KR100430772B1 - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR100430772B1
KR100430772B1 KR10-2001-0041156A KR20010041156A KR100430772B1 KR 100430772 B1 KR100430772 B1 KR 100430772B1 KR 20010041156 A KR20010041156 A KR 20010041156A KR 100430772 B1 KR100430772 B1 KR 100430772B1
Authority
KR
South Korea
Prior art keywords
power terminal
power terminals
power
semiconductor device
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2001-0041156A
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English (en)
Korean (ko)
Other versions
KR20020006453A (ko
Inventor
히라하라후미오
오가타겐이치
Original Assignee
가부시끼가이샤 도시바
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Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20020006453A publication Critical patent/KR20020006453A/ko
Application granted granted Critical
Publication of KR100430772B1 publication Critical patent/KR100430772B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Lead Frames For Integrated Circuits (AREA)
KR10-2001-0041156A 2000-07-11 2001-07-10 반도체장치 Expired - Fee Related KR100430772B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000210475A JP2002026251A (ja) 2000-07-11 2000-07-11 半導体装置
JPJP-P-2000-00210475 2000-07-11

Publications (2)

Publication Number Publication Date
KR20020006453A KR20020006453A (ko) 2002-01-19
KR100430772B1 true KR100430772B1 (ko) 2004-05-10

Family

ID=18706739

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0041156A Expired - Fee Related KR100430772B1 (ko) 2000-07-11 2001-07-10 반도체장치

Country Status (6)

Country Link
US (1) US6885096B2 (https=)
EP (1) EP1172850A3 (https=)
JP (1) JP2002026251A (https=)
KR (1) KR100430772B1 (https=)
CN (1) CN1204623C (https=)
TW (1) TW498550B (https=)

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JP4323299B2 (ja) * 2003-12-03 2009-09-02 三菱電機株式会社 半導体装置
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JP4743396B2 (ja) * 2004-07-29 2011-08-10 ヤマハ発動機株式会社 パワーモジュール、モータコントロールユニット、電動輸送機器およびパワーモジュールの製造方法
JP2006229180A (ja) 2005-01-24 2006-08-31 Toyota Motor Corp 半導体モジュールおよび半導体装置
JP4478049B2 (ja) * 2005-03-15 2010-06-09 三菱電機株式会社 半導体装置
JP4552810B2 (ja) * 2005-09-06 2010-09-29 株式会社デンソー 半導体装置
TWI302813B (en) * 2006-01-11 2008-11-01 Via Tech Inc Circuit board and electronic assembly
JP4564937B2 (ja) 2006-04-27 2010-10-20 日立オートモティブシステムズ株式会社 電気回路装置及び電気回路モジュール並びに電力変換装置
CN101819965B (zh) 2006-06-09 2013-01-16 本田技研工业株式会社 半导体装置
JP4829690B2 (ja) * 2006-06-09 2011-12-07 本田技研工業株式会社 半導体装置
JP5232367B2 (ja) * 2006-07-12 2013-07-10 ルネサスエレクトロニクス株式会社 半導体装置
US8045335B2 (en) 2006-08-09 2011-10-25 Honda Motor Co., Ltd. Semiconductor device
JP4820233B2 (ja) * 2006-08-09 2011-11-24 本田技研工業株式会社 半導体装置
TWI315567B (en) * 2006-11-10 2009-10-01 Via Tech Inc Electronic assembly and circuit board
JP5227532B2 (ja) * 2007-04-02 2013-07-03 日立オートモティブシステムズ株式会社 インバータ回路用の半導体モジュール
JP2009043820A (ja) 2007-08-07 2009-02-26 Rohm Co Ltd 高効率モジュール
US7773381B2 (en) * 2007-09-26 2010-08-10 Rohm Co., Ltd. Semiconductor device
JP5092654B2 (ja) * 2007-09-28 2012-12-05 株式会社デンソー 電力変換装置
WO2009062534A1 (de) * 2007-11-13 2009-05-22 Siemens Aktiengesellschaft Leistungshalbleitermodul
JP4580997B2 (ja) 2008-03-11 2010-11-17 日立オートモティブシステムズ株式会社 電力変換装置
JP5067267B2 (ja) 2008-06-05 2012-11-07 三菱電機株式会社 樹脂封止型半導体装置とその製造方法
JP5253430B2 (ja) * 2009-03-23 2013-07-31 株式会社豊田中央研究所 パワーモジュール
EP2413680A4 (en) * 2009-03-26 2013-05-29 Panasonic Corp VEHICLE INTERNAL ELECTRONIC DEVICE
US9147666B2 (en) 2009-05-14 2015-09-29 Rohm Co., Ltd. Semiconductor device
JP5481148B2 (ja) * 2009-10-02 2014-04-23 日立オートモティブシステムズ株式会社 半導体装置、およびパワー半導体モジュール、およびパワー半導体モジュールを備えた電力変換装置
FR2951019B1 (fr) * 2009-10-07 2012-06-08 Valeo Etudes Electroniques Module de puissance pour vehicule automobile
JP5581724B2 (ja) * 2010-02-22 2014-09-03 ダイキン工業株式会社 電力変換装置
US8513784B2 (en) * 2010-03-18 2013-08-20 Alpha & Omega Semiconductor Incorporated Multi-layer lead frame package and method of fabrication
JP5494147B2 (ja) * 2010-04-06 2014-05-14 富士電機株式会社 パワー半導体モジュール及びそれを用いた電力変換装置
JP5440335B2 (ja) 2010-04-06 2014-03-12 富士電機株式会社 パワー半導体モジュール及びそれを用いた電力変換装置
JP5242629B2 (ja) * 2010-05-10 2013-07-24 株式会社東芝 電力用半導体素子
WO2011145219A1 (ja) 2010-05-21 2011-11-24 三菱電機株式会社 パワー半導体モジュール
JP2010258485A (ja) * 2010-08-24 2010-11-11 Renesas Electronics Corp 半導体装置
CN103229295B (zh) 2010-11-29 2016-01-06 丰田自动车株式会社 动力模块
US8963338B2 (en) * 2011-03-02 2015-02-24 International Rectifier Corporation III-nitride transistor stacked with diode in a package
JP5387620B2 (ja) * 2011-05-31 2014-01-15 株式会社安川電機 電力変換装置、半導体装置および電力変換装置の製造方法
US8987777B2 (en) 2011-07-11 2015-03-24 International Rectifier Corporation Stacked half-bridge power module
JP2012074730A (ja) * 2011-12-07 2012-04-12 Mitsubishi Electric Corp 電力用半導体モジュール
CN102857078A (zh) * 2012-01-05 2013-01-02 中国电力科学研究院 一种基于焊接型igbt与压接型二极管反并联结构的换流单元
EP2816594A4 (en) * 2012-02-14 2015-08-12 Panasonic Ip Man Co Ltd SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
ITMI20120713A1 (it) 2012-04-27 2013-10-28 St Microelectronics Srl Sistema elettronico a montaggio attraverso fori passanti con elementi di dissipazione serrati tra loro contro corpo isolante
ITMI20120711A1 (it) * 2012-04-27 2013-10-28 St Microelectronics Srl Dispositivo di potenza
JP5444486B2 (ja) * 2013-02-15 2014-03-19 株式会社東芝 インバータ装置
JPWO2015005181A1 (ja) * 2013-07-08 2017-03-02 株式会社村田製作所 電力変換部品
CN103367305A (zh) * 2013-07-31 2013-10-23 西安永电电气有限责任公司 一种用于igbt器件的电连接结构
DE102013219192A1 (de) * 2013-09-24 2015-03-26 Conti Temic Microelectronic Gmbh Leistungsmodul, Stromrichter und Antriebsanordnung mit einem Leistungsmodul
CN106663676B (zh) * 2014-08-29 2019-05-28 三菱电机株式会社 半导体装置以及多相用半导体装置
JP6417947B2 (ja) * 2015-01-09 2018-11-07 株式会社デンソー 三相インバータ回路の実装構造
US9892993B2 (en) * 2015-04-28 2018-02-13 Shindengen Electric Manufacturing Co., Ltd. Semiconductor module having stacked insulated substrate structures
CN107851634B (zh) * 2015-05-22 2020-06-30 Abb电网瑞士股份公司 功率半导体模块
KR101629470B1 (ko) * 2015-06-29 2016-06-14 주식회사 에코세미텍 전력용 반도체 모듈의 조립방법 및 이를 이용하여 제조된 전력용 반도체 모듈
JP6497286B2 (ja) * 2015-09-18 2019-04-10 株式会社デンソー 半導体モジュール
JP6690280B2 (ja) * 2016-02-12 2020-04-28 株式会社豊田自動織機 半導体モジュール
CN105789292A (zh) * 2016-05-05 2016-07-20 湖南大学 一种单芯片双向igbt单管的封装结构
CN105914196A (zh) * 2016-05-05 2016-08-31 江西中能电气科技股份有限公司 一种单芯片双向igbt单管的封装结构
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JP6786416B2 (ja) * 2017-02-20 2020-11-18 株式会社東芝 半導体装置
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JP2019046899A (ja) * 2017-08-31 2019-03-22 ルネサスエレクトロニクス株式会社 電子装置
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JP7438071B2 (ja) * 2020-09-15 2024-02-26 株式会社東芝 半導体装置
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JP7823307B2 (ja) * 2021-11-11 2026-03-04 新光電気工業株式会社 半導体装置
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Also Published As

Publication number Publication date
EP1172850A3 (en) 2006-04-26
CN1333566A (zh) 2002-01-30
TW498550B (en) 2002-08-11
US20020024129A1 (en) 2002-02-28
EP1172850A2 (en) 2002-01-16
US6885096B2 (en) 2005-04-26
JP2002026251A (ja) 2002-01-25
KR20020006453A (ko) 2002-01-19
CN1204623C (zh) 2005-06-01

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