JP2002026251A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2002026251A
JP2002026251A JP2000210475A JP2000210475A JP2002026251A JP 2002026251 A JP2002026251 A JP 2002026251A JP 2000210475 A JP2000210475 A JP 2000210475A JP 2000210475 A JP2000210475 A JP 2000210475A JP 2002026251 A JP2002026251 A JP 2002026251A
Authority
JP
Japan
Prior art keywords
power terminal
semiconductor device
power
terminals
power terminals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2000210475A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002026251A5 (https=
Inventor
Fumio Hirahara
文雄 平原
Kenichi Ogata
健一 緒方
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000210475A priority Critical patent/JP2002026251A/ja
Priority to TW90115789A priority patent/TW498550B/zh
Priority to KR10-2001-0041156A priority patent/KR100430772B1/ko
Priority to US09/900,946 priority patent/US6885096B2/en
Priority to CNB011223839A priority patent/CN1204623C/zh
Priority to EP20010115799 priority patent/EP1172850A3/en
Publication of JP2002026251A publication Critical patent/JP2002026251A/ja
Publication of JP2002026251A5 publication Critical patent/JP2002026251A5/ja
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP2000210475A 2000-07-11 2000-07-11 半導体装置 Abandoned JP2002026251A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000210475A JP2002026251A (ja) 2000-07-11 2000-07-11 半導体装置
TW90115789A TW498550B (en) 2000-07-11 2001-06-28 Semiconductor device
KR10-2001-0041156A KR100430772B1 (ko) 2000-07-11 2001-07-10 반도체장치
US09/900,946 US6885096B2 (en) 2000-07-11 2001-07-10 Semiconductor device having at least three power terminals superposed on each other
CNB011223839A CN1204623C (zh) 2000-07-11 2001-07-11 半导体装置
EP20010115799 EP1172850A3 (en) 2000-07-11 2001-07-11 Semiconductor device having at least three power terminals superposed on each other

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000210475A JP2002026251A (ja) 2000-07-11 2000-07-11 半導体装置

Publications (2)

Publication Number Publication Date
JP2002026251A true JP2002026251A (ja) 2002-01-25
JP2002026251A5 JP2002026251A5 (https=) 2005-06-23

Family

ID=18706739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000210475A Abandoned JP2002026251A (ja) 2000-07-11 2000-07-11 半導体装置

Country Status (6)

Country Link
US (1) US6885096B2 (https=)
EP (1) EP1172850A3 (https=)
JP (1) JP2002026251A (https=)
KR (1) KR100430772B1 (https=)
CN (1) CN1204623C (https=)
TW (1) TW498550B (https=)

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004047850A (ja) * 2002-07-15 2004-02-12 Mitsubishi Electric Corp パワー半導体装置
US6845012B2 (en) 2000-04-19 2005-01-18 Denso Corporation Coolant cooled type semiconductor device
JP2005166987A (ja) * 2003-12-03 2005-06-23 Mitsubishi Electric Corp 半導体装置
JP2006066895A (ja) * 2004-07-29 2006-03-09 Yamaha Motor Co Ltd パワーモジュールおよびこれを用いた電動輸送機器
JP2007073674A (ja) * 2005-09-06 2007-03-22 Denso Corp 半導体装置
WO2007142038A1 (ja) 2006-06-09 2007-12-13 Honda Motor Co., Ltd. 半導体装置
JP2007329427A (ja) * 2006-06-09 2007-12-20 Honda Motor Co Ltd 半導体装置
WO2008018332A1 (fr) 2006-08-09 2008-02-14 Honda Motor Co., Ltd. Dispositif à semi-conducteurs
JP2009043820A (ja) * 2007-08-07 2009-02-26 Rohm Co Ltd 高効率モジュール
JP2009089491A (ja) * 2007-09-28 2009-04-23 Denso Corp 電力変換装置
DE102008054306A1 (de) 2008-06-05 2009-12-17 Mitsubishi Electric Corp. Harzabgedichtete Halbleitervorrichtung und Herstellungsverfahren dafür
JP2010171463A (ja) * 2010-05-10 2010-08-05 Toshiba Corp 電力用半導体素子及びそのインバータ装置
JP2010251711A (ja) * 2009-03-23 2010-11-04 Toyota Central R&D Labs Inc パワーモジュール
JP2010258485A (ja) * 2010-08-24 2010-11-11 Renesas Electronics Corp 半導体装置
WO2010131679A1 (ja) 2009-05-14 2010-11-18 ローム株式会社 半導体装置
JP2011503852A (ja) * 2007-11-13 2011-01-27 シーメンス アクチエンゲゼルシヤフト パワー半導体素子モジュール
JP2011172442A (ja) * 2010-02-22 2011-09-01 Daikin Industries Ltd 電力変換装置
JP2012074730A (ja) * 2011-12-07 2012-04-12 Mitsubishi Electric Corp 電力用半導体モジュール
JP2013021318A (ja) * 2011-07-11 2013-01-31 Internatl Rectifier Corp スタック型ハーフブリッジ電力モジュール
JP2013085477A (ja) * 2013-02-15 2013-05-09 Toshiba Corp インバータ装置
WO2015005181A1 (ja) * 2013-07-08 2015-01-15 株式会社 村田製作所 電力変換部品
JP2016129461A (ja) * 2015-01-09 2016-07-14 株式会社デンソー 三相インバータ回路の実装構造
US9704831B2 (en) 2010-05-21 2017-07-11 Mitsubishi Electric Corporation Power semiconductor module
WO2017138414A1 (ja) * 2016-02-12 2017-08-17 株式会社 豊田自動織機 半導体モジュール及びインバータ装置
WO2018150449A1 (ja) * 2017-02-14 2018-08-23 日本精工株式会社 半導体モジュールおよびその製造方法と、これを備えた駆動装置、電動パワーステアリング装置
US10340816B2 (en) 2014-08-29 2019-07-02 Mitsubishi Electric Corporation Semiconductor device and multiphase semiconductor device
JP2022048877A (ja) * 2020-09-15 2022-03-28 株式会社東芝 半導体装置
JP2023071585A (ja) * 2021-11-11 2023-05-23 新光電気工業株式会社 半導体装置
JP2023071301A (ja) * 2021-11-11 2023-05-23 新光電気工業株式会社 半導体装置

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7042086B2 (en) * 2002-10-16 2006-05-09 Nissan Motor Co., Ltd. Stacked semiconductor module and assembling method of the same
DE102004015654A1 (de) * 2003-04-02 2004-10-21 Luk Lamellen Und Kupplungsbau Beteiligungs Kg Endstufe zum Ansteuern einer elektrischen Maschine
FR2855912B1 (fr) * 2003-06-04 2006-04-14 Alstom Cellule de commutation de puissance, et procede de fabrication de la cellule
WO2005018001A1 (ja) * 2003-08-18 2005-02-24 Sanken Electric Co., Ltd. 半導体装置
DE102004027185B4 (de) * 2004-06-03 2008-08-28 Infineon Technologies Ag Niederinduktives Halbleiterbauelement mit Halbbrückenkonfiguration
JP2006229180A (ja) 2005-01-24 2006-08-31 Toyota Motor Corp 半導体モジュールおよび半導体装置
JP4478049B2 (ja) * 2005-03-15 2010-06-09 三菱電機株式会社 半導体装置
TWI302813B (en) * 2006-01-11 2008-11-01 Via Tech Inc Circuit board and electronic assembly
JP4564937B2 (ja) 2006-04-27 2010-10-20 日立オートモティブシステムズ株式会社 電気回路装置及び電気回路モジュール並びに電力変換装置
JP5232367B2 (ja) * 2006-07-12 2013-07-10 ルネサスエレクトロニクス株式会社 半導体装置
JP4820233B2 (ja) * 2006-08-09 2011-11-24 本田技研工業株式会社 半導体装置
TWI315567B (en) * 2006-11-10 2009-10-01 Via Tech Inc Electronic assembly and circuit board
JP5227532B2 (ja) * 2007-04-02 2013-07-03 日立オートモティブシステムズ株式会社 インバータ回路用の半導体モジュール
US7773381B2 (en) * 2007-09-26 2010-08-10 Rohm Co., Ltd. Semiconductor device
JP4580997B2 (ja) 2008-03-11 2010-11-17 日立オートモティブシステムズ株式会社 電力変換装置
EP2413680A4 (en) * 2009-03-26 2013-05-29 Panasonic Corp VEHICLE INTERNAL ELECTRONIC DEVICE
JP5481148B2 (ja) * 2009-10-02 2014-04-23 日立オートモティブシステムズ株式会社 半導体装置、およびパワー半導体モジュール、およびパワー半導体モジュールを備えた電力変換装置
FR2951019B1 (fr) * 2009-10-07 2012-06-08 Valeo Etudes Electroniques Module de puissance pour vehicule automobile
US8513784B2 (en) * 2010-03-18 2013-08-20 Alpha & Omega Semiconductor Incorporated Multi-layer lead frame package and method of fabrication
JP5494147B2 (ja) * 2010-04-06 2014-05-14 富士電機株式会社 パワー半導体モジュール及びそれを用いた電力変換装置
JP5440335B2 (ja) 2010-04-06 2014-03-12 富士電機株式会社 パワー半導体モジュール及びそれを用いた電力変換装置
CN103229295B (zh) 2010-11-29 2016-01-06 丰田自动车株式会社 动力模块
US8963338B2 (en) * 2011-03-02 2015-02-24 International Rectifier Corporation III-nitride transistor stacked with diode in a package
JP5387620B2 (ja) * 2011-05-31 2014-01-15 株式会社安川電機 電力変換装置、半導体装置および電力変換装置の製造方法
CN102857078A (zh) * 2012-01-05 2013-01-02 中国电力科学研究院 一种基于焊接型igbt与压接型二极管反并联结构的换流单元
EP2816594A4 (en) * 2012-02-14 2015-08-12 Panasonic Ip Man Co Ltd SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
ITMI20120713A1 (it) 2012-04-27 2013-10-28 St Microelectronics Srl Sistema elettronico a montaggio attraverso fori passanti con elementi di dissipazione serrati tra loro contro corpo isolante
ITMI20120711A1 (it) * 2012-04-27 2013-10-28 St Microelectronics Srl Dispositivo di potenza
CN103367305A (zh) * 2013-07-31 2013-10-23 西安永电电气有限责任公司 一种用于igbt器件的电连接结构
DE102013219192A1 (de) * 2013-09-24 2015-03-26 Conti Temic Microelectronic Gmbh Leistungsmodul, Stromrichter und Antriebsanordnung mit einem Leistungsmodul
US9892993B2 (en) * 2015-04-28 2018-02-13 Shindengen Electric Manufacturing Co., Ltd. Semiconductor module having stacked insulated substrate structures
CN107851634B (zh) * 2015-05-22 2020-06-30 Abb电网瑞士股份公司 功率半导体模块
KR101629470B1 (ko) * 2015-06-29 2016-06-14 주식회사 에코세미텍 전력용 반도체 모듈의 조립방법 및 이를 이용하여 제조된 전력용 반도체 모듈
JP6497286B2 (ja) * 2015-09-18 2019-04-10 株式会社デンソー 半導体モジュール
CN105789292A (zh) * 2016-05-05 2016-07-20 湖南大学 一种单芯片双向igbt单管的封装结构
CN105914196A (zh) * 2016-05-05 2016-08-31 江西中能电气科技股份有限公司 一种单芯片双向igbt单管的封装结构
CN105789293A (zh) * 2016-05-05 2016-07-20 湖南大学 一种单芯片双向igbt模块的封装结构
DE102016120778B4 (de) * 2016-10-31 2024-01-25 Infineon Technologies Ag Baugruppe mit vertikal beabstandeten, teilweise verkapselten Kontaktstrukturen
FR3060243B1 (fr) * 2016-12-12 2019-08-23 Institut Vedecom Module de commutation de puissance, convertisseur integrant celui-ci et procede de fabrication
JP6786416B2 (ja) * 2017-02-20 2020-11-18 株式会社東芝 半導体装置
DE102017109515B4 (de) 2017-05-04 2024-10-02 Schaeffler Technologies AG & Co. KG Halbleiteranordnung und Verfahren zu deren Herstellung
DE102017213759A1 (de) * 2017-08-08 2019-02-14 Schweizer Electronic Ag Leiterplattenelement und Verfahren zum Herstellen eines Leiterplattenelements
JP2019046899A (ja) * 2017-08-31 2019-03-22 ルネサスエレクトロニクス株式会社 電子装置
DE102017217352A1 (de) * 2017-09-28 2019-03-28 Danfoss Silicon Power Gmbh Stromschiene und leistungsmodul
WO2022088179A1 (en) * 2020-11-02 2022-05-05 Dynex Semiconductor Limited High power density 3d semiconductor module packaging
US20230352368A1 (en) * 2022-04-27 2023-11-02 Advanced Semiconductor Engineering, Inc. Power module packaging structure

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4426689A (en) * 1979-03-12 1984-01-17 International Business Machines Corporation Vertical semiconductor integrated circuit chip packaging
US4454529A (en) * 1981-01-12 1984-06-12 Avx Corporation Integrated circuit device having internal dampening for a plurality of power supplies
JP3053298B2 (ja) * 1992-08-19 2000-06-19 株式会社東芝 半導体装置
JPH06151685A (ja) 1992-11-04 1994-05-31 Mitsubishi Electric Corp Ｍｃｐ半導体装置
JPH06188335A (ja) * 1992-12-22 1994-07-08 Fuji Electric Co Ltd 樹脂封止形半導体装置
US5644161A (en) * 1993-03-29 1997-07-01 Staktek Corporation Ultra-high density warp-resistant memory module
US5408128A (en) * 1993-09-15 1995-04-18 International Rectifier Corporation High power semiconductor device module with low thermal resistance and simplified manufacturing
JP2606116B2 (ja) * 1993-12-28 1997-04-30 日本電気株式会社 半導体装置
US5532512A (en) * 1994-10-03 1996-07-02 General Electric Company Direct stacked and flip chip power semiconductor device structures
US5872403A (en) * 1997-01-02 1999-02-16 Lucent Technologies, Inc. Package for a power semiconductor die and power supply employing the same
US6208521B1 (en) * 1997-05-19 2001-03-27 Nitto Denko Corporation Film carrier and laminate type mounting structure using same
JP3220900B2 (ja) * 1997-06-24 2001-10-22 三菱電機株式会社 パワー半導体モジュール
JP3533317B2 (ja) * 1997-08-28 2004-05-31 株式会社東芝 圧接型半導体装置
JPH11163045A (ja) 1997-11-26 1999-06-18 Toshiba Corp 半導体装置及びその製造方法
US6060795A (en) * 1998-03-18 2000-05-09 Intersil Corporation Semiconductor power pack
FR2786655B1 (fr) * 1998-11-27 2001-11-23 Alstom Technology Dispositif electronique de puissance

Cited By (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7250674B2 (en) 2000-04-19 2007-07-31 Denso Corporation Coolant cooled type semiconductor device
US6845012B2 (en) 2000-04-19 2005-01-18 Denso Corporation Coolant cooled type semiconductor device
US7027302B2 (en) 2000-04-19 2006-04-11 Denso Corporation Coolant cooled type semiconductor device
US7106592B2 (en) 2000-04-19 2006-09-12 Denso Corporation Coolant cooled type semiconductor device
US7248478B2 (en) 2000-04-19 2007-07-24 Denso Corporation Coolant cooled type semiconductor device
JP2004047850A (ja) * 2002-07-15 2004-02-12 Mitsubishi Electric Corp パワー半導体装置
JP2005166987A (ja) * 2003-12-03 2005-06-23 Mitsubishi Electric Corp 半導体装置
JP2006066895A (ja) * 2004-07-29 2006-03-09 Yamaha Motor Co Ltd パワーモジュールおよびこれを用いた電動輸送機器
JP2007073674A (ja) * 2005-09-06 2007-03-22 Denso Corp 半導体装置
WO2007142038A1 (ja) 2006-06-09 2007-12-13 Honda Motor Co., Ltd. 半導体装置
JP2007329427A (ja) * 2006-06-09 2007-12-20 Honda Motor Co Ltd 半導体装置
WO2008018332A1 (fr) 2006-08-09 2008-02-14 Honda Motor Co., Ltd. Dispositif à semi-conducteurs
US8045335B2 (en) 2006-08-09 2011-10-25 Honda Motor Co., Ltd. Semiconductor device
JP2009043820A (ja) * 2007-08-07 2009-02-26 Rohm Co Ltd 高効率モジュール
US9653389B2 (en) 2007-08-07 2017-05-16 Rohm Co., Ltd. High efficiency module
US9431329B2 (en) 2007-08-07 2016-08-30 Rohm Co., Ltd. High efficiency module
US9269656B2 (en) 2007-08-07 2016-02-23 Rohm Co., Ltd. High efficiency module
US9230893B2 (en) 2007-08-07 2016-01-05 Rohm Co., Ltd. High efficiency module including a plurality of MOSFETS
US8928049B2 (en) 2007-08-07 2015-01-06 Rohm Co., Ltd. High efficiency module
JP2009089491A (ja) * 2007-09-28 2009-04-23 Denso Corp 電力変換装置
JP2011503852A (ja) * 2007-11-13 2011-01-27 シーメンス アクチエンゲゼルシヤフト パワー半導体素子モジュール
US9064737B2 (en) 2007-11-13 2015-06-23 Siemens Aktiengesellschaft Power semiconductor module
DE102008054306A1 (de) 2008-06-05 2009-12-17 Mitsubishi Electric Corp. Harzabgedichtete Halbleitervorrichtung und Herstellungsverfahren dafür
US7772709B2 (en) 2008-06-05 2010-08-10 Mitsubishi Electric Corporation Resin sealed semiconductor device and manufacturing method therefor
US8294272B2 (en) 2009-03-23 2012-10-23 Toyota Jidosha Kabushiki Kaisha Power module
JP2010251711A (ja) * 2009-03-23 2010-11-04 Toyota Central R&D Labs Inc パワーモジュール
EP3633723A2 (en) 2009-05-14 2020-04-08 Rohm Co., Ltd. Semiconductor device
US9147666B2 (en) 2009-05-14 2015-09-29 Rohm Co., Ltd. Semiconductor device
WO2010131679A1 (ja) 2009-05-14 2010-11-18 ローム株式会社 半導体装置
US9490200B2 (en) 2009-05-14 2016-11-08 Rohm Co., Ltd. Semiconductor device
JP2011172442A (ja) * 2010-02-22 2011-09-01 Daikin Industries Ltd 電力変換装置
JP2010171463A (ja) * 2010-05-10 2010-08-05 Toshiba Corp 電力用半導体素子及びそのインバータ装置
US9704831B2 (en) 2010-05-21 2017-07-11 Mitsubishi Electric Corporation Power semiconductor module
JP2010258485A (ja) * 2010-08-24 2010-11-11 Renesas Electronics Corp 半導体装置
JP2013021318A (ja) * 2011-07-11 2013-01-31 Internatl Rectifier Corp スタック型ハーフブリッジ電力モジュール
JP2012074730A (ja) * 2011-12-07 2012-04-12 Mitsubishi Electric Corp 電力用半導体モジュール
JP2013085477A (ja) * 2013-02-15 2013-05-09 Toshiba Corp インバータ装置
JPWO2015005181A1 (ja) * 2013-07-08 2017-03-02 株式会社村田製作所 電力変換部品
WO2015005181A1 (ja) * 2013-07-08 2015-01-15 株式会社 村田製作所 電力変換部品
US10340816B2 (en) 2014-08-29 2019-07-02 Mitsubishi Electric Corporation Semiconductor device and multiphase semiconductor device
JP2016129461A (ja) * 2015-01-09 2016-07-14 株式会社デンソー 三相インバータ回路の実装構造
WO2017138414A1 (ja) * 2016-02-12 2017-08-17 株式会社 豊田自動織機 半導体モジュール及びインバータ装置
JP2017143207A (ja) * 2016-02-12 2017-08-17 株式会社豊田自動織機 半導体モジュール
WO2018150449A1 (ja) * 2017-02-14 2018-08-23 日本精工株式会社 半導体モジュールおよびその製造方法と、これを備えた駆動装置、電動パワーステアリング装置
JP2022048877A (ja) * 2020-09-15 2022-03-28 株式会社東芝 半導体装置
JP7438071B2 (ja) 2020-09-15 2024-02-26 株式会社東芝 半導体装置
JP2023071585A (ja) * 2021-11-11 2023-05-23 新光電気工業株式会社 半導体装置
JP2023071301A (ja) * 2021-11-11 2023-05-23 新光電気工業株式会社 半導体装置
JP7666781B2 (ja) 2021-11-11 2025-04-22 新光電気工業株式会社 半導体装置

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US20020024129A1 (en) 2002-02-28
EP1172850A2 (en) 2002-01-16
US6885096B2 (en) 2005-04-26
KR20020006453A (ko) 2002-01-19
KR100430772B1 (ko) 2004-05-10
CN1204623C (zh) 2005-06-01

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