CN106165280A - 模压模块 - Google Patents

模压模块 Download PDF

Info

Publication number
CN106165280A
CN106165280A CN201480077889.1A CN201480077889A CN106165280A CN 106165280 A CN106165280 A CN 106165280A CN 201480077889 A CN201480077889 A CN 201480077889A CN 106165280 A CN106165280 A CN 106165280A
Authority
CN
China
Prior art keywords
module
mold pressing
shape
lead frame
molded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201480077889.1A
Other languages
English (en)
Other versions
CN106165280B (zh
Inventor
冈上卓弘
谷川正明
竹内谦介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN106165280A publication Critical patent/CN106165280A/zh
Application granted granted Critical
Publication of CN106165280B publication Critical patent/CN106165280B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49568Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49548Cross section geometry
    • H01L23/49551Cross section geometry characterised by bent parts
    • H01L23/49555Cross section geometry characterised by bent parts the bent parts being the outer leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49562Geometry of the lead-frame for devices being provided for in H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49575Assemblies of semiconductor devices on lead frames
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/14Mounting supporting structure in casing or on frame or rack
    • H05K7/1422Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
    • H05K7/1427Housings
    • H05K7/1432Housings specially adapted for power drive units or power converters
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/14Mounting supporting structure in casing or on frame or rack
    • H05K7/1422Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
    • H05K7/1427Housings
    • H05K7/1432Housings specially adapted for power drive units or power converters
    • H05K7/14329Housings specially adapted for power drive units or power converters specially adapted for the configuration of power bus bars
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04034Bonding areas specifically adapted for strap connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/40247Connecting the strap to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73221Strap and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73263Layer and strap connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848Bonding techniques
    • H01L2224/84801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49589Capacitor integral with or on the leadframe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62Protection against overvoltage, e.g. fuses, shunts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02PCONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Inverter Devices (AREA)

Abstract

本发明可获得一种模压模块,其能够改善逆变器模块自身的搭载性和散热性能、以及关于模块形状应考虑的基板等周边搭载物的搭载性。本发明所述的模压模块是用于大功率通电和大功率控制的内置半导体元件的功率电子学用的模压模块,具备:至少1个以上半导体开关元件,被设置在模块内;以及引线框架,所述引线框架使开关元件散热,并且将搭载在模块中的元件与外部电路电连接,至少模块的一端被模压成型为曲线形状或多边形形状。

Description

模压模块
技术领域
本发明涉及一种用于大功率通电和大功率控制的内置半导体元件的功率电子学用的模压模块。
背景技术
马达、交流发电机等旋转电机领域的产品中,为了提高产品单位体积和单位重量的输出,满足高效化的市场要求,功率电子学正得到有效利用。此外,近年来,特别是存在一种利用机电一体结构加速产品小型化的动向。
具体而言,已知一种电动动力转向装置,所述电动动力转向装置具有如下结构,即由多个模压模块构成驱动马达的逆变器电路,将该模压模块以轴为中心呈放射状配置在设置于马达端部的由铝等导热性出色的原材料构成的框架上(例如参照专利文献1)。
根据该电动动力转向装置的结构,能够将控制大电流的逆变器电路高效、小型且紧密地与马达靠近配置,并且还能够合理地实现散热和模块固定。
此外,已提出一种逆变器模块,所述逆变器模块通过将模块形状设为梯形,使多个模块靠近,整体呈圆环状配置,从而提高安装效率(例如参照专利文献2)。
现有技术文献
专利文献
专利文献1:日本专利特开2011-239574号公报
专利文献2:日本专利特开2013-188027号公报
发明内容
发明要解决的技术问题
然而,过去技术存在以下问题。
马达、交流发电机等旋转电机的框架、机罩等旋转结构体的外形器为了实现旋转功能,通常以圆形为基本进行设计。因此,寻求紧密结构作为机电一体结构时,优选为逆变器电路等电气电子电路部的体积占有结构也以收纳到圆筒形内部空间的方式进行设计。即,各功能零部件其自身越接近圆筒形越能够高效地收纳到允许空间内。
此处,专利文献1的示例中,通过将共计4个的逆变器模块及电源模块以轴为中心在4个方向上呈放射状配置在呈与马达的轴垂直的平面且具有散热器功能的框架上,从而实现目的。然而,由于模块形状为矩形,因此接近圆盘形状的散热器平面中,会残留无法与模块接触的部分,站在有助于导热的有效面积的角度,是留有改善余地的设计。
此外,专利文献2的示例中,已提出一种梯形模块,根据说明图,已提出将9个模块在相同面内排列成圆环状。然而,采用类似通常广泛使用的三相马达单逆变器的简单结构时,即便采用了内置上下臂对的单位逆变器模块,也能够仅用3个模块构成逆变器电路。
因此,根据该提案,采用将3个梯形模块相对于马达的轴呈放射状排列的结构。此时,梯形的边残留,而不会沿着马达框架内径的圆弧,因此与矩形模块相比,模块配置到散热器平面的配置效率没有得到很大改善。
此外,产品的小型化设计中,通过使从模压模块中抽出的控制信号端子连接到基板的连接位置最佳化,从而使基板的有助于零部件安装的有效面积最大化很重要。
此处,专利文献1的示例中,模块的控制信号端子抽出位置被配置在矩形模块的马达轴侧(内周侧),且以包围马达的轴圆周的方式将端子排列配置,设置与基板连接的针位置。如此,通过将针呈直线状排列配置,从而基板中央部能够用于零部件安装的面积减少。
此外,专利文献2的示例中,控制信号端子被配置在外周侧。该结构中,如果为了与基板连接,而将从模块中抽出的控制信号端子沿模块以均匀的轴同样地进行弯曲,则成为作为在基板的端部呈直线状排列的端子进行连接的方式,因此基板的外周部被多边形的连接端子配置区域包围。因此,原本期待使用圆形基板及其零部件安装面作为旋转电机的机罩,但是结果却无法有效地利用最外周部。
本发明为解决上述问题开发而成,其目的在于得到一种模压模块,其能够改善逆变器模块自身的搭载性和散热性能、以及关于模块形状应考虑的基板等周边搭载物的搭载性。
解决技术问题所采用的技术方案
本发明所述的模压模块是用于大功率通电和大功率控制的内置半导体元件的功率电子学用的模压模块,其中,具备:至少1个以上半导体开关元件,所述半导体开关元件被设置在模块内;以及引线框架,所述引线框架使开关元件散热,并且将搭载在模块中的元件与外部电路电连接,至少模块的一端被模压成型为曲线形状或多边形形状。
发明效果
根据本发明所述的模压模块,具备:至少1个以上半导体开关元件,所述半导体开关元件被设置在模块内;以及引线框架,所述引线框架使开关元件散热,并且将搭载在模块中的元件与外部电路电连接,至少模块的一端被模压成型为曲线形状或多边形形状。
因此,能够改善逆变器模块自身的搭载性和散热性能、以及关于模块形状应考虑的基板等周边搭载物的搭载性。
附图说明
图1(a)、(b)是表示本发明实施方式1所述的模压模块的结构图。
图2是表示内置在图1所示的模压模块中的电路的电路图。
图3是表示搭载本发明实施方式1所述的模压模块的机电一体结构马达的控制器(ECU)部分的结构图。
图4是将搭载本发明实施方式1所述的模压模块的机电一体结构马达的整体结构展开表示的结构图。
图5是表示运用本发明实施方式1所述的模压模块的电动动力转向装置的方块结构图。
图6是表示本发明实施方式2所述的模压模块中的信号端子的弯曲结构的结构图。
图7是表示本发明实施方式3所述的模压模块的外形形状的结构图。
图8是表示本发明实施方式4所述的模压模块的绝缘结构的结构图。
具体实施方式
以下使用附图对本发明所述的模压模块的优选实施方式进行说明。另外,本发明所述的模压模块被用作与马达、交流发电机等旋转电机组合的电源电路,运用在考虑利用机电一体结构小型、紧密且高效地构成产品功能而使用的功率电子学电路中,特别是内置有半导体开关元件。
实施方式1.
图1(a)、(b)是表示本发明实施方式1所述的模压模块的结构图。图1(a)、(b)中,为了构成电路功能,模压模块内内置对大电流通电进行通电控制所需的半导体开关元件101(MOSFET)、电流检测用的分流电阻器102、以及抗噪用的电容器103。
此外,在对这些搭载元件之间进行连接而构成电路的同时,为了使搭载元件产生的热量向外部散热,而设置有用于将各元件之间分离的由加工成岛状的铜或铜合金等构成且具有高导电性和高导热性的引线框架104。
此外,使用焊料或导电性浆料将引线框架104与元件之间以电连接和机械连接的方式连接安装,并且,作为与元件上表面的电极的电连接,通过利用线夹引线105的焊料安装或者引线接合106与其他岛、其他元件进行连接,在模块内对元件进行安装。
进而,为了防止搭载在引线框架104上的元件、连接结构的机械变形,实现绝缘防湿保护,而利用树脂108对引线框架104上的元件安装面进行模压成型,进行作为模块的装配。
此处,引线端子抽出部107所在的端部通过利用树脂108的模压成型将应保护的模块内部电路与外界隔开,但是将引线框架104上的各元件搭载岛的布局适当排列,且将端子的抽出位置沿引线框架岛的端部排列。其结果,模块成型部109的特征在于,为了能够沿旋转电机的内周高效率地配置,而形成曲面状或多边形。
图2是表示内置(构成)在图1所示的模压模块中的电路的电路图。图2中,在由树脂模压件208保护的引线框架204上,搭载构成电路的一套电子零部件,即MOSFET201、分流电阻202、以及电容器203。
各零部件进而经由线夹引线205、引线接合206的连接单元与引线框架204连接。引线框架204被抽出到树脂模压件外部连接端子207,整体上逆变器电路和逆变器的相切断开关功能被集成到1个封装中。
用于对各MOSFET201进行控制且对逆变器相电流进行检测的信号端子被集中抽出到一边209侧,即图1的模块成型部109侧,实现与控制电路的连接。
图3是表示搭载本发明实施方式1所述的模压模块的机电一体结构马达的控制器(ECU)部分的结构图。另外,此处,表示逆变器控制单元的结构的一例。
图3中,该逆变器单元具备用于无刷DC驱动马达的三相逆变器驱动电路,是利用与马达的同轴一体结构形成作为紧密电源组模块的结构体的设计。
为了实现该同轴一体结构,收纳逆变器控制单元的机罩302在中央部具有贯穿孔,保持用于支撑马达输出轴的轴承的同时,具有同轴上排列旋转角传感器(解角器)的形状,所述旋转角传感器根据与安装在输出轴的转子的磁耦合强度成正比的电气信号检测马达的电角度。
此外,该机罩302由于需要对模压模块301的逆变器开关动作时的热损失具有作为散热器的功能,因此利用兼具高散热性和上述机械刚性的铝压铸合金等原材料制作而成。
模压模块301利用由树脂成型而成的框架Assy303的旋塞以插入方式固定在机罩302。此时,为了保持模压模块301的散热面与散热器之间的导热和电绝缘,而夹有散热片和润滑脂等。
此外,框架Assy303设有对模压模块301供给电源的汇电杆305,通过连接器Assy304从外部受电。
此处,汇电杆305上与模压模块301一起连接有用于防止随着模压模块301的逆变器动作而产生的开关噪声泄漏到外部的线圈、以及用于使电源供给稳定化的纹波电容器,形成逆变器动作时的大电流的供给路径。
此外,模压模块301的信号针经由设在框架Assy303上的贯穿孔与控制基板306连接。此时,来自连接器Assy304的信号连接器部的信号针也与控制基板306连接。
通过如此排列,模压模块301沿马达等旋转电机的轴呈放射状排列,在靠近轴的内周部抽出电源、GND端子,便于与环上的汇电杆305连接。该大电流的电源供给路径能够构成最短的回路,实现功率损失的降低、以及开关噪声的降低。另一方面,通过将逆变器端子抽出配置在相对的模压成型为曲线形状或多边形形状的模压件外周部,对连接到旋转电机的绕组实现最佳配置。
图4是将搭载本发明实施方式1所述的模压模块的机电一体结构马达的整体结构展开表示的结构图。另外,此处,表示将马达部装配到图3的逆变器单元而作为电源组模块完成的示例。
图4中,为了向马达401供电,从模压模块402抽出的输出端子412与框架Assy403、以及固定在控制基板404的外罩405上的中继端子406焊接,经由中继端子406与从马达401侧抽出的端子407压接,从而实现相互的电连接。
此处,绕在铁芯上的马达401的绕组被压入马达框架408,而且马达框架408的端部410的内部保持有转子轴409的受侧的轴承。与马达401的绕组发生作用的永磁体411被固定在轴上,转子利用由逆变器模块供给的驱动电流而产生旋转扭矩。
如此,通过使用本发明实施方式1所述的模压模块,能够在同轴形状的有限空间内高效地构成逆变器电路,紧密地构成机电一体同轴结构的电源组模块。
此外,作为电源组模块501的具体运用例,为降低汽车的方向盘转向力而用于安装到轮向齿轮上使用的电动动力转向装置时的包括外部接口在内的电气功能方块图如图5所示。
图5中,电源组模块501具备:转换器部,所述转换器部由马达502、以及检测马达502的旋转电角度的旋转角传感器503构成;框架Assy部508,所述框架Assy部508通过汇电杆将模压模块(电源模块504、继电器模块505、电容器506、线圈507)连接,构成主电路;以及控制基板512,所述控制基板512搭载用于控制主电路动作的微型计算机509、传感器等接口电路510、对主电路进行驱动的PWM预驱动器511等。
此外,电源组模块501的电源从车辆的电池513获得电源,经由连接器端子514引向框架Assy508的汇电杆。控制基板上的电源电路515通过电池电源与点火装置开关信号负责切断基板内部电源的供给,通过开始基板内部电源的供给,从而微处理器单元(MPU)启动。
该电动动力转向装置中,系统启动时,MPU对各接口电路510、主电路进行初期检查,如果没有异常,则对整个电路通电,处于可动作状态。
然后,MPU经由扭矩传感器IF周期性获取驾驶员的方向盘转向力的检测值,同时通过通信接口获取车速、转向角度等信息,从而运算并更新马达应产生的扭矩值,即方向盘辅助扭矩。根据该值决定马达通电目标电流。
此外,MPU根据经由旋转角传感器503、旋转角信号IF510获取的马达电角度,决定马达绕组各相的驱动DUTY,向PWM预驱动器511输出各相的逆变器驱动DUTY信号。电源模块504通过预驱动器电路被驱动,主电路进行逆变器动作。其结果,马达各端子的平均电压基于与来自MPU的指示相应的PWM调制电压。
此处,马达电流根据马达的端子之间的PWM平均电压差决定,各相的马达电流值由电流检测用的分流电阻器检测,经由电流检测信号增幅器516,使用MPU经过A/D转换单元获取,从而根据马达通电目标电流对马达电流进行反馈控制。其结果,能够使马达产生与扭矩传感器检测到的转向扭矩、车速、转向角度等车辆行为相应的最佳辅助扭矩,实现作为动力转向的动作。
如以上所述,根据实施方式1,具备:至少1个以上半导体开关元件,所述半导体开关元件被设置在模块内;以及引线框架,所述引线框架使开关元件散热,并且将搭载在模块中的元件与外部电路电连接,至少模块的一端被模压成型为曲线形状或多边形形状。
因此,能够改善逆变器模块自身的搭载性和散热性能、以及关于模块形状应考虑的基板等周边搭载物的搭载性。
具体而言,本发明实施方式1所述的模压模块是被收纳到圆筒形或近似圆筒形的旋转电机的外形器内,在与旋转电机的轴垂直的面上从轴部呈放射状排列的功率电子学用的模压模块,其中,该模块内具有具备以下零部件的结构:至少1个以上半导体开关元件;以及引线框架,所述引线框架实现该开关元件的散热功能、以及使外部电路与元件电连接而动作的功能,至少模块的一端为了沿旋转电机机罩端部的圆周形状内被高效地收纳,以通过曲线形状或多边形形状的模压成型形成模压件外周部的方式构成。
通过如此的结构,实现模块形状的最佳化,其结果,能够利用逆变器装置的小型化来实现产品形状的小型最佳化,并有助于提高电气性能。特别是,通过采用使模块外形与沿旋转电机的框架内径能够安装的最大外形相称的曲线或多边形外形,从而能够增大模块与散热器的散热面积,能够降低接触面的热阻,并改善散热性能。
此外,沿旋转电机的内周配置的各模压模块中,采用如下结构:将电源、GND端子抽出配置在靠近旋转电机的轴的内周部,将逆变器端子抽出配置在与旋转电机相对的模块被模压成型为曲线形状或多边形形状的模压件外周部。此外,采用如下结构:在模块内内置进行互补逆变器动作的至少1对开关元件。
通过如此的结构,对逆变器的电源供给经由配置在旋转电机轴附近而构成的最短路径的母线回路执行,并且将模块的输出端子配置在与旋转电机的线圈的连接位置靠近的部位,其结果,与旋转电机的线圈的连接也变得最短,能够在电气方面和结构方面进行最佳接线。
实施方式2.
关于从模压模块的被模压成型为曲线形状或多边形形状的模压件外周部抽出电连接所需的端子之事,为了改善安装到设备上的安装效率,以沿着曲线或多边形的外周形状的方式构成端子的弯曲位置具有效果。
以下,参照图6,对实现如此的结构的方法进行说明。图6是表示本发明实施方式2所述的模压模块中的信号端子的弯曲结构的结构图。
图6中,首先,以模压模块平面内设定的轴110为基准,设定与该轴正交的线111、112、113、114、115、116。接着,沿这些线111~116,将各端子117、118、119、120、121、122、123、124折弯。
其结果,构成各端子的母材沿轴110的方向准备所需的端子长度,用模具打穿,从而能够构成。因此,将模压件外周形状设为例如曲面、多边形的安装性良好的形状,能够实现连接端子紧密地抽出成沿着外周形状的形状,并且端子构件的排样效率也不恶化的设计。
如以上所述,根据实施方式2,以如下方式构成,即模压模块具有从被模压成型为曲线形状或多边形形状的模压件外周部抽出的多个电极端子,各电极端子的折弯点的弯曲处理沿着与模块平面内事先设定的轴分别正交的线执行,被折弯的各电极端子的顶端部被用于与外部电路连接。
通过如此的结构,关于将连接端子从模块向控制模块的电子电路基板抽出并弯曲之事,能够在模块外周以最大基板有效面积沿着旋转电机的壁面变大的方式进行配置,能够有助于扩大零部件搭载到基板上的零部件搭载面积。
实施方式3.
模压模块的配置面中,为了提高包括其他零部件在内的安装效率,可以在不参与模压模块的电极抽出的侧面增加凹陷。以下,参照图7,对实现如此的结构的方法进行说明。图7是表示本发明实施方式3所述的模压模块的外形形状的结构图。
图7中,在与模压模块701的被模压成型为曲线形状或多边形形状的端子抽出部702相邻的边703设置多边形状或曲线状的凹陷704。如此,作为控制器排列模块时得到的缝隙的空间中能够收纳其他零部件,例如电容器。
通过将模压模块701设计成如此的形状,从而用于抑制例如随着模压模块701的开关动作而产生的电源系统的电压、电流的脉动的电容器705能够实现最佳配置。电容器705为了抑制向逆变器给电的电源电压纹波,尽可能地与模压模块靠近配置具有效果,通过采用该形状的模压模块701,从而能够达成该目的。
如以上所述,根据实施方式3,模块与被模压成型为曲线形状或多边形形状的模压件外周部相邻的至少1条边朝向模块的内侧形成有曲线状或多边形状的凹陷。
本发明实施方式3所述的模压模块的尺寸已考虑到外周部呈曲线或多边形形状且沿着旋转电机的内周能够搭载的最大外形,相对于此,模块的内周部以为了沿着旋转电机的轴而由与外周相比较短的边构成的大致扇形形状为前提。
如此,通过在模块侧面增加凹陷,以能够在形成于模块侧面的缝隙中配置周边元件、或结构物的方式构成,从而作为组装模块的机电一体产品能够实现高密度的逆变器电路的安装配置。
实施方式4.
上述实施方式1中,为了对模压模块与散热器之间进行散热和绝缘,而提出夹入散热片和润滑脂来组装,但是散热片也可以与引线框架紧贴而用树脂一体成型。
此处,作为散热片例如能够利用由如下部分构成的散热片:环氧树脂类的绝缘层,所述环氧树脂类的绝缘层填充有具有导热性的无机填充物;以及铜箔片,所述铜箔片保持所述环氧树脂类的绝缘层,且将热量传递到散热器平面。如果将该片材的树脂面与模压模块的引线框架紧贴而一体成型,则环氧树脂面能够与引线框架粘合而发挥出兼具导热和绝缘的功能。
图8是表示本发明实施方式4所述的模压模块的绝缘结构的结构图。另外,此处,表示将绝缘片一体成型在模压模块内的剖视图。图8中,在搭载元件且进行过锡焊的引线框架801的背面,即在与散热器接触的散热面侧粘贴绝缘片802的绝缘层侧后,用环氧树脂803对引线框架801进行模压处理。
由于能够将原材料制作成任意形状,因此绝缘片802以覆盖模块散热面整个面的方式设计即可。此外,绝缘片的外周端部利用环氧树脂804以横跨引线框架的端子之间的形状与表面侧的树脂一体成型,以压住绝缘片802的方式形成。
其结果,可获得防止绝缘片802从引线框架801上卷起、剥落的功能。此时,散热面呈在外周部形成环氧树脂的墙的形状,因此采用将散热器侧的接触面按压到模块散热面上的突起结构,从而能够便于模块的定位。
如此完成的模压模块由于能够在散热面与散热器接触的整个面上叠加绝缘片802而成型,因而导热有效地发挥作用,并且散热片802在模块的阶段已经完成,因此能够便于装配到逆变器模块上,便于产品制造。
如以上所述,根据实施方式4,以用树脂一体成型的方式构成模压模块的引线框架、以及具有导热和绝缘的功能的散热片。
此处,散热片的形状加工性良好,因而即使将模块的外形形状设计成曲线或多边形等任意形状,也易于根据散热片的形状进行加工而与引线框架一体成型。因此,对模块安装部(散热器)的绝缘、散热的功能得以维持,通过确保模块的形状设计自由度,从而能够以高密度将模块安装到产品上。

Claims (5)

1.一种模压模块,其是用于大功率通电和大功率控制的内置半导体元件的功率电子学用的模压模块,其特征在于,
具备:
至少1个以上半导体开关元件,所述半导体开关元件被设置在模块内;以及
引线框架,所述引线框架使所述开关元件散热,并且将搭载在所述模块中的元件与外部电路电连接,
至少所述模块的一端被模压成型为曲线形状或多边形形状。
2.权利要求1所述的模压模块,其特征在于,
所述模块具有从被模压成型为曲线形状或多边形形状的模压件外周部抽出的多个电极端子,
各电极端子的折弯点的弯曲处理沿着与模块平面内事先设定的轴分别正交的线执行,
被折弯的所述各电极端子的顶端部被用于与所述外部电路连接。
3.如权利要求1或2所述的模压模块,其特征在于,
在所述模块的、与所述模块被模压成型为曲线形状或多边形形状后得到的模压件外周部相邻的至少1条边上,形成有朝向所述模块的内侧的、曲线状或多边形状的凹陷。
4.如权利要求1至3中任一项所述的模压模块,其特征在于,
用树脂将所述引线框架、以及具有导热和绝缘的功能的散热片一体成型。
5.如权利要求1至4中任一项所述的模压模块,其特征在于,
将电源、GND端子抽出配置在旋转电机的靠近轴的内周部,
将逆变器端子抽出配置在与所述旋转电机相对的、所述模块被模压成型为曲线形状或多边形形状后得到的模压件外周部,
在所述模块内内置进行互补逆变器动作的至少1对开关元件。
CN201480077889.1A 2014-04-08 2014-04-08 模压模块 Expired - Fee Related CN106165280B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2014/060175 WO2015155831A1 (ja) 2014-04-08 2014-04-08 モールドモジュール

Publications (2)

Publication Number Publication Date
CN106165280A true CN106165280A (zh) 2016-11-23
CN106165280B CN106165280B (zh) 2018-12-14

Family

ID=54287434

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480077889.1A Expired - Fee Related CN106165280B (zh) 2014-04-08 2014-04-08 模压模块

Country Status (5)

Country Link
US (1) US10629521B2 (zh)
JP (1) JP6312170B2 (zh)
CN (1) CN106165280B (zh)
DE (1) DE112014006573T5 (zh)
WO (1) WO2015155831A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112514058A (zh) * 2018-08-02 2021-03-16 三菱电机株式会社 半导体模块

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6760203B2 (ja) * 2017-06-05 2020-09-23 株式会社オートネットワーク技術研究所 リレーユニット

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101185226A (zh) * 2005-05-31 2008-05-21 法雷奥电机设备公司 用于旋转电气设备的电子部件组件
JP2011151977A (ja) * 2010-01-22 2011-08-04 Denso Corp 車両用回転電機
CN103229295A (zh) * 2010-11-29 2013-07-31 丰田自动车株式会社 动力模块
CN103325759A (zh) * 2011-02-14 2013-09-25 三菱电机株式会社 半导体模块
CN103987611A (zh) * 2012-01-25 2014-08-13 三菱电机株式会社 电动动力转向装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101253626B (zh) * 2005-08-31 2010-09-29 三洋电机株式会社 电路装置及其制造方法
JP5039171B2 (ja) * 2010-05-11 2012-10-03 三菱電機株式会社 電動式駆動装置およびその電動式駆動装置を搭載した電動式パワーステアリング装置
TW201251140A (en) * 2011-01-31 2012-12-16 Cree Inc High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion
WO2012137760A1 (ja) * 2011-04-04 2012-10-11 ローム株式会社 半導体装置および半導体装置の製造方法
JP5518108B2 (ja) * 2012-01-25 2014-06-11 三菱電機株式会社 電動パワーステアリング装置
JP5888010B2 (ja) 2012-03-08 2016-03-16 日産自動車株式会社 インバータモジュール
CN104272454A (zh) * 2012-05-17 2015-01-07 三菱电机株式会社 半导体模块以及半导体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101185226A (zh) * 2005-05-31 2008-05-21 法雷奥电机设备公司 用于旋转电气设备的电子部件组件
JP2011151977A (ja) * 2010-01-22 2011-08-04 Denso Corp 車両用回転電機
CN103229295A (zh) * 2010-11-29 2013-07-31 丰田自动车株式会社 动力模块
CN103325759A (zh) * 2011-02-14 2013-09-25 三菱电机株式会社 半导体模块
CN103987611A (zh) * 2012-01-25 2014-08-13 三菱电机株式会社 电动动力转向装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112514058A (zh) * 2018-08-02 2021-03-16 三菱电机株式会社 半导体模块
CN112514058B (zh) * 2018-08-02 2024-04-09 三菱电机株式会社 半导体模块

Also Published As

Publication number Publication date
US10629521B2 (en) 2020-04-21
CN106165280B (zh) 2018-12-14
US20160351479A1 (en) 2016-12-01
JP6312170B2 (ja) 2018-04-18
DE112014006573T5 (de) 2017-02-16
WO2015155831A1 (ja) 2015-10-15
JPWO2015155831A1 (ja) 2017-04-13

Similar Documents

Publication Publication Date Title
CN102812623B (zh) 电动式驱动装置和具有该电动式驱动装置的电动式动力转向装置
CN104724162B (zh) 电动动力转向用的马达驱动装置
US9123693B2 (en) Mold module utilized as power unit of electric power steering apparatus and electric power steering apparatus
CN107529347B (zh) 电动助力转向装置
EP2637285B1 (en) Electric power steering power module and electric power steering drive control device employing same
JP5946962B2 (ja) 電力変換装置
JP6138358B2 (ja) 電動パワーステアリング装置
US9338925B2 (en) Device for controlling drive of motor for electric power steering device
EP3220521B1 (en) Control unit and electric power steering device using same
CN103155369B (zh) 控制装置一体型旋转电机
CN105406652A (zh) 电力转换装置
CN102810532B (zh) 半导体装置和包括半导体装置的驱动设备
JP2008174097A (ja) 電動式パワーステアリング装置
CN106458249A (zh) 一体型电动助力转向装置及其制造方法
US9293970B2 (en) Control device and motor unit including the control device
JP5837176B1 (ja) 制御装置一体型回転電機
CN106165280B (zh) 模压模块
JP6874627B2 (ja) 電動圧縮機用インバータモジュール
JP5791750B1 (ja) 制御装置一体型回転電機
JP2017207038A (ja) 電動圧縮機

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20181214