JP4575034B2 - インバータ装置 - Google Patents
インバータ装置 Download PDFInfo
- Publication number
- JP4575034B2 JP4575034B2 JP2004165686A JP2004165686A JP4575034B2 JP 4575034 B2 JP4575034 B2 JP 4575034B2 JP 2004165686 A JP2004165686 A JP 2004165686A JP 2004165686 A JP2004165686 A JP 2004165686A JP 4575034 B2 JP4575034 B2 JP 4575034B2
- Authority
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- Prior art keywords
- conductor
- inverter
- phase
- cooler
- inverter device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000004020 conductor Substances 0.000 claims description 131
- 239000004065 semiconductor Substances 0.000 claims description 99
- 239000011347 resin Substances 0.000 claims description 28
- 229920005989 resin Polymers 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 238000001816 cooling Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 6
- 230000001052 transient effect Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004519 grease Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- -1 aluminum Chemical class 0.000 description 1
- 230000002528 anti-freeze Effects 0.000 description 1
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011156 metal matrix composite Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
本発明の第1及び第2の実施の形態について、図1〜図5を用いて説明する。
両面冷却及びこれらの導体の熱容量の効果により、特許文献1に記載されている図11の電力用半導体装置に比べ約50%低減する。
次に、本発明の第3〜4の実施の形態について、図2を用いて説明する。
本発明の第5の実施の形態について、図6を用いて説明する。
2 電力用半導体装置
3 取付けねじ
4 アルミ電解コンデンサ
5 固定台
6 接続ねじ
7 正極側導体
8 負極側導体
91〜93 3相出力導体
101〜102 電流検出器
11 制御ユニット
12 冷媒
13 流路
14 放熱用金属板
15 絶縁基板
16 金属電極
171 IGBT
181 ダイオード
19 熱伝導グリース
20 導体
21 低融点又は高融点はんだ
22 冷却器
23 絶縁樹脂シート
24 メッキ
25 上側アーム導体
26 下側アーム導体
27 3相出力導体
28 負極導体
29 ボンディングワイヤ
30 正極端子
31 負極端子
32 3相出力端子
33 第1のW相上アーム導体
34 熱緩衝板
35 第2のW相上アーム導体
36 W相絶縁樹脂シート
37 第1のW相下アーム導体
38 第2のW相下アーム導体
39 W相正極端子
40 W相負極端子
41 W相出力端子
42 V相絶縁樹脂シート
43 U相絶縁樹脂シート
44 入出力端子絶縁樹脂シート
45 入出力端子
46 配線用切り欠き部
Claims (4)
- インバータの1つの相の上下いずれか1つのアームを構成する複数個の半導体チップであって、それぞれの正極側電極、負極側電極が同じ向きに一面に並べられた半導体チップと、
この複数個の半導体チップそれぞれの正極側電極に対して同時に1つの接合面にて接合する第1の導体と、
当該複数個の半導体チップそれぞれの負極側電極に対して同時に1つの接合面にて接合する第2の導体と、
前記第1の導体及び前記第2の導体それぞれの前記接合面とは別の底面それぞれに対して、1つの表面が同時に接して前記複数個の半導体チップを冷却する冷却器と、
前記第1の導体及び前記第2の導体それぞれの前記底面と前記冷却器の前記1つの表面とを接着固定するように両者間に介在する、セラミックスを含有した絶縁樹脂シートとを備え、
前記複数個の半導体チップの正極側電極が同時に接合する前記第1の導体の前記1つの接合面及び前記複数個の半導体チップの負極側電極が同時に接合する前記第2の導体の前記1つの接合面が、それぞれ前記冷却器の前記1つの表面及び前記絶縁樹脂シートの表面に対して略垂直となるように、前記第1の導体及び前記第2の導体を前記冷却器上に配置したことを特徴とするインバータ装置。 - 前記第1の導体上に、入出力端子絶縁樹脂シートで絶縁した入出端子を設けたことを特徴とする請求項1記載のインバータ装置。
- 前記半導体チップと前記入出力端子とをボンディングワイヤで接続するとともに、前記第2の導体には、前記ボンディングワイヤが配線可能な切り欠き部を設けたことを特徴とする請求項2に記載のインバータ装置。
- 前記半導体チップからみて前記冷却器とは反対側になる第1の導体及び第2の導体の直上に制御及び駆動基板を設けたことを特徴とする請求項1〜3のいずれか1項に記載のインバータ装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004165686A JP4575034B2 (ja) | 2004-06-03 | 2004-06-03 | インバータ装置 |
PCT/JP2005/010023 WO2005119896A1 (ja) | 2004-06-03 | 2005-06-01 | インバータ装置 |
EP05745741.8A EP1768243B1 (en) | 2004-06-03 | 2005-06-01 | Inverter device |
CN2005800179222A CN1961474B (zh) | 2004-06-03 | 2005-06-01 | 变换器装置 |
US11/628,250 US7605456B2 (en) | 2004-06-03 | 2005-06-01 | Inverter unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004165686A JP4575034B2 (ja) | 2004-06-03 | 2004-06-03 | インバータ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005348529A JP2005348529A (ja) | 2005-12-15 |
JP4575034B2 true JP4575034B2 (ja) | 2010-11-04 |
Family
ID=35463166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004165686A Expired - Lifetime JP4575034B2 (ja) | 2004-06-03 | 2004-06-03 | インバータ装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7605456B2 (ja) |
EP (1) | EP1768243B1 (ja) |
JP (1) | JP4575034B2 (ja) |
CN (1) | CN1961474B (ja) |
WO (1) | WO2005119896A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007067084A (ja) * | 2005-08-30 | 2007-03-15 | Toshiba Corp | 電力用半導体素子及び半導体電力変換装置 |
JP2007215302A (ja) * | 2006-02-08 | 2007-08-23 | Toshiba Corp | インバータ装置 |
JP2007305702A (ja) | 2006-05-10 | 2007-11-22 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2008306793A (ja) * | 2007-06-05 | 2008-12-18 | Toyota Motor Corp | インバータ装置 |
US8687325B2 (en) * | 2008-09-11 | 2014-04-01 | General Electric Company | Micro-electromechanical switch protection in series parallel topology |
JP5100674B2 (ja) * | 2009-01-30 | 2012-12-19 | 株式会社東芝 | インバータ装置 |
US8493762B2 (en) | 2009-12-28 | 2013-07-23 | Kabushiki Kaisha Toshiba | Power semiconductor module and semiconductor power converter provided with the same |
EP2341532B1 (en) * | 2009-12-30 | 2019-05-29 | Kabushiki Kaisha Toshiba | Power semiconductor module and semiconductor power converter provided with the same |
JP5460653B2 (ja) * | 2011-07-14 | 2014-04-02 | 本田技研工業株式会社 | 半導体装置 |
JP5893312B2 (ja) * | 2011-09-27 | 2016-03-23 | 株式会社ケーヒン | 半導体制御装置 |
JP5859790B2 (ja) * | 2011-09-27 | 2016-02-16 | 株式会社ケーヒン | 電力変換装置 |
JP5776588B2 (ja) * | 2012-02-27 | 2015-09-09 | 株式会社豊田自動織機 | 半導体装置 |
JP5997002B2 (ja) * | 2012-10-22 | 2016-09-21 | 株式会社三社電機製作所 | 発熱部品実装回路基板及びその製造方法 |
JP6058353B2 (ja) | 2012-11-02 | 2017-01-11 | 株式会社東芝 | 半導体装置 |
CN103745962B (zh) * | 2013-12-19 | 2017-05-10 | 联合汽车电子有限公司 | 适用于电动汽车逆变器的igbt模块及封装方法和使用方法 |
DE102019214789A1 (de) * | 2019-09-26 | 2021-04-01 | Zf Friedrichshafen Ag | Steuergerät zum Betreiben eines Elektroantriebs für ein Fahrzeug und Verfahren zum Herstellen eines deratigen Steuergeräts |
Citations (6)
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JPH08274482A (ja) * | 1995-03-29 | 1996-10-18 | Mitsubishi Electric Corp | 制御盤 |
JP2000014149A (ja) * | 1998-06-17 | 2000-01-14 | Denso Corp | Dc−dcコンバータ装置 |
JP2000278936A (ja) * | 1999-03-19 | 2000-10-06 | Idec Izumi Corp | スイッチング電源装置 |
JP2000295864A (ja) * | 1999-04-05 | 2000-10-20 | Toshiba Corp | 電力変換装置 |
JP2003153554A (ja) * | 2001-11-13 | 2003-05-23 | Honda Motor Co Ltd | インバータ装置及びその製造方法 |
JP2004140068A (ja) * | 2002-10-16 | 2004-05-13 | Nissan Motor Co Ltd | 積層型半導体装置およびその組み立て方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794669A (ja) | 1993-09-20 | 1995-04-07 | Toshiba Corp | 半導体パッケ−ジモジュ−ル |
US5956231A (en) * | 1994-10-07 | 1999-09-21 | Hitachi, Ltd. | Semiconductor device having power semiconductor elements |
US6188575B1 (en) * | 1998-06-30 | 2001-02-13 | Intersil Corporation | Heat exchanging chassis and method |
EP2244289B1 (en) * | 2000-04-19 | 2014-03-26 | Denso Corporation | Coolant cooled type semiconductor device |
CN1174484C (zh) | 2000-11-17 | 2004-11-03 | 矽品精密工业股份有限公司 | 具有散热结构的半导体封装件 |
JP2003031732A (ja) | 2001-07-19 | 2003-01-31 | Hitachi Ltd | 絶縁型半導体装置 |
EP1363026A3 (en) * | 2002-04-26 | 2004-09-01 | Denso Corporation | Invertor integrated motor for an automotive vehicle |
JP3786356B2 (ja) | 2002-04-26 | 2006-06-14 | 株式会社デンソー | 車両用インバータ一体型電動コンプレッサ |
JP3879688B2 (ja) * | 2003-03-26 | 2007-02-14 | 株式会社デンソー | 半導体装置 |
JP2006190972A (ja) * | 2004-12-08 | 2006-07-20 | Mitsubishi Electric Corp | 電力用半導体装置 |
-
2004
- 2004-06-03 JP JP2004165686A patent/JP4575034B2/ja not_active Expired - Lifetime
-
2005
- 2005-06-01 US US11/628,250 patent/US7605456B2/en active Active
- 2005-06-01 CN CN2005800179222A patent/CN1961474B/zh active Active
- 2005-06-01 EP EP05745741.8A patent/EP1768243B1/en active Active
- 2005-06-01 WO PCT/JP2005/010023 patent/WO2005119896A1/ja not_active Application Discontinuation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08274482A (ja) * | 1995-03-29 | 1996-10-18 | Mitsubishi Electric Corp | 制御盤 |
JP2000014149A (ja) * | 1998-06-17 | 2000-01-14 | Denso Corp | Dc−dcコンバータ装置 |
JP2000278936A (ja) * | 1999-03-19 | 2000-10-06 | Idec Izumi Corp | スイッチング電源装置 |
JP2000295864A (ja) * | 1999-04-05 | 2000-10-20 | Toshiba Corp | 電力変換装置 |
JP2003153554A (ja) * | 2001-11-13 | 2003-05-23 | Honda Motor Co Ltd | インバータ装置及びその製造方法 |
JP2004140068A (ja) * | 2002-10-16 | 2004-05-13 | Nissan Motor Co Ltd | 積層型半導体装置およびその組み立て方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1768243A4 (en) | 2011-03-30 |
US7605456B2 (en) | 2009-10-20 |
CN1961474B (zh) | 2010-05-05 |
EP1768243B1 (en) | 2017-07-26 |
EP1768243A1 (en) | 2007-03-28 |
US20070217241A1 (en) | 2007-09-20 |
CN1961474A (zh) | 2007-05-09 |
WO2005119896A1 (ja) | 2005-12-15 |
JP2005348529A (ja) | 2005-12-15 |
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