CN1204623C - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN1204623C
CN1204623C CNB011223839A CN01122383A CN1204623C CN 1204623 C CN1204623 C CN 1204623C CN B011223839 A CNB011223839 A CN B011223839A CN 01122383 A CN01122383 A CN 01122383A CN 1204623 C CN1204623 C CN 1204623C
Authority
CN
China
Prior art keywords
power terminal
power terminals
semiconductor device
power
terminals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB011223839A
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English (en)
Chinese (zh)
Other versions
CN1333566A (zh
Inventor
平原文雄
绪方健一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1333566A publication Critical patent/CN1333566A/zh
Application granted granted Critical
Publication of CN1204623C publication Critical patent/CN1204623C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Lead Frames For Integrated Circuits (AREA)
CNB011223839A 2000-07-11 2001-07-11 半导体装置 Expired - Fee Related CN1204623C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP210475/2000 2000-07-11
JP2000210475A JP2002026251A (ja) 2000-07-11 2000-07-11 半導体装置

Publications (2)

Publication Number Publication Date
CN1333566A CN1333566A (zh) 2002-01-30
CN1204623C true CN1204623C (zh) 2005-06-01

Family

ID=18706739

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB011223839A Expired - Fee Related CN1204623C (zh) 2000-07-11 2001-07-11 半导体装置

Country Status (6)

Country Link
US (1) US6885096B2 (https=)
EP (1) EP1172850A3 (https=)
JP (1) JP2002026251A (https=)
KR (1) KR100430772B1 (https=)
CN (1) CN1204623C (https=)
TW (1) TW498550B (https=)

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JP2006229180A (ja) 2005-01-24 2006-08-31 Toyota Motor Corp 半導体モジュールおよび半導体装置
JP4478049B2 (ja) * 2005-03-15 2010-06-09 三菱電機株式会社 半導体装置
JP4552810B2 (ja) * 2005-09-06 2010-09-29 株式会社デンソー 半導体装置
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JP4564937B2 (ja) 2006-04-27 2010-10-20 日立オートモティブシステムズ株式会社 電気回路装置及び電気回路モジュール並びに電力変換装置
CN101819965B (zh) 2006-06-09 2013-01-16 本田技研工业株式会社 半导体装置
JP4829690B2 (ja) * 2006-06-09 2011-12-07 本田技研工業株式会社 半導体装置
JP5232367B2 (ja) * 2006-07-12 2013-07-10 ルネサスエレクトロニクス株式会社 半導体装置
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JP4820233B2 (ja) * 2006-08-09 2011-11-24 本田技研工業株式会社 半導体装置
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JP5227532B2 (ja) * 2007-04-02 2013-07-03 日立オートモティブシステムズ株式会社 インバータ回路用の半導体モジュール
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US7773381B2 (en) * 2007-09-26 2010-08-10 Rohm Co., Ltd. Semiconductor device
JP5092654B2 (ja) * 2007-09-28 2012-12-05 株式会社デンソー 電力変換装置
WO2009062534A1 (de) * 2007-11-13 2009-05-22 Siemens Aktiengesellschaft Leistungshalbleitermodul
JP4580997B2 (ja) 2008-03-11 2010-11-17 日立オートモティブシステムズ株式会社 電力変換装置
JP5067267B2 (ja) 2008-06-05 2012-11-07 三菱電機株式会社 樹脂封止型半導体装置とその製造方法
JP5253430B2 (ja) * 2009-03-23 2013-07-31 株式会社豊田中央研究所 パワーモジュール
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JP5481148B2 (ja) * 2009-10-02 2014-04-23 日立オートモティブシステムズ株式会社 半導体装置、およびパワー半導体モジュール、およびパワー半導体モジュールを備えた電力変換装置
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JP5440335B2 (ja) 2010-04-06 2014-03-12 富士電機株式会社 パワー半導体モジュール及びそれを用いた電力変換装置
JP5242629B2 (ja) * 2010-05-10 2013-07-24 株式会社東芝 電力用半導体素子
WO2011145219A1 (ja) 2010-05-21 2011-11-24 三菱電機株式会社 パワー半導体モジュール
JP2010258485A (ja) * 2010-08-24 2010-11-11 Renesas Electronics Corp 半導体装置
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JP5387620B2 (ja) * 2011-05-31 2014-01-15 株式会社安川電機 電力変換装置、半導体装置および電力変換装置の製造方法
US8987777B2 (en) 2011-07-11 2015-03-24 International Rectifier Corporation Stacked half-bridge power module
JP2012074730A (ja) * 2011-12-07 2012-04-12 Mitsubishi Electric Corp 電力用半導体モジュール
CN102857078A (zh) * 2012-01-05 2013-01-02 中国电力科学研究院 一种基于焊接型igbt与压接型二极管反并联结构的换流单元
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ITMI20120713A1 (it) 2012-04-27 2013-10-28 St Microelectronics Srl Sistema elettronico a montaggio attraverso fori passanti con elementi di dissipazione serrati tra loro contro corpo isolante
ITMI20120711A1 (it) * 2012-04-27 2013-10-28 St Microelectronics Srl Dispositivo di potenza
JP5444486B2 (ja) * 2013-02-15 2014-03-19 株式会社東芝 インバータ装置
JPWO2015005181A1 (ja) * 2013-07-08 2017-03-02 株式会社村田製作所 電力変換部品
CN103367305A (zh) * 2013-07-31 2013-10-23 西安永电电气有限责任公司 一种用于igbt器件的电连接结构
DE102013219192A1 (de) * 2013-09-24 2015-03-26 Conti Temic Microelectronic Gmbh Leistungsmodul, Stromrichter und Antriebsanordnung mit einem Leistungsmodul
CN106663676B (zh) * 2014-08-29 2019-05-28 三菱电机株式会社 半导体装置以及多相用半导体装置
JP6417947B2 (ja) * 2015-01-09 2018-11-07 株式会社デンソー 三相インバータ回路の実装構造
US9892993B2 (en) * 2015-04-28 2018-02-13 Shindengen Electric Manufacturing Co., Ltd. Semiconductor module having stacked insulated substrate structures
CN107851634B (zh) * 2015-05-22 2020-06-30 Abb电网瑞士股份公司 功率半导体模块
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JP6497286B2 (ja) * 2015-09-18 2019-04-10 株式会社デンソー 半導体モジュール
JP6690280B2 (ja) * 2016-02-12 2020-04-28 株式会社豊田自動織機 半導体モジュール
CN105789292A (zh) * 2016-05-05 2016-07-20 湖南大学 一种单芯片双向igbt单管的封装结构
CN105914196A (zh) * 2016-05-05 2016-08-31 江西中能电气科技股份有限公司 一种单芯片双向igbt单管的封装结构
CN105789293A (zh) * 2016-05-05 2016-07-20 湖南大学 一种单芯片双向igbt模块的封装结构
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WO2018150449A1 (ja) * 2017-02-14 2018-08-23 日本精工株式会社 半導体モジュールおよびその製造方法と、これを備えた駆動装置、電動パワーステアリング装置
JP6786416B2 (ja) * 2017-02-20 2020-11-18 株式会社東芝 半導体装置
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JP7438071B2 (ja) * 2020-09-15 2024-02-26 株式会社東芝 半導体装置
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JP7823307B2 (ja) * 2021-11-11 2026-03-04 新光電気工業株式会社 半導体装置
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Also Published As

Publication number Publication date
EP1172850A3 (en) 2006-04-26
CN1333566A (zh) 2002-01-30
TW498550B (en) 2002-08-11
US20020024129A1 (en) 2002-02-28
EP1172850A2 (en) 2002-01-16
US6885096B2 (en) 2005-04-26
JP2002026251A (ja) 2002-01-25
KR20020006453A (ko) 2002-01-19
KR100430772B1 (ko) 2004-05-10

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Granted publication date: 20050601