JP7019822B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP7019822B2 JP7019822B2 JP2020533983A JP2020533983A JP7019822B2 JP 7019822 B2 JP7019822 B2 JP 7019822B2 JP 2020533983 A JP2020533983 A JP 2020533983A JP 2020533983 A JP2020533983 A JP 2020533983A JP 7019822 B2 JP7019822 B2 JP 7019822B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor module
- mold resin
- terminal
- wiring
- wide portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 94
- 239000011347 resin Substances 0.000 claims description 46
- 229920005989 resin Polymers 0.000 claims description 46
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 230000003014 reinforcing effect Effects 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000000465 moulding Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04034—Bonding areas specifically adapted for strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inverter Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
しかしながら、前述した特許文献1に開示された半導体モジュールにおいては、半導体スイッチング素子を銅板に装着する工程、ワイヤボンディング処理をした後に樹脂によりモールドを行う工程、最後に不要な外周フレームおよびそれぞれに接続されている不要部分をカットする工程により完成するため、各工程において銅板にストレスがかかることにより、平面度を確保することが困難であり、銅板の反りまたは歪みを防止することが困難であるという課題があった。
なお、各図面中において、同一符号は同一あるいは相当のものであることを示す。
図1は、実施の形態1による半導体モジュールを示す回路図である。半導体モジュール1は、複数の半導体スイッチング素子T1~T4を少なくとも内蔵している。図1は、モータ2を駆動するHブリッジ回路を示しており、半導体モジュール1は、モータ2、プラス(+)電源3、グランド4を備えている。図1において、丸印は、小信号用端子C1、C2、C3、C4、C5、C6を示しており、二重丸印は大電流用端子B1、B2、G1、G2、M1、M2を示している。半導体スイッチング素子T1~T4は、例えば電界効果トランジスタ(Field effect transistor:FET)である。図1に示すように、半導体モジュール1は4個のFETによりブリッジ回路を構成し、上下アームの中間接続位置である小信号用端子C5、小信号用端子C6、大電流用端子M1、大電流用端子M2にはモータ2が接続される。
図2は、実施の形態1による半導体モジュールの内部構成を示す平面図であり、図1に示した回路構成を半導体モジュール1aとして形成したものである。また、図2は半導体モジュール1aの未完成状態を示しており、モールド樹脂20の外形を破線で示し、樹脂によりモールドを行う前の状態を示している。フレーム10は、例えば銅または銅合金の板状のベース10aをなしており、このベース10aの上に半導体スイッチング素子T1~T4が装着される。
図2に示すように、大電流用端子B1から銅板のベース10aは、半導体モジュール1aの内部へ伸びており、半導体スイッチング素子T1であるFETが搭載部21に装着されている。半導体スイッチング素子T1であるFETのゲート(図示なし)には、ワイヤボンドにより小信号用端子C1が接続されている。銅板のベース10aは、半導体スイッチング素子T1であるFETのドレイン(図示なし)と直接接続され、一方ソース(図示なし)はジャンパ線J1により電気的に配線されている。このジャンパ線J1も銅板のベース10aと同様に銅板状で形成され大電流を流すのみならず、伝熱性にも優れている。
以上のように、実施の形態1による半導体モジュール1aは、半導体スイッチング素子T1、T2、T3、T4、ベース10a、ジャンパ線J1、J2等々を配置して接続した後、破線で示したモールド樹脂20の外形の位置で樹脂によりモールドされて封止される。その後、不要なフレーム10を図中一点鎖線のフレーム切断線100に沿って切断し、半導体モジュール1aが完成する。
図3は、実施の形態2による半導体モジュールの内部構成を示す平面図である。図3に示すように、半導体モジュール1bにおける回路は、図1と同一であるので、内蔵された半導体スイッチング素子T1~T4、ジャンパ線J1、J2も同一である。また半導体モジュール1bは完成品であり、樹脂によりモールドされた半導体モジュール1bの内部の透視図としている。図中左右両端には、ベース10bから構成されたグランド配線である大電流用端子G1、G2に幅広部G11が設けられている。モールド樹脂20の側端部の中央部には、半円形の凹部11が設けられている。そのため、幅広部G11にも同等な凹部11aを設けている。半導体モジュール1bは、半導体スイッチング素子T1~T4により発熱があり、例えば放熱性向上のためベース10bの裏面(半導体スイッチング素子の装着面と逆の裏面)から放熱用ヒートシンク他で伝熱させる必要がある。このような場合、半導体モジュール1bをヒートシンク(図示せず)に密着させる必要があり、この凹部11、11aを用いて固定することが可能である。固定部材、例えばネジ締めを行う場合にこの幅広部G11が補強の役目を担うことになる。なお、凹部11、凹部11aは穴部であってもよい。
以上のように、実施の形態2による半導体モジュール1bによれば、幅広部G11に凹部11a、又は穴部を設け、半導体モジュール1bの固定を容易にできる効果がある。さらに、モールド樹脂20の外周よりも幅広部G11を突出して形成することにより、反りまたは歪みの防止となり、また放熱性を向上させることも可能となる。
図4は、実施の形態3による半導体モジュールの内部構成を示す平面図である。図4に示すように、実施の形態3の半導体モジュール1cの回路は図1と同一のHブリッジ回路であり、半導体スイッチング素子T1~T4、ジャンパ線J1、J2等も同一である。半導体モジュール1cのモールド樹脂20の外周側端部である左右両側には、配線12、13が設置されている。この配線12、13は、ベース10cと同様の銅板であり、かつ幅広部G12、G13が配線12、13とそれぞれ一体となって形成されている。配線12、13は、例えば、信号ラインまたは電源系ラインをなしており、半導体モジュール1cを介して他の部品と接続するための役割をなしている。そのため、図中上下方向に端子が延在されて形成されている。実施の形態3の半導体モジュール1cによれば、モールド樹脂20の外周側端部の両側に配線12、13を備えたことで、外枠であるフレーム10(図2参照)から不要部分を切断するまでフレーム10、モールド樹脂20を支持しているので、半導体モジュール1cとして製品が完成するまでのフレーム10またはモールド樹脂20の反りまたは歪みの防止となる。そのため、実施の形態3による半導体モジュール1cによれば、フレーム10との接続のために凸部14a、14b、14c、14dが配置されている。
従って、例示されていない無数の変形例が、本願明細書に開示される技術の範囲内において想定される。例えば、少なくとも1つの構成要素を変形する場合、追加する場合または省略する場合、さらには、少なくとも1つの構成要素を抽出し、他の実施の形態の構成要素と組み合わせる場合が含まれるものとする。
Claims (5)
- 複数の端子または配線を構成しているベースと、
前記端子の搭載部に装着された半導体スイッチング素子と、
前記半導体スイッチング素子を封止するモールド樹脂と、を備え、
前記モールド樹脂の外周側端部には、前記端子または前記配線の一部に前記端子または前記配線よりも大きい幅を有し、補強部材となる幅広部が形成されており、
前記幅広部は、前記モールド樹脂の外周側端部から内部へ向かって延在した状態で前記モールド樹脂の内部に埋め込まれて固定されていると共に、前記モールド樹脂の外形側面および上下方向から突出して形成されていることを特徴とする半導体モジュール。 - 前記幅広部は、前記端子または前記配線に流れる電流量に対応した配線幅よりも広く形成されたことを特徴とする請求項1に記載の半導体モジュール。
- 前記幅広部および前記モールド樹脂の一部に凹部または穴部を設けたことを特徴とする請求項1または請求項2に記載の半導体モジュール。
- 前記複数の端子は、小信号用端子と前記小信号用端子よりも大きい電流を通電する大電流用端子であり、前記幅広部は、前記小信号用端子または前記大電流用端子と隣接して配置されたグランド配線に設けられたことを特徴する請求項1から請求項3のいずれか1項に記載の半導体モジュール。
- 前記幅広部は、前記モールド樹脂の一辺に沿って延在しており、前記モールド樹脂の外周側端部の両端部に配置されたことを特徴とする請求項1から請求項4のいずれか1項に記載の半導体モジュール。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2018/028968 WO2020026397A1 (ja) | 2018-08-02 | 2018-08-02 | 半導体モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020026397A1 JPWO2020026397A1 (ja) | 2021-04-30 |
JP7019822B2 true JP7019822B2 (ja) | 2022-02-15 |
Family
ID=69231647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020533983A Active JP7019822B2 (ja) | 2018-08-02 | 2018-08-02 | 半導体モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US11410911B2 (ja) |
EP (1) | EP3832715A4 (ja) |
JP (1) | JP7019822B2 (ja) |
CN (1) | CN112514058B (ja) |
WO (1) | WO2020026397A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011250490A (ja) | 2010-05-21 | 2011-12-08 | Denso Corp | 半導体モジュール、および、それを用いた駆動装置 |
JP2011250491A (ja) | 2010-05-21 | 2011-12-08 | Denso Corp | 半導体モジュール、および、それを用いた駆動装置 |
JP2015095486A (ja) | 2013-11-08 | 2015-05-18 | アイシン精機株式会社 | 半導体装置 |
JP2017188517A (ja) | 2016-04-04 | 2017-10-12 | 三菱電機株式会社 | 電力半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4073559B2 (ja) * | 1998-10-30 | 2008-04-09 | 三菱電機株式会社 | 半導体装置 |
JP2008078324A (ja) * | 2006-09-20 | 2008-04-03 | Yamaha Corp | 表面実装型半導体パッケージ及びその製造方法 |
JP2009253153A (ja) * | 2008-04-09 | 2009-10-29 | Asmo Co Ltd | 樹脂封止型半導体装置 |
JP4567773B2 (ja) * | 2008-07-18 | 2010-10-20 | 三菱電機株式会社 | 電力用半導体装置 |
CN105706233B (zh) * | 2013-11-05 | 2018-11-09 | 三菱电机株式会社 | 半导体模块 |
US10043738B2 (en) * | 2014-01-24 | 2018-08-07 | Silergy Semiconductor Technology (Hangzhou) Ltd | Integrated package assembly for switching regulator |
US10629521B2 (en) * | 2014-04-08 | 2020-04-21 | Mitsubishi Electric Corporation | Molded module |
JP2016004792A (ja) * | 2014-06-13 | 2016-01-12 | パナソニックIpマネジメント株式会社 | 半導体装置とその製造方法および機器 |
-
2018
- 2018-08-02 EP EP18928157.9A patent/EP3832715A4/en active Pending
- 2018-08-02 US US17/048,677 patent/US11410911B2/en active Active
- 2018-08-02 JP JP2020533983A patent/JP7019822B2/ja active Active
- 2018-08-02 CN CN201880096090.5A patent/CN112514058B/zh active Active
- 2018-08-02 WO PCT/JP2018/028968 patent/WO2020026397A1/ja unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011250490A (ja) | 2010-05-21 | 2011-12-08 | Denso Corp | 半導体モジュール、および、それを用いた駆動装置 |
JP2011250491A (ja) | 2010-05-21 | 2011-12-08 | Denso Corp | 半導体モジュール、および、それを用いた駆動装置 |
JP2015095486A (ja) | 2013-11-08 | 2015-05-18 | アイシン精機株式会社 | 半導体装置 |
JP2017188517A (ja) | 2016-04-04 | 2017-10-12 | 三菱電機株式会社 | 電力半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US20210151362A1 (en) | 2021-05-20 |
US11410911B2 (en) | 2022-08-09 |
WO2020026397A1 (ja) | 2020-02-06 |
JPWO2020026397A1 (ja) | 2021-04-30 |
EP3832715A4 (en) | 2021-08-18 |
CN112514058B (zh) | 2024-04-09 |
EP3832715A1 (en) | 2021-06-09 |
CN112514058A (zh) | 2021-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5253455B2 (ja) | パワー半導体装置 | |
KR101149298B1 (ko) | 4개의 모스펫 풀 브릿지 모듈 | |
US9472538B2 (en) | Semiconductor device manufacturing method and semiconductor device | |
JP4829690B2 (ja) | 半導体装置 | |
US8802502B2 (en) | TSOP with impedance control | |
JP4878520B2 (ja) | 半導体装置 | |
JP6020379B2 (ja) | 半導体装置 | |
JP2009278772A (ja) | インバータモジュール | |
JP2007329428A (ja) | 半導体装置 | |
US20130285235A1 (en) | Semiconductor device | |
JP2013507760A (ja) | 自動車のための電力モジュール | |
WO2013118275A1 (ja) | 半導体装置 | |
JP4820233B2 (ja) | 半導体装置 | |
JP7019822B2 (ja) | 半導体モジュール | |
JP5490276B2 (ja) | パワー半導体装置 | |
WO2018109820A1 (ja) | 電子モジュール | |
JP6827401B2 (ja) | パワー半導体モジュールの製造方法およびパワー半導体モジュール | |
KR20220129587A (ko) | 파워 모듈 패키지 및 패키징 기술들 | |
JP6819394B2 (ja) | 半導体装置 | |
JP2010177453A (ja) | 半導体装置 | |
JP7046200B2 (ja) | 半導体モジュール | |
JP2020155532A (ja) | 半導体装置の製造方法および半導体装置 | |
US20180218959A1 (en) | Semiconductor device | |
JP2011108946A (ja) | トランジスタの実装方法及び電子部品 | |
JP2016213917A (ja) | 半導体モジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20201005 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211116 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211210 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220105 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220202 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 7019822 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |