KR20060096325A - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
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- KR20060096325A KR20060096325A KR1020060019867A KR20060019867A KR20060096325A KR 20060096325 A KR20060096325 A KR 20060096325A KR 1020060019867 A KR1020060019867 A KR 1020060019867A KR 20060019867 A KR20060019867 A KR 20060019867A KR 20060096325 A KR20060096325 A KR 20060096325A
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Abstract
Description
Claims (6)
- 표면 및 이면 위에 각각 형성된 제1 및 제2주전극을 구비하는 전력 반도체 소자와,상기 전력 반도체 소자의 상기 제2주전극과 전기적으로 접속된 금속판과,상기 제1주전극 위에 서로 마주 하도록 분리 형성된 제1 및 제2접속 전극과,한쪽의 측면부로부터 아래쪽을 향해 형성된 제1전극 배선부와, 상기 한쪽의 측면부에 대향하는 다른 쪽의 측면부로부터 아래쪽을 향해서 상기 제1전극 배선부와 서로 마주 하도록 상기 제1전극 배선부와는 분리하여 형성된 제2전극 배선부를 구비하는 인출전극를 구비하고,상기 제1전극 배선부는 상기 제1접속 전극과만 전기적으로 접속되고 있는 한편,상기 제2전극 배선부는 상기 제2접속 전극과만 전기적으로 접속되는 것을 특징으로 하는 반도체 장치.
- 제 1항에 있어서,상기 제1 및 제2접속 전극은 모두 제1방향을 따라 형성되고 있고,상기 인출전극은 상기 제1방향과 직교하는 제2방향으로 연장하고 있으며,상기 제1 및 제2접속 전극은 상기 제2방향에 관해서 분할되는 것을 특징으로 하는 반도체 장치.
- 제 2항에 있어서,상기 제1 및 제2전극 배선부는 모두 내측으로 절곡되어 서로 마주 하는 것을 특징으로 하는 반도체 장치.
- 제 2항에 있어서,상기 제1주전극은, 상기 제1접속 전극과 상기 제2접속 전극 사이의 영역에 있어서 2분할되고, 상기 제1주전극이 존재하지 않는 분할 영역이 상기 제1접속 전극과 상기 제2접속 전극 사이의 상기 전력 반도체 소자의 표면에 형성되고 있으며,상기 전력 반도체 소자의 온도를 모니터하는 온도 센서가 상기 분할 영역위에 형성되는 것을 특징으로 하는 반도체 장치.
- 제 4항에 있어서,상기 온도 센서가 상기 전력 반도체 소자의 상기 표면의 중앙에 설치되는 것을 특징으로 하는 반도체 장치.
- 서로 마주 하도록 분리 형성된 제1 및 제2접속 전극이 그 위에 형성된 제1주전극 및 상기 제1주전극에 대향하는 제2주전극을 구비하는 전력 반도체 소자의 상기 제2주전극을 금속판의 표면과 전기적으로 접속하는 공정과,한쪽의 측면부로부터 아래쪽을 향해 형성된 제1전극 배선부와, 상기 한쪽의 측면부에 대향하는 다른 쪽의 측면부로부터 아래쪽을 향해 상기 제1전극 배선부와 마주 하도록 상기 제1전극 배선부와는 분리하여 형성된 제2전극 배선부를 구비하는 인출전극 내에서, 상기 제1전극 배선부를 상기 제1접속 전극에만 전기적으로 접속함과 동시에, 상기 제2전극 배선부를 상기 제2접속 전극에만 전기적으로 접속하는 공정을 구비하는 것을 특징으로 하는 반도체 장치의 제조 방법.
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JP2005057185A JP4498170B2 (ja) | 2005-03-02 | 2005-03-02 | 半導体装置及びその製造方法 |
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KR20220162890A (ko) * | 2020-05-27 | 2022-12-08 | 메이덴샤 코포레이션 | 고전압 발생장치 및 x선 발생 장치 |
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DE102007039916A1 (de) * | 2007-08-23 | 2009-02-26 | Siemens Ag | Aufbau- und Verbindungstechnik von Modulen mittels dreidimensional geformter Leadframes |
KR101505551B1 (ko) * | 2007-11-30 | 2015-03-25 | 페어차일드코리아반도체 주식회사 | 온도 감지소자가 장착된 반도체 파워 모듈 패키지 및 그제조방법 |
US8053982B2 (en) * | 2008-04-30 | 2011-11-08 | Hewlett-Packard Development Company, L.P. | Light-emitting diodes with carrier extraction electrodes |
JP5300784B2 (ja) * | 2010-05-21 | 2013-09-25 | 三菱電機株式会社 | 半導体モジュール及び半導体モジュールを搭載した回転電機 |
DE112012005921B4 (de) * | 2012-02-22 | 2021-04-29 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
JP6094392B2 (ja) | 2013-06-11 | 2017-03-15 | 株式会社デンソー | 半導体装置 |
JP6448418B2 (ja) * | 2015-03-09 | 2019-01-09 | 三菱電機株式会社 | 電力用半導体装置 |
CN108292642B (zh) * | 2015-11-25 | 2021-04-30 | 三菱电机株式会社 | 电力用半导体装置 |
JP6566927B2 (ja) * | 2016-12-01 | 2019-08-28 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
JP2022091484A (ja) | 2020-12-09 | 2022-06-21 | 富士電機株式会社 | 半導体モジュール |
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CN100521192C (zh) | 2009-07-29 |
DE102006005050B4 (de) | 2013-05-08 |
CN1828888A (zh) | 2006-09-06 |
DE102006005050A1 (de) | 2006-09-07 |
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