CN105706233A - 半导体模块 - Google Patents
半导体模块 Download PDFInfo
- Publication number
- CN105706233A CN105706233A CN201380080721.1A CN201380080721A CN105706233A CN 105706233 A CN105706233 A CN 105706233A CN 201380080721 A CN201380080721 A CN 201380080721A CN 105706233 A CN105706233 A CN 105706233A
- Authority
- CN
- China
- Prior art keywords
- connecting portion
- semiconductor module
- terminal
- shared connecting
- molded section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49537—Plurality of lead frames mounted in one device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
- H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04034—Bonding areas specifically adapted for strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/3701—Shape
- H01L2224/37012—Cross-sectional shape
- H01L2224/37013—Cross-sectional shape being non uniform along the connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/3716—Iron [Fe] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Abstract
将与各电路中的同电位的终端相连接的共用连接部(26)配置于模塑部的外部,从而能使半导体模块(1)实现小型化。共用连接部(26)是在现有的半导体模块中配置于模塑部内部的引线框(25)的一部分,因此,模塑部比以往要小型化,能力图减少模塑树脂的量并降低材料成本。
Description
技术领域
本发明涉及在引线框上搭载有多个半导体元件的半导体模块。
背景技术
以往,已知有在引线框上搭载有包含开关元件等半导体元件的多个电子元器件并用模塑树脂将这些电子元器件进行密封的半导体模块。引线框通过对一块金属板材进行冲压加工、蚀刻加工或切割加工来进行制造。
因此,遍布有引线框的各部位、即搭载半导体芯片的支承面或用于与外部元器件相连接的端子而互不重合。另外,在将模塑部进行成型后,切除引线框的外周部的不需要部分。
在这样的半导体模块中,要求有效利用引线框并使模块尺寸小型化,为此进行了研究。例如,在专利文献1所提示的半导体模块中,将多个端子进行一体化来削减端子的数量,从而力图实现装置的小型化。
另外,在该专利文献1中,通过功率布线基板来将逆变器输入端子彼此相连接,或将逆变器接地端子彼此相连接。若像这样在半导体模块的外部进行端子彼此的连接,则无需将用于将端子彼此相连接的布线内置于半导体模块中,能使模块实现小型化。
另外,在专利文献2中,提示了如下功率模块:适当地对作为引线框的被切除部分的导承框进行配置,从而将其一部分用作为布线部而不进行切除。由此,引线框的材料生产率得以提高,进而各引线框的变形受到抑制。
现有技术文献
专利文献
专利文献1:日本专利特开2011-250491号公报
专利文献2:日本专利特开2013-12525号公报
发明内容
发明所要解决的技术问题
然而,在专利文献1所提示的半导体模块中,将多个端子进行一体化而削减了端子的数量,但仍存在多个同电位电平的端子,可以认为存在进一步小型化的余地。另外,为了用功率基板将从半导体模块延伸出的端子彼此相连接,必须使这些端子延伸至功率基板为止。
功率基板通常用于多个端子间的连接,或与其它半导体模块进行共用。因此,与功率基板相连接的端子必须形成得较长,结果会导致引线框大型化或废弃部分增加。
另外,在专利文献2中,对以往被切除的导承框的一部分进行有效利用,削减了废弃部分,但并不能使半导体模块实现小型化。相反,由于将有效利用导承框后的布线部收纳于模块部的内部,因此,有可能会造成模块部的大型化。
本发明是为了解决如上所述的问题而完成后的,其目的在于,提供一种半导体模块,该半导体模块能力图实现引线框的有效利用,并能使模块尺寸小型化。
解决技术问题所采用的技术方案
本发明所涉及的半导体模块包括:引线框,该引线框具有电气独立的多个支承面;多个电子元器件,该多个电子元器件包含搭载于支承面上的多个半导体元件;以及模塑部,该模塑部利用模塑树脂来将引线框和电子元器件进行一体化,利用多个电子元器件来构成多个电路,利用向模塑部的外部延伸的引线框的一部分来构成连接各电路与外部元器件的多个端子,在所述半导体模块中,具有共用连接部,该共用连接部在模塑部的外部将各电路中的同电位的端子的至少一组进行连接,共用连接部是各线路的电源线、或接地线或其它布线的共用布线,并且是该共用布线的端子。
发明效果
本发明所涉及的半导体模块包括在模塑部的外部将各电路中的同电位的端子进行连接的共用连接部,从而能力图实现引线框的有效利用,并能使模块尺寸小型化。
关于本发明的除上述以外的目的、特征、观点及效果,通过参照附图并如下述对本发明进行详细说明来做进一步的揭示。
附图说明
图1是使用了本发明的实施方式1所涉及的半导体模块的助力转向装置的整体电路图。
图2是表示本发明的实施方式1所涉及的半导体模块的半成品的俯视透视图。
图3是表示本发明的实施方式2所涉及的半导体模块的半成品的俯视透视图。
图4是表示本发明的实施方式3所涉及的半导体模块的半成品的俯视透视图。
图5是表示本发明的实施方式3所涉及的半导体模块的立体图。
图6是使用了本发明的实施方式4所涉及的半导体模块的助力转向装置的整体电路图。
图7是表示本发明的实施方式4所涉及的半导体模块的半成品的俯视透视图。
图8是表示本发明的实施方式5所涉及的半导体模块的立体图。
图9是表示作为比较例的现有的半导体模块的立体图。
具体实施方式
实施方式1.
下面,基于附图说明本发明的实施方式1所涉及的半导体模块。图1是使用了本实施方式1所涉及的半导体模块的助力转向装置的整体电路图,图2是对本实施方式1所涉及的半导体模块的半成品进行透视而得的俯视图。此外,在图2中,对与图1相同或相当的部分标注相同的标号。
如图1所示,助力转向装置由作为三相永磁体电动机的电动机100和控制单元200构成,将两者进行一体化。控制单元200包括:向电动机绕组提供电力的逆变器电路2;向逆变器电路2提供电源的电源部;以及包含CPU31及其周边电路的控制基板3。逆变器电路2作为本实施方式1所涉及的半导体模块1由单个元器件构成。
利用图1对助力转向装置的控制单元200进行说明。电源部由连接或切断电源线的继电器4、用于抑制噪音的线圈5、以及电容器6、7构成。电源部的电力由作为蓄电装置的电池8所提供。
逆变器电路2与电动机100的三相(U相、V相、W相)的绕组相对应地分别具备3组共6个的上桥臂的开关元件21和下桥臂的开关元件22。此外,各相分别配置有起到连接、切断向电动机100的供电的继电器的作用的开关元件23。
从车速传感器9和转矩传感器10向控制基板3的CPU31输入信号,另外,从旋转传感器11经由旋转传感器接口33向控制基板3的CPU31输入信号。此外,从电流监视器(省略图示)经由电流监视器接口34输入信号。
另外,CPU31对操作辅助量(handleassistamount)进行运算,并将其经由预驱动器32输出至逆变器电路2。逆变器电路2的各开关元件的端子即终端经由预驱动器32与CPU31相连接,利用CPU31来对各开关元件进行控制。在图1中,Gh、Gl、Gm分别表示开关元件21u、22u、23w的控制信号用终端。
上下桥臂的开关元件21、22间具有3个电压监视器用终端Mm。另外,在电流检测用的分流电阻24的上游具有监视器用终端Sh。这些终端例如经由电流监视器接口34与CPU31相连接。另外,与各相绕组相对应的监视器输出用终端Mu、Mv、Mw与电动机100相连接。
接着,利用图2对本实施方式1所涉及的半导体模块1的结构进行说明。由含铜或铁的合金材料构成的引线框25具有电气独立的多个支承面(以下称为芯片安装面)。在芯片安装面上,隔着导电性接合材料而搭载有多个半导体元件和其它电子元器件。例如,在图2中,在芯片安装面25a上搭载有开关元件21w。
作为搭载于芯片安装面上的开关元件21、22、23,例如使用FET(FieldEffectTransistor:场效应晶体管)。此外,在图2中,引线框25具有多个芯片安装面和终端,另外,虽然存在多个电子元器件,但为了避免复杂化,仅对一部分标注了标号。
引线框25通过对1块金属板材进行冲压加工、蚀刻加工或切割加工来进行制造,各个部位遍布引线框25而互不重合。此外,冲压加工具有量产性较高的优点,蚀刻加工具有交货期较短的优点,切割加工具有低成本的优点。
以在引线框25上方桥接的方式进行配置的横梁28a、28b、28c(总称为横梁28)由铜或铁类材料构成,连接在半导体元件间、引线框间、或半导体元件与引线框间。
另外,在图2中,与外部元器件相连接的终端(Mv、Mu、Mw、Mm、Gh、Gm、Gl)向下方延伸。这些终端通过焊线27与引线框25或半导体元件相连接。
这些引线框25、开关元件21、22、23和其它电子元器件、焊线27和横梁28被由环氧类树脂构成的模塑树脂所密封而形成为一体。在图2中,虚线A表示本实施方式1中的半导体模块1的模塑部的区域。
在虚线A所示区域中将模塑部进行成型后,对图2中斜线所示的不需要的引线框25c进行切割,从而完成半导体模块1。此外,除了用由环氧类树脂构成的模塑树脂来覆盖各部位的方法以外,还有用硅树脂来对由模塑树脂所形成的外框中进行填充的方法,可以采用两种方法中的任意一种方法。
这样,半导体模块1将由多个半导体元件和其它电子元器件构成的多个电路内置于模塑部中。另外,引线框25的一部分向模塑部的外部进行延伸,从而构成连接各电路与外部元器件的多个终端。
此外,半导体模块1具有共用连接部26,该共用连接部26在模塑部的外部连接这些多个终端中的、各电路中的同电位的终端的至少一组。共用连接部26是各线路的电源线、接地线或其它布线的共用布线,并且是该共用布线的终端。此外,为了进一步增大共用连接部26的效果,优选为用共用连接部26来连接各电路中的同电位的所有终端。
在图1所示的逆变器电路2中,对于将哪个终端与共用连接部26相连接,考虑了各种结构。在本实施方式1中,选择位于分流电阻24上游的、下桥臂的开关元件22u、22v、22w的源极的终端。
如图2所示,共用连接部26由外框的引线框25b构成,利用上述加工方法作为引线框25的一部分来进行制造。在图2中,如虚线A所示的那样,模塑部在俯视下成型为矩形,共用连接部26沿模塑部的一条边进行配置。当模塑部在俯视下成型为长方形时,优选为沿模塑部的长边来配置共用连接部26。
另外,在本实施方式1中,共用连接部26从不同于其它终端(Mv、Mu、Mw、Mm、Gh、Gm、Gl)的边延伸出来,但也可以从相同的边延伸出来。另外,共用连接部26也能向与芯片安装面的搭载有半导体元件的面正交的方向弯曲。在这种情况下,只要适当决定是向搭载有半导体元件的面的一侧弯曲还是向搭载有半导体元件的面的相反侧弯曲即可。
关于本实施方式1中的共用连接部26,列举w相系统的开关元件21w、22w、23w为例来进行说明。如图2所示,电源线从电源终端Vd经由横梁28b、芯片安装面25a与开关元件21w的漏极相连接。
开关元件21w的栅极通过焊线与终端Gh相连接,源极通过横梁28a与开关元件22w的漏极相连接。开关元件22w的源极经由横梁28c与外框的引线框25b即共用连接部26相连接。另外,接地终端Gnd也经由分流电阻24和横梁与共用连接部26相连接。
像这样,分流电阻24上游的电路部从与各电动机相绕组相对应的逆变器电路向模塑部外延伸,通过由引线框25b构成的共用连接部26来进行一体化。另外,与分流电阻24下游的布线相连接的终端呈梳状地延伸至模塑部的外部。
作为本实施方式1的比较例,在图2中,用单点划线B来表示现有的半导体模块的模塑部的区域。现有的半导体模块除了用虚线A来表示的区域以外,到单点划线B所示的区域为止,即图2中向下方延伸的终端以外的整个部位都被模塑部所覆盖。
如上所述,根据本实施方式1,将连接各电路中的同电位的终端的共用连接部26配置于模塑部的外部,从而能使半导体模块1实现小型化。共用连接部26是在现有的半导体模块中配置于模塑部内部的引线框25的一部分,因此,模塑部比以往要小型化,能力图减少模塑树脂的量并降低材料成本。
此外,共用连接部26能利用与以往相同的引线框25的加工方法来形成,因此,不会导致制造成本的上升或操作工序的复杂化,能力图实现引线框25的金属材料的有效利用。
另外,用外框的引线框25b的一部分来构成共用连接部26,从而能在将半导体元件搭载于引线框25并连接横梁28、焊线27后,在模块成形时对工件进行定位,或用作为移动的保持部。此外,由于共用连接部26兼作为终端,因此,能将共用连接部26用作为完成半导体模块1并将其安装于装置时的电气性和机械性连接部。
另外,当模塑部在俯视下成型为长方形时,沿模塑部的长边方向配置共用连接部26,从而能起到提高半导体模块1的刚性并抑制翘曲的效果。此外,共用连接部26从不同于其它终端的边延伸出来,因此,在将其它终端与外部元器件相连接时不会造成妨碍。
此外,在本实施方式1中,将接地线与共用连接部26相连接并将其配置于模塑部的外部,因此,在共用连接部26因事故等而与控制单元200的壳体发生短路时,能防止异常电流流过。另外,通过采用共用连接部26,能减少接地线上的连接部位,因此,阻抗得以降低,噪音得以降低。
实施方式2.
图3是表示本发明的实施方式2所涉及的半导体模块的半完成状态的俯视透视图。此外,在图3中,对与图1相同或相当的部分标注相同的标号。本实施方式2所涉及的半导体模块1A构成图1所示的助力转向装置的整体电路图中的逆变器电路2。
关于本实施方式2所涉及的助力转向装置的电路结构,由于与上述实施方式1相同,因此省略说明。另外,在图3中,虚线A表示本实施方式2中的半导体模块1A的模塑部的区域,单点划线B表示作为比较例的现有的半导体模块的模塑部的区域。
本实施方式2所涉及的半导体模块1A包括通过外框的引线框25b连接图1的电路图中的电源线和电源终端Vd的共用连接部26a。如图3所示,开关元件21u的漏极与电源终端Vd和共用连接部26a相连接。同样,开关元件21v、21w的漏极也与电源终端Vd和共用连接部26a相连接。
配置于模塑部外部的共用连接部26a是将电源线进行单根化的共用布线,并能用作为电源终端Vd。共用连接部26a沿在俯视下成型为矩形的模塑部的一条边进行配置。另外,共用连接部26a从不同于其它终端(Mv、Mu、Mw、Mm、Gh、Gm、Gl)的边延伸出来。
根据本实施方式2,使将开关元件21u、21v、21w的漏极与电源线及电源终端Vd连接的共用连接部26a配置于模塑部的外部,从而能使半导体模块1A实现小型化,能获得与上述实施方式1相同的效果。另外,通过采用共用连接部26a,能减少电源线上的连接部位,因此,阻抗得以降低,损耗得以降低。
此外,共用连接部26a在模塑部的外部将连接有作为芯片元器件的开关元件21u、21v、21w的终端相连接,并构成为共用布线,因此,能提高散热性能,并能力图实现来自芯片元器件的发热的均匀化。
实施方式3.
图4是表示本发明的实施方式3所涉及的半导体模块的半完成状态的俯视透视图,图5是表示本实施方式3所涉及的半导体模块的立体图。此外,在图4中,对与图1相同或相当的部分标注相同的标号。本实施方式3所涉及的半导体模块1B构成图1所示的助力转向装置的整体电路图中的逆变器电路2。
关于本实施方式3所涉及的助力转向装置的电路结构,由于与上述实施方式1相同,因此省略说明。另外,在图4中,虚线A表示本实施方式3中的半导体模块1B的模塑部的区域。
本实施方式3所涉及的半导体模块1B的共用连接部26b与上述实施方式2相同,通过外框的引线框25b来连接图1的电路图中的电源线和电源终端Vd。
但是,在本实施方式3中,使连接于电动机100的电动机输出用终端Mu、Mv、Mw和作为电源终端Vd的共用连接部26b从在俯视下成型为矩形的模塑部的相同的边延伸出来。
若列举u相系统为例来进行说明,则u相的开关元件21u、22u、23u如图4所示那样进行配置。开关元件21u的漏极与电源终端Vd和电源线即共用连接部26b相连接,开关元件23u的源极经由横梁28d与电动机输出用终端Mu相连接。
v相、w相的开关元件也同样地进行配置,电动机输出用终端Mu、Mv、Mw沿图4中上方进行延伸。但是,开关元件21v的漏极经由横梁28e与电源终端Vd和共用连接部26b相连接。
延伸至模塑部外部的各终端中的电动机输出用终端Mu、Mv、Mw比较短,电源终端Vd比较长。此外,电源终端Vd通过共用连接部26b来连接各相的前端部。
在这样的状态下,对图4中用斜线来表示的不需要的引线框25c进行切割,进而如图5所示,将电动机输出用终端Mu、Mv、Mw向图中下方弯曲,将作为电源终端Vd的共用连接部26b向上方弯曲。由此,来防止电动机输出用终端Mu、Mv、Mw与电源终端Vd相接近。
这样,在将共用连接部26b和不与共用连接部26b相连接的其它终端(图4中为电动机输出用终端Mu、Mv、Mw)从模塑部的一条边延伸出来的情况下,这些终端中的至少一个向与芯片安装面的搭载有半导体元件的面正交的方向弯曲。
此外,在图5所示的示例中,使共用连接部26b和电动机输出用终端Mu、Mv、Mw两者沿与芯片安装面的搭载有半导体元件的面正交的方向分别向相反方向弯曲,但也可以仅使两者中的任意一个弯曲。
在仅使共用连接部26b和电动机输出用终端Mu、Mv、Mw中的任意一个弯曲的情况下,能适当决定使哪一个弯曲。另外,在仅使任意一个弯曲的情况下,能适当决定是向芯片安装面的搭载有半导体元件的面一侧弯曲,还是向搭载有半导体元件的面的相反侧弯曲。
例如,在将共用连接部26b向芯片安装面的搭载有半导体元件的面一侧弯曲的情况下,在将半导体模块1B的散热面搭载于散热器时,能防止共用连接部26b与散热器发生干扰。
另外,在将共用连接部26b向芯片安装面的搭载有半导体元件的面的相反侧弯曲的情况下,能减小半导体模块1B的上表面方向的尺寸。由此,例如在将搭载于半导体模块1B的各开关元件的控制信号用终端Gh、Gl、Gm向模块上表面方向延伸并与控制基板3相连接的情况下,能缩短控制信号用终端,能提高抗噪性。
此外,共用连接部26b的形状并不局限于图5所示的形状,可以考虑各种变形。例如,在将半导体模块1B安装于装置时,也可以将共用连接部26b的一端形成为端子状,使得与装置侧的电源线的连接变得容易。另外,为了与图1的电路图中的电容器7相连接,也可以在共用连接部26b的一端设置切口。由此,定位和连接变得容易。
根据本实施方式3,使将开关元件21u、21v、21w的漏极与电源线的终端Vd连接的共用连接部26b配置于模塑部的外部,从而能使半导体模块1B实现小型化,能获得与上述实施方式2相同的效果。
实施方式4.
图6是使用了本发明的实施方式4所涉及的半导体模块的助力转向装置的整体电路图,图7是对本实施方式4所涉及的半导体模块的半成品进行透视而得的俯视图。此外,在图6中,对与图1相同或相当的部分标注相同的标号,省略说明。图6所示的控制单元200a中所包含的逆变器电路2a作为本实施方式4所涉及的半导体模块1C由单个元器件构成。
如图6所示,本实施方式4所涉及的助力转向装置的电路结构在逆变器电路2a中对各相分别配置有电流检测用的分流电阻24u、24v、24w。除此以外的结构与图1相同,因此省略说明。
本实施方式4中的逆变器电路2a单独对流过各相的电流进行检测,因此,具有以下优点:能简化电动机的结构,并能更正确地检测电流。但是,在本实施方式4中,由于将3个分流电阻24u、24v、24w内置于半导体模块1C,因此,元器件数量增多,还必须考虑用于这些元器件的布线。
本实施方式4所涉及的半导体模块1C如图7所示,包括图6的电路图中的分流电阻24u、24v、24w下游的布线,即通过外框的引线框25b来连接接地线的共用连接部26c。此外,在图7中,虚线A表示本实施方式4中的半导体模块1C的模塑部的区域。
若列举u相系统为例来进行说明,则上桥臂的开关元件21u、下桥臂的开关元件22u、以及电动机用的开关元件23u如图7所示那样进行配置。下桥臂的开关元件22u的源极经由横梁28f与分流电阻24u相连接。
分流电阻24u的下游与外框的引线框25b即共用连接部26c相连接,配置于半导体模块1C的模塑部的外部。v相、w相也同样,使分流电阻24v、24w的下游延伸至引线框25b,通过共用连接部26c连接各相的接地线。共用连接部26c与接地终端Gnd相连接。
此外,半导体模块1C如图7所示,内置有开关元件4a、4b(参照图6),所述开关元件4a、4b构成连接或切断电源线的继电器4。开关元件4a、4b例如由FET构成,因此,能容易地与半导体模块1C一体化。
另外,共用连接部26c沿在俯视下成型为矩形的模塑部的长边进行配置,在短边侧延伸有终端(Bt、Vd、Gnd)及控制线12总计4根线。
根据本实施方式3,将由分流电阻24u、24v、24w下游的接地线合并为1根而得的共用布线即共用连接部26c配置于模塑部的外部,从而能使半导体模块1C实现小型化,能获得与上述实施方式1相同的效果。
实施方式5.
在上述实施方式1至实施方式4中,对由引线框25的一部分所构成的共用连接部进行了说明,但在本发明的实施方式5中,将对由不同于引线框的板状构件所构成的共用连接部进行说明。
图8是表示本实施方式5所涉及的半导体模块的立体图。半导体模块1D将由引线框所构成的终端25d、25e与由不同于引线框的板状构件所构成的共用连接部13相连接。共用连接部13与由引线框所构成的共用连接部相同,在模塑部的外部连接各电路中的同电位的至少一组终端。
此外,在图8中,通过共用连接部13连接两个终端25d、25e,但通过共用连接部13来进行连接的终端也可以为两个以上。共用连接部13与终端25d、25e能通过焊接、钎焊或铆接来进行连接。在通过焊接、钎焊来进行连接后,进行铆接,从而能进一步提高连接部的强度。
共用连接部13如图8所示,能连接从在俯视下成型为矩形的模塑部的不同的两边延伸出来的终端。由此,在同电位的终端从不同的两边延伸出来的情况下,将共用连接部13的阻抗降得比由引线框所构成的共用连接部要低的效果较大。
作为本实施方式5的参考例,图9示出了现有的半导体模块。在现有的半导体模块1E中,在将终端25f与外部元器件相连接时,有时会使用功率布线基板14那样的其它构件。功率布线基板14有时例如也将电源终端Vd和接地终端Gnd的布线进行共用。在使半导体模块1E的终端25f延伸至功率布线基板14的情况下,存在终端25f变长的问题。
对此,本实施方式5中的共用连接部13在半导体模块1D中完成并将同电位的终端25d、25e相连接,因此,无需使终端延伸至如图9所示的功率布线基板14、母线等。因此,能使终端25d、25e缩得较短,能力图实现半导体模块1D的小型化并获得降低阻抗的效果。
另外,由于与共用连接部13相连接的终端25d、25e可以较短,因此,能减小成为基础的引线框或削减废弃部分,能力图实现引线框的有效利用。此外,本发明可以在该发明的范围内对各实施方式自由地进行组合,或对各实施方式进行适当的变形、省略。
工业上的实用性
本发明作为在引线框上搭载有多个开关元件的半导体模块能运用于逆变器电路等。
Claims (15)
1.一种半导体模块,该半导体模块包括:引线框,该引线框具有电气独立的多个支承面;多个电子元器件,该多个电子元器件包含搭载于所述支承面上的多个半导体元件;以及模塑部,该模塑部利用模塑树脂来将所述引线框和所述电子元器件进行一体化,利用所述多个电子元器件来构成多个电路,利用向所述模塑部的外部延伸的所述引线框的一部分来构成连接所述各电路与外部元器件的多个端子,所述半导体模块的特征在于,
具有共用连接部,该共用连接部在所述模塑部的外部将所述各电路中的同电位的所述端子的至少一组进行连接,所述共用连接部是所述各线路的电源线、或接地线或其它布线的共用布线,并且是该共用布线的端子。
2.如权利要求1所述的半导体模块,其特征在于,
所述共用连接部由向所述模塑部外部延伸的所述引线框构成。
3.如权利要求2所述的半导体模块,其特征在于,
所述共用连接部成为所述引线框的外框的一部分。
4.如权利要求2所述的半导体模块,其特征在于,
所述模塑部在俯视下成型为矩形,所述共用连接部沿所述模塑部的一条边进行配置。
5.如权利要求4所述的半导体模块,其特征在于,
所述模塑部在俯视下成型为长方形,所述共用连接部沿所述模塑树脂的长边进行配置。
6.如权利要求2所述的半导体模块,其特征在于,
所述共用连接部向与所述支承面的搭载所述半导体元件的面正交的方向弯曲。
7.如权利要求6所述的半导体模块,其特征在于,
所述共用连接部向所述支承面的搭载所述半导体元件的面一侧弯曲。
8.如权利要求6所述的半导体模块,其特征在于,
所述共用连接部向所述支承面的搭载所述半导体元件的面的相反侧弯曲。
9.如权利要求2所述的半导体模块,其特征在于,
所述模塑部在俯视下成型为矩形,在所述共用连接部以及不与所述共用连接部相连接的所述端子从所述模塑部的一条边的一侧起进行延伸的情况下,所述共用连接部以及不与所述共用连接部相连接的所述端子两者中的至少一方朝与所述支承面的搭载所述半导体元件的面正交的方向弯曲。
10.如权利要求1所述的半导体模块,其特征在于,
所述共用连接部由不同于所述引线框的板状构件构成。
11.如权利要求10所述的半导体模块,其特征在于,
所述模塑部在俯视下成型为矩形,所述共用连接部将从所述模塑部的不同的两条边延伸的至少一组所述端子进行连接。
12.如权利要求10所述的半导体模块,其特征在于,
所述共用连接部通过焊接与所述端子相连接。
13.如权利要求10所述的半导体模块,其特征在于,
所述共用连接部通过钎焊与所述端子相连接。
14.如权利要求10所述的半导体模块,其特征在于,
所述共用连接部通过铆接与所述端子相连接。
15.如权利要求1所述的半导体模块,其特征在于,
所述共用连接部具有以下结构:连接有所述电子元器件的所述端子成为所述共用布线。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2013/079831 WO2015068196A1 (ja) | 2013-11-05 | 2013-11-05 | 半導体モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105706233A true CN105706233A (zh) | 2016-06-22 |
CN105706233B CN105706233B (zh) | 2018-11-09 |
Family
ID=53041004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380080721.1A Active CN105706233B (zh) | 2013-11-05 | 2013-11-05 | 半导体模块 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9640470B2 (zh) |
EP (2) | EP3067925B1 (zh) |
JP (1) | JP6026009B2 (zh) |
CN (1) | CN105706233B (zh) |
WO (1) | WO2015068196A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110010577A (zh) * | 2019-04-08 | 2019-07-12 | 深圳市鹏源电子有限公司 | 直插式功率器件、半导体组件、轮毂电机驱动器或汽车驱动器和新能源汽车 |
CN110366817A (zh) * | 2018-01-26 | 2019-10-22 | 新电元工业株式会社 | 电子模块 |
CN110859055A (zh) * | 2018-06-08 | 2020-03-03 | 新电元工业株式会社 | 半导体模块 |
CN112514058A (zh) * | 2018-08-02 | 2021-03-16 | 三菱电机株式会社 | 半导体模块 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017045875A (ja) * | 2015-08-27 | 2017-03-02 | 日本精工株式会社 | 半導体モジュールおよびその製造方法 |
CN108140631B (zh) * | 2015-09-28 | 2021-02-05 | 三菱电机株式会社 | 半导体装置 |
JP7137516B2 (ja) * | 2019-04-12 | 2022-09-14 | 株式会社日立製作所 | 半導体装置および電力変換装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002359349A (ja) * | 2001-03-30 | 2002-12-13 | Yazaki Corp | 車載用電装ユニット、半導体リレーモジュール及びそれに用いられるリードフレーム |
CN1855476A (zh) * | 2005-04-28 | 2006-11-01 | 三菱电机株式会社 | 半导体装置 |
JP2010287699A (ja) * | 2009-06-11 | 2010-12-24 | Mitsubishi Electric Corp | パワーモジュール |
WO2013001905A1 (ja) * | 2011-06-28 | 2013-01-03 | トヨタ自動車株式会社 | リードフレーム、及び、パワーモジュール |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6457742A (en) * | 1987-08-28 | 1989-03-06 | Nec Corp | Hybrid integrated circuit device |
JPH03190269A (ja) * | 1989-12-20 | 1991-08-20 | Hitachi Ltd | 半導体装置 |
DE10101086B4 (de) * | 2000-01-12 | 2007-11-08 | International Rectifier Corp., El Segundo | Leistungs-Moduleinheit |
KR100442847B1 (ko) * | 2001-09-17 | 2004-08-02 | 페어차일드코리아반도체 주식회사 | 3차원 구조를 갖는 전력 반도체 모듈 및 그 제조방법 |
JP4110513B2 (ja) * | 2002-05-01 | 2008-07-02 | 富士電機ホールディングス株式会社 | 半導体パワーモジュールの製造方法 |
JP2004273749A (ja) * | 2003-03-07 | 2004-09-30 | Fuji Electric Fa Components & Systems Co Ltd | 半導体パワーモジュール |
JP2009182230A (ja) * | 2008-01-31 | 2009-08-13 | Nippon Inter Electronics Corp | 樹脂封止型半導体装置及びその製造方法 |
JP5067679B2 (ja) | 2010-05-21 | 2012-11-07 | 株式会社デンソー | 半導体モジュール、および、それを用いた駆動装置 |
JP5201171B2 (ja) * | 2010-05-21 | 2013-06-05 | 株式会社デンソー | 半導体モジュール、および、それを用いた駆動装置 |
JP5908294B2 (ja) * | 2012-02-03 | 2016-04-26 | 株式会社東芝 | 半導体装置およびその製造方法 |
US9576932B2 (en) * | 2013-03-09 | 2017-02-21 | Adventive Ipbank | Universal surface-mount semiconductor package |
US8981539B2 (en) * | 2013-06-10 | 2015-03-17 | Alpha & Omega Semiconductor, Inc. | Packaged power semiconductor with interconnection of dies and metal clips on lead frame |
-
2013
- 2013-11-05 CN CN201380080721.1A patent/CN105706233B/zh active Active
- 2013-11-05 JP JP2015546166A patent/JP6026009B2/ja active Active
- 2013-11-05 US US14/904,160 patent/US9640470B2/en active Active
- 2013-11-05 WO PCT/JP2013/079831 patent/WO2015068196A1/ja active Application Filing
- 2013-11-05 EP EP13897106.4A patent/EP3067925B1/en active Active
- 2013-11-05 EP EP20178245.5A patent/EP3726575A1/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002359349A (ja) * | 2001-03-30 | 2002-12-13 | Yazaki Corp | 車載用電装ユニット、半導体リレーモジュール及びそれに用いられるリードフレーム |
CN1855476A (zh) * | 2005-04-28 | 2006-11-01 | 三菱电机株式会社 | 半导体装置 |
JP2010287699A (ja) * | 2009-06-11 | 2010-12-24 | Mitsubishi Electric Corp | パワーモジュール |
WO2013001905A1 (ja) * | 2011-06-28 | 2013-01-03 | トヨタ自動車株式会社 | リードフレーム、及び、パワーモジュール |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110366817A (zh) * | 2018-01-26 | 2019-10-22 | 新电元工业株式会社 | 电子模块 |
CN110859055A (zh) * | 2018-06-08 | 2020-03-03 | 新电元工业株式会社 | 半导体模块 |
CN110859055B (zh) * | 2018-06-08 | 2022-08-02 | 新电元工业株式会社 | 半导体模块 |
CN112514058A (zh) * | 2018-08-02 | 2021-03-16 | 三菱电机株式会社 | 半导体模块 |
CN112514058B (zh) * | 2018-08-02 | 2024-04-09 | 三菱电机株式会社 | 半导体模块 |
CN110010577A (zh) * | 2019-04-08 | 2019-07-12 | 深圳市鹏源电子有限公司 | 直插式功率器件、半导体组件、轮毂电机驱动器或汽车驱动器和新能源汽车 |
Also Published As
Publication number | Publication date |
---|---|
WO2015068196A1 (ja) | 2015-05-14 |
EP3067925B1 (en) | 2020-12-23 |
EP3067925A1 (en) | 2016-09-14 |
CN105706233B (zh) | 2018-11-09 |
US20160148862A1 (en) | 2016-05-26 |
US9640470B2 (en) | 2017-05-02 |
JP6026009B2 (ja) | 2016-11-16 |
JPWO2015068196A1 (ja) | 2017-03-09 |
EP3067925A4 (en) | 2017-06-28 |
EP3726575A1 (en) | 2020-10-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105706233A (zh) | 半导体模块 | |
EP2824696B1 (en) | Semiconductor device and method of manufacture thereof | |
KR102378192B1 (ko) | 반도체 장치 | |
US6710439B2 (en) | Three-dimensional power semiconductor module and method of manufacturing the same | |
JP2000049184A (ja) | 半導体装置およびその製造方法 | |
CN103400832A (zh) | 功率半导体装置 | |
US9633967B2 (en) | Semiconductor module | |
CN106133906A (zh) | 半导体装置及其制造方法 | |
US9041170B2 (en) | Multi-level semiconductor package | |
NL2018505B1 (en) | Semiconductor device | |
JPWO2014192348A1 (ja) | 半導体装置 | |
CN106165089B (zh) | 半导体模块以及搭载有半导体模块的驱动装置 | |
TWI495072B (zh) | 半導體裝置 | |
CN106471870A (zh) | 电路结构体 | |
JP2005051109A (ja) | パワー半導体モジュール | |
CN202564281U (zh) | 半导体模块 | |
JP2018125424A (ja) | 半導体モジュールと、これを備えたコントロールユニット、電動パワーステアリングシステム | |
JP2013201894A (ja) | 電力変換装置 | |
JP2014053449A (ja) | 半導体装置、半導体装置の製造方法 | |
JP2017045875A (ja) | 半導体モジュールおよびその製造方法 | |
US9935040B2 (en) | Semiconductor module | |
JP2017038053A (ja) | 半導体モジュールと、これを備えた駆動装置、電動パワーステアリング装置および車両 | |
JP2018037514A (ja) | 半導体モジュールと、これを備えた駆動装置、電動パワーステアリング装置および車両 | |
US20150162269A1 (en) | Semiconductor die package with insulated wires for routing power signals | |
US20140374892A1 (en) | Lead frame and semiconductor device using same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |