JP2013507760A - 自動車のための電力モジュール - Google Patents
自動車のための電力モジュール Download PDFInfo
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- JP2013507760A JP2013507760A JP2012532653A JP2012532653A JP2013507760A JP 2013507760 A JP2013507760 A JP 2013507760A JP 2012532653 A JP2012532653 A JP 2012532653A JP 2012532653 A JP2012532653 A JP 2012532653A JP 2013507760 A JP2013507760 A JP 2013507760A
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Abstract
Description
−電子素子の全て、または電子素子の中の少なくとも1つは、ダイオードまたはトランジスタから選択される。
−各ウェハの第2の面は、少なくとも1つのコネクタを備え、モジュールは、少なくとも1つの接続要素を備え、この接続要素は、1つのウェハの電子素子またはコネクタを、他のウェハの電子素子またはコネクタに接続している。従って、両方の半導体ウェハの上には、単一の回路が構成され、これにより、種々の素子が半導体ウェハにわたって分散され、熱放散を好適にすることができる。
−接続要素の全て、または、接続要素の中の少なくとも1つは、リボンケーブルで構成されている。このリボンケーブルは、電力接続のために使用され、これにより、種々の素子の間の電力の伝送を好適に行うことができる。特に、リボンケーブルは、交互に反対のアーチを描くように波状に作られており、第1のタイプのアーチの少なくとも1つのピークは、ウェハのうちの1つの第2の面に電気的に接続され、第2のタイプのアーチの少なくとも1つのピークは、他のウェハの第2の面に電気的に接続されている。これにより、コネクタの間、および/または電子素子の間の行路長を最短にすることができ、これにより、リボンケーブルの中を流れる電流による熱損失を抑制することができる。
−各ウェハは、ウェハの少なくとも2つの反対側の端、およびスペース支持要素を備えており、モジュールは、スペース支持要素が接触して、ウェハの第2の面の間のスペースを維持するように構成されている。これにより、モジュールの設計が容易になり、2つの面の間に維持されているスペースによって、電子素子および接続要素を、容易にウェハの上に挿入をすることができる。さらに、スペース支持要素によって、ウェハの間に形成されるスペースの厚さは、精度よく制御することができ、ウェハの間の距離が小さいことにより生ずるモジュールの過熱を防ぐことができる。
−スペース支持要素は、ウェハを互いに固定するための手段を備えている。例えば、相補的形状をして密着しあう表面を備えている。このような手段によって、2つのウェハは、互いに適合した位置に設置することが容易になり、モジュールの組み立て工程が簡単になる。従って、モジュールの製造コストを低減することができる。これらの手段によって、相補的に密着する表面を構成することができるので有利である。その理由は、ここで使用するような設置手段は、製作がそれほど高価ではないからである。
−ウェハの中の少なくとも1つは、プラスチック材料で作られたフレームを有する。このフレームは、スペース支持要素を備えていることが望ましい。これにより、モジュールは、コンパクトになり、電子素子を密着させることができ、このプラスチックフレームによって、外部から加えられる可能性がある力に対して保護することができる。
−モジュールはまた、スペース支持要素、および/またはフレームを固定するための手段を備えることもできる。これらの手段は、ねじによる固定手段であってもよく、従って、フレームまたはスペース支持要素には、固定ねじを挿入するための孔が設けられる。
−2つの半導体ウェハを備えるモジュールにおいて、少なくとも1つの電子素子を、各ウェハの1つの面(接続面と呼ぶ)に設ける。
−ウェハを、2つの接続面が互いに対向して位置するように重ね合せる。
−少なくとも1つの接続要素(リボンケーブルであることが望ましい)を、ウェハのうちの1つの接続面の上に設置する。
−ウェハを重ね合わせて、接続要素が、ウェハの第2の面の少なくとも1つのコネクタ、またはこの第2の面の上に配置された電子素子を、もう一方のウェハの第2の面のコネクタ、またはこの第2の面の上に配置された電子素子に電気的に接続する。
Claims (10)
- 車両、特に電気走行車両のための電力モジュール(10)であって、
前記電力モジュールは、2つの重ね合わせられた半導体ウェハ(12、14)を備え、各ウェハは、熱放散基板(24、26)に接続されるように設計された第1の面(20、22)と、少なくとも1つの電子素子(38a〜44b)が配置されている、前記第1の面と別個の第2の面(28、30)とを備え、前記モジュールは、前記ウェハの第2の面が互いに対向して配置されるように構成されていることを特徴とする電力モジュール。 - 各ウェハの前記第2の面は、少なくとも1つのコネクタ(32、34、36、37)を備え、前記モジュールは、電子素子(38a〜44b)を接続するための少なくとも1つの接続要素(46、48)、または電子素子に対する、前記ウェハのうちの一方のコネクタ、または前記ウェハのうちの他方のコネクタを備えていることを特徴とする、請求項1に記載の電力モジュール。
- 前記接続要素の中の全て、または少なくとも1つは、リボンケーブル(46)によって構成されていることを特徴とする、請求項1または2に記載の電力モジュール。
- リボンケーブル(46)は、交互に反対のアーチを描くように波状に作られ、第1のタイプのアーチの少なくとも1つのピークは、一方のウェハ(12)の第2の面(28)に電気的に接続され、第2のタイプのアーチの少なくとも1つのピークは、他方のウェハ(14)の第2の面(30)に電気的に接続されていることを特徴とする、請求項1〜3のいずれか1項に記載の電力モジュール。
- 各ウェハは、少なくとも2つの反対側の端に、スペース支持要素(16、18)を備え、前記モジュールは、前記スペース支持要素が互いに接触して、前記ウェハの前記第2の面の間に、スペース(17)が保持されるように構成されていることを特徴とする、請求項1〜4のいずれか1項に記載の電力モジュール。
- 前記スペース支持要素は、前記ウェハを互いにロックするための手段を備え、特に、相補的な形状を有する密着面(13、15)を備えていることを特徴とする、請求項1〜5のいずれか1項に記載の電力モジュール。
- 前記ウェハの中の少なくとも1つは、フレーム(16、18)を有し、このフレームは、望ましくは、前記スペース支持要素を備えていることを特徴とする、請求項1〜6のいずれか1項に記載の電力モジュール。
- 請求項1〜7のいずれか1項に記載の電力モジュールのアセンブリーと、2つの熱放散基板(24、26)のアセンブリーであって、前記基板のそれぞれは、前記ウェハのうちの1つの前記第1の面に電気的に接続され、前記ウェハのうちの1つの前記第1の面に直接に接触していることを特徴とするアセンブリー。
- 電力モジュール(10)を組み立てるための方法であって、
−前記モジュールは、2つの半導体ウェハ(12、14)を備え、少なくとも1つの電子素子(38a〜44b)を、前記ウェハのそれぞれの、接続面(28、30)と呼ばれる1つの面の上に配置する操作と、
−ウェハ(12、14)を、前記接続面が互いに対向して配置されるように重ね合わせる操作とを有することを特徴とする方法。 - 少なくとも1つの接続要素であるリボンケーブル(46)は、ウェハ(12、14)のうちの1つの接続面(28、30)の上に配置され、ウェハ(12、14)は、重ね合わされて、前記接続要素は、前記ウェハの前記接続面の少なくとも1つのコネクタ(32、34、36)、または前記面の上に配置された電子素子(38a−44b)を、他方のウェハの前記接続面のコネクタ、または前記面の上に配置された電子素子に電気的に接続するようになっていることを特徴とする、請求項9に記載の方法。
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FR0957000A FR2951019B1 (fr) | 2009-10-07 | 2009-10-07 | Module de puissance pour vehicule automobile |
FR0957000 | 2009-10-07 | ||
PCT/FR2010/052115 WO2011042667A1 (fr) | 2009-10-07 | 2010-10-07 | Module de puissance pour vehicule automobile |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US9030822B2 (en) | 2011-08-15 | 2015-05-12 | Lear Corporation | Power module cooling system |
US8971041B2 (en) | 2012-03-29 | 2015-03-03 | Lear Corporation | Coldplate for use with an inverter in an electric vehicle (EV) or a hybrid-electric vehicle (HEV) |
ITMO20120321A1 (it) * | 2012-12-21 | 2014-06-22 | Meta System Spa | Procedimento per la realizzazione e l'assemblaggio di schede elettroniche e dispositivo elettronico cosi' ottenibile |
US9362040B2 (en) | 2014-05-15 | 2016-06-07 | Lear Corporation | Coldplate with integrated electrical components for cooling thereof |
US9615490B2 (en) | 2014-05-15 | 2017-04-04 | Lear Corporation | Coldplate with integrated DC link capacitor for cooling thereof |
US10099574B2 (en) | 2015-04-15 | 2018-10-16 | Ford Global Technologies, Llc | Vehicle power module assemblies |
FR3074011B1 (fr) * | 2017-11-21 | 2019-12-20 | Safran Electronics & Defense | Module electrique de puissance |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04207060A (ja) * | 1990-11-30 | 1992-07-29 | Fujitsu Ltd | 半導体装置 |
JPH0590482A (ja) * | 1991-09-26 | 1993-04-09 | Toshiba Corp | 半導体装置およびその製造方法 |
US20070153491A1 (en) * | 2006-01-02 | 2007-07-05 | Young-Min Lee | Electronic circuit package |
US20080165517A1 (en) * | 2007-01-05 | 2008-07-10 | Wang Erik L | Multiple circuit board arrangements in electronic devices |
JP2009525593A (ja) * | 2006-01-30 | 2009-07-09 | バレオ・エチユード・エレクトロニク | 電子モジュールとこのようなモジュールの組立方法 |
JP2009534822A (ja) * | 2006-04-19 | 2009-09-24 | オスラム ゲゼルシャフト ミット ベシュレンクテル ハフツング | 電子素子モジュール |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5199164A (en) * | 1991-03-30 | 1993-04-06 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor package |
US5714802A (en) * | 1991-06-18 | 1998-02-03 | Micron Technology, Inc. | High-density electronic module |
US5731633A (en) * | 1992-09-16 | 1998-03-24 | Gary W. Hamilton | Thin multichip module |
FR2765067B1 (fr) * | 1997-06-19 | 1999-07-16 | Alsthom Cge Alcatel | Module d'electronique de puissance et un dispositif d'electronique de puissance pourvu de tels modules |
JP2002026251A (ja) * | 2000-07-11 | 2002-01-25 | Toshiba Corp | 半導体装置 |
DE10039770A1 (de) * | 2000-08-16 | 2002-02-28 | Bosch Gmbh Robert | Kühlvorrichtung |
KR100389920B1 (ko) * | 2000-12-12 | 2003-07-04 | 삼성전자주식회사 | 열팽창에 의한 신뢰성 저하를 개선할 수 있는 반도체 모듈 |
KR100380107B1 (ko) * | 2001-04-30 | 2003-04-11 | 삼성전자주식회사 | 발열체를 갖는 회로 기판과 기밀 밀봉부를 갖는 멀티 칩패키지 |
TW200302685A (en) * | 2002-01-23 | 2003-08-01 | Matsushita Electric Ind Co Ltd | Circuit component built-in module and method of manufacturing the same |
DE10231219C1 (de) | 2002-07-11 | 2003-05-22 | Semikron Elektronik Gmbh | Druckkontaktiertes Halbleiterrelais |
JP3847676B2 (ja) * | 2002-07-15 | 2006-11-22 | 三菱電機株式会社 | パワー半導体装置 |
US7616452B2 (en) * | 2004-09-03 | 2009-11-10 | Entorian Technologies, Lp | Flex circuit constructions for high capacity circuit module systems and methods |
US7443023B2 (en) * | 2004-09-03 | 2008-10-28 | Entorian Technologies, Lp | High capacity thin module system |
US7606050B2 (en) * | 2004-09-03 | 2009-10-20 | Entorian Technologies, Lp | Compact module system and method |
US7446410B2 (en) * | 2004-09-03 | 2008-11-04 | Entorian Technologies, Lp | Circuit module with thermal casing systems |
US7727816B2 (en) * | 2006-07-21 | 2010-06-01 | Stats Chippac Ltd. | Integrated circuit package system with offset stacked die |
US20080105963A1 (en) * | 2006-07-28 | 2008-05-08 | Tessera, Inc. | Stackable electronic device assembly |
DE102006056363B4 (de) * | 2006-11-29 | 2010-12-09 | Infineon Technologies Ag | Halbleitermodul mit mindestens zwei Substraten und Verfahren zur Herstellung eines Halbleitermoduls mit zwei Substraten |
US7911792B2 (en) * | 2008-03-11 | 2011-03-22 | Ford Global Technologies Llc | Direct dipping cooled power module and packaging |
US8328435B2 (en) * | 2008-05-20 | 2012-12-11 | Finisar Corporation | Printed circuit board positioning spacers in an optoelectronic module |
US8202012B2 (en) * | 2008-07-31 | 2012-06-19 | Hewlett-Packard Development Company, L.P. | Electro-optical connector and methods for aligning |
US8351794B2 (en) * | 2009-03-10 | 2013-01-08 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Parallel optical transceiver module having a heat dissipation system that dissipates heat and protects components of the module from particulates and handling |
KR101798918B1 (ko) * | 2011-03-25 | 2017-11-17 | 엘지전자 주식회사 | 인쇄회로기판 어셈블리, 이의 제조 방법 및 이를 구비하는 이동 단말기 |
-
2009
- 2009-10-07 FR FR0957000A patent/FR2951019B1/fr not_active Expired - Fee Related
-
2010
- 2010-10-07 CN CN201080055495.8A patent/CN102648520B/zh not_active Expired - Fee Related
- 2010-10-07 JP JP2012532653A patent/JP5643937B2/ja not_active Expired - Fee Related
- 2010-10-07 WO PCT/FR2010/052115 patent/WO2011042667A1/fr active Application Filing
- 2010-10-07 US US13/498,919 patent/US8916963B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04207060A (ja) * | 1990-11-30 | 1992-07-29 | Fujitsu Ltd | 半導体装置 |
JPH0590482A (ja) * | 1991-09-26 | 1993-04-09 | Toshiba Corp | 半導体装置およびその製造方法 |
US20070153491A1 (en) * | 2006-01-02 | 2007-07-05 | Young-Min Lee | Electronic circuit package |
JP2009525593A (ja) * | 2006-01-30 | 2009-07-09 | バレオ・エチユード・エレクトロニク | 電子モジュールとこのようなモジュールの組立方法 |
JP2009534822A (ja) * | 2006-04-19 | 2009-09-24 | オスラム ゲゼルシャフト ミット ベシュレンクテル ハフツング | 電子素子モジュール |
US20080165517A1 (en) * | 2007-01-05 | 2008-07-10 | Wang Erik L | Multiple circuit board arrangements in electronic devices |
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US20120235290A1 (en) | 2012-09-20 |
FR2951019A1 (fr) | 2011-04-08 |
JP5643937B2 (ja) | 2014-12-24 |
CN102648520B (zh) | 2015-05-20 |
WO2011042667A1 (fr) | 2011-04-14 |
US8916963B2 (en) | 2014-12-23 |
FR2951019B1 (fr) | 2012-06-08 |
CN102648520A (zh) | 2012-08-22 |
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