CN1855476A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN1855476A
CN1855476A CNA2006100741536A CN200610074153A CN1855476A CN 1855476 A CN1855476 A CN 1855476A CN A2006100741536 A CNA2006100741536 A CN A2006100741536A CN 200610074153 A CN200610074153 A CN 200610074153A CN 1855476 A CN1855476 A CN 1855476A
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Prior art keywords
board
semiconductor device
flexible base
chip
electrode
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Granted
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CNA2006100741536A
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CN1855476B (zh
Inventor
角田哲次郎
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47G—HOUSEHOLD OR TABLE EQUIPMENT
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    • A47G1/06—Picture frames
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Abstract

依据本发明的一个形态，提供可容易且高可靠性地实现与半导体芯片上的多个芯片电极连接的半导体装置。本发明的一个形态的半导体装置设有：外壳；设在所述外壳内的绝缘基板；安装在所述绝缘基板上的、具有流过控制电流的第一芯片电极的多个半导体芯片；以及具有主体部及从该主体部延伸的多个引线部的柔性基板，其特征在于，所述第一芯片电极的各电极电气连接至对应的所述引线部。

Description

半导体装置
技术领域
本发明涉及半导体装置，特别涉及可容易地实现内装的半导体芯片与控制电路间的电气连接的功率用半导体装置。
背景技术
迄今为止，半导体装置在各式各样的技术领域中得到应用，其中，对大功率的电动机进行控制、输出大电流的电源模块作为在近未来产业中的重要关健器件而受到越来越多的注目。
这样的电源模块(未作图示)大致设有：外壳；设在外壳内的绝缘基板；装在绝缘基板上的功率器件芯片(绝缘栅型双极晶体管(IGBT)芯片及续流二极管(FWD)芯片)；包含向功率器件芯片供给控制信号(控制电流)的控制电路的控制基板；以及根据控制信号将用以从功率器件芯片输出的被控电流向电动机等的外部负载导出的引线框。
依据现有的功率模块，控制基板一般由用环氧树脂等板状形成的坚固的印刷电路布线基板构成。另外，在印刷电路布线基板上形成有至少一个控制电路和多个连接用端子，通过多根导线(金属丝)，将例如IGBT芯片的栅电极电气连接到连接用端子上。这样一来，从控制电路向IGBT芯片的栅电极供给栅信号，IGBT芯片根据该栅信号进行高速开关动作。
另一方面，在现有的功率模块中，IGBT芯片和反向并联连接的FWD芯片的阳极电极以及IGBT芯片的发射极电极同样是通过多根导线(金属细线)电气连接到引线框上。亦即(未作详细图示)，用4根导线将各IGBT芯片的发射极电极和FWD芯片的阳极电极电气连接到引线框上，同样，在用4根导线将各IGBT芯片的控制电极(栅电极、电流传感电极以及温度传感电极)电气连接到控制基板的电极用端子上的情况下，共需8根导线。另外，在电源模块整体中有6组(三个相的相脚)的IGBT芯片以及FWD芯片的情况下，至少需48根导线。
但是，将这样数量众多的导线用现有的超声导线焊接方法连接，需要太多的时间，存在着制造成本增大，不能便宜制造电源模块的问题。
因此，已经找到了用以在多个端子间容易且总括地进行电气连接的技术。例如，专利文献1公开了半导体芯片1的芯片电极通过焊锡球2及焊锡层而连接到柔性基板5的铜布线5b上的电源模块，其中设有：绝缘基板4；包含形成在绝缘基板4上的铜布线8b的一对树脂基板8；在一对树脂基板8之间配置在绝缘基板4上的散热片3；安装在散热片3上的半导体芯片(IGBT芯片)1；以及包含用焊锡固定在一对树脂基板8的铜布线8b上的铜布线5b的柔性基板5。亦即，柔性基板5的设置在两端部的端子被连接至树脂基板8上，设置在其中央部的一对端子(栅电极用及发射极电极用)通过焊锡连接至IGBT芯片1的芯片电极(栅电极及发射极电极)上。
专利文献1特开2004-111619号公报(图1～图3)
发明内容
但是，将柔性基板5的栅电极用和发射极电极用的端子连接至各IGBT芯片1上的相互邻接的栅电极和发射极电极时，如果它们不能相互正确对位，则栅电极用(或发射极电极用)的端子往往会桥接(短接)栅电极和发射极电极。但是，柔性基板5的基材5a由树脂构成，容易受周围温度的影响，特别是在焊锡连接(曝露在高温状态下)时，难以将柔性基板5相对于IGBT芯片1正确对位。换言之，如果不能将柔性基板5相对于IGBT芯片1正确对位，则会产生短路缺陷，成品率下降，如果要正确对位，则由于装配作业性低，生产成本会上升。
再者，由于形成在柔性基板5上的铜布线5b是设置在树脂上方的导电性薄膜，在减小其布线电阻上存在限度。因而，在IGBT芯片1的集电极-发射极间流过大电流的情况下，铜布线5b发生过热，往往会导致柔性基板5软化、熔融，不能确保动作的充分可靠性。
因此，本发明一个形态的目的在于，提供具有下列特征的半导体装置，其中设有：外壳；设在上述外壳内的绝缘基板；安装在绝缘基板上的、含有流过控制电流的第一芯片电极的多个半导体芯片；以及含有主体部及从该主体部延伸的多个引线部的柔性基板；上述第一芯片电极的各电极电气连接至对应的上述引线部。
依据本发明的一个形态构成的半导体装置，可以容易且高可靠地实现与半导体芯片上的多个芯片电极的连接。
附图说明
图1是表示本发明实施例1的半导体装置的平面图。
图2是从图1的II-II线观看的剖面图。
图3是示于图1和图2的半导体装置的电路图。
图4是表示实施例2的半导体装置的平面图。
图5是从图4的IV-IV线观看的剖面图。
图6是表示柔性基板的引线部、引线框及芯片电极的放大平面图。
图7是从图6的VI-VI线观看的剖面图。
图8是与表示实施例2的变形例的图7同样的剖面图。
图9是与表示实施例3的半导体装置的图2同样的剖面图。
图10是表示将柔性基板的引线部连接到芯片电极前后的状态的放大剖面图。
图11是与表示实施例3的变形例的图4同样的平面图。
图12是从图11的VI-VI线观看的剖面图。
图13是与表示实施例4的半导体装置的图4同样的平面图。
图14是与表示实施例4的半导体装置的图5同样的剖面图。
标记说明
1～4电源模块(功率用半导体装置)、10基板、12外壳、14绝缘基板、16，17金属薄板、20绝缘栅型双极晶体管(IGBT)、22续流二极管(FWD)、26控制电极、28发射极电极、30阳极电极、32，33平坦部、34柔性基板、36引线部、37下面、38端部、39上面、40主体部、42引线框、44连接件、45引脚、46导线(金属细线)、50引线框、52，54突出部、56，60焊锡、58导电凸起、62弹性构件、64压紧构件、66控制IC芯片。
具体实施方式
下面，参照附图说明本发明的功率用半导体装置(电源模块)的实施例。在各实施例的说明中，为便于理解，适当使用了表示方向的用语(例如，「上方」及「下方」等)，这些用语是为了说明之目的而使用的，并不对本发明构成限制。
实施例1
下面参照图1及图2，就本发明的半导体装置(电源模块)的实施例1进行说明。实施例1的电源模块1如图1及图2所示，大体上设有：由具有良好热传导性的铜等金属板构成的金属基板10；以及由固定在金属基板10上的树脂等绝缘材料构成的外壳12。
另外，在电源模块1的外壳12的内部，设有通过焊锡等导电性接合材料(未图示)固定在金属基板10上的绝缘基板14。绝缘基板14的一对主面(表面及背面)上有经图案化的金属薄板16、17。再者，在表面侧的金属薄板16的上方，同样通过焊锡等导电性接合材料(未图示)装有至少一个半导体元件(在图1及图2中，例如，绝缘栅型双极晶体管(IGBT)20和续流二极管(FWD)22)。而且，IGBT20在上侧主面上有控制电极26及发射极电极28，FWD22在上侧主面上有阳极电极30。控制电极26不限于仅为控制电极，也包含栅电极、电流传感电极以及温度传感电极。
外壳12在图2中，具有设在与IGBT20和FWD22的上侧主面大致相同高度(水平位置)上的一对平坦部32、33。而且，实施例1的电源模块1在邻近IGBT20的一方的平坦部32上设有：用任意接合手段固定的柔性基板34；以及支持在邻近FWD22的另一平坦部33上，贯通外壳12而向外侧延伸的多个引线框42。亦即，柔性基板34的背面37与IGBT20的控制电极26和发射极电极28的表面基本上设在同一平面上。
在实施例1的柔性基板34的聚酰亚胺树脂等可挠性绝缘膜上层叠铜图案，即使在弯折等机械应力和机热周期(heat cycle)时有热应力产生的情况下，也会柔软地变形，可以缓和这些应力。
另外，如图1所示，具有多根(图1中是6根)细长的引线部36和具有大致成矩形的平面形状的主体部40，在各引线部36的下面37上，叠层多根(例如4根)细长的铜图案(未图示)。
再者，IGBT20的各控制电极26经由引线部36的各铜图案的端部38电气连接至安装在柔性基板34上的控制IC芯片66的各端子上。另外，在柔性基板34上配设连接件44，控制IC芯片66的各端子经由柔性基板34上的铜图案以及连接件44的引脚45电气连接至外部的控制电路(未图示)。
这样，柔性电路基板34的主体部40具有朝向绝缘基板14的边，图1所示的引线部36从朝向绝缘基板34的主体部40的一边延伸。但是，引线部36也可以从具有由4边构成的大致矩形的平面形状的主体部40的任意一边或多边(未作图示)延伸。
另一方面，各引线框42通过由铝等金属构成的导线(金属细线)46连接至各FWD22的阳极电极30和各IGBT20的发射电极28。这样，各IGBT20和FWD22相互反向并联连接。
通常，电源模块1中，在绝缘基板14、半导体元件(IGBT20和FWD22)、柔性基板34以及导线46的上方，为了保护这些构成部件，设有充填在外壳12内的硅凝胶、用以密封其上方的环氧树脂以及覆盖其上方的盖，为了便于说明，附图中省略了这些硅凝胶、环氧树脂及盖。
以下参照图3，就图1及图2所示的电源模块1的电路结构进行详细说明。
该电源模块1设有3相(U相、V相、W相)的变换器电路，各变换器电路由低电位侧的IGBT20与FWD22的管对和高电位侧的IGBT20与FWD22的管对构成。例如，在图1和图3中，最上方所示的是低电位侧的IGBT20与FWD22的一对，构成U相的变换器电路的一部分。另外，邻近于最上方的(下方)图示的是高电位侧的IGBT20和FWD22的一对，同样构成U相的变换器电路的一部分。再者，依次图示V相的低电位侧及V相的高电位侧、W相的低电位侧及W相的高电位侧的IGBT20和FWD22的一对。
另外，在各相的变换器电路中，低电位侧的IGBT20和FWD22具有各自的发射极电极28和阳极电极30，这些电极通过导线46电气连接至引线框42上。该引线框连接至直流驱动电源(未图示)的负极端子上。在各相的变换器电路中，高电位侧的IGBT20与FWD22具有各自的集电极电极和阴极电极，这些电极通过同样的金属薄板16及(图1)中最下方图示的)导线46电气连接至引线框42上，该引线框被连接至直流驱动电源的正极端子上。
再者，图3中安装有低电位侧的IGBT20与FWD22的金属薄板16，通过导线46电气连接至引线框42和对应的高电位侧的IGBT20的发射极电极28和FWD22的阳极电极30。图1中未详细图示引线框的平面形状，图中，配置在最上方的引线框42连接至U相的驱动端子，其下方依次图示出连接至V相及W相的驱动端子上的引线框42。
还有，在图1中未详细图示但如图3所示：各IGBT20具有包括栅电极、电流传感电极以及温度传感电极的控制电极26，通过设在各引线部36上的细长的铜图案与控制IC芯片66电气连接。
在这样构成的电源模块1中，引线部36的铜图案的各端部38(后文详述)通过焊锡等任意的导电性接合剂或连接手段可以容易地总括连接到IGBT20的控制电极26。这样，外部的控制电路可以通过连接件44的引脚45、控制IC芯片66以及柔性基板34的引线部36(及其端部38)实现与IGBT20的数据信号收发(通信)。
其结果，IGBT20根据加在控制电极26上的控制信号进行开关动作，发射极电极28、通过导线46及引线框42向外部负载供给大电流(被控电流)。亦即，依据本发明的实施例1，作为大电流的被控电流通过比上述现有技术的柔性基板上的铜布线更小的布线电阻的导线46流动，因此不会发生导线过热，可以实现高可靠性的电源模块。
另外，如上所述，由于柔性基板34的背面37和IGBT20的控制电极26及发射极电极28的表面基本上配置在同一平面上，可以使引线部36上产生的应力变得极小，可以得到高可靠性的电源模块。再者，可以合理地缩短引线部36的长度，因此可降低制造成本。
实施例2
参照图4～图8，下面就本发明的功率用半导体装置的实施例2进行说明。实施例2的电源模块2中，为了电气连接各IGBT20的发射极电极28、各FWD22的阳极电极30及引线框，除了用延伸的引线框50代替导线46这一点以外，具有与实施例1同样的结构，因此省略有关重复部分的详细说明。另外，对于与实施例1同样的构成部件，使用同样的标记进行说明。
如上所述，实施例2的引线框50，如图5所示，设有被支持在外壳12上、延伸至各FWD22的阳极电极30及各IGBT20的发射极电极28的上方、朝向阳极电极30及发射极电极28弯折的弯折部(突出部)52、54。如图6和图7的放大图所示，各引线框50的弯折部52、54向各FWD22的阳极电极30和各IGBT20的发射极电极28突出，通过焊锡56等的导电性接合剂电气连接至阳极电极30和发射极电极28。
另外，在柔性基板34的引线部36的端部38上，形成导电性的凸起58，同样，通过焊锡60等导电性接合剂电气连接至各IGBT20的控制电极26。如此，可以将引线部36与控制电极26之间牢固连接。再者，导电性接合剂除了焊锡56、60之外，也可以是任意的导电膏。
再者，各引线框50的弯折部52、54除了图7所示的形状以外，也可以是如图8所示的、向阳极电极30及发射极电极28突出的突出部52、54，同样，也可以在控制电极26上形成导电凸起58，而不是将该凸起设置在柔性基板34的端部38上。
同样，构成一个相脚的一组IGBT20和FWD22中，连接低电位侧的IGBT20的发射极电极28和FWD22的阳极电极30的引线框50具有用以电气连接至搭载了高电位侧的IGBT20及FWD22的绝缘基板14的金属薄板16的弯折部(如图4的虚线所示)68。还有，弯折部68和绝基板14的金属薄板16可以通过焊锡等任意的导电性接合剂进行电气连接。
在这样构成的电源模块2中，各IGBT20的发射极电极28和各FWD22的阳极电极30与控制电极26一样，容易通过引线框50总括地连接。
另外，一旦IGBT20根据加在控制电极26上的控制信号进行开关动作，就可以通过发射极电极28及引线框50向外部负载供给大电流的被控电流。亦即，依据本发明的实施例2，由于大电流的被控电流通过比布线电阻更小的引线框50流动，电源模块2的一部分的电流路径不会发生过热、断线，可以实现高可靠性的电源模块。
实施例3
下面参照图9～图12，就本发明的功率用半导体装置的实施例3进行说明。实施例3的电源模块3中，除了柔性基板34的引线部36包含弹性构件且外壳12的一方的平坦部32设在比IGBT20及FWD22的上侧主面更高的位置上这一点之外，具有与实施例2同样的结构，因此省略重复部分的详细说明。另外，对于与实施例2同样的构成部件，用同样的标记进行说明。
如上所述，电源模块3的柔性基板34的主体部40，如图9所示，设在比IGBT20及FWD22的上侧主面更高的的位置上，如图10(a)及(b)所示，引线部36包含沿纵向延伸的弹性构件62。图10(a)和(b)分别表示柔性基板34的主体部40固定在外壳12的一方的平坦部32上，引线部36的端部38连接在IGBT20的控制电极26上的前后状态的剖面图，而弹性构件62固定在主体部40上，一旦引线部36的端部38连接至控制电极26上方，设在端部38的导电凸起58就向控制电极26的一方压紧(被压上)。亦即，弹性构件62只要在被装配后能向控制电极26压上，可以具有任意的形状，例如，可以是金属薄板。另外，弹性构件62在图10(a)及(b)中设于引线部36内部，而也可以粘贴于引线部36的上面39。
因而，依据电源模块3，由于弹性构件62将被设置在端部38上的导电凸起58压在控制电极26上，无需使用焊锡等导电性接合剂，容易总括地连接与各引线部36对应的控制电极26。这样，可以省略焊锡连接时的热处理工序，因此柔性基板34上不必采用高耐热性的构件，可以使用更便宜的柔性基板。再者，在电源模块3内的IGBT芯片20有缺陷时，由于控制电极26没有通过焊锡来连接，可容易地将引线部36从控制电极26卸下。
但是，为了将导电凸起58与控制电极26间的电连接做得更加强固，也可在将导电凸起58压在控制电极26上之后追加焊锡工序。
再者，如图11和图12所示，也可将用以向IGBT芯片20压紧柔性基板34的引线部36的压紧构件64安装在外壳上。另外，在图11和图12中，压紧构件64在接近于柔性基板34的主体部40的位置处固定在外壳12上，但也可配置在接近于柔性基板34的端部38的位置或导电凸起58的正上方。这样，可以将导电凸起58连接至控制电极26上，可以取得与实施例3同样的效果。
实施例4
参照图13和图14，下面就本发明的功率用半导体装置的实施例4进行说明。实施例4的电源模块4除了没有将用以将控制信号供给控制电极26的控制IC芯片安装在柔性基板34的主体部40上这一点之外，具有与实施例2同样的结构，因此省略有关重复部分的详细说明。另外，对于与实施例2同样的构成部件，使用同样的标记进行说明。
依据实施例2的电源模块2，设有用以将控制信号供给控制电极26的多个控制IC芯片66，但实施例4的电源模块4上没有控制IC芯片，控制信号从外部电路装置(未图示)直接供给引线部36的各端部38。
因而，依据实施例4，与至此为止说明过的实施例的电源模块一样，可以实现可以将引线部36的各端部38容易地总括连接至IGBT20的控制电极26的高可靠性的电源模块4。
另外，如实施例1中说明过的那样，引线部36也可以从大致具有矩形的平面形状的主体部的任意边延伸而构成，例如，在图13中，将绝缘基板14配置在柔性基板34的左侧，而将另一绝缘基板(未图示)配置在柔性基板34的右侧，可以将向各绝缘基板上的IGBT芯片供给的栅信号用安装在同一柔性基板34上的多个控制IC芯片66进行控制。这样，可以增大电源模块的设计自由度。
再者，在上述的实施例中，FWD芯片(第2半导体芯片)22不是本发明必需的构成部件，可以省略，本发明的第一半导体芯片20除了IGBT芯片之外，也可以是双极达林顿晶体管、MOSFET以及将SiC用作基板材料的任意半导体芯片。

Claims (12)

1.一种半导体装置，其特征在于：
包括：外壳；
设在所述外壳内的绝缘基板；
安装在所述绝缘基板上的、具有流过控制电流的第1芯片电极的多个半导体芯片；以及
具有主体部和从该主体部延伸的多个引线部的柔性基板，
各所述第1芯片电极电气连接至各自的所述引线部。
2.如权利要求1所述的半导体装置，其特征在于：所述半导体芯片的所述第1芯片电极和所述柔性基板的所述引线部通过焊锡电气连接。
3.如权利要求2所述的半导体装置，其特征在于：在所述半导体芯片的所述第1芯片电极和所述柔性基板的所述引线部中的任一方上形成导电凸起。
4.如权利要求1所述的半导体装置，其特征在于：所述半导体芯片的所述第1芯片电极和所述柔性基板的所述引线部通过将所述引线部压接到所述第1芯片电极上而电气连接。
5.如权利要求4所述的半导体装置，其特征在于：所述柔性基板的所述引线部包含将该引线部向所述第1芯片电极压上的弹性构件。
6.如权利要求4所述的半导体装置，其特征在于：用以将所述柔性基板的所述引线部向所述第1芯片电极压紧的压紧构件固定在所述外壳上。
7.如权利要求1所述的半导体装置，其特征在于：
所述柔性基板的所述主体部具有由4边构成的任意的矩形平面形状；
所述引线部从所述柔性基板的所述主体部的任意边延伸。
8.如权利要求1所述的半导体装置，其特征在于：所述柔性基板的背面配置成与所述第1芯片电极的表面基本在同一平面上。
9.如权利要求1所述的半导体装置，其特征在于：所述柔性基板的所述主体部设有向所述第1芯片电极供给控制电流的控制电路部。
10.如权利要求1所述的半导体装置，其特征在于：
所述半导体芯片具有流过由流过所述第1芯片电极的控制电流控制的被控电流的第2芯片电极；
半导体装置还设有电气连接至各自的所述第2芯片电极的、向外壳的外侧延伸的多个引线框。
11.如权利要求10所述的半导体装置，其特征在于：所述引线框具有突出部，用该突出部和焊锡电气连接至所述半导体芯片的所述第2芯片电极。
12.如权利要求1所述的半导体装置，其特征在于：
所述半导体芯片是绝缘栅型双极晶体管；
还设有搭载在所述控制基板上的多个续流二极管，它们与各自的所述绝缘栅型双极晶体管反向并联连接。
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