CN104821282A - 功率半导体组件 - Google Patents

功率半导体组件 Download PDF

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Publication number
CN104821282A
CN104821282A CN201510051520.XA CN201510051520A CN104821282A CN 104821282 A CN104821282 A CN 104821282A CN 201510051520 A CN201510051520 A CN 201510051520A CN 104821282 A CN104821282 A CN 104821282A
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China
Prior art keywords
conductive component
electrode
power semiconductor
control electrode
splicing ear
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CN201510051520.XA
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English (en)
Inventor
元胁成久
宝藏寺裕之
守田俊章
绀野哲丰
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Hitachi Power Semiconductor Device Ltd
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Hitachi Power Semiconductor Device Ltd
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Publication of CN104821282A publication Critical patent/CN104821282A/zh
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Abstract

本发明提供功率半导体组件，其能够对晶体管元件的高发热部分进行高效冷却，布线接合部的连接可靠性优秀，其特征在于包括：散热板(1)；通过接合材料与散热板(1)连接的在绝缘基板(2)的正面形成有布线的电路基板；晶体管元件(5)，具有形成在一方的面的主电极(6)和控制电极(7)、和形成在另一方的面的背面电极，背面电极通过接合材料与电路基板连接；通过接合材料与主电极(6)接合的第一导电部件(10)；和使第一导电部件(10)和控制电极(7)与其他元件或电路基板电连接的导线或带状的连接端子(11、12)，控制电极(7)配置在主电极(6)的角部，第一导电部件(10)是将控制电极(7)之上的部分切掉的形状。

Description

功率半导体组件
技术领域
本发明涉及IGBT组件等功率半导体组件，特别涉及在半导体元件上配置的板状的导电部件之上用导线(wire)或条带(ribbon)形成布线的功率半导体组件。
背景技术
IGBT组件等功率半导体组件因为每个半导体元件处理数十～数百A的大电流，所以伴随半导体元件的较大发热。近年来，要求功率半导体元件进一步小型化，有发热密度越发上升的趋势。由Si或SiC构成的半导体元件通过由铜或铝等构成的导线、条带等与其他元件或电极连接，但因为半导体元件与布线材料的热膨胀率存在差异，所以在反复开关动作(通电的接通(ON)和断开(OFF)的动作)时，存在接合部因热疲劳而被破坏的问题。
于是，作为提高布线连接的可靠性的技术，专利文献1中公开了在半导体芯片上用焊料连接热扩散金属板，将热扩散金属板和绝缘基板上的布线图案用厚度100～200μm程度的较薄金属(条带)连接的结构的功率半导体组件。专利文献1中，记载：具有用热扩散金属板使中心部为高温的半导体芯片均热化的效果。同样，作为用导电性的金属板提高布线连接的可靠性的技术，有专利文献2。专利文献2中，介绍了从应力缓冲的观点考虑的解决方法：用2片热膨胀系数在布线部件与半导体元件的中间的金属板，消除热膨胀系数差较大的连接部。
即，用接合材料连接在半导体芯片上的热扩散金属板是如果使用适当的热膨胀系数的材料就能够使芯片的温度分布均匀化并且能够降低布线接合部的热应力的有力的连接可靠性提高手段。
现有技术文献
专利文献
专利文献1：日本特开2013-197560号公报
专利文献2：日本特开2012-28674号公报
发明内容
发明想要解决的技术问题
但是，现有结构的热扩散金属板，就沿着芯片面的平面方向的布局而言，并不是在热扩散和邦定(bonding)布局的方面得到优化的热扩散金属板。例如在IGBT元件(绝缘栅双极型晶体管)中，形成发射极电极(主电极)和栅极电极(控制电极)作为正面电极，形成集电极电极(主电极)作为背面电极。栅极电流仅在导通和截止的较短期间流过，瞬间流过的电流量也只有发射极-集电极之间流过的电流的数十分之一至数百分之一程度。因此，相对于发射极电极，栅极电极的发热量较小，必须要特别对发射极电极进行高效冷却。但是，专利文献1、2中记载的现有结构中，存在如下技术问题：其虽然记载了在发射极电极上连接的导电部件和栅极布线，但只是并列配置，并没有进行用于对高发热部分进行高效冷却的芯片上的详细布局的优化。
此外，形成源极电极(主电极)和栅极电极(控制电极)作为正面电极、形成漏极电极(主电极)作为背面电极的MOSFET元件(绝缘栅型场效应晶体管)也是流过主电极间的电流量比流过栅极电极的电流量更大，具有高发热部和低发热部，如何对高发热部分进行高效冷却，是晶体管元件的共同的技术问题。
本发明的目的在于提供一种能够对晶体管元件的高发热部分高效地进行冷却、布线接合部的连接可靠性优秀的功率半导体组件。
用于解决问题的技术方案
用于解决上述技术问题的本发明的一种结构，特征在于：“一种功率半导体组件，其特征在于，包括：散热板；通过接合材料与上述散热板连接的、在绝缘基板的正面形成有布线的电路基板；晶体管元件，具有形成在一方的面的主电极和控制电极以及形成在另一方的面的背面电极，上述背面电极通过接合材料与上述电路基板连接；与上述主电极通过接合材料接合的第一导电部件；和使上述第一导电部件和上述控制电极与其他元件或电路基板电连接的导线(wire)或带(ribbon)状的连接端子，上述控制电极配置在上述主电极的角部，上述第一导电部件是将上述控制电极之上的部分切掉的形状”。如果采用使控制电极配置在主电极的角部并且使第一导电部件与主电极连接、第一导电部件成为将控制电极之上的部分切掉的形状这样的结构，则能够使导电部件没有孔或槽地连续地以最大面积覆盖相对于控制电极作为高发热部分的主电极，在导电部件中传热路径不会被遮挡，可以得到较高的均热化效果。
发明效果
根据本发明，能够提供一种能够对晶体管元件的高发热部分进行高效冷却、布线接合部的连接可靠性优秀的功率半导体组件。
附图说明
图1是表示本发明的一个实施方式的功率半导体组件的结构的立体图。
图2是表示本发明的一个实施方式的功率半导体组件的结构的立体图。
图3是表示本发明的一个实施方式的功率半导体组件的结构的顶视图和截面图。
图4是表示使用现有的布线方法的功率半导体组件的结构的顶视图和截面图。
图5是表示本发明的一个实施方式的功率半导体组件的结构的顶视图。
图6是表示本发明的一个实施方式的功率半导体组件的结构的顶视图。
图7是表示本发明的一个实施方式的功率半导体组件的结构的顶视图。
图8是表示本发明的一个实施方式的功率半导体组件的结构的顶视图。
附图标记说明
1    散热板
2    绝缘基板
3    布线图案
4    接合材料
5    晶体管元件
6    主电极
7    控制电极
8    正面电极
9    接合材料
10   导电部件
11   连接端子
12   连接端子
21   接合材料
22   导电部件
23   连接端子
31   二极管元件
32   导电部件
33   主电极
34   导电部件
35   控制电极
36   连接端子
37   连接端子
41，42，43，44   连接端子
61   导电部件
62   连接端子
71   连接端子
具体实施方式
以下用附图说明实施例。
【实施例1】
图1示出了表示本发明的一个实施方式的功率半导体组件的结构的立体图。图1(a)表示层叠结构体，为了易于理解地示出晶体管元件的电极配置而在图1(b)中仅抽取描绘了晶体管元件。在图1(a)中，在由铜、AlSiC等构成的散热板1上通过焊料等接合材料(未图示)接合有电路基板。构成电路基板的绝缘基板2中，使用氮化铝、氮化硅、氧化铝等，在其正面通过硬钎焊等接合有由铝或铜等金属导体形成的布线图案3，在背面通过硬钎焊等接合有由铝或铜等金属导体形成的金属箔。
在布线图案3之上通过接合材料4接合有晶体管元件5。使用焊料或烧结性的银或铜的微粒浆料(paste)作为接合材料。也能够使用通过还原生成银或铜的氧化银或氧化铜的微粒浆料。根据接合材料的种类，为了提高接合材料的润湿性和确保接合强度，而对布线图案3实施镀银或镀镍。晶体管元件5使用Si或SiC作为材料，使用IGBT(Insulated Gate Bipolar Transistor：绝缘栅双极型晶体管)或MOSFET(Metal Oxide Semiconductor Field-Effect Transistor：金属氧化物半导体场效应晶体管)作为元件的种类。此处，在晶体管元件5的正面如图1(b)所示地形成有主电极6和控制电极7。在背面虽然未图示，但形成有另一个主电极。
IGBT元件中，形成发射极电极(主电极)和栅极电极(控制电极)作为正面电极，形成集电极电极(主电极)作为背面电极。MOSFET元件中，形成源极电极(主电极)和栅极电极(控制电极)作为正面电极，形成漏极电极(主电极)作为背面电极。例如，为了将IGBT元件用作逆变器装置，而构成为将多个IGBT元件和二极管元件组合得到的组件，但图1中为了简化而没有图示二极管元件。
此处，在主电极6之上通过接合材料9连接有导电部件10。在导电部件10之上使用超声波接合机连接有由铝或铜或两者的包层(clad)材料构成的连接端子11，与电路基板上的布线图案3或其他半导体元件等连接。本发明的实施方式中，在主电极6的角部配置有控制电极7。此外，导电部件10是如下结构：为了以最大面积覆盖晶体管元件的正面电极侧的主电极6而在护圈(guard ring)的内侧以最大限度进行设计，不过仅在控制电极7之上的部分设置有切口。在控制电极7之上使用超声波接合机连接有由铝或铜或两者的包层材料构成的连接端子12，与电路基板上的布线图案3连接。
主电极6和控制电极7为了与导电部件10接合和与连接端子12超声波接合，而被铝、镍、金、银、铜等的数μm厚的薄膜覆盖。与接合材料4的材料同样地使用焊料或烧结性的银或铜的微粒浆料等作为接合材料9的材料。
导电部件10如果使用热导率在与晶体管元件的电极面水平的方向上比垂直方向更高的材料，则元件的发热在传导至上部的导线或条带等布线之前，热在沿着导电部件10的芯片面的面内扩散，可以得到良好的均热效果，所以不会发生仅有芯片的特定部分成为高温而使导线或条带剥离的情况，芯片整体的布线连接可靠性提高。例如，能够使用具有在某个面上是20W/mK、在其正交方向上是2000W/mK这样的导热各向异性的石墨纤维与金属(铜、铝等)复合化后的材料。此外，进而优选使用使铜/因瓦合金/铜的包层材料等、将具有不同的热导率的层叠得到的材料。这是因为，第一，因瓦合金(铁镍合金)的热导率是13W/mK，小于铜的400W/mK，所以难以使晶体管元件的发热传导到上部，热沿着元件面在铜内部传播而均热化。第二，通过铜(约16ppm/K)与因瓦合金(约1ppm/K)的比率能够将热膨胀率调整为Si或SiC(3～5ppm/K)与布线材料(Al约23ppm/K，Cu约16ppm/K)中间的优选值，能够降低热应力。例如，通过使铜/因瓦合金/铜的比为1：1：1，可以得到约11ppm/K的热膨胀率，不需要制作热膨胀差异大的材料的连接部，还能够提高布线连接可靠性和导电部件与芯片的连接可靠性。
功率半导体组件中，因为在主电极中流过大电流所以使用200～500μm直径的导线或100～300μm厚的条带(Ribbon)，但特别优选使用铜/因瓦合金/铜共1mm以上厚度的导线或条带，以免布线与铜/因瓦合金/铜的包层材料的连接部的应力变形与铜/因瓦合金/铜的包层材料与晶体管元件的连接部的应力变形重合。为了缓和导线或条带在切割时对芯片的冲击也优选使用1mm以上厚度的导线或条带。作为导电部件10的材料，另外也能够使用铜/钼/铜的包层材料等。图1的例子中，在主电极上的导电部件之上连接有条带。也可以使用导线，但因为存在导电部件10所以难以受到超声波接合和切断的冲击引起的芯片损伤，能够用1mm以上宽度的铜条带连接。另一方面，控制电极没有导电部件，与电极直接邦定(bond)，所以适用铝线、铜/铝包层条带、窄铜线等能够低负载低功率接合的布线材料。
接着，对控制电极7位于主电极6的角部、导电部件10是将控制电极7之上的部分切掉的结构的效果。在MOSFET元件中，存在用氧化膜(SiO2)绝缘的栅极电极，具有电容成分。这称为栅极-源极间电容、栅极-漏极间电容。而且，通过栅极电压进行通断(导通和截止)，在通断时流过栅极电流。该电流用于对栅极-源极间电容、栅极-漏极间电容进行充放电且较小，只有源极-漏极间流过的电流量的数十分之一。IGBT元件也在结构上包含有MOSFET，栅极电流只瞬间地流过，电流量较小。像这样，因为流过控制电极(栅极电极)的电流与主电极(发射极电极-集电极电极或源极电极-漏极电极)相比较小且仅在短时间流过，所以控制电极是低发热部，主电极是高发热部。实际上，多数情况下，主电极6在面积上占据正面电极8的大部分，在主电极6的内部也取决于驱动温度地发生20～30℃的温度差。导电部件10对于均热化是有效的，不过在将控制电极7配置在角部、用导电部件10连续地覆盖主电极6的情况下可以得到较高的均热效果。反之，将控制电极配置在芯片中央时传热路径会中断，所以不予以优选。
此外，如图1所示在主电极上连接导电部件，在控制电极上没有连接导电部件的情况下，还具有以下优点。即，导电部件仅用于主电极6时，在控制电极7的导线或条带接线中，导电部件10可能会成为超声波接合的立体障碍。在传递超声波振动的工具中在前后隔开间隔地安装有导线(条带)供给用的被称作引导器(guide)的部件和导线(条带)切断用的被称作切断器(cutter)的部件，顶端部较细，上部较粗。采取一般的超声波接合机的例子时，在导电部件10是1mm厚时，为了在超声波接合时不发生碰撞而必须以工具中心为起点设置引导器侧2mm、切断器侧1mm程度的空隙(clearance)。控制电极7位于芯片中心时，需要最少3mm宽度的孔。当也考虑到在导线(条带)的环(loop)方向使孔扩大时，不得不大幅减小导电部件10的面积，在均热化的方面不利。像这样将控制电极7配置在主电极6的中心附近时，在控制电极的前后左右任意方向上都需要空出距离，结果导电部件的面积减小，具有不能得到充分的热扩散效果的技术问题。与此不同，通过如本实施例所示将控制电极7设置在主电极6的角部，能够使导电部件10导致的立体干涉成为最小限度。结果，不需要使导电部件10的大小大幅减小，所以不会损害均热化效果。
根据本实施例，能够采用考虑了晶体管元件的主电极与控制电极的发热量存在差异的、使电极和与电极接合的导电部件最适于芯片均热化的结构，能够提供高温动作(工作)时的布线连接可靠性高的功率半导体组件。
【实施例2】
本实施例中，用图2说明在控制电极7上也设置有导电部件的功率半导体组件的例子。图2中，对与标注已说明的图1所示的相同的附图标记的结构具有相同功能的部分，省略说明。
本结构中，在控制电极7上通过接合材料21接合有导电部件22。接合材料21与接合材料9同样使用焊料或烧结性的银或铜的微粒浆料。导电部件22与导电部件10同样，如果使用在与晶体管元件的电极面水平的方向上与垂直方向相比热导率更高的材料，则在元件的发热传导至上部的导线或条带等布线之前，热在沿着导电部件的芯片面的面内扩散，可以得到良好的均热效果，所以不会发生仅有芯片的特定部分成为高温而使导线或条带剥离的情况，芯片整体的布线连接可靠性提高。特别优选使用铜/因瓦合金/铜的包层材料等将具有不同的热导率的层层叠得到的材料。在导电部件22，用超声波接合机连接由铝或铜或两者的包层材料构成的连接端子23，与电路基板上的布线图案或其他半导体元件等连接。因为存在导电部件22，所以难以受到超声波接合和切断的冲击引起的芯片损伤，能够用1mm以上宽度的铜条带连接。
本结构中，控制电极7位于主电极6的角部，用没有遮挡传热路径的孔或槽的导电部件10覆盖主电极6，所以可以得到较高的均热效果。此外，在将连接端子23超声波接合到控制电极7上的导电部件22时，如图1的结构所示导电部件10不会成为障碍，所以不需要缩小导电部件10而与连接端子23的接合部分保持距离，所以可以得到导电部件10的较高的均热化效果。
【实施例3】
本实施例中，对分别搭载有多个晶体管元件和二极管元件的、组件整体均热性优秀的功率半导体组件的例子进行说明。
功率器件通常将多个晶体管和二极管组件化(模块化)而使用，实现小型化和安装性的提高等。用导线等连接端子使电路基板的布线图案与元件、或者元件之间连接时，在芯片上切断导线意味着用超声波接合机的切断器对芯片造成冲击，所以大多情况下要避免。因此，电路基板的布线图案与晶体管、晶体管与二极管、二极管与电路基板的布线图案通常用0.4至0.5mm直径的铝线使用楔形邦定型(wedgebond type)的超声波接合机连续地接线(连接)。
另一方面，在功率半导体组件的大容量化、高发热密度化的发展中，作为导线材料，铜受到了关注。铜具有比铝更高的热导率、电导率，且热膨胀率接近Si和SiC所以在应力上也有利。像这样，铜或铜与铝的包层等的含铜的导线或条带，导热性优秀，是能够使组件整体的温度分布均匀化、同时能够降低布线接合部的热应力的有利的连接可靠性提高手段。但是，因为比铝更硬，所以在超声波接合时难以断裂，必须施加高负载、高功率，容易造成芯片损伤。此外，如现有那样使电路基板的布线图案与晶体管、晶体管与二极管、二极管与电路基板的布线图案连续地连接的情况下，因为铜较硬，难以在芯片面方向上弯曲，所以不得不采用直线连接，铜布线数和布线方向受到限制。
与此不同，如果如实施例1、2所示在晶体管和二极管的电极上设置导电部件，则会起到超声波接合时的冲击缓冲材料的作用，所以能够使用含铜的导线或条带进行芯片面上的连接和切断，能够采用组件整体的均热性优秀的布线方法。以下用附图具体进行说明。
图3(a)是本实施例的功率半导体组件的顶视图，图3(b)示出A-A所示的点划线部分的截面图。此外，为了比较，图4(a)示出使用现有的布线方法的功率半导体组件的顶视图，图4(b)示出A-A所示的点划线部分的截面图。图3、4中，对与标注已说明的图1、2所示的相同的附图标记的结构具有相同功能的部分省略说明。
图3(a)中，在绝缘基板2，形成有划分为4个区块(block)且相互绝缘的布线图案3(3A、3B、3C、3D)。在图3(b)中，在布线图案3上使用由烧结性的铜的微粒浆料构成的接合材料4(在顶视图中未图示)，接合有二极管元件31和晶体管元件5。也可以使用焊料或银的微粒浆料等接合材料。在图3(a)中，各4个二极管元件31和晶体管元件5以横向一列排列的方式搭载。在图3(b)中，使用由烧结性的铜的微粒浆料构成的接合材料9(在顶视图中未图示)在二极管元件31的正面电极接合导电部件32、在晶体管元件5的正面电极侧主电极33接合导电部件34。导电部件32、34优选使用在与晶体管元件的电极面水平的方向上比垂直方向热导率更高的材料，特别优选使用将具有不同热导率的层层叠得到的材料。本实施例中，使用铜/因瓦合金/铜的厚度比率为1：1：1、总厚度为1mm的材料。通过使用相同的烧结性的铜微粒浆料作为接合材料4和接合材料9而进行二极管元件31与导电部件32、晶体管部件5与导电部件34的同时接合。在铜微粒的烧结中如果不与加热同时进行加压，则烧结密度不会提高。进行同时接合的情况下，如果导电部件的面积比元件小，则导电部件下的面压比元件下的面压高，在导电部件端部容易发生使元件破裂的情况，所以对导电部件32、34的元件侧的面实施倒角。如图3(a)、(b)所示，布线图案3A与导电部件32之间、导电部件32与导电部件34之间、导电部件34与布线图案3C之间使用超声波接合机，用分别独立的由铜条带构成的连接端子36相互连接。晶体管元件5的控制电极35与布线图案3D之间使用超声波接合机，用由铝线(aluminium wire)构成的连接端子37连接。因为连接端子37与芯片面不隔着导电部件超声波接合，所以接合时的冲击容易对芯片造成损伤，所以使用能够在与铜相比更低负载更低功率下变形的铝线。此外，绝缘基板2与散热板接合，与外部端子一同收纳在树脂壳体中，用硅凝胶(silicone gel)等密封，但由于附图会变得复杂所以没有图示。
图4的现有例中，从绝缘基板2到导电部件32、34的层叠结构与图3的本实施例相同，但布线方法不同。如图4(a)所示，布线图案3A、导电部件32、导电部件34、布线图案3C用由中途未被切断的连续线构成的连接端子41、42、43、44连接。图4(b)示出了包括连接端子42A的截面图。在导电部件32、34之上，条带形成了被称为针脚邦定(stitch bond)的较小的弧，没有在导电部件32、34之上被切断。像这样使用连续线的接线方法，在未搭载导电部件而是与芯片电极面直接进行导线邦定的情况下，在芯片面上进行导线切断时芯片中会出现裂纹，所以切断在电路基板上进行且广泛使用。在芯片上搭载有导电部件的情况下，会起到超声波接合时的冲击缓冲材料的作用，所以能够用含铜的导线或条带连接，但会发生新的问题。因为铜较硬，所以难以在中途改变角度地弯曲打线。例如，在图4(a)中，连接端子42用3根条带使布线图案3A与二极管元件32连接，但因为布线图案3A的电极宽度的制约，连接端子41仅有41B这1根能够使布线图案3A与二极管元件32连接。或者，也能够如连接端子44那样相对于芯片具有角度地进行条带邦定，但仅有44A、44B这2根能够使布线图案3A与二极管元件32连接。这样的条带数量的降低除了会导致电流集中之外，还会妨碍通过条带的导热进行的组件的均热化，所以不予以优选。本实施例解决了这样的技术问题，如图3(a)的连接端子36所示，使布线图案3A与导电部件32之间、导电部件32与导电部件34之间、导电部件34与布线图案3C之间分别用完全独立的用连接端子连接。因此，能够进行在布线图案3A与导电部件32之间相对于芯片具有30度的角度地接合铜条带、导电部件32与导电部件34之间沿着芯片(在0度的方向)打铜条带的接线。这能够使在连续线中仅有1、2根能够连接的布线图案3A与导电部件32之间用3根连接，能够实现组件的均热化、芯片配置的自由化。在二极管元件与晶体管元件大小不同，或者二极管元件与晶体管元件的搭载数量不同的情况下，用大致直线状的含铜的导线或条带接线在布局上非常困难，所以本发明的用独立的多个含铜的导线或条带进行的接线特别有效。此外，不在导线部件32和34上进行针脚邦定，会减少传热路径，但容易使导电部件增厚导线或条带的厚度的量，不会成为阻碍导热的主因。
像这样，根据本发明，能够使电路基板与导电部件之间、导电部件与其他导电部件之间分别用独立的含铜的导线或带状的连接端子连接。通过该独立的接线，能够在与电路基板和晶体管元件之间的铜类导线(条带)方向大不同的方向上，打晶体管与二极管之间的铜类导线(条带)，即使电极图案和芯片位置偏离，也不需要减少铜类导线(条带)的根数。这对组件整体的均热化有较大贡献。
【实施例4】
图5示出本发明的另一个其他实施方式的功率半导体组件的顶视图。使用的部件与图3所示的实施例3相同所以省略说明。在晶体管元件5的正面，形成有主电极33和控制电极35，控制电极35配置在主电极33的角部。然后，在主电极33通过接合材料(未图示)连接有导电部件34，是将控制电极35之上的部分切掉的形状。因此，作为晶体管元件5的高发热部的主电极33被没有妨碍导热的孔或槽的导电部件34整体覆盖，晶体管元件5的面方向的均热性提高，与导电部件34连接的由铜条带构成的连接端子36的连接可靠性提高。此外，在由铝线构成的连接端子37的超声波接合中，因为控制电极位于角部，所以导电部件34难以与引导器和切断器碰撞，不需要缩小导电部件34，所以可以得到导电部件34所带来的较高的均热效果。除了以上晶体管元件单体的均热化效果之外，本实施例的组件还用相互独立的铜条带使布线图案3或导电部件32、34连接，与使用连续的直线状的铜条带的情况相比可以更紧密地打条带，所以作为组件整体也可以得到均热化效果，连接端子的连接可靠性提高。
【实施例5】
图6示出本发明的另一个其他实施方式的功率半导体组件的顶视图。除控制电极及其电连接部以外，都与图5所示的实施例4使用的部件相同，所以省略说明。在晶体管元件5的正面，形成有主电极33和控制电极35，控制电极35配置在主电极33的角部。然后，在主电极33通过接合材料(未图示)连接有导电部件34，在控制电极35通过接合材料(未图示)连接有导电部件61。导电部件34和导电部件61作为相同材料使用在与晶体管元件的电极面水平的方向上比垂直方向热导率更高的材料即可，特别优选使用铜/因瓦合金/铜的包层材料等将具有不同热导率的层层叠得到的材料。本实施方式中使用铜/因瓦合金/铜的厚度比率为1：1：1、总厚度为1mm的材料，但控制电极比主电极小，在导电部件61与控制电极35的接合部发生的热应力较小，所以也能够不使用热膨胀率接近Si、SiC的铜/因瓦合金/铜的包层材料，而是改为使用纯铜作为导电部件61。导电部件61起到将连接端子62超声波接合时的缓冲材料的作用，所以连接端子62能够使用与铝相比能以更高负载更高功率接合的铜条带。通过使连接端子36和连接端子62成为在材质上和形状上都相同的铜条带，能够缩短超声波连接工序的时间。
本结构中，控制电极位于主电极的角部，用没有遮挡传热路径的孔或槽的导电部件覆盖主电极，所以可以得到较高的均热效果。此外，在将连接端子62超声波接合时，导电部件34不会成为障碍，所以不需要减小导电部件34而与连接端子62的接合部分保持距离，所以可以得到导电部件34所带来的较高的均热化效果。进而，本实施例的组件用相互独立的铜条带使布线图案3或导电部件32、34连接，能够与使用连续的直线状铜条带的情况相比更密地打条带，所以作为组件整体也可以得到均热化效果，连接端子的连接可靠性提高。
【实施例6】
图7示出本发明的另一个其他实施方式的功率半导体组件的顶视图。与图3所示的实施例3使用的部件相同的较多，对于这一点省略说明。与实施例3的不同点在于，用连接端子71使与各晶体管元件的主电极33接合的导电部件34彼此连接这一点。导电部件34起到将连接端子71超声波接合时的缓冲材料的作用，所以连接端子71使用与铝相比能以更高负载更高功率接合的铜条带。也能够使用铜线(copperwire)或铜与铝的包层线(clad wire)。此外，用铝线(aluminium wire)等的连接端子使晶体管元件彼此连接、使电位相同的技术是公知的，但如图4的连接端子44所示的在芯片上进行针脚邦定的连接线的端子，必然会覆盖芯片面，难以确保连接与其正交的方向的导线或条带的面积。本实施例中，连接端子在导电部件32和34之上切断，所以导电部件上的空间存在余量，能够进行以导电部件为起点向不同方向的导线、条带邦定，能够进行导电部件34彼此的连接。
这样，使电路基板与导电部件之间、导电部件与其他导电部件之间分别用独立的连接端子接线，消除晶体管元件上的导电部件之上的针脚邦定，由此能够用导热性优秀的含铜材料使晶体管元件之间连接，传热路径纵横扩展，由此对组件整体的均热化有较大贡献。
【实施例7】
图8示出本发明的另一个其他实施方式的功率半导体组件的顶视图。与图7所示的实施例6使用的部件相同，所以省略说明。在晶体管元件5的正面，形成有主电极33和控制电极35，控制电极35配置在主电极33的角部。然后，在主电极33通过接合材料(未图示)连接有导电部件34，是控制电极35之上的部分被切掉的形状。由此，作为晶体管元件5的高发热部的主电极33被没有妨碍传热的孔或槽的导电部件34整体覆盖，晶体管5的面方向的均热性提高，连接端子36的连接可靠性提高。此外，在连接端子37的超声波接合中，因为控制电极位于角部，所以导电部件34难以与引导器和切断器碰撞，不需要缩小导电部件34，所以可以得到导电部件34所带来的较高的均热效果。除了以上晶体管元件单体的均热化效果之外，本发明的组件用相互独立的铜条带使布线图案3与导电部件32、34连接，与使用连续的直线状铜条带的情况相比可以更密地打条带。此外，因为确保了与用连接端子71使二极管元件31与晶体管元件5连接的方向不同的方向的传热路径，所以能够进一步实现组件整体的均热化，高温工作时的导线或条带的连接可靠性提高。
对于本发明的实施方式用实施例进行了具体说明，但本发明不限定于这些实施例的结构，能够在不脱离发明的主旨的范围内进行各种变更。

Claims (12)

1.一种功率半导体组件，其特征在于，包括：
散热板；
通过接合材料与所述散热板连接的、在绝缘基板的正面形成有布线的电路基板；
晶体管元件，具有形成在一方的面的主电极和控制电极，和形成在另一方的面的背面电极，所述背面电极通过接合材料与所述电路基板连接；
通过接合材料与所述主电极接合的第一导电部件；和
使所述第一导电部件和所述控制电极与其他元件或电路基板电连接的导线或带状的连接端子，
所述控制电极配置在所述主电极的角部，所述第一导电部件是将所述控制电极之上的部分切掉的形状。
2.如权利要求1所述的功率半导体组件，其特征在于：
所述第一导电部件在与晶体管元件的电极面水平的方向上的热导率比垂直方向上的热导率高。
3.如权利要求2所述的功率半导体组件，其特征在于：
所述第一导电部件是将具有不同热导率的多个层层叠而形成的。
4.如权利要求1所述的功率半导体组件，其特征在于：
所述控制电极直接与所述连接端子连接。
5.如权利要求1所述的功率半导体组件，其特征在于：
具有通过接合材料与所述控制电极连接的第二导电部件；
所述控制电极与所述连接端子通过所述第二导电部件电连接。
6.如权利要求5所述的功率半导体组件，其特征在于：
所述第二导电部件在与晶体管元件的电极面水平的方向上的热导率比垂直方向上的热导率高。
7.如权利要求5所述的功率半导体组件，其特征在于：
所述第二导电部件是将具有不同热导率的多个层层叠而形成的。
8.如权利要求1所述的功率半导体组件，其特征在于，包括：
通过接合材料与所述电路基板连接的二极管元件；和
通过接合材料与所述二极管元件的正面电极连接的第三导电部件，
将所述电路基板与所述第一导电部件或第三导电部件连接的第一连接端子、和将所述第一导电部件与第三导电部件连接的第二连接端子，分别是独立的含铜的导线或带状的连接端子。
9.如权利要求8所述的功率半导体组件，其特征在于：
设置有使所述第一导电部件彼此连接的含铜的导线或带状的第三连接端子。
10.一种功率半导体组件，其特征在于，包括：
散热板；
通过接合材料与所述散热板连接的、在绝缘基板的正面形成有布线的电路基板；
晶体管元件，具有形成在一方的面的主电极和控制电极，和形成在另一方的面的背面电极，所述背面电极与所述电路基板通过接合材料连接；
通过接合材料与所述主电极接合的第一导电部件；
通过接合材料与所述电路基板连接的二极管元件；
通过接合材料与所述二极管元件的正面电极连接的第三导电部件；和
使所述第一导电部件、所述第三导电部件和所述控制电极与其他元件或电路基板电连接的导线或带状的连接端子，
使所述电路基板与所述第一导电部件或第三导电部件连接的第一连接端子、和使所述第一导电部件与第三导电部件连接的第二连接端子，分别是独立的含铜的导线或带状的连接端子。
11.如权利要求10所述的功率半导体组件，其特征在于：
设置有使所述第一导电部件彼此连接的含铜的导线或带状的第三连接端子。
12.如权利要求10或11所述的功率半导体组件，其特征在于：
具有通过接合材料与所述控制电极连接的第二导电部件；
所述控制电极与所述连接端子通过所述第二导电部件电连接。
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