JP2014053449A - 半導体装置、半導体装置の製造方法 - Google Patents
半導体装置、半導体装置の製造方法 Download PDFInfo
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
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Abstract
【解決手段】絶縁基板12と、該絶縁基板に固定された半導体チップ30と、該半導体チップに電気的に接続された第1制御基板50と、該第1制御基板から見て該絶縁基板と反対側に配置された第2制御基板52と、該第1制御基板と該第2制御基板の間の電気信号の伝送に用いられる、該第1制御基板と該第2制御基板を電気的に接続する制御基板間ワイヤ62と、を備える。
【選択図】図1
Description
図1は、本発明の実施の形態1に係る半導体装置の断面図である。本発明の実施の形態1に係る半導体装置10は絶縁基板12を備えている。絶縁基板12は表面に導体の配線パターンを形成できる絶縁材料で形成されている。絶縁基板12の表面側には配線パターン14、16、18が形成されている。絶縁基板12の裏面側には配線パターン20が形成されている。配線パターン16には例えばはんだにより半導体チップ30が固定されている。これにより、半導体チップ30は配線パターン16を介して絶縁基板12に固定されている。
本発明の実施の形態2に係る半導体装置と半導体装置の製造方法は、実施の形態1との共通点が多いので実施の形態1との相違点を中心に説明する。図6は、本発明の実施の形態2に係る半導体装置の断面図である。
本発明の実施の形態3に係る半導体装置と半導体装置の製造方法は、実施の形態1との共通点が多いので実施の形態1との相違点を中心に説明する。図7は、本発明の実施の形態3に係る半導体装置の断面図である。
Claims (5)
- 絶縁基板と、
前記絶縁基板に固定された半導体チップと、
前記半導体チップに電気的に接続された第1制御基板と、
前記第1制御基板から見て前記絶縁基板と反対側に配置された第2制御基板と、
前記第1制御基板と前記第2制御基板の間の電気信号の伝送に用いられる、前記第1制御基板と前記第2制御基板を電気的に接続する制御基板間ワイヤと、を備えたことを特徴とする半導体装置。 - 前記絶縁基板上に形成された配線パターンと、
前記半導体チップと前記配線パターンを電気的に接続する配線用ワイヤと、
前記配線パターンと前記第1制御基板を電気的に接続する接続用ワイヤと、を備えたことを特徴とする請求項1に記載の半導体装置。 - 前記絶縁基板、前記第1制御基板、及び前記第2制御基板を収容するケースと、
前記ケースに固定され、金属で形成された中継端子と、
前記半導体チップと前記中継端子を電気的に接続する中継端子配線用ワイヤと、
前記中継端子と前記第1制御基板を電気的に接続する中継端子接続用ワイヤと、を備えたことを特徴とする請求項1に記載の半導体装置。 - 前記半導体チップと前記第1制御基板を電気的に接続する直接接続ワイヤを備えたことを特徴とする請求項1に記載の半導体装置。
- 第1制御基板と、第2制御基板と、半導体チップが固定された絶縁基板とを平面的に並べる工程と、
前記第1制御基板、前記第2制御基板、及び前記絶縁基板が平面的に並んだ状態で、 前記第1制御基板、前記第2制御基板、及び前記半導体チップを電気的に接続するために、前記第1制御基板、前記第2制御基板、及び前記半導体チップにワイヤボンディングを施すワイヤボンディング工程と、
前記ワイヤボンディング工程後に、前記第1制御基板、前記第2制御基板、及び前記絶縁基板をケースに収容する工程と、を備えたことを特徴とする半導体装置の製造方法。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016031052A1 (ja) * | 2014-08-29 | 2016-03-03 | 三菱電機株式会社 | 半導体装置及び多相用半導体装置 |
JP2017046529A (ja) * | 2015-08-28 | 2017-03-02 | 三菱電機株式会社 | 半導体装置、インテリジェントパワーモジュールおよび電力変換装置 |
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JPH09283883A (ja) * | 1996-04-15 | 1997-10-31 | Matsushita Electric Ind Co Ltd | パワー制御装置 |
JP2002261417A (ja) * | 2001-03-02 | 2002-09-13 | Denso Corp | 混成集積回路装置 |
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JP2004031590A (ja) * | 2002-06-25 | 2004-01-29 | Hitachi Unisia Automotive Ltd | 半導体装置 |
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JP2006165409A (ja) * | 2004-12-10 | 2006-06-22 | Hitachi Ltd | 電力変換装置 |
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FR2536624A1 (fr) * | 1982-11-24 | 1984-05-25 | Sev Alternateurs | Procede d'implantation d'un circuit electrique et/ou electronique a l'interieur d'un boitier, circuit et boitier obtenus par le procede |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016031052A1 (ja) * | 2014-08-29 | 2016-03-03 | 三菱電機株式会社 | 半導体装置及び多相用半導体装置 |
JPWO2016031052A1 (ja) * | 2014-08-29 | 2017-04-27 | 三菱電機株式会社 | 半導体装置及び多相用半導体装置 |
CN106663676A (zh) * | 2014-08-29 | 2017-05-10 | 三菱电机株式会社 | 半导体装置以及多相用半导体装置 |
CN106663676B (zh) * | 2014-08-29 | 2019-05-28 | 三菱电机株式会社 | 半导体装置以及多相用半导体装置 |
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JP2017046529A (ja) * | 2015-08-28 | 2017-03-02 | 三菱電機株式会社 | 半導体装置、インテリジェントパワーモジュールおよび電力変換装置 |
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