CN100373604C - 高功率mcm封装 - Google Patents

高功率mcm封装 Download PDF

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Publication number
CN100373604C
CN100373604C CNB038198134A CN03819813A CN100373604C CN 100373604 C CN100373604 C CN 100373604C CN B038198134 A CNB038198134 A CN B038198134A CN 03819813 A CN03819813 A CN 03819813A CN 100373604 C CN100373604 C CN 100373604C
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chip module
module according
contact
web part
semiconductor element
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CNB038198134A
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CN1675765A (zh
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C·P·斯卡佛
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Infineon Technologies North America Corp
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International Rectifier Corp USA
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Abstract

一种多芯片模块(54)包括导电元件，该导电元件用作连接器，用于电连接至少两个功率半导体器件(30、42)的各个电接触件并用作输出连接器。导电元件提高了通过模块的顶部传递来自功率半导体器件的热量的性能。

Description

高功率MCM封装
相关申请
本申请基于2002年7月15日提交的第60/396,342号的美国临时专利申请，并要求其优先权。
技术领域
本发明涉及多芯片模块，特别涉及多芯片电源模块。
背景技术
多芯片模块(MCM)是公知的。典型的MCM包括设置在一个或多个衬底上的多个不同元件，其中衬底被封闭在模制外壳内。不同元件形成用于例如驱动电机的电子电路。这种电路通常包括可以按照各种方式彼此连接在一起的功率半导体器件。
用于驱动电机的常规电路布置公知为半桥式的。半桥布置包括串联连接的两个功率半导体器件。用在半桥布置中的典型的功率半导体器件是MOSFET，尽管其它功率半导体器件也可以使用。
图1示出了使用一对串联连接的MOSFET 10、12的半桥布置。如图1所示，MOSFET 10的源电极电连接到MOSFET 12的漏电极上。在这种结构中，输入电压Vin连接到MOSFET 10的漏电极上，而MOSFET 12的源电极接地。输出电压Vout在MOSFET 10和MOSFET12的连接节点处抽头。通常，一个或多个肖特基(schottky)二极管14在输出节点Vout和地之间与MOSFET 12并联连接，从而使停滞时间(dead-time)传导周期(conduction period)期间的损失最小。
半桥布置被广泛地用在电源装置中。图2示意性地示出了MCM中的常规半桥布置。参见这些图，根据常规布置，MOSFET 10、12设置在公共电路板18上。电路板18可以是导热的，从而可以将在工作期间由MOSFET产生的热量传输到散热器(未示出)，而散热器可以设置成与电路板18热接触。合适的电路板18可以是绝缘金属衬底(IMS)。如图2所示，每个MOSFET 10、12的漏电极10A、12A电连接到衬底18上的各个导电焊盘22、24。为了完成半桥，MOSFET 10的源电极10B例如通过路由器电连接到MOSFET 12的漏电极12A，MOSFET 12的源电极12B连接到地，MOSFET 10的漏电极10A连接到电压源，如图2中示意性地示出的。任选地，如图2所示，肖特基二极管14可以连接在MOSFET 12的漏电极12A和源电极12B之间，如本领域公知的那样。
发明内容
本发明的目的是提供一种呈现改进的热处理的紧凑MCM。
根据本发明优选实施例的MCM包括传统的功率半导体器件，如常规的垂直传导MOSFET，和设置成半桥结构的倒装片(flip-chip)。如这里使用的，倒装片是使其控制电极和源电极连接到电路板上的各个焊盘的功率半导体器件。根据本发明的一个方案，使用公共导电元件将一个功率半导体器件的漏电极电连接到另一个功率半导体器件的源电极上。功率半导体器件的其它电极连接到电路板上的各个焊盘上。
导电元件包括连接到功率半导体器件的腹板部分(web portion)以及一体地连接到腹板部分的连接器，该连接器用作将腹板部分连接到电路板上的各个导电焊盘上的电连接。因此连接器用作到半桥的输出节点的连接。
根据本发明的第一实施例，连接器从导电元件的腹板部分的一端延伸出去。即，导电元件是L形的。
根据第二实施例，连接器从腹板部分的相对端之间的位置延伸出去。即，导电元件是T形的。
根据第三实施例，腹板部分包括在其相对边缘上接触的球，从而代替了整体的连接器。
将从参照附图的本发明的下面说明中更明显看出本发明的其它特征和优点。
附图说明
图1表示根据现有技术的半桥电路的电路结构；
图2表示用在根据现有技术的常规MCM中的半桥结构；
图3表示根据本发明的结构；
图4表示根据本发明的MCM布局的顶部平面图；
图5表示在箭头方向沿着线5-5看到的根据本发明第一实施例的MCM的剖面图；
图6表示在箭头方向沿着线5-5看到的根据本发明第二实施例的MCM的剖面图；
图7示意性地表示根据本发明第三实施例的MCM的一部分的剖面图；
图8A-8C表示用在根据本发明的MCM中的公共导电元件的变形；
图9示意性地表示根据本发明第四实施例的MCM的一部分的剖面图。
具体实施方式
参见图3，根据本发明的MCM包括半桥电路，它是通过一对串联连接的功率半导体器件来实现的，其中一个功率半导体器件是常规器件，另一个是倒装片。根据本发明的优选实施例，第一个功率半导体器件是常规垂直传导功率MOSFET 30，它具有设置在其第一主表面上的源极接触件32和栅极接触件34以及位于其相对的第二主表面上的漏极接触件36。功率MOSFET 30的漏极接触件36例如通过焊料层或导电环氧树脂电连接到导电焊盘38上。导电焊盘38是印刷电路板40的一部分。印刷电路板40可以是被绝缘的金属衬底(IMS)或双键合铜(DBC)，它包括其上设置导电焊盘38的导热但电绝缘的衬底39。引线框架结构可以代替印刷电路板而不脱离本发明。
根据本发明的一个方案，本发明的MCM中的另一个功率半导体器件是倒装式MOSFET 42。倒装式MOSFET 42包括在一个主表面上的漏电极44和在其相对主表面上的源电极46和栅电极48。源电极46电连接到导电焊盘50，而栅电极48电连接到导电焊盘52。导电焊盘50和导电焊盘52设置在衬底39和电路板40的形成部分上。可选地，肖特基二极管(未示出)在输出节点和地之间与倒装片42并联连接，以便使停滞时间(dead-time)传导期间的损失最小。
如图3示意性地示出的，根据本发明的半桥电路通过将MOSFET30的源极接触件32直接连接到倒装式MOSFET 42的漏极接触件44上来实现，从而获得图1所示的串联连接。在图3所示的优选结构中，导电焊盘38用作输入连接点Vin，而导电焊盘50用作地连接点。在优选实施例中，输出连接点Vout是MOSFET 30的源极接触件32和倒装式MOSFET 42的漏极接触件44之间的点。
图4示出了根据本发明的MCM 54的顶部平面图。MCM 54包括其上设置多个元件C1、C2、C3、C4的印刷电路板40。根据本发明的一个方案，MCM 54也包括导电元件56。导电元件56用于将功率半导体器件如常规MOSFET 30(图3)连接到倒装片半导体器件，如倒装式MOSFET 42(图3)，并且还用作根据图3所示布置的输出连接点。如传统公知的，模制外壳58包封设置在电路板40上的所有元件。形成在电路板40上的电路可以经外部引线(未示出)连接到外部部件上，其中外部引线可以设置在模制外壳58的外部的任何位置上。例如，外部引线可以按照球栅阵列(BGA)或基板阵列格式(land array format)设置在MCM 54的边缘上或设置在电路板40的底表面上。
图5示出了在箭头方面看到的沿着线5-5的MCM 54的剖面图。如图5所示，根据本发明第一实施例，MCM 54包括导电元件56。导电元件56包括腹板部分60，该腹板部分60将倒装式MOSFET 42的漏极接触件44连接到常规MOSFET 30的源极接触件32上。如前面参照图3所述的，倒装式MOSFET 42的源极接触件46通过导电层62如焊料或导电环氧树脂电连接到导电焊盘50。同样，倒装式MOSFET 42的栅极接触件48通过导电层62电连接到导电焊盘52。常规MOSFET30的漏极接触件36也通过导电层62电连接到导电焊盘38。
根据本发明的一个方案，导电元件56还包括连接器64，连接器64从其一端伸出并通过导电层62电连接到导电焊盘66。腹板部分60和连接器64彼此成一体，并且在本发明的优选实施例中，它们形成一个主体。
在根据本发明的MCM中，导电焊盘66用作半桥电路的输出Vout(图3)，而导电焊盘50和导电焊盘38分别连接到地和输入Vin(图3)。
图6表示根据本发明第二实施例的MCM 54的剖面图。图6所示的剖面图是在其中所示的箭头方向看到的沿着图4的线5-5截取的。在图6所示的实施例中，导电元件56包括设置在常规MOSFET 30和倒装式MOSFET 42之间的连接器64。此外，第二实施例的所有特征与第一实施例的相同，因此这里不再说明。
如图5和6所示，常规MOSFET 30和倒装式MOSFET 42被夹在导电元件56的腹板部分60和电路板40之间，因此，由于它们各自的厚度，使导电元件56的腹板部分60与电路板40隔开。因此，为了电连接导电焊盘66，导电元件56的连接器64延伸到导电焊盘66。
如从图5清楚看出的，导电元件56是L形的，导电元件56的连接器64设置在其一端。如本发明第二实施例中使用的导电元件56可以是T形的，因此将其连接器64设置在腹板部分60的中间附近的任何位置上，如图6所示。
参见图7，根据本发明第三实施例的MCM 54包括导电元件56，它具有平坦的腹板部分60，与第一和第二实施例相同，该腹板部分60将倒装式MOSFET 42的漏极接触件44连接到常规MOSFET 30的源极接触件32。如本发明第三实施例中使用的导电元件56可以是IMS，它具有用作平坦腹板部分60的金属导电层、导热但电绝缘的陶瓷体67以及与腹板部分60相对设置的另一个金属导电层61。在第三实施例中使用IMS允许合适地布线以及常规MOSFET 30的栅电极(未示出)的连接。
本发明第三实施例中的导电元件56还包括连接器64。本发明第三实施例中的连接器64是连接到导电焊盘66和腹板部分60的导电球。在第三实施例中，常规MOSFET 30的漏极接触件36以及倒装式MOSFET 42的源极接触件46和栅极接触件48通过导电球68连接到各个导电焊盘38、50、52。
参见图8A-8C，根据本发明的导电元件56可以包括其它增强装置。例如，如图8A所示，根据第一实施例的公共导电元件56可包括在其顶表面上的脊70。脊70增加了导电元件56的顶表面面积，这可帮助消散更多的热量并帮助导电元件56更好地粘接到MCM 54的模制外壳58的树脂模具上。
参见图8B，根据第一实施例的导电元件56可包括设置在其相对边缘上的一对凹槽72、74。凹槽72、74允许树脂模具形成在导电元件56的周围，由此获得导电元件56和模制外壳58的树脂模具之间的更好的粘接性。
参见图8C，根据第一实施例的导电元件56可以只形成为具有一个凹槽72。
图8A-8C中所示的所有增强装置也可以适用于第二和第三实施例中使用的导电元件56。
参见图9，根据本发明第四实施例，导电元件56可以通过模制外壳58露出，从而提高从MCM的顶部进行的散热。
在本发明的优选实施例中，导电元件56可以由铜或铜合金构成。但是，在不脱离本发明的情况下也可以使用其它合适材料。
而且，在本发明的优选实施例中，形成半桥电路的功率半导体器件可以是MOSFET。其它的功率半导体器件如IGBT、功率双极晶体管、半导体闸流管和功率二极管等，可以代替根据本发明的包括导电元件56的MCM中的一个或两个功率半导体器件。
尽管前面已经关于其特殊实施例介绍了本发明，很多其它改形和修改方式以及其它用途对于本领域技术人员是很明显的。优选地，本发明不受种类具体公开的限制，而只受所附权利要求的限制。

Claims (17)

1.一种多芯片模块，包括：
具有设置在其主表面上的第一导电焊盘、第二导电焊盘和第三导电焊盘的衬底；
导电元件，所述导电元件包括腹板部分和从所述腹板部分的第一主表面伸出的连接器；
第一半导体管芯和第二半导体管芯，每个半导体管芯具有设置在其第一主表面上的第一接触件和设置在其第二相对主表面上的第二接触件；
其中所述第一半导体管芯的所述第一接触件电连接到所述第一导电焊盘，所述第二半导体管芯的所述第二接触件连接到所述第二导电焊盘，所述连接器连接到所述第三导电焊盘，并且所述第一半导体管芯的所述第二接触件和所述第二半导体管芯的所述第一接触件连接到所述腹板部分的所述第一主表面上。
2.根据权利要求1所述的多芯片模块，其中所述衬底是绝缘金属衬底、双键合铜或引线框架结构之一。
3.根据权利要求1所述的多芯片模块，其中所述半导体管芯是MOSFET，其所述第一接触件是源极接触件，其所述第二接触件是漏极接触件。
4.根据权利要求1所述的多芯片模块，其中每个所述半导体管芯是MOSFET或IGBT之一。
5.根据权利要求1所述的多芯片模块，还包括模制外壳。
6.根据权利要求5所述的多芯片模块，其中所述导电元件通过所述模制外壳至少部分地露出，从而散去来自所述半导体管芯的热量。
7.根据权利要求1所述的多芯片模块，其中所述腹板部分包括两个自由端，所述连接器设置在所述腹板部分的一端。
8.根据权利要求1所述的多芯片模块，其中所述腹板部分包括两个自由端，所述连接器设置在所述两个自由端之间。
9.根据权利要求1所述的多芯片模块，其中所述元件是L形的。
10.根据权利要求1所述的多芯片模块，其中所述元件是T形的。
11.根据权利要求1所述的多芯片模块，还包括与所述衬底热接触的散热器。
12.根据权利要求1所述的多芯片模块，还包括与所述元件热连通的散热器。
13.根据权利要求1所述的多芯片模块，其中所述腹板部分包括从所述腹板部分的第二主表面伸出的多个脊。
14.根据权利要求1所述的多芯片模块，其中所述腹板部分包括在其每个相对端上的凹槽。
15.根据权利要求1所述的多芯片模块，其中所述腹板部分包括在其一端上的凹槽。
16.根据权利要求1所述的多芯片模块，其中所述连接器是球接触件。
17.根据权利要求1所述的多芯片模块，其中所述元件包括另一个球接触件，每个所述球接触件设置在所述腹板部分的各个端上。
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