JP7137516B2 - 半導体装置および電力変換装置 - Google Patents
半導体装置および電力変換装置 Download PDFInfo
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- JP7137516B2 JP7137516B2 JP2019076467A JP2019076467A JP7137516B2 JP 7137516 B2 JP7137516 B2 JP 7137516B2 JP 2019076467 A JP2019076467 A JP 2019076467A JP 2019076467 A JP2019076467 A JP 2019076467A JP 7137516 B2 JP7137516 B2 JP 7137516B2
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- 239000004065 semiconductor Substances 0.000 title claims description 140
- 238000006243 chemical reaction Methods 0.000 title claims description 10
- 238000007667 floating Methods 0.000 claims description 140
- 238000007789 sealing Methods 0.000 claims description 125
- 239000000463 material Substances 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 description 89
- 238000010586 diagram Methods 0.000 description 18
- 239000003990 capacitor Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000000047 product Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000009766 low-temperature sintering Methods 0.000 description 5
- 239000002923 metal particle Substances 0.000 description 5
- 238000005219 brazing Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 229910001111 Fine metal Inorganic materials 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001923 silver oxide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004643 cyanate ester Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29113—Bismuth [Bi] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29118—Zinc [Zn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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Description
パワー半導体モジュールでは、半導体素子に高電圧が印加されるため、半導体素子を収容するケース等の絶縁部材に空隙やクラック等の欠陥が存在すると、その欠陥部に電界が集中し、コロナ放電が発生する可能性がある。コロナ放電が発生した状態が続くと、絶縁部材が劣化し、最終的に絶縁破壊してパワー半導体モジュールが故障する虞がある。コロナ放電は、気圧が低い高高度な環境ほど発生し易い。
本発明の第2の態様における電力変換装置は、上記半導体装置と、前記半導体素子の制御端子に接続された制御端子部と、を備え、前記制御端子部は、前記直流端子または前記交流端子に隣接して設けられ、前記制御端子部と、前記直流端子または前記交流端子との間に、少なくとも1つの別のフローティング端子が設けられている。
以下、図1~図14を参照して、本発明の半導体装置の第1の実施形態を説明する。
図1は、本発明の電力変換回路を有する半導体装置の回路図である。
電力変換装置としての機能を有する半導体装置は、インバータ回路140と、平滑用のコンデンサモジュール801と、制御部170とを備えている。インバータ回路140にはバッテリ802が電気的に接続されている。バッテリ802とインバータ回路140との間に設けられたコンデンサモジュール801は、直流電流を平滑化する。平滑用のコンデンサモジュール801は、正極側コンデンサ端子811と負極側コンデンサ端子812を有する。平滑用のコンデンサモジュール801は、直流コネクタ138を介してバッテリ802と電気的に接続されている。インバータ回路140は、直流正極側端子314を介して正極側コンデンサ端子811と接続され、かつ直流負極側端子316を介して負極側コンデンサ端子812と接続されている。
半導体装置900は、図1に示された上アーム回路901を有する、1 in 1パワー半導体モジュールである。
半導体装置900は、図1に示されるIGBT101およびダイオード111(図5参照)と、IGBT101およびダイオード111を封止する封止部材501と、コレクタ端子(直流端子)21Cと、エミッタ端子31Eと、2つのゲート端子61(制御端子)と、2つのエミッタセンス端子71と、フローティング端子51、52、53と、コレクタ側実装部220(図4参照)と、エミッタ側実装部320(図4参照)とを有する。
封止部材501の他の側面501d、一対の端面501e、501fから露出する端子部材等はない。
半導体装置900Aは、図1に示された下アーム回路902を有する、1 in 1パワー半導体モジュールである。
半導体装置900Aは、図1に示されるIGBT102およびダイオード112と、IGBT102およびダイオード112を封止する封止部材501と、コレクタ端子(直流端子)22Cと、エミッタ端子32Eと、2つのゲート端子62(制御端子)と、2つのエミッタセンス端子72と、フローティング端子51、52、53と、コレクタ側実装部220と、エミッタ側実装部320とを有する。
封止部材501の他の側面501d、一対の端面501e、501fから露出する端子部材等はない。
以下では、上アーム側の半導体装置900について詳細に説明するが、上述した対応する部材に置き換えることで、下アーム側の半導体装置900Aについても、以下の説明が適用される。
なお、上アーム回路901のコレクタ端子21C、エミッタ端子31E、ゲート端子61、エミッタセンス端子71、および下アーム回路902のコレクタ端子22C、エミッタ端子32E、2つのゲート端子62、エミッタセンス端子72は、図1の回路図に図示されている。
図4に図示されるように、半導体装置900は、IGBT101およびダイオード111を、エミッタ側実装部320とコレクタ側実装部220とにより上下から挟み込んだ構造を有する。
コレクタ側実装部220は、コレクタ側導体201と、絶縁層211と、メタライズ層221とが、上方から下方に向けてこの順に積層されて構成されている。コレクタ側導体201、絶縁層211、メタライズ層221は、それぞれ、平面視で矩形形状を有し、絶縁層211が、コレクタ側導体201およびメタライズ層221より一回り大きく形成されている。
絶縁層211、311は、セラミックス等の低熱膨張の絶縁材料により形成されている。コレクタ側導体201と絶縁層211およびエミッタ側導体301と絶縁層311との間に、それぞれ、低熱膨張で熱伝導率が高いモリブデン、タングステン、カーボン、あるいはこれらのいずれかと銅、アルミニウムとの複合材からなる層を設けてもよい。
IGBT101のコレクタ側導体201に対向する下面には、図5には図示しないが、コレクタ電極121が形成されている。IGBT101のエミッタ側導体301に対向する上面には、ゲート電極161と、エミッタ電極131が形成されている。2つのIGBT101のコレクタ電極121は、それぞれ、コレクタ側導体201に金属接合されている。2つのIGBT101のエミッタ電極131は、それぞれ、エミッタ側導体301に金属接合されている。
上記構成により、2対のIGBT101とダイオード111は、図1に示された上アーム回路901を構成する。
なお、コレクタ側導体201およびエミッタ側導体301は、図1の回路図に図示されている。
ここで、フローティングとは、電気的に浮いている状態であり、コレクタ側導体201、エミッタ側導体301のいずれとも電気的に接続されず、接地部にも接続されず、独立した電位を示す状態をいう。
図2、図5に図示されるように、エミッタ端子31Eとコレクタ端子21Cは、それぞれ、突出部511の間に配置されている。各フローティング端子51~53は、封止部材501と一体成型されたものである。各フローティング端子51~53の先端面54は、封止部材501の突出部511の端面から露出している。
なお、上記では、エミッタ端子31Eとコレクタ端子21Cの両方を、屈曲した構造として例示したが、エミッタ端子31Eとコレクタ端子21Cの一方のみを屈曲するようにしてもよい。
また、エミッタ端子31Eと一方のゲート端子61との間にフローティング端子52が設けられている。これにより、エミッタ端子31Eとフローティング端子52との間の領域510Bの封止部材501は、エミッタ端子31Eとフローティング端子52との間の領域52Aと、ゲート端子61とフローティング端子52との間の領域52Bに2分割される。
さらに、コレクタ端子21Cと他方のゲート端子61との間にフローティング端子53が設けられている。これにより、コレクタ端子21Cとフローティング端子53との間の領域510Cの封止部材501は、ゲート端子61とフローティング端子53との間の領域53Aと、コレクタ端子21Cとフローティング端子53との間の領域53Bに2分割される。
V=V1・(Ce+Cf)/Cf 式(1)
また、上記定義より、式(2)、式(3)が成り立つ。
Ce=ε0・S/de 式(2)
Cf=ε0・ε・S/df 式(3)
式(2)、式(3)より、式(1)は、式(1a)となる。
V=V1・(df/(ε・de)+1) 式(1a)
図7を用いて、コロナ放電が発生する電圧について説明する。電極間に空隙がある場合、コロナ放電が開始する電圧は、気圧と電極間の空隙長の関数で示される事が、パッシェンによって示され、その後、多くの研究者によって理論的、実験的に確認されている。図7は、気圧pにおいて、電極間距離dの電極に電圧を印加した際に、コロナ放電が発生する電圧を、気圧pと電極間距離dの積との関係で示した図である。
図8は、25℃、1atmでの最小コロナ放電開始電圧と絶縁層の厚さdfの関係を示す。絶縁層の厚さdfが厚くなると、電圧Vに対して絶縁層602が分担する電圧が高くなるため、空気層601が分担する電圧V1が小さくなる。よって、絶縁層の厚さdfが大きくなるほど、最小コロナ放電開始電圧が高くなる。
図9は、25℃、絶縁層の比誘電率5での最小コロナ放電開始電圧と絶縁層の厚さdfの関係を示す。図9から高度が高く気圧が低いほど、コロナ放電開始電圧は小さくなることがわかる。この対策として、高度が高く気圧が低いほど、絶縁層の厚さを厚くする必要があり、このためには、端子間距離を増加させる必要がある。
図10は、1atm、絶縁層の比誘電率5での最小コロナ放電開始電圧と絶縁層の厚さdfの関係を示す。図10から温度が高いほど、コロナ放電開始電圧は小さくなることがわかる。この対策として、温度が高いほど、絶縁層の厚さを厚くする必要があり、このためには、端子間距離を増加させる必要がある。
本実施形態では、図5に示すように、コレクタ端子21Cとエミッタ端子31Eとの間、コレクタ端子21Cと一方のゲート端子61との間、エミッタ端子31Eと他方のゲート端子61との間に、それぞれ、フローティング端子51、52、53が1本ずつ挿入されている。
一例として、仮に、コレクタ端子21Cとエミッタ端子31E間における最小コロナ放電電圧を2.6kVpとすると、この領域の封止部材501の厚さは、フローティング端子51が無い場合には7mm以上必要であるが、フローティング端子51を設けることにより、2mm×2=4mm以上であればよいこととなる。このことは、コレクタ端子21Cと一方のゲート端子61間の領域の封止部材501の厚さ、およびエミッタ端子31Eと他方のゲート端子61間の領域の封止部材501の厚さについても同様である。
例えば、コレクタ端子21Cとエミッタ端子31E間に3つのフローティング端子51を設けて、コレクタ端子21Cとエミッタ端子31E間を4等分に分割すると、各分割領域間の端子間電圧は1/4となる。このコレクタ端子21Cとエミッタ端子31E間を4等分に分割した構造では、フローティング端子51が無い場合におけるコレクタ端子21Cとエミッタ端子31E間における最小コロナ放電電圧が2.6kVpであれば、各分割領域における封止部材501の厚さを0.4mmとすることができ、総厚で0.4×4=1.6mmとすることができる。
つまり、電圧Vが印加される端子間に設けるフローティング端子51~53の数が増加するほど、絶縁層の厚さを低減することができる。
絶縁層を薄肉化して端子の間隔を小さくすることで半導体装置の小型化ができ、また、これに伴い、インダクタンスが低くなり、電力変換装置の低損失化を達成することができる。
次に、本実施形態の半導体装置の製造方法の一例を図12~図14を参照して説明する。
図12に図示されるように、予め、コレクタ側導体201と絶縁層211および絶縁層211とメタライズ層221を、それぞれ接合し、コレクタ側実装部220を形成しておく。コレクタ側導体201と絶縁層211との接合および絶縁層211とメタライズ層221との接合は、例えば、ロウ材を用いて行う。
そして、図2に図示されるように、コレクタ端子21Cを、上方に向けて立ち上がる立ち上げ部141と、立ち上げ部141から垂直に屈曲された水平部142が形成されるように屈曲する。同様に、エミッタ端子31Eを、下方に向けて屈曲された立ち下げ部143と、立ち下げ部143から垂直に屈曲された水平部144が形成されるように屈曲する。
これにより、図2に図示される半導体装置900が得られる。
ここで、上アーム回路を有する半導体装置900では、エミッタ端子31Eが交流端子となる。このため、上アーム回路を有する半導体装置900では、エミッタ端子31Eとコレクタ端子21Cとの間、およびエミッタ端子31Eと一方のゲート端子61との間にフローティング端子51、52を設けることが必要である。
これに対し、下アーム回路を有する半導体装置900Aでは、コレクタ端子22Cが交流端子となる。このため、下アーム回路を有する半導体装置900Aでは、エミッタ端子32Eとコレクタ端子22Cとの間、およびコレクタ端子22Cと他方のゲート端子61との間にフローティング端子51、53を設けることが必要である。
(1)半導体装置900は、直流電力を交流電力に変換するIGBT101(半導体素子)と、直流電力を伝達するコレクタ端子21C(直流端子)と、交流電力を伝達するエミッタ端子31E(交流端子)と、IGBT101、コレクタ端子21Cの少なくとも一部およびエミッタ端子31Eの少なくとも一部を封止する封止部材501と、コレクタ端子21Cとエミッタ端子31Eとの間に配置された、少なくとも1つのフローティング端子51とを備える。このため、コレクタ端子21Cとエミッタ端子31Eとの間の領域の封止部材501が、フローティング端子51により2分割以上に分割され、各端子間に印加される電圧が低減される。このため、コレクタ端子21Cとエミッタ端子31Eとの間の領域の封止部材501の厚さを小さくしてもコロナ放電の発生を抑制することが可能となり、半導体装置900の小型化を図ることができる。また、半導体装置900の小型化に伴い、インダクタンスが低くなり、電力変換装置の低損失化ができる効果がある。
図15は、本発明の半導体装置の第2の実施形態を示す外観斜視図であり、図16は、図15に図示された半導体装置の上面側から、エミッタ側実装部を透過してみた平面図である。
第2の実施形態の半導体装置900は、上アーム回路901と下アーム回路902を有する2in 1パワー半導体モジュールである。
すなわち、第2の実施形態の半導体装置900は、IGBT101、102、ダイオード111、112、コレクタ端子21C、エミッタ端子32E、エミッタ端子31E(コレクタ端子22C)、ゲート端子61、62およびエミッタセンス端子71、72を有する。図1に図示されるように、IGBT101は、ゲート電極161、コレクタ電極121、エミッタ電極131およびエミッタセンス電極171を有し、IGBT102は、ゲート電極162、コレクタ電極122、エミッタ電極132およびエミッタセンス電極172を有する。エミッタ端子31Eは、IGBT101のエミッタ電極131およびIGBT102のコレクタ電極122に接続されており、コレクタ端子22Cでもあるが、以下では、エミッタ端子31Eと呼称する。
IGBT101のエミッタ電極131およびダイオード111のアノード電極はエミッタ側導体301に接合されている。IGBT102のエミッタ電極132およびダイオード112のアノード電極は、エミッタ側導体302(図示せず)に接合されている。
エミッタ端子31Eの一端は、コレクタ側導体202に接合されている。エミッタ側導体301とコレクタ側導体202とは、中間導体202aにより接続されているため、エミッタ端子31Eの一端は、エミッタ側導体301にも電気的に接続されている。
エミッタ端子31Eの他端には、モータジェネレータ400に電気的に接続される交流端子41(図1参照)が接続される。
なお、コレクタ側導体202およびエミッタ側導体302は、図1の回路図に図示されている。
図示はしないが、IGBT101のゲート電極161およびエミッタセンス電極171は、それぞれ、ゲート端子61およびエミッタセンス端子71に、ボンディングワイヤにより接続されている。また、IGBT102のゲート電極162よびエミッタセンス電極172は、それぞれ、ゲート端子62およびエミッタセンス端子72に、ボンディングワイヤにより接続されている。
コレクタ端子21Cとエミッタ端子32Eとの間、エミッタ端子32Eとエミッタ端子31Eとの間、エミッタ端子31Eとゲート端子62と間には、封止部材501の突出部511が設けられている。フローティング端子51、52は、突出部511により外周を覆われている。但し、フローティング端子51、52の先端面54は、突出部511から露出している。
第2の実施形態における他の構造は、第1の実施形態と同様である。
従って、実施形態2においても、実施形態1と同様な効果を奏する。
また、実施形態2は、上下アーム回路が一体化された2 in 1の半導体装置であるので、半導体装置の小型化を図ることができる。
図17は、本発明の半導体装置の第3の実施形態を示し、半導体装置の上面側から、エミッタ側実装部を透過してみた平面図である。
第3の実施形態の半導体装置900は、第1の実施形態に対し、フローティング端子51、52、53それぞれの先端面54が、封止部材501の突出部511により覆われている点で相違する。また、第3の実施形態の半導体装置900は、各フローティング端子51、52、53の根元側端部に接続されるフローティング電極530を有する点でも第1の実施形態と相違する。
これ以外の構造は、第1の実施形態と同様である。
この半導体装置を製造するには、フローティング端子51、52、53を、リードフレーム700とは別部材として形成しておき、フローティング端子51、52、53の根元側端部をフローティング電極530に接合した状態で、封止部材501により、封止する製造方法を採用することができる。
従って、実施形態3においても、実施形態1と同様な効果を奏する。
図18は、本発明の半導体装置の第4の実施形態を示し、半導体装置の上面側から、エミッタ側実装部を透過してみた平面図である。
第4の実施形態の半導体装置900は、第1の実施形態とは、各フローティング端子51、52、53それぞれを覆う封止部材551、552、553を、封止部材501とは異なる材料により形成した点で相違する。
この構造では、予め、各フローティング端子51、52、53それぞれを封止部材551,552、553により覆っておき、封止部材501により封止する際、各フローティング端子51、52、53が一体化された封止部材551、552、553を封止部材501に一体化する製造方法を採用することが可能となる。
また、第4の実施形態では、各フローティング端子51、52、53を封止する封止部材551、552、553の誘電率を封止部材501の誘電率よりも小さいものとすることにより、コロナ放電開始電圧を高くすることができるという効果もある。
また、第4の実施形態において、第3の実施形態と同様に、フローティング電極530を絶縁層211又は絶縁層311に設けておき、各フローティング端子51、52、53をの根元側端部を封止部材551、552、553から露出させ、この露出部分をフローティング電極530に接合する構造とすることもできる。このような構造とすることにより、各端子の位置精度を高めることができる。
図19は、本発明の半導体装置の第5の実施形態を示す外観斜視図である。
第5の実施形態の半導体装置900は、第1の実施形態に対し、フローティング端子51、52、53の封止部材501から突出する長さを、コレクタ端子21Cおよびエミッタ端子31Eの封止部材501から突出する長さと同じか、それより大きくした点が相違する。
すなわち、第5の実施形態の半導体装置900は、フローティング端子51、52、53の先端面がコレクタ端子21Cおよびエミッタ端子31Eの先端面よりも突出している。
また、コレクタ端子21Cおよびエミッタ端子31Eは、直線状に形成されており、第1の実施形態のように、上方向または下方向に屈曲される屈曲部を有していない。
第5の実施形態の他の構成は、第1の実施形態と同様である。従って、第5の実施形態においても、第1の実施形態と同様な効果を奏する。
図20は、本発明の半導体装置の第6の実施形態を示す外観斜視図である。
第6の実施形態の半導体装置900は、第1の実施形態におけるコレクタ端子21Cおよびエミッタ端子31Eを屈曲部を有していない平板状部材とし、コレクタ端子21C上およびエミッタ端子31E上に、L字形状に屈曲された接続材81A、41Aを接合した構造を有する。
第6の実施形態の他の構成は、第1の実施形態と同様である。従って、第5の実施形態においても、第1の実施形態と同様な効果を奏する。
なお、第6の実施形態は、第5の実施形態に示す半導体装置900の完成後に形成することができる。
図21は、本発明の半導体装置の第7の実施形態を示す外観斜視図である。
第7の実施形態の半導体装置900は、第6の実施形態に対し、コレクタ端子21C、エミッタ端子31E、フローティング端子51、52、53全体を封止部材502により封止した構造を有する。封止部材502は、2つのゲート端子61および2つのエミッタセンス端子71それぞれの先端側を露出して、他の部分を封止している。
第7の実施形態における他の構成は、第6の実施形態と同様である。
なお、第7の実施形態は、第6の実施形態の半導体装置900を完成後に形成することができる。
従って、第7の実施形態にいても、第1の実施形態と同様の効果を奏する。
また、コロナ放電開始電圧が高くなることで、IGBT101、102のコレクタ電極121、122やエミッタ電極131、132にそれぞれ接続されるコレクタ端子21Cやエミッタ端子31Eの位置ずれ誤差の許容公差を大きくすることができ、組立て効率を向上することができる。
また、第3の実施形態~第7の実施形態は、第2の実施形態として示す、上アーム回路901および下アーム回路902を有する、2 in 1回路の半導体装置900とすることができる。
22C コレクタ端子(交流端子)
31E エミッタ端子(交流端子)
32E エミッタ端子(直流端子)
41A 接続材(交流端子部材)
51、52、53 フローティング端子
54 先端面
61、62 ゲート端子(制御端子)
81A 接続材(直流端子部材)
101、102 IGBT(半導体素子)
111、112 ダイオード
161、162 ゲート電極(制御電極)
162 ゲート電極
170 制御部
201、202 コレクタ側導体
211 絶縁層
220 コレクタ側実装部
311 絶縁層
320 エミッタ側実装部
501、502 封止部材
511 突出部
530 フローティング電極
551、552、553 封止部材
700 リードフレーム
801 コンデンサモジュール
802 バッテリ
900、900A 半導体装置
901 上アーム回路
902 下アーム回路
Claims (6)
- 直流電力を交流電力に変換する半導体素子と、
直流電力を伝達する直流端子と、
交流電力を伝達する交流端子と、
前記半導体素子、前記直流端子の少なくとも一部および前記交流端子の少なくとも一部を封止する封止部材と、
前記直流端子と前記交流端子との間に配置された、少なくとも1つのフローティング端子とを備え、
前記フローティング端子は、前記封止部材の材料とは異なる材料からなる樹脂により覆われている半導体装置。 - 直流電力を交流電力に変換する半導体素子と、
直流電力を伝達する直流端子と、
交流電力を伝達する交流端子と、
前記半導体素子、前記直流端子の少なくとも一部および前記交流端子の少なくとも一部を封止する封止部材と、
前記直流端子と前記交流端子との間に配置された、少なくとも1つのフローティング端子とを備え、
前記フローティング端子は、前記封止部材および/または前記封止部材と異なる材料からなる樹脂により、先端部を含む全体が覆われている半導体装置。 - 直流電力を交流電力に変換する半導体素子と、
直流電力を伝達する直流端子と、
交流電力を伝達する交流端子と、
前記半導体素子、前記直流端子の少なくとも一部および前記交流端子の少なくとも一部を封止する封止部材と、
前記直流端子と前記交流端子との間に配置された、少なくとも1つのフローティング端子とを備え、
前記フローティング端子は、少なくとも一部が、前記封止部材より誘電率が小さい樹脂により覆われている半導体装置。 - 直流電力を交流電力に変換する半導体素子と、
直流電力を伝達する直流端子と、
交流電力を伝達する交流端子と、
前記半導体素子、前記直流端子の少なくとも一部および前記交流端子の少なくとも一部を封止する封止部材と、
前記直流端子と前記交流端子との間に配置された、少なくとも1つのフローティング端子とを備え、
前記フローティング端子の先端面は、前記直流端子の先端面および前記交流端子の先端面より突出している半導体装置。 - 直流電力を交流電力に変換する半導体素子と、
直流電力を伝達する直流端子と、
交流電力を伝達する交流端子と、
前記半導体素子、前記直流端子の少なくとも一部および前記交流端子の少なくとも一部を封止する封止部材と、
前記直流端子と前記交流端子との間に配置された、少なくとも1つのフローティング端子とを備え、
前記直流端子、前記交流端子および前記フローティング端子の前記封止部材から露出する根元部は、ほぼ一直線状に配列され、前記直流端子の先端部または前記直流端子に接続された直流端子部材と、前記交流端子の先端部または前記交流端子に接続された交流端子部材とは、前記フローティング端子の高さ方向の、相互に反対方向に延在されている半導体装置。 - 請求項1から5までのいずれか一項に記載の半導体装置と、
前記半導体素子の制御電極に接続された制御端子と、を備え、
前記制御端子は、前記直流端子または前記交流端子に隣接して設けられ、
前記制御端子と、前記直流端子または前記交流端子との間に、少なくとも1つの別のフローティング端子が設けられている電力変換装置。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004104102A (ja) | 2002-08-21 | 2004-04-02 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP2012138409A (ja) | 2010-12-24 | 2012-07-19 | Hitachi Automotive Systems Ltd | パワーモジュールの絶縁構造とパワーモジュールを用いた電力変換装置 |
JP2016157850A (ja) | 2015-02-25 | 2016-09-01 | トヨタ自動車株式会社 | 半導体モジュール、半導体装置、及び、半導体装置の製造方法 |
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US8823041B2 (en) * | 2011-10-27 | 2014-09-02 | Seoul Semiconductor Co., Ltd. | Light emitting diode package and light emitting module comprising the same |
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CN105706233B (zh) | 2013-11-05 | 2018-11-09 | 三菱电机株式会社 | 半导体模块 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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JP2012138409A (ja) | 2010-12-24 | 2012-07-19 | Hitachi Automotive Systems Ltd | パワーモジュールの絶縁構造とパワーモジュールを用いた電力変換装置 |
JP2016157850A (ja) | 2015-02-25 | 2016-09-01 | トヨタ自動車株式会社 | 半導体モジュール、半導体装置、及び、半導体装置の製造方法 |
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