底板1和涂层膜82时，得到多个包含图3所示半导体构成体5的部分。
下面，说明图3所示的光传感器61的制造方法的一例。首先，如图20所示，准备如下器件，其在晶片状态的硅基板(半导体基板)62上设置光电变换器件区域63、铝类金属等构成的连接衬垫64和氧化硅等构成的绝缘膜65，连接衬垫64的中央部经形成于绝缘膜65中的开口部66露出。
之后，如图21所示，在包含经开口部66露出的连接衬垫64上面的绝缘膜65的整个上面，通过铜的无电解电镀等，形成基底金属层68。之后，在基底金属层68的上面，图案形成电镀抗蚀剂膜101。此时，在对应于上面配线69形成区域的部分中的电镀抗蚀剂膜101中，形成有开口部102。
之后，通过将基底金属层68作为电镀电流路径进行铜的电解电镀，在电镀抗蚀剂膜101的开口部102内的基底金属层68的上面，形成上面配线69。之后，剥离电镀抗蚀剂膜101，然后，当将上面配线69作为掩膜并蚀刻去除基底金属层68的无用部分时，如图22所示，仅在上面配线69下残留基底金属层68。
接着，如图23所示，在包含上面配线69的绝缘膜65的整个上面，经由透明环氧类树脂等构成的透明粘接层70，粘接玻璃板71。然后，如图24所示，通过切割或蚀刻等，去除不对应于晶片状态的硅基板62中图3所示硅基板62的无用部分和其上的绝缘膜65。因此，在该状态下，露出配置于硅基板62周围的基底金属层68和透明粘接层70的下面，该露出面与绝缘膜65的上面大致呈齐平面。
接着，如图25所示，通过网版印刷法或旋涂法等，在包含配置在硅基板62周围的基底金属层68和透明粘接层70的硅基板62的下面，形成由环氧类树脂或聚酰亚胺类树脂等构成的绝缘层67。此时，在包含基底金属层68的上面配线69的连接衬垫部所对应的部分中的绝缘层67中形成有开口部72。
之后，通过铜的无电解电镀等，在包含含有经开口部72露出的基底金属层68的上面配线69的连接衬垫部的绝缘层67的整个下面，形成基底金属层73。然后，在基底金属层73的下面图案形成电镀抗蚀剂膜103。此时，在对应于下面配线74形成区域的部分中的电镀抗蚀剂膜103中，形成开口部104。
之后，通过将基底金属层73作为电镀电流路径进行铜的电解电镀，在电镀抗蚀剂膜103的开口部104内的基底金属层73的下面，形成下面配线74。之后，剥离电镀抗蚀剂膜103，然后，当将下面配线74作为掩膜并蚀刻去除基底金属层73的无用部分时，如图26所示，仅在下面配线74上残留基底金属层73。
之后，如图27所示，通过网版印刷法或旋涂法等，在包含下面配线74的绝缘层67的下面，形成由焊锡抗蚀剂等构成的涂层膜75。此时，在对应于下面配线74的连接衬垫部的部分中的涂层膜75中，形成开口部76。之后，连接于下面配线74的连接衬垫部，在开口部76内和其下方形成焊锡孔77。
之后，如图28所示，在相互邻接的硅基板62之间，当切断玻璃板71、透明粘接层70、绝缘层67和涂层膜75时，得到多个图3所示的光传感器61。另外，在上述各实施方式中，将光传感器说明为是在半导体基板上形成光电变换器件区域，但光传感器也可以使用由半导体薄膜在绝缘基板上形成光电变换元件来形成的器件。另外，说明连接半导体构成体与光传感器的配线22仅为1层的情况，但形成于半导体构成体上的配线也可以夹持夹层绝缘膜来设置多层。另外，覆盖配线22的外涂层膜23为焊锡抗蚀剂，但也可以是增强材料等其它材料，并且，也可以不是通过网印或涂布等来成膜，而是通过热压接来粘接事先形成薄片状的分散玻璃纤维等的绝缘树脂薄片。
(第5实施方式)
图29求出作为本发明的第5实施方式的光传感器模块的截面图。在本实施方式中，在电路基板201上安装有光传感器模块110。电路基板201构成为在由玻璃布原料环氧树脂等构成的绝缘基板202的上面设置由铝类金属等构成的多个连接衬垫3，在去除连接衬垫203的中央部的绝缘基板202的上面设置由焊锡抗蚀剂等构成的涂层膜204，连接衬垫203的中央部经设置在涂层膜204中的开口部205而露出。
光传感器模块110备有光传感器111和具有作为该光传感器111的外围驱动电路功能的半导体构成体131。首先，说明光传感器111的构成。光传感器111备有硅基板(半导体基板)112。在硅基板112的上面中央部设置有包含CCD(电荷耦合元件)或光电二极管、光电晶体管等元件的光电变换器件区域113，在上面周边部，连接于光电变换器件区域113来设置有由铝类金属等构成的多个连接衬垫114。
在去除连接衬垫14的中央部的硅基板112的上面，设置由氧化硅等构成的保护膜115，连接衬垫114的中央部经形成于保护膜115中的开口部116而露出。在保护膜115的上面和硅基板112的周围，设置有由环氧类树脂或聚酰亚胺类树脂等构成的绝缘层117。此时，在比硅基板112的周侧面还靠外侧设置的绝缘层117的下面与硅基板112的下面呈齐平面。
在对应于光电变换器件区域113的部分中的绝缘层17中设置有开口部18。在对应于保护膜115的开口部116的部分中的绝缘层117中设置有开口部119。在设置在比硅基板112的周侧面还靠外侧的绝缘层117的规定部位设置有贯穿孔120。
在绝缘层117的上面，设置有由铜等构成的基底金属层121。在基底金属层121的整个上面，设置有由铜构成的配线122。包含基底金属层121的配线122的一端部经保护膜115的开口部119连接于连接衬垫114上。包含基底金属层121的配线122的另一端部一体连接于由设置在保护膜115的贯穿孔120内的基底金属层123a与铜层123b构成的贯穿电极123上。此时，贯穿电极123的下面与绝缘层117的下面呈齐平面。在贯穿电极123的下面设置有焊锡孔124。
下面，说明半导体构成体131的构成。半导体构成体131备有硅基板(半导体基板)132。在硅基板132的上面中央部设置有规定功能的集成电路133，在上面周边部，连接于集成电路133来设置有由铝类金属等构成的多个连接衬垫134(外部连接用电极)。在去除连接衬垫134的中央部的硅基板132的上面，设置有由氧化硅等构成的保护膜135，连接衬垫134的中央部经设置在保护膜135中的开口部136而露出。
在保护膜135的上面和硅基板132的周围设置有由环氧类树脂或聚酰亚胺类树脂等构成的绝缘层137。此时，设置在比硅基板132的周侧面还靠外侧的绝缘层137的下面与硅基板132的下面呈齐平面。在对应于保护膜135的开口部136的部分中的绝缘层137中设置有开口部138。在设置在比硅基板132的周侧面还靠外侧的绝缘层137的规定部位设置有贯穿孔139。
在绝缘层137的上面设置有由铜等构成的基底金属层140。在基底金属层140的整个上面设置有由铜构成的配线141。包含基底金属层140的配线141的一端部经第1绝缘层135、137的开口部136、138连接于连接衬垫134上。包含基底金属层140的配线141的一部分的另一端部一体连接于设置在绝缘层137的贯穿孔139内的基底金属层142a与铜层142b所构成的贯穿电极142上。此时，贯穿电极142的下面与绝缘层137的下面呈齐平面。在贯穿电极142的下面设置有焊锡孔143。
在配线141的一部分的连接衬垫部上面设置有由铜构成的柱状电极(外部连接用电极)144。在包含柱状电极(外部连接用电极)144和配线141的绝缘层137的上面及其周围，设置有由环氧类树脂或聚酰亚胺类树脂等构成的密封膜145，使其上面与柱状电极144的一面呈齐平面。此时，设置在绝缘层137周围侧面外侧的密封膜145的下面与绝缘层137的下面呈齐平面。
另外，通过将焊锡孔124接合在半导体构成体131的柱状电极144的上面，将光传感器111安装在半导体构成体131上。另外，通过将半导体构成体131的焊锡孔143接合在电路基板201的连接衬垫203上，将由光传感器111和半导体构成体131构成的光传感器110安装在电路基板201上。
在光传感器111周围的半导体构成体131的密封膜145的上面配置有透镜支架151。在透镜支架151上可转动地装配着支撑配置在光传感器111的光电变换器件区域113上方的透镜152的支撑筒153。在透镜支架151内，在光传感器111与透镜152之间设置有红外线吸收滤波器154。
下面，说明由光传感器111与半导体构成体131构成的光传感器模块110的制造方法一例。首先，说明光传感器111的制造方法一例。首先，如图30所示，准备如下器件，其在紫外线透过性玻璃板、透明金属板、透明树脂板等构成的支撑板161的上面设置有粘接力由于照射紫外线而降低的粘接层162。
接着，在粘接层162上面的规定的多个部位分别粘接硅基板112的下面。此时，在硅基板112上设置光电变换器件区域113、由铝类金属等构成的连接衬垫114和由氧化硅等构成的保护膜115，连接衬垫114的中央部经形成于保护膜115中的开口部116而露出。
接着，如图31所示，在包含保护膜115的粘接层162的上面，通过网版印刷法或旋涂法等，形成由环氧类树脂或聚酰亚胺类树脂等构成的绝缘层117。此时，在对应于保护膜115的开口部116的部分中的绝缘层117中形成有开口部119。另外，在设置了于硅基板112周侧面外侧上的绝缘层117的规定部位形成有贯穿孔120。
接着，如图32所示，在包含经两开口部116、119露出的连接衬垫114的上面和经贯穿孔120露出的粘接层162的上面的绝缘层117的整个上面形成基底金属层121。此时，基底金属层121可以仅是由无电解电镀形成的铜层，或是仅由溅射形成的铜层，或是在由溅射形成的钛等薄膜层上通过溅射形成铜层的金属层。
接着，在基底金属层121的上面图案形成电镀抗蚀剂膜163。此时，在对应于配线122形成区域的部分中的电镀抗蚀剂膜163中，形成有开口部164。接着，通过将基底金属层121作为电镀电流路径，进行铜的电解电镀，在电镀抗蚀剂膜163的开口部164内的基底金属层121的上面形成配线122。
之后，剥离电镀抗蚀剂膜163。然后，当将配线122作为掩膜并蚀刻去除基底金属层121的无用部分时，如图33所示，仅在配线122的下面残留基底金属层121。另外，在该状态下，在贯穿孔121内形成有由基底金属层123a和铜层123b构成的贯穿电极123。
接着，如图34所示，通过光刻法，在对应于光电变换器件区域113的部分中的绝缘层117中形成开口部118。另外，开口部118也可以在图31所示工序中形成。接着，从支撑板161的下面侧照射紫外线，使粘接层162的粘接力降低，当剥离支撑板161和粘接层162时，变为图35所示。
在该状态下，形成于硅基板112周侧面外侧上的绝缘层117的下面和形成于贯穿孔120内的贯穿电极123的下面与硅基板112的下面呈齐平面。之后，在形成于贯穿孔120内的贯穿电极123的下面附着粘接剂的情况下，利用等离子体蚀刻等去除。
接着，如图36所示，在形成于贯穿孔120内的贯穿电极123的下面，形成焊锡孔124。之后，如图37所示，当在相互邻接的硅基板112之间切断绝缘层117时，如图1所示，得到多个在硅基板112的周侧面外侧具有贯穿电极123的光传感器111。
下面，说明半导体构成体131的制造方法一例。首先，如图38所示，准备如下器件，其在紫外线透过性玻璃板、透明金属板、透明树脂板等构成的支撑板171的上面，设置有利用照射紫外线来降低粘接力的粘接层172。另外，图38中，符号173所示区域是对应于切割线(切断线)的区域。
接着，在粘接层172上面的规定的多个部位分别粘接硅基板132的下面。此时，在硅基板132上设置集成电路、由铝类金属等构成的连接衬垫134和由氧化硅等构成的保护膜135，连接衬垫134的中央部经形成于保护膜135中的开口部136而露出。
接着，如图39所示，在包含保护膜135的粘接层172的上面，通过网版印刷法或旋涂法等，形成由环氧类树脂或聚酰亚胺类树脂等构成的绝缘层137。此时，在对应于保护膜135的开口部136的部分中的绝缘层137中形成有开口部138。另外，在设置于硅基板132周侧面的外侧的绝缘层137的规定部位形成有贯穿孔139。并且，在切割线173和其两侧的区域中的绝缘层137中形成有贯穿孔174。
之后，如图40所示，在包含经两开口部136、38露出的连接衬垫134的上面和经贯穿孔139、174露出的粘接层172的上面的绝缘层137的整个上面，通过铜的无电解电镀等，形成基底金属层140。接着，在基底金属层140的上面，图案形成电镀抗蚀剂膜175。此时，在对应于配线141形成区域的部分中的电镀抗蚀剂膜175中形成开口部176。之后，通过将基底金属层140作为掩膜来进行铜的电解电镀，在电镀抗蚀剂膜175的开口部176内的基底金属层140的上面形成配线141。之后，剥离电镀抗蚀剂膜175。
之后，如图41所示，在包含配线141的基底金属层140的上面图案形成电镀抗蚀剂膜177。此时，在对应于柱状电极144形成区域的部分中的电镀抗蚀剂膜177中形成有开口部178。然后，通过将基底金属层140作为电镀电流路径来进行铜的电解电镀，在电镀抗蚀剂膜177的开口部179内的配线141的连接衬垫部上面形成柱状电极144。
之后，剥离电镀抗蚀剂膜177，接着，当将配线141作为掩膜并蚀刻去除基底金属层140的无用部分时，如图42所示，仅在下面配线141下残留基底金属层140。另外，在该状态下，在贯穿孔139内形成由基底金属层142a和铜层142b构成的贯穿电极142。
之后，如图43所示，通过网版印刷法、旋涂法、脱膜(die coat)法等，在包含柱状电极144和配线141的保护膜112的整个上面和经贯穿孔174露出的粘接层172的上面，形成由环氧类树脂或聚酰亚胺类树脂等构成的密封膜，45，使其厚度比柱状电极144的高度厚。因此，在该状态下，柱状电极144的上面被密封膜145所覆盖。
之后，适当研磨密封膜145和柱状电极144的上面侧，如图44所示，使柱状电极144的上面露出，并且，平坦化包含该露出的柱状电极144上面的密封膜145的上面。这里，适当研磨柱状电极144的上面侧是由于通过电解电镀形成的柱状电极144的高度有差异，所以为了消除该差异，使柱状电极144的高度均匀。
接着，从支撑板171的下面侧照射紫外线，使粘接层172的粘接力降低，当剥离支撑板171和粘接层172时，变为图45所示。在该状态下，形成于硅基板132周侧面外侧上的绝缘层137的下面、形成于贯穿孔139内的贯穿电极142的下面和形成于贯穿孔174内的密封膜145的下面与硅基板132的下面呈齐平面。之后，在形成于贯穿孔139内的贯穿电极142的下面附着粘接剂的情况下，利用等离子体蚀刻等去除。
接着，如图46所示，在形成于贯穿孔139内的贯穿电极142的下面，形成焊锡孔143。之后，如图47所示，当沿切割线137切断相互邻接的硅基板132之间的密封膜145时，如图29所示，得到多个在硅基板132的周侧面外侧具有贯穿电极142的半导体构成体131。
之后，参照图29来说明，将半导体构成体131的焊锡孔143配置在电路基板201的连接衬垫203上，另外，将光传感器111的焊锡孔124配置在半导体构成体131的柱状电极144上，接着，通过回流，将半导体构成体131的焊锡孔143接合在电路基板201的连接衬垫203上，同时，将光传感器111的焊锡孔124接合在半导体构成体131的柱状电极144的上面上时，将由光传感器111与半导体构成体131构成的光传感器模块10安装在电路基板201上。
这样，由于经设置了在其下面设置有的贯穿电极123下的焊锡孔124，将上面具有光电变换器件区域113的光传感器11安装在具有作为该光传感器111的外围驱动电路功能的半导体构成体131上，所以即便在光传感器111的上面设置有光电变换器件区域113和连接于该光电变换器件区域113上的连接衬垫114，也可以不使用引线接合或柔性配线板来安装，因此，可以容易安装光传感器111。
另外，由于经设置了在其下面设置有的贯穿电极142下的焊锡孔143，将半导体构成体131安装在电路基板201上，所以可以不使用引线接合或柔性配线板来安装，因此可以容易安装半导体构成体131。
另外，也可以在电路基板201上安装半导体构成体131，之后，在半导体构成体131上安装光传感器111。另外，也可以在半导体构成体131上安装光传感器111，之后，将由光传感器111与半导体构成体131构成的光传感器110安装在电路基板201上。
另外，在上述实施方式中，如图47所示，沿切割线173切断密封膜145，分离成各个半导体构成体131，但不限于此。例如在图46所示工序之后，如图48所示，将单片化的光传感器111的焊锡孔124接合在对应的柱状电极44上，之后，如图49所示，沿切割线173切断密封膜145，分离成各个半导体构成体131。
另外，在上述实施方式中，例如图37所示，在光传感器111的下面形成有焊锡孔124，但也可以不在光传感器111的下面形成焊锡孔124，而在半导体构成体131的两面侧形成焊锡孔。即，在图45所示工序之后，在贯穿电极142上形成焊锡孔143，在柱状电极144上形成焊锡孔124。图50中示出该状态。另外，也可以不在半导体构成体131的下面形成焊锡孔143，而例如在电路基板201的连接衬垫203上形成焊锡层。另外，光传感器111与半导体构成体131的接合、和半导体构成体131与电路基板201的接合之一或双方也可以不是基于焊锡孔，而是利用在热固化性绝缘树脂中混入导电性粒子的各向异性导电粘接材料或导电粘接剂来进行的。
另外，说明了半导体构成体131在将形成集成电路133的主面朝向上侧的状态下装载光传感器11的情况，但也可以在将集成电路133的面朝向下侧的状态下装载光传感器111。即，可以将第5实施方式所示的光传感器111和半导体构成体131适用于图2所示的第2实施方式的构造中。
此时，也可以将图2所示的光传感器35配置在半导体构成体131上。另外，也可以在图2所示的半导体构成体5上配置第5实施方式中求出的光传感器111。
另外，在第5实施方式中，也可以如第1实施方式所示，不在半导体构成体131中设置有贯穿电极142，而在硅基板132的上面侧仅设置有柱状电极144。此时，作为一例，连接于柔性配线板29上的柱状电极144可以构成为在绝缘层37上设置延伸的配线，并连接于柔性配线板29的配线22上。
另外，在上述实施方式中，如图30和图38所示，使用在紫外线透过性玻璃板、透明金属板、透明树脂板等构成的支撑板161、171上面设置了粘接力由于照射紫外线而降低的粘接层162、172的器件，但不限于此。例如，也可以将铜箔用作支撑板161、171，将由模材料构成的层作为粘接层162、172，通过蚀刻或研磨等来去除板和层。
并且，在上述实施方式中，设半导体构成体131在上面侧具有柱状电极144，但不限于此，也可以不具有柱状电极144和密封膜145，而具有备有作为外部连接用电极的连接衬垫部的配线141，并且，具有覆盖去除配线141的连接衬垫部的部分的涂层膜。

Claims (26)

1、一种光传感器模块，其特征在于，具备：
光传感器(35、61、111)，其在上面设置有光电变换器件区域(38、113)和连接于该光电变换器件区域(38、113)的连接衬垫(39、114)；
具有多个外部连接用电极(9、16、134、144)的半导体构成体(5、131)；
设置在所述半导体构成体(5、131)周围的绝缘层(18、137)；和
配线(22、122)，其设置在至少所述半导体构成体(5、131)和所述光传感器(35、61、111)的任一方上，电连接所述光传感器(35、61、111)的连接衬垫(39、114)与所述半导体构成体(5、131)的外部连接用电极(9、16、134、144)。
2、根据权利要求1所述的光传感器模块，其特征在于：其中
将所述外部连接用电极(16、144)形成为柱状，所述半导体构成体(5、131)还具有半导体基板(7、132)、和形成于所述半导体基板(7、132)上的连接衬垫(9、134)，所述外部连接用电极(16、144)电连接于所述连接衬垫(9、134)上，并且，具有设置在所述半导体基板(7、132)上的所述外部连接用电极(16、144)之间的密封膜(17、145)。
3、根据权利要求1所述的光传感器模块，其特征在于：
所述半导体构成体(131)具有底面，所述绝缘层(137)具有底面，所述半导体构成体(131)的底面和所述绝缘层(137)的底面是齐平面。
4、根据权利要求1所述的光传感器模块，其特征在于：
所述半导体构成体(131)具有沿厚度方向贯穿绝缘层(137)的贯穿电极(142)。
5、根据权利要求4所述的光传感器模块，其特征在于：
所述半导体构成体(131)还具有设置在绝缘层(137)上的配线(141)。
6、根据权利要求5所述的光传感器模块，其特征在于：
所述外部连接用电极(144)是将所述贯穿电极(142)在所述配线(141)上沿所述绝缘层(137)的厚度方向的相反方向延伸的柱状电极。
7、根据权利要求1所述的光传感器模块，其特征在于：
所述半导体构成体(5)具有设置在所述半导体构成体(5)和所述绝缘层(18)上的绝缘膜(19)，所述配线(22)被设置在所述绝缘层(19)上。
8、根据权利要求1所述的光传感器模块，其特征在于，
所述光传感器(61、111)具有：具有所述光电变换器件区域(38、113)的半导体基板(62、112)；设置在所述半导体基板(62、112)上的保护膜(65、115)；和设置在所述半导体基板(62、112)周围的绝缘层(67、117)。
9、根据权利要求8所述的光传感器模块，其特征在于：
在所述光传感器(61)的绝缘层(67)上具有上面配线(69)。
10、根据权利要求8所述的光传感器模块，其特征在于：
所述配线(122)被设置在所述光传感器(111)的绝缘层(117)上。
11、根据权利要求8所述的光传感器模块，其特征在于：
所述光传感器(61、111)具有沿所述绝缘层(67、117)的厚度方向贯穿的贯穿电极(73、123)。
12、根据权利要求11所述的光传感器模块，其特征在于：
所述贯穿电极(73)是向所述绝缘层(67)的下面延伸的。
13、根据权利要求11所述的光传感器模块，其特征在于：
所述贯穿电极(123)是向所述绝缘层(117)的上面延伸的。
14、根据权利要求8所述的光传感器模块，其特征在于：
所述半导体基板(112)具有底面，所述绝缘层(117)具有底面，所述半导体基板(112)的所述底面和所述绝缘层(117)的所述底面是齐平面。
15、根据权利要求1所述的光传感器模块，其特征在于：
模块还具有支撑所述半导体构成体(5)和所述绝缘层(18)的底板(1)，所述配线(22)连接于所述半导体构成体(5)的外部连接用电极(16)而设置在所述半导体构成体(5)和所述绝缘层(18)上。
16、根据权利要求1所述的光传感器模块，其特征在于：
模块在所述半导体构成体(5)和所述绝缘层(18)上还具有覆盖所述配线(22)的去除连接衬垫部的部分的涂层膜(23)，将所述光传感器(35、61)设置在所述涂层膜(23)上。
17、根据权利要求1所述的光传感器模块，其特征在于：
模块还具有支撑所述半导体构成体(5)和所述绝缘层(18)的底板(1)，所述半导体构成体(5)在所述底板(1)下，朝向与所述底板(1)侧相反的面侧上配置有所述外部连接用电极(16)。
18、根据权利要求1所述的光传感器模块，其特征在于：
所述半导体构成体(5)还具有沿厚度方向贯穿所述绝缘层(18)的上下导通部(56)。
19、根据权利要求18所述的光传感器模块，其特征在于：
所述上下导通部(56)是所述配线(22)的一部分。
20、根据权利要求1所述的光传感器模块，其特征在于：
所述光传感器(35)的连接衬垫经接合线(42)连接于所述配线(22)上。
21、根据权利要求1所述的光传感器模块，其特征在于：
所述光传感器(61)在下面具有电连接于所述配线(22)的下面配线(74)，模块还具有连接所述配线(22)与所述下面配线(74)的焊锡层(77)。
22、根据权利要求1所述的光传感器模块，其特征在于：
模块还具有彼此离间支撑所述半导体构成体(5)和所述光传感器(35)的底板(1)，所述绝缘层(18)被设置在所述半导体构成体(5)和所述光传感器(35)周围的所述底板(1)上。
23、根据权利要求1所述的光传感器模块，其特征在于：
在所述绝缘层(18)内埋入有电子零件(27)。
24、根据权利要求1所述的光传感器模块，其特征在于：
模块还具有设置在所述光传感器(35、61、111)上面的紫外线截断用的玻璃板(45、71、154)。
25、根据权利要求1所述的光传感器模块，其特征在于：
所述光传感器(35、61、111)被装载于所述半导体构成体(5、131)上，其整体厚度为1mm以下。
26、根据权利要求1所述的光传感器模块，其特征在于：
在所述光传感器(35、61、111)的上方配置有透镜(47、152)。
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