CN112514058B - 半导体模块 - Google Patents

半导体模块 Download PDF

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Publication number
CN112514058B
CN112514058B CN201880096090.5A CN201880096090A CN112514058B CN 112514058 B CN112514058 B CN 112514058B CN 201880096090 A CN201880096090 A CN 201880096090A CN 112514058 B CN112514058 B CN 112514058B
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semiconductor module
molding resin
terminals
terminal
wiring
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CN112514058A (zh
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竹内谦介
船越政行
长尾崇志
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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Abstract

本发明获得一种能防止翘曲或歪斜并提高可靠性的半导体模块(1)。半导体模块(1)包括:构成多个端子(C1‑C6、B1、B2、M1、M2)或布线(G1、G2)的基座(10a);安装于端子(C1‑C6、B1、B2、M1、M2)的搭载部(21)的半导体开关元件(T1‑T4);以及对半导体开关元件(T1‑T4)进行密封的模塑树脂(20),模塑树脂(20)的外周侧端部中,在端子(C1‑C6、B1、B2、M1、M2)或布线(G1、G2)的一部分形成有具有比端子(C1‑C6、B1、B2、M1、M2)或布线(G1、G2)要宽的宽度的宽幅部(G10、G20),宽幅部(G10、G20)以从模塑树脂(20)的外周侧端部朝向内部延伸的状态埋入并固定于模塑树脂(20)的内部。

Description

半导体模块
技术领域
本申请涉及半导体模块。
背景技术
现有半导体模块中,排列有正(+)电源端子、负(-)电源端子、输出(负载)端子、控制信号端子等多个端子,内部配置多个半导体开关元件等并与各端子相连接,通过树脂对整体进行了模塑。
现有技术文献
专利文献
专利文献1:日本专利第5201171号公报
发明内容
发明所要解决的技术问题
例如,专利文献1中所公开的现有半导体模块的内部结构中,各端子和连接盘由作为同一材料的铜板来形成,对整体进行树脂模塑。另外,铜板上安装有半导体开关元件,且端子被延伸出。另外,在半导体模块的形成工序中,铜板连接至例如形成外框的框架,需要确保铜板的平面度。
然而,在上述专利文献1中所公开的半导体模块中,由将半导体开关元件安装于铜板的工序、进行引线键合处理后通过树脂进行模塑的工序、最后将不需要的外周框架以及与其分别连接的不需要部分切割的工序来完成,由于在各工序中对铜板施加压力,因此难以确保平面度,存在难以防止铜板的翘曲或歪斜的问题。
本申请公开用于解决上述问题的技术,其目的在于提供一种半导体模块,能在具有半导体开关元件的半导体模块中防止翘曲或歪斜并提高可靠性。
解决技术问题所采用的技术方案
本申请所公开的半导体模块包括:构成多个端子或布线的基座;安装于所述端子的搭载部的半导体开关元件;以及对所述半导体开关元件进行密封的模塑树脂,所述模塑树脂的外周侧端部中,在所述端子或所述布线的一部分形成有具有大于所述端子或所述布线的宽度的宽幅部,所述宽幅部以从所述模塑树脂的外周侧端部朝向内部延伸的状态埋入并固定于所述模塑树脂的内部。
发明效果
根据本申请所公开的半导体模块,在模塑树脂的外周侧端部中,在端子或布线的一部分形成有具有大于端子或布线的宽度的宽幅部,宽幅部以从模塑树脂的外周侧端部朝向内部延伸的状态埋入并固定于模塑树脂的内部,因此能够获得能防止翘曲或歪斜并提高可靠性的半导体模块。
附图说明
图1是表示实施方式1所涉及的半导体模块的电路图。
图2是表示实施方式1所涉及的半导体模块的内部结构的俯视图。
图3是表示实施方式2所涉及的半导体模块的内部结构的俯视图。
图4是表示实施方式3所涉及的半导体模块的内部结构的俯视图。
具体实施方式
下面,基于附图对实施方式1所涉及的半导体模块进行说明。
此外,各附图中,相同标号表示相同或相当的结构。
实施方式1.
图1是表示实施方式1所涉及的半导体模块的电路图。半导体模块1至少内置有多个半导体开关元件T1~T4。图1示出驱动电动机2的H桥式电路,半导体模块1包括电动机2、正(+)电源3、接地4。图1中,圆形标记表示小信号用端子C1、C2、C3、C4、C5、C6,双圆形标记表示大电流用端子B1、B2、G1、G2、M1、M2。半导体开关元件T1~T4例如是场效应晶体管(Fieldeffect transistor:FET)。如图1所示,半导体模块1由4个FET构成桥式电路,电动机2与上下臂的中间连接位置即小信号用端子C5、小信号用端子C6、大电流用端子M1、大电流用端子M2相连接。
另外,小信号用端子C1、C2、C3、C4是FET的栅极驱动用控制信号端子,小信号用端子C5、C6是电动机2的电压监视端子。大电流用端子B1和大电流用端子B2与正(+)电源3相连接,大电流用端子G1、大电流用端子G2与接地4相连接。对电动机2的输出端子是大电流用端子M1、大电流用端子M2。
图2是表示实施方式1所涉及的半导体模块的内部结构的俯视图,将图1所示的电路结构作为半导体模块1a来形成。另外,图2表示半导体模块1a的未完成状态,用虚线表示模塑树脂20的外形,并表示通过树脂进行模塑之前的状态。框架10例如形成铜或铜合金的板状的基座10a,该基座10a上安装有半导体开关元件T1~T4。
具体而言,与大电流用端子B1一体形成的搭载部21安装有半导体开关元件T1。另外,与小信号用端子C6一体形成的搭载部21安装有半导体开关元件T2。根据实施方式1的半导体模块1a,在残留框架10的状态下进行半导体开关元件T1~T4的安装工序、半导体开关元件T1~T4与各布线的连接。另外,在作为外框的框架10的内侧,图中下侧排列有大电流用端子G1、B1、M1、M2、B2、G2,图中上侧依次排列有小信号用端子C2、C6、C1、C3、C5、C4。大电流用端子G1、B1、M1、M2、B2、G2以最大100A左右的程度进行通电。另外,小信号用端子以几mA以下的程度进行通电。
如图1所示,在H桥式电路的上下臂FET串联连接,并成对构成,因此图2中的配置也成为左右同样的配置即镜像配置。因此,对于配置、连接,仅对其一方来进行说明。
如图2所示,铜板基座10a从大电流用端子B1向半导体模块1a的内部延伸,作为半导体开关元件T1的FET安装于搭载部21。作为半导体开关元件T1的FET的栅极(未图示)通过引线键合连接有小信号用端子C1。铜板基座10a与作为半导体开关元件T1的FET的漏极(未图示)直接连接,另一方面,源极(未图示)通过跳线J1进行电布线。该跳线J1也与铜板基座10a同样以铜板状形成,不仅使大电流流过,导热性也优异。
跳线J1的一侧(图中下侧)与其他基座10a相连接,其连接到作为对电动机2的输出用端子的大电流用端子M1。另一侧(图中上侧)连接到作为下臂的半导体开关元件T2的FET的基座10a。作为半导体开关元件T2的FET也与作为半导体开关元件T1的FET相同,栅极通过引线键合连接到小信号用端子C2,源极经由跳线J2连接到作为接地布线的大电流用端子G1。
如上,实施方式1所涉及的半导体模块1a在配置半导体开关元件T1、T2、T3、T4、基座10a、跳线J1、J2等并进行了连接之后,在由虚线示出的模塑树脂20的外形位置通过树脂被模塑并密封。之后,沿图中单点划线的框架切断线100将不需要的框架10切断,从而完成半导体模块1a。
此处,半导体模块1a的图中左右两侧配置有由基座10a构成的接地布线即大电流用端子G1、G2,该基座10a即作为接地布线的大电流用端子G1、G2的一部分设置有宽幅部G10、G20。具体而言,宽幅部G10、G20形成于模塑树脂20的外周侧端部。该宽幅部G10、G20形成为比与流过作为接地布线的大电流用端子G1、G2的电流量相对应的布线宽度要宽的宽幅。大电流用端子G1、G2例如以最大100A左右的程度进行通电。即,宽幅部G10、G20比作为接地布线的大电流用端子G1、G2的宽度要宽,但由于与基座10a为同一材料,因此例如厚度与作为接地布线的大电流用端子G1、G2相同,仅宽度不同。该基座10a是铜板,通过该宽幅部G10、G20进行支承直到基座10a通过树脂进行模塑,因此能抑制基座10a的翘曲或歪斜等。
尤其是,由于安装作为半导体开关元件T1、T2的FET的工序、进行引线键合的工序、跳线J1、J2的安装工序,各基座10a的平面度有可能产生偏离。在实施方式1所涉及的半导体模块1a中,由于形成为利用各基座10a的多个腕部支承作为外框的框架10的构造,因此能抑制框架10的翘曲或歪斜。另外即使在模塑后切断不需要的框架时,由于形成为下述结构,即:在模塑树脂20的左右两端,作为金属板的宽幅部G10、G20以从模塑树脂20的外周侧端部朝向内部延伸的状态埋入并固定于模塑树脂20内部,因此上述宽幅部G10、G20也成为强化构件。
另外,宽幅部G10、G20的一部分形成为比模塑树脂20的外形要突出,起到进一步强化的效果。此外,宽幅部G10、G20中,电流流向图2所示的作为接地布线的大电流用端子G1、G2。宽幅部G10、G20成为向比作为半导体开关元件T2的FET的配置位置更靠图中上侧延伸的布线,以沿模塑树脂20的一边的方式延伸,因此成为抵抗框架10或模塑树脂20的翘曲或歪斜的构造。
如上所述,根据实施方式1所涉及的半导体模块1a,通过在半导体模块1a的基座10a的两端部即模塑树脂20的外周侧端部设置宽幅部G10、G20,从而从制造工序的最开始到完成后都能抑制模塑树脂20、基座10a的翘曲、歪斜。此外,通过扩大所需的布线的一部分的基座10a的宽度就能够实现而无需为了该强化追加其他构件,因此在成本上、工程上是有利的。
实施方式2.
图3是表示实施方式2所涉及的半导体模块的内部结构的俯视图。如图3所示,半导体模块1b的电路与图1相同,因此内置的半导体开关元件T1~T4、跳线J1、J2也相同。另外,半导体模块1b是成品,作为通过树脂进行模塑后的半导体模块1b的内部的透视图。在图中左右两端,在由基座10b构成的接地布线即大电流用端子G1、G2设置有宽幅部G11。在模塑树脂20的侧端部的中央部设置有半圆形的凹部11。因此,宽幅部G11也设置有相同的凹部11a。半导体模块1b因半导体开关元件T1~T4而发热,例如为了提高散热性需要利用其他散热用散热器从基座10b的背面(半导体开关元件的安装面和相反背面)来进行导热。在这样的情况下,需要使半导体模块1b密接于散热器(未图示),能使用该凹部11、11a来进行固定。在利用固定构件、例如螺钉进行紧固的情况下,该宽幅部G11起到强化的作用。此外,凹部11、凹部11a可以是孔部。
另外,如图3所示,宽幅部G11是与作为接地布线的大电流用端子G1、G2成为一体的布线。另外,宽幅部G11设置于与小信号用端子C2、C4或大电流用端子B1、B2相邻配置的接地布线。该宽幅部G11形成为从模塑树脂20的上下方向突出。该突出部分是与框架10(参照图2)的连接部分,因此由于形成为从模塑树脂20突出,从而进一步有助于防止框架10的翘曲或歪斜。另外,也在模塑树脂20的左右方向使宽幅部G11突出形成。根据实施方式2的半导体模块1b,通过在模塑树脂20的左右方向使宽幅部G11突出形成,从而具有进一步有助于提高散热性的效果。
如上所述,根据实施方式2所涉及的半导体模块1b,宽幅部G11设置凹部11a、或孔部,具有能容易地固定半导体模块1b的效果。进一步地,通过使宽幅部G11相比于模塑树脂20的外周更为突出来形成,从而能防止翘曲或歪斜,另外还能提高散热性。
实施方式3.
图4是表示实施方式3所涉及的半导体模块的内部结构的俯视图。如图4所示,实施方式3的半导体模块1c的电路是与图1相同的H桥式电路,半导体元件T1~T4、跳线J1、J2等也相同。在作为半导体模块1c的模塑树脂20的外周侧端部的左右两侧设置有布线12、13。该布线12、13是与基座10c相同的铜板,且宽幅部G12、G13分别与布线12、13成为一体来形成。布线12、13例如形成信号线或电源系统线,经由半导体模块1c起到用于与其他元器件连接的作用。因此,端子沿图中上下方向延伸来形成。根据实施方式3的半导体模块1c,由于在模塑树脂20的外周侧端部的两侧具备布线12、13,从而到从作为外框的框架10(参照图2)切断不需要的部分为止对框架10、模塑树脂20进行支承,因此防止到作为半导体模块1c的产品完成为止发生的框架10或模塑树脂20的翘曲或歪斜。因此,根据实施方式3所涉及的半导体模块1c,为了与框架10的连接配置有凸部14a、14b、14c、14d。
使用了这样的半导体模块1c的整体装置除了该半导体模块1c以外还具备元器件例如CPU、接口部等,能够用于经由该半导体模块1c将它们与电源系统或信号线相连接。即,图4的布线12、13中,在图中上下方向端子与其他桥式电路相同地延伸。若考虑与配置于半导体模块1c的周围的其他电子元器件的连接,则需要桥式电路以外的电布线,尤其是当在半导体模块1c的图中上下方向配置元器件时,通过利用该布线12、13从而能够削减外部布线的一部分。此外,宽幅部G12、G13左右成对配置,但也可以仅配置一个。
另外,也能够在桥式电路彼此之间配置宽幅部G12、G13。实施方式3中,可以是具有以半导体模块1c的内部相应的长度配置的宽幅部G12、G13的基座10c。另外,在具有该宽幅部G12、G13的基座10c是电源系统线的情况下,与小信号用端子(C1~C6)相邻排列的端子期望是比小信号用端子(C1~C6)要宽的端子。反之,在作为信号线来使用的情况下,与大电流用端子相邻排列的端子可以是比大电流用端子要细的端子。另外,也可以是从半导体模块1c的内部布线的一部分分支后的基座10c,在其一端具有端子的构造。无论哪种类型,只要半导体模块1c的内部比端子宽度要宽就能应用于各种各样的线。
根据实施方式3所涉及的半导体模块1c,通过具有宽幅部G12、G13的布线12、13,从而能防止模塑树脂20、基座10c的翘曲或歪斜。另外,该布线12、13没有安装发热元器件,通过使模塑树脂20的热经由该布线12、13导热,从而能提高散热性。另外,这样的宽幅部G12、G13不仅配置于半导体模块1c的两端,还能配置于中央。
虽然本申请记载了各种示例性实施方式和实施例,但是在一个或多个实施方式中记载的各种特征、方式和功能不限于特定实施方式的应用,可以单独地或以各种组合来应用于实施方式。
因此,可以认为未示例的无数变形例也包含在本申请说明书所公开的技术范围内。例如,假设包括对至少一个构成要素进行变形、添加或省略的情况,以及提取至少一个构成要素并与其他实施方式的构成要素进行组合的情况。
标号说明
1、1a、1b、1c 半导体模块,
2 电动机,
3 电源,
4 接地,
10 框架,
10a、10b、10c 基座,
11 凹部,
11a 凹部,
12、13 布线,
14a~14d 凸部,
20 模塑树脂,
21 搭载部,
100 框架切断线,
C1、C2、C3、C4、C5、C6 小信号用端子,
B1、B2、G1、G2、M1、M2 大电流用端子,
T1、T2、T3、T4 半导体开关元件
G10、G11、G12、G13、G20 宽幅部,
J1、J2 跳线。

Claims (7)

1.一种半导体模块,其特征在于,包括:
基座,该基座构成多个端子或布线;
半导体开关元件,该半导体开关元件安装于所述端子的搭载部;
模塑树脂,该模塑树脂对所述半导体开关元件进行密封,
所述模塑树脂的外周侧端部中,在所述端子或所述布线的一部分形成有具有比所述端子或所述布线要宽的宽度的宽幅部,
所述宽幅部以从所述模塑树脂的外周侧端部朝向内部延伸的状态,埋入并固定于所述模塑树脂的内部,作为强化构件,
并且所述宽幅部从所述模塑树脂的上下方向和左右方向突出地形成。
2.如权利要求1所述的半导体模块,其特征在于,
所述宽幅部形成为比与流过所述端子或所述布线的电流量相对应的布线宽度要宽。
3.如权利要求1所述的半导体模块,其特征在于,
在所述宽幅部和所述模塑树脂的一部分设置有凹部或孔部。
4.如权利要求2所述的半导体模块,其特征在于,
在所述宽幅部和所述模塑树脂的一部分设置有凹部或孔部。
5.如权利要求1至4中任一项所述的半导体模块,其特征在于,
多个所述端子是小信号用端子以及与所述小信号用端子相比通电有更大的电流的大电流用端子,所述宽幅部设置于与所述小信号用端子或所述大电流用端子相邻配置的接地布线。
6.如权利要求1至4中任一项所述的半导体模块,其特征在于,
所述宽幅部沿所述模塑树脂的一边延伸,并配置于所述模塑树脂的外周侧端部的两端部。
7.如权利要求5所述的半导体模块,其特征在于,
所述宽幅部沿所述模塑树脂的一边延伸,并配置于所述模塑树脂的外周侧端部的两端部。
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