CN1828888A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

Info

Publication number
CN1828888A
CN1828888A CNA2006100595582A CN200610059558A CN1828888A CN 1828888 A CN1828888 A CN 1828888A CN A2006100595582 A CNA2006100595582 A CN A2006100595582A CN 200610059558 A CN200610059558 A CN 200610059558A CN 1828888 A CN1828888 A CN 1828888A
Authority
CN
China
Prior art keywords
electrode
wiring portion
connection electrode
electrode wiring
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2006100595582A
Other languages
English (en)
Other versions
CN100521192C (zh
Inventor
高桥英树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1828888A publication Critical patent/CN1828888A/zh
Application granted granted Critical
Publication of CN100521192C publication Critical patent/CN100521192C/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • E—FIXED CONSTRUCTIONS
    • E03—WATER SUPPLY; SEWERAGE
    • E03C—DOMESTIC PLUMBING INSTALLATIONS FOR FRESH WATER OR WASTE WATER; SINKS
    • E03C1/00—Domestic plumbing installations for fresh water or waste water; Sinks
    • E03C1/02—Plumbing installations for fresh water
    • E03C1/021—Devices for positioning or connecting of water supply lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/3701—Shape
    • H01L2224/37011—Shape comprising apertures or cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H01L2224/37599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4007—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Water Supply & Treatment (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Hydrology & Water Resources (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inverter Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

本发明提供功率半导体元件的芯片尺寸并非由铝导线直径尺寸决定的半导体装置。本发明中，IGBT(1)的发射极上第一和第二连接电极彼此相对地分离并形成，在二极管(2)的阳电极上也彼此相对地分离并形成第一和第二连接电极。从引出电极(4)的一方侧面部(4SP1)向内侧弯曲形成第一电极布线部(5A)，从另一方侧面部(4SP2)与第一电极布线部(5A)相对地分离并形成第二电极布线部(5B)。在与(IGBT1)相对的位置上的第一和第二电极布线部(5A、5B)分别仅与第一和第二连接电极焊接，同样，在与二极管(2)相对的位置上的第一和第二电极布线部(5A、5B)也分别仅与第一和第二连接电极焊接。

Description

半导体装置及其制造方法
技术领域
本发明涉及功率半导体元件与该功率半导体元件上的电流引出电极的连接。
背景技术
在驱动电动机等电力电子学中，因额定电压300V以上区域的特性，而使用IGBT作为开关元件，而且使用与开关元件并联的回流用续流二极管。
换流器电路是直流和交流的变换机，由作为开关元件的IGBT和续流二极管构成，各自使用4或6个IGBT和续流二极管，进行电动机控制。换流器电路通过直流端子连接到直流电源、使IGBT开关来将直流电压变换为交流电压，并向负载即电动机供电。
各有6个IGBT和续流二极管的换流器电路产品，在同一衬底上配置6个以一个IGBT和一个续流二极管为一对的元件。而且，这6对元件形成于框体内部，框体上形成外部集电极、外部发射极、外部栅电极。用铝导线连接这些外部电极与IGBT和续流二极管这一对元件。
专利文献1：特开平9-172136号公报
专利文献2：特开2002-43508号公报
专利文献3：特开2004-228461号公报
发明内容
随着IGBT特性的提高及IGBT芯片的小型化，现在IGBT芯片尺寸小至十年前尺寸的1/2～1/4以下。另一方面，在换流器电路的产品阶段，由于用铝导线互相连接IGBT和二极管，如上所述，IGBT芯片尺寸变小时，须减小打入铝导线的芯片表面区域的面积。但是，由于通过铝导线的电流值有限制(该值已确定)，最近发生与上述芯片尺寸小型化倾向相反的由铝导线直径尺寸决定芯片尺寸的问题。
而且，由于从芯片顶部侧直接将铝导线连接到芯片，存在难以从芯片顶部散热的问题。
另外，因为芯片和铝导线的接触面积决定热循环(H/C)的寿命，所以现在的产品无法满足日益增加的最近H/C寿命要求。
本发明鉴于上述技术状况构思而成，其目的在于提供功率半导体元件芯片尺寸不受铝导线直径尺寸限制，可应对功率半导体元件芯片尺寸的小型化，并且在制造上有各种优点的半导体装置。
本发明的半导体装置，其特征在于包括：设有分别形成于表面及背面上的第一和第二主电极的功率半导体元件；与所述功率半导体元件的所述第二主电极电连接的金属片；在所述第一主电极上彼此相对地分离形成的第一和第二连接电极；以及具备从其一方侧面部朝下方形成的第一电极布线部和从与所述一方侧面部相对的另一方侧面部朝下方、与所述第一电极布线部相对地与所述第一电极布线部分离并形成的第二电极布线部的引出电极，所述第一电极布线部仅与所述第一连接电极电连接，而所述第二电极布线部仅与所述第二连接电极电连接。
下面通过附图详细说明本发明主题的各式各样具体表现及其效果和优点。
依据本发明的主题能够提供可应对功率半导体元件的芯片尺寸小型化的半导体装置。
附图说明
图1是本发明实施例1的半导体装置的结构示图。
图2是实施例1的引出电极的结构示图。
图3是表示实施例1的IGBT和续流二极管搭载于背面金属片上的状态的平面图。
图4是放大表示实施例1的IGBT的表面结构的平面图。
图5是示意表示实施例1的IGBT的连接电极的结构的平面图。
图6是示意表示实施例1的二极管的连接电极的结构的平面图。
图7是表示本发明实施例2的半导体装置制造工序的纵剖视图。
图8是表示本发明实施例2的半导体装置制造工序的纵剖视图。
图9是表示本发明实施例2的半导体装置制造工序的纵剖视图。
(符号说明)
1IGBT，2二极管，3背面金属片，4引出电极，5、5A、5B电极布线部，6、7、8、9焊料，10、11连接电极，12温度读出器。
具体实施方式
实施例1
本实施例的特点是，响应引出布线(与下述电极布线部相当)的分割，也分割功率半导体元件的表面电极(第一主电极)上的连接电极，使已分割的引出布线和与之对应的已分割的连接电极相对并电连接。下面基于附图详细说明换流器电路的IGBT和二极管这一对元件的上述特点。
图1是表示本实施例的一例半导体装置的结构的前视图(A)和其侧视图(B)。另外，图2是表示顶部侧引出电极4的结构的前视图(A)、仰视图(B)及侧视图(C)。且，图3是表示相当于底面电极的背面金属片3上搭载的功率半导体元件即IGBT1和二极管2的俯视图。图1和图3中的符号D1表示第一方向，符号D2表示与第一方向D1正交的第二方向。还有，图4是放大表示图3的IGBT1顶面结构的俯视图。
如图1所示，IGBT1的集电极(第二主电极)1PE2和二极管2的阴电极(第二主电极)2PE2，各自通过焊料6、7在背面金属片3表面上电连接。
如图3及图4所示，在其上必须形成第一主电极的IGBT1表面的周围，与普通IGBT同样，形成与栅极焊盘连接的栅极布线GL，在该表面形成分割区域DR包围该栅极布线GL。还有，第一主电极未在该分割区域DR内形成。即，发射极(第一主电极)1PE1设在被分割区域DR包围的内侧的IGBT1表面上。特别是，发射极1PE1因IGBT1表面中央沿第二方向D2延伸的分割区域DR1的存在而在第一方向D1上下分割为两部分。即，发射极1PE1被分割为顶部侧的发射极1PE1A和底部侧的发射极1PE1B。还有，因在分割区域DR内存在沿第一方向D1梳齿状延伸的6根分割区域DR2而顶部侧发射极1PE1A成为沿第二方向D2略4分割的状态，同样地，底部侧发射极1PE1B也成为沿第二方向D2正好4分割的状态。还有，在发射极1PE1的各分割部分上形成连接电极10。即，在顶部侧发射极1PE1A的各分割部分上形成的连接电极10即第一连接电极10A，隔着分割区域DR1，与底部侧发射极1PE1B的对应分割部分上形成的连接电极10即第二连接电极10B相对。换句话说，第一连接电极10A和与之相对的第二连接电极10B均沿第一方向D1形成，且在第二方向D2被分割。与下述连接电极11同样，这些连接电极10是其最表面形成有Au的金属，通过这种结构可进行与同电极10焊接。
还有，在把发射极1PE1分割为顶部侧发射极1PE1A和底部侧发射极1PE1B两部分的分割区域DR1的大致中央部分，设有监测IGBT芯片温度的温度读出器12。图4中符号12L1、12L2是温度读出器12的输入用及输出用布线。
还有，若不设温度读出器12，则没必要设置分割区域DR1。即，这种情况下，发射极1PE1不会分割为上下两部分。
同样，如图3所示，在二极管2表面形成的阳电极(相当于第一主电极)2PE1上，第一和第二连接金属11A、11B沿第一方向D1彼此相对地分割并形成(方便起见将两者11A、11B统称为连接电极11)。
另一方面，设有沿第二方向D2延伸且相对地被分割的电极布线部5的引出电极4与电极布线部5用一个金属体一体形成。引出电极4的结构如下。如图1及图2所示，在第二方向D2延伸的、引出电极4的一方侧面部(第一侧面部)4SP1开始形成有向下延伸且其纵剖面形状大致呈L字形向内侧弯曲的第一电极布线部(称为第一引出布线)5A。而且，从与第一侧面部4SP1相对的引出电极4的另一方侧面(第二侧面部)4SP2开始也形成有向下延伸且与第一电极布线部5A的尖端部相对，并且其纵剖面形状同样大致呈L字形向内侧弯曲的第二电极布线部(称为第二引出布线)5B。即，引出电极4设有沿第二方向D2彼此相对地分割的第一和第二电极布线部5A、5B。而且，彼此相对的第一和第二电极布线部5A、5B各对位置与IGBT1的彼此相对的第一和第二连接电极10A、10B各对位置的关系相对。因此，4对彼此相对的第一和第二电极布线部5A、5B分别与4对彼此相对的第一和第二连接电极10A、10B内对应的部分在位置关系上相对。二极管2也有这种位置关系的相对性。如图1及图3所示，连接二极管2用的、引出电极4上的第一和第二电极布线部5A、5B一对与在二极管2侧彼此相对的第一和第二连接电极11A、11B一对在位置关系上相对。
这样，伴随电极布线部5A、5B的分割、与该分割对应的连接电极10A、10B(11A、11B)的分割以及上述位置关系的相对性，通过仅焊接第一和第二电极布线部5A、5B，IGBT1的发射极1PE1和二极管2的阳电极2PE1经由第一引出布线5A与连接电极10A(11A)的接合及第二引出布线5B与连接电极10B(11B)的接合电连接到引出电极4。即，第一电极布线部5A的各底部(大致平坦面)5AB通过焊料8(9)仅与相对的第一连接电极10A(11A)电连接，而第2电极布线部5B的各底部(大致平坦面)5BB通过焊料8(9)仅与相对的第二连接电极10B(11B)电连接。从而，不需要用以连接IGBT1的发射极1PE1与二极管2的阳电极2PE1的铝导线。
如上述那样形成的半导体装置用树脂等封装，换流器电路中的开关元件和续流二极管组成一对。使用多个这样的一对元件，形成最终产品换流器电路。
<第一优点>
在本实施例中，第一主电极上形成的连接电极10、11各自相对地分割，且引出电极4的电极布线部5也相对地分割，而且第一连接电极10A、11A的位置与对应的第一电极布线部5A的位置相对，同时第二连接电极10B、11B的位置与对应的第二电极布线部5B的位置相对，因此在制造上有便于确定焊接引出布线5和IGBT1及二极管2时的位置的优点。
<第二优点>
还有，因为本实施例中使连接电极10、11相对地沿第二方向D2分割，所以通过调整焊接各连接电极10A、10B、11A、11B的焊料量，其制造上有容易使焊料8、9厚度均匀的优点。这是由于连接电极面积越大，越难控制面与面之间焊料厚度的均一性。换句话说，芯片越大，越容易在芯片中形成焊料池。
关于本优点虽然只说明了在同时形成IGBT1和二极管2时的情况，但在单独形成IGBT或二极管时的场合也同样得到该优点。
<第三优点>
而且，在图1的结构中，将IGBT1和二极管2沿第二方向D2并列配置在背面金属片3上，且使两者1、2沿其顶部的引出电极4延伸方向D2并列配置，同时在引出电极4的侧面中、与IGBT1和二极管2的顶部相当的部分开始，同样分别向内侧弯曲形成电极布线部5(5A、5B)。此外，引出电极4和电极布线部5(5A、5B)为一体。通过利用这样的引出电极4，采用第一工序(位置相对的电极布线部5和对应的连接电极10、11的焊接工序)，将由引出电极4和电极布线部5组成的顶面侧引线框体与IGBT1及二极管2的被分割的连接电极10、11电连接。如此，与各自单独形成IGBT及二极管的连接端子的场合相比，其顶部侧引线框体的形成变得简单。
<第四优点>
如上所述，温度读出器在与位于IGBT1顶部的引出电极4平行地延伸的分割区域DR1内形成。从而能够监测IGBT芯片端以外部位的温度。特别是，由于温度读出器12设于IGBT1表面中央即分割区域DR1的中央部内，可监测温度最高的IGBT芯片中央的温度。
如图1及图4所示，IGBT1上有与引出电极4或引出布线5平行的分割区域DR1，所以如图5所示，无论沿第二方向D2(横向)有多少个分离的发射极1PE1或连接电极10，都能将温度读出器12设在IGBT芯片中央。
还有，图6是表示二极管2不同场合的俯视图，与图4例所示IGBT1相同，将与引出电极4平行延伸的分离区域DR设在二极管芯片表面、沿第一方向D1的中央部，可在该分离区域DR中央部、二极管芯片表面中央部配置温度读出器。这种情况下，可监测二极管芯片中央的温度。
实施例2
本实施例涉及图1所示半导体装置的制造方法，图7至图9是图1的半导体装置制造工序各阶段同装置的纵剖视图。
首先在图7所示工序中，准备成为背面电极的金属基片3。
接着，在图8所示工序中，表面和背面有电极、且在该表面上有相对地分割并形成的第一和第二连接电极的IGBT1和二极管2，通过焊料6、7焊接到背面金属基片3表面。这里，第一和第二连接电极通过在IGBT1和二极管2处于晶片状态时对其最表面有Au的金属进行蒸镀或电镀来形成。
接着，在图9所示工序中，使预先一体形成的引出电极4的相对且分离的各电极布线部的底部(参照图1的底部5AB、5BB)，与对应于该电极布线部的连接电极相对地，将引出电极4设在IGBT1及二极管2顶部(引出电极4的定位)，然后通过焊料8、9将各电极布线部与相对于该电极布线部的连接电极焊接，从而，将引出电极4与IGBT1及二极管2电连接。
通过上述工序形成的半导体装置，用树脂等进行封装后，组成最终产品。
(追记)
本发明所述“功率半导体元件”的概念除了包括实施例1所示IGBT以外，还包括功率MOSFET等开关元件或二极管。
如上详细公开了本发明的实施方式，但以上内容只是可应用本发明的局部示例，本发明并不限于此。即，可认为在不超出本发明范围内可对上述实施例进行各式各样的修正及改变。

Claims (6)

1.一种半导体装置，其特征在于包括：
设有分别形成于表面及背面上的第一和第二主电极的功率半导体元件；
与所述功率半导体元件的所述第二主电极电连接的金属片；
在所述第一主电极上彼此相对地分离形成的第一和第二连接电极；以及
具备从其一方侧面部朝下方形成的第一电极布线部和从与所述一方侧面部相对的另一方侧面部朝下方、与所述第一电极布线部相对地与所述第一电极布线部分离并形成的第二电极布线部的引出电极，
所述第一电极布线部仅与所述第一连接电极电连接，
所述第二电极布线部仅与所述第二连接电极电连接。
2.如权利要求1所述的半导体装置，其特征在于：
所述第一和第二连接电极均沿着第一方向形成，
所述引出电极向与所述第一方向正交的第二方向延伸，
所述第一和第二连接电极在所述第二方向被分割。
3.如权利要求2所述的半导体装置，其特征在于：
所述第一和第二电极布线部均向内侧弯曲且彼此相对。
4.如权利要求2所述的半导体装置，其特征在于：
所述第一主电极在所述第一连接电极和所述第二连接电极之间的区域被分割为两部分，在所述第一连接电极和所述第二连接电极之间的所述功率半导体元件的表面，形成无所述第一主电极的分割区域；
在所述分割区域上形成监测所述功率半导体元件温度的温度读出器。
5.如权利要求4所述的半导体装置，其特征在于：
所述温度读出器设在所述功率半导体元件的所述表面中央。
6.一种半导体装置的制造方法，其特征在于包括以下工序：
将具备其上形成彼此相对地分离形成的第一和第二连接电极的第一主电极和与所述第一主电极相对的第二主电极的功率半导体元件的所述第二主电极与金属片表面电连接的工序；以及
在具备从其一方侧面部朝下方形成的第一电极布线部和从与所述一方侧面部相对的另一方侧面部朝下方与所述第一电极布线部相对地与所述第一电极布线部分离并形成的第二电极布线部的引出电极内，使所述第一电极布线部仅与所述第一连接电极电连接，同时使所述第二电极布线部仅与所述第二连接电极电连接的工序。
CNB2006100595582A 2005-03-02 2006-03-02 半导体装置及其制造方法 Active CN100521192C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005057185 2005-03-02
JP2005057185A JP4498170B2 (ja) 2005-03-02 2005-03-02 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
CN1828888A true CN1828888A (zh) 2006-09-06
CN100521192C CN100521192C (zh) 2009-07-29

Family

ID=36848290

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100595582A Active CN100521192C (zh) 2005-03-02 2006-03-02 半导体装置及其制造方法

Country Status (5)

Country Link
US (1) US7504729B2 (zh)
JP (1) JP4498170B2 (zh)
KR (1) KR100719055B1 (zh)
CN (1) CN100521192C (zh)
DE (1) DE102006005050B4 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108292642A (zh) * 2015-11-25 2018-07-17 三菱电机株式会社 电力用半导体装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007039916A1 (de) * 2007-08-23 2009-02-26 Siemens Ag Aufbau- und Verbindungstechnik von Modulen mittels dreidimensional geformter Leadframes
KR101505551B1 (ko) * 2007-11-30 2015-03-25 페어차일드코리아반도체 주식회사 온도 감지소자가 장착된 반도체 파워 모듈 패키지 및 그제조방법
US8053982B2 (en) * 2008-04-30 2011-11-08 Hewlett-Packard Development Company, L.P. Light-emitting diodes with carrier extraction electrodes
JP5300784B2 (ja) * 2010-05-21 2013-09-25 三菱電機株式会社 半導体モジュール及び半導体モジュールを搭載した回転電機
DE112012005921B4 (de) * 2012-02-22 2021-04-29 Mitsubishi Electric Corporation Halbleitervorrichtung
JP6094392B2 (ja) 2013-06-11 2017-03-15 株式会社デンソー 半導体装置
JP6448418B2 (ja) * 2015-03-09 2019-01-09 三菱電機株式会社 電力用半導体装置
JP6566927B2 (ja) * 2016-12-01 2019-08-28 三菱電機株式会社 半導体装置および電力変換装置
US11778718B2 (en) * 2020-05-27 2023-10-03 Meidensha Corporation High voltage generator and X-ray generator
JP2022091484A (ja) 2020-12-09 2022-06-21 富士電機株式会社 半導体モジュール

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210621A (en) * 1960-06-20 1965-10-05 Westinghouse Electric Corp Plural emitter semiconductor device
DE1514563A1 (de) 1965-09-07 1969-06-19 Semikron Gleichrichterbau Steuerbares Halbleiterbauelement
JPS58186975A (ja) * 1982-04-26 1983-11-01 Sumitomo Electric Ind Ltd 連続組立受光素子
JPH07112027B2 (ja) * 1989-07-27 1995-11-29 日本電気株式会社 半導体集積回路装置の構造
JP3180863B2 (ja) * 1993-07-27 2001-06-25 富士電機株式会社 加圧接触形半導体装置およびその組立方法
US5705848A (en) * 1995-11-24 1998-01-06 Asea Brown Boveri Ag Power semiconductor module having a plurality of submodules
JP3507714B2 (ja) * 1998-12-07 2004-03-15 株式会社東芝 マルチチップモジュール型半導体装置
JP3871486B2 (ja) * 1999-02-17 2007-01-24 株式会社ルネサステクノロジ 半導体装置
JP4226200B2 (ja) 2000-07-25 2009-02-18 三菱電機株式会社 半導体装置およびその製造方法
JP3712111B2 (ja) * 2001-03-30 2005-11-02 ユーディナデバイス株式会社 電力増幅用半導体装置
JP2003017003A (ja) * 2001-07-04 2003-01-17 Canon Inc ランプおよび光源装置
DE10155373A1 (de) 2001-11-10 2003-05-28 Bosch Gmbh Robert Verfahren zum Erfassen von Strömen in einem Halbleiterbauelement mit einem Multi-Zellen-Stromsensor
JP2004172448A (ja) * 2002-11-21 2004-06-17 Renesas Technology Corp 半導体装置
JP4078993B2 (ja) * 2003-01-27 2008-04-23 三菱電機株式会社 半導体装置
JP2005310844A (ja) * 2004-04-16 2005-11-04 Toshiba Corp パワー半導体モジュール

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108292642A (zh) * 2015-11-25 2018-07-17 三菱电机株式会社 电力用半导体装置

Also Published As

Publication number Publication date
KR100719055B1 (ko) 2007-05-16
DE102006005050B4 (de) 2013-05-08
KR20060096325A (ko) 2006-09-11
US7504729B2 (en) 2009-03-17
DE102006005050A1 (de) 2006-09-07
JP2006245182A (ja) 2006-09-14
US20060220180A1 (en) 2006-10-05
CN100521192C (zh) 2009-07-29
JP4498170B2 (ja) 2010-07-07

Similar Documents

Publication Publication Date Title
CN1828888A (zh) 半导体装置及其制造方法
CN1204623C (zh) 半导体装置
CN1089493C (zh) 功率半导体组件及其制造方法
US7487581B2 (en) Method of manufacturing an inverter device
US9691692B2 (en) Semiconductor device
CN1467828A (zh) 半导体器件
CN1820367A (zh) 表面安装多片器件
CN1638119A (zh) 电力半导体装置
CN1675765A (zh) 高功率mcm封装
CN101030570A (zh) 半导体装置
CN1797765A (zh) 功率模块、相脚和三相变换器
CN1874017A (zh) 白光发射器件
CN1901187A (zh) 半导体器件
CN1961474A (zh) 变换器装置
CN1812091A (zh) 半导体装置
CN1451180A (zh) 平面混合式二极管整流桥
CN101040386A (zh) 半导体器件以及其制造方法
CN1655354A (zh) 绝缘栅双极型晶体管模块
CN1702880A (zh) 半导体发光二极管(led)通孔倒扣焊芯片及生产工艺
CN109817612B (zh) 一种改善焊接型碳化硅功率模块电热性能的封装结构
US20220181310A1 (en) Semiconductor device
KR101734712B1 (ko) 파워모듈
CN100338751C (zh) 半导体装置
CN1211817C (zh) 陶瓷电容器装配结构
CN1202565C (zh) 半导体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant