CN1638119A - 电力半导体装置 - Google Patents
电力半导体装置 Download PDFInfo
- Publication number
- CN1638119A CN1638119A CNA2005100037238A CN200510003723A CN1638119A CN 1638119 A CN1638119 A CN 1638119A CN A2005100037238 A CNA2005100037238 A CN A2005100037238A CN 200510003723 A CN200510003723 A CN 200510003723A CN 1638119 A CN1638119 A CN 1638119A
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- semiconductor device
- semiconductor element
- electric power
- Prior art date
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Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 128
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 239000004020 conductor Substances 0.000 claims abstract description 28
- 230000009466 transformation Effects 0.000 claims description 43
- 238000009413 insulation Methods 0.000 claims description 15
- 238000005476 soldering Methods 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 238000012856 packing Methods 0.000 claims 5
- 230000002093 peripheral effect Effects 0.000 claims 2
- 229920001187 thermosetting polymer Polymers 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000945 filler Substances 0.000 description 3
- 239000000499 gel Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-001848 | 2004-01-07 | ||
JP2004001848 | 2004-01-07 | ||
JP2004001848A JP4491244B2 (ja) | 2004-01-07 | 2004-01-07 | 電力半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1638119A true CN1638119A (zh) | 2005-07-13 |
CN100435333C CN100435333C (zh) | 2008-11-19 |
Family
ID=34709021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100037238A Active CN100435333C (zh) | 2004-01-07 | 2005-01-06 | 电力半导体装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7535076B2 (zh) |
JP (1) | JP4491244B2 (zh) |
CN (1) | CN100435333C (zh) |
DE (1) | DE102004060935B4 (zh) |
FR (1) | FR2879021B1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102222663A (zh) * | 2010-04-14 | 2011-10-19 | 海力士半导体有限公司 | 具有柔性导体的堆叠封装 |
CN107567657A (zh) * | 2015-05-08 | 2018-01-09 | 敏捷电源开关三维集成Apsi3D | 半导体功率器件以及组装半导体功率器件的方法 |
CN110649004A (zh) * | 2018-06-26 | 2020-01-03 | 三菱电机株式会社 | 功率模块以及电力变换装置 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4478049B2 (ja) * | 2005-03-15 | 2010-06-09 | 三菱電機株式会社 | 半導体装置 |
JP5029078B2 (ja) * | 2006-03-15 | 2012-09-19 | 株式会社日立製作所 | 電力用半導体装置 |
US7999369B2 (en) * | 2006-08-29 | 2011-08-16 | Denso Corporation | Power electronic package having two substrates with multiple semiconductor chips and electronic components |
US7557434B2 (en) * | 2006-08-29 | 2009-07-07 | Denso Corporation | Power electronic package having two substrates with multiple electronic components |
DE102006040820B4 (de) * | 2006-08-31 | 2009-07-02 | Denso Corporation, Kariya | Elektrische Leistungspackung mit zwei Substraten mit mehreren elektronischen Komponenten |
DE102006040838B4 (de) * | 2006-08-31 | 2009-11-12 | DENSO CORPORATION, Kariya-shi | Elektronische Leistungspackung mit zwei Substraten mit mehreren Halbleiterchips und elektronischen Komponenten |
JP4919023B2 (ja) * | 2006-11-07 | 2012-04-18 | 株式会社デンソー | パワー半導体モジュール実装構造 |
DE102007005233B4 (de) | 2007-01-30 | 2021-09-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Leistungsmodul |
US7973387B2 (en) * | 2007-06-08 | 2011-07-05 | Continental Automotive Systems Us, Inc. | Insulated gate bipolar transistor |
JP5241177B2 (ja) * | 2007-09-05 | 2013-07-17 | 株式会社オクテック | 半導体装置及び半導体装置の製造方法 |
JP5230213B2 (ja) * | 2007-09-26 | 2013-07-10 | ローム株式会社 | 半導体装置 |
JP5447453B2 (ja) | 2010-11-03 | 2014-03-19 | 株式会社デンソー | スイッチングモジュール |
JP5525024B2 (ja) * | 2012-10-29 | 2014-06-18 | 株式会社オクテック | 半導体装置及び半導体装置の製造方法 |
JP6054345B2 (ja) * | 2014-07-28 | 2016-12-27 | 株式会社オクテック | 半導体装置及び半導体装置の製造方法 |
JP6956823B2 (ja) * | 2015-05-08 | 2021-11-02 | アジャイル・パワー・スイッチ・3・ディー−インテグレイション・エイ・ピー・エス・アイ・3・ディー | 半導体パワーデバイスの組立て方法 |
EP3588524B1 (en) | 2018-06-28 | 2020-08-05 | Black & Decker Inc. | Electronic switch module with an integrated flyback diode |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4646129A (en) * | 1983-09-06 | 1987-02-24 | General Electric Company | Hermetic power chip packages |
JPS6272147A (ja) * | 1985-09-26 | 1987-04-02 | Toshiba Corp | 樹脂封止型半導体装置 |
JPH0278255A (ja) * | 1988-09-14 | 1990-03-19 | Hitachi Ltd | 樹脂封止型半導体装置 |
US5559374A (en) * | 1993-03-25 | 1996-09-24 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit |
JPH06302734A (ja) | 1993-04-14 | 1994-10-28 | Sansha Electric Mfg Co Ltd | 電力用半導体モジュール |
JP2991010B2 (ja) * | 1993-09-29 | 1999-12-20 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JPH07273276A (ja) * | 1994-03-28 | 1995-10-20 | Nissan Motor Co Ltd | パワー素子とスナバ素子の接続構造及びその実装構造 |
DE4421319A1 (de) * | 1994-06-17 | 1995-12-21 | Abb Management Ag | Niederinduktives Leistungshalbleitermodul |
JP3022178B2 (ja) * | 1994-06-21 | 2000-03-15 | 日産自動車株式会社 | パワーデバイスチップの実装構造 |
JP2581456B2 (ja) * | 1994-06-27 | 1997-02-12 | 日本電気株式会社 | 部品の接続構造及びその製造方法 |
JPH09283887A (ja) * | 1996-04-16 | 1997-10-31 | Toshiba Corp | 半導体装置及びこの装置に用いる金属絶縁基板 |
JP3879150B2 (ja) * | 1996-08-12 | 2007-02-07 | 株式会社デンソー | 半導体装置 |
DE59713027D1 (de) * | 1996-09-30 | 2010-03-25 | Infineon Technologies Ag | Mikroelektronisches bauteil in sandwich-bauweise |
US6144101A (en) * | 1996-12-03 | 2000-11-07 | Micron Technology, Inc. | Flip chip down-bond: method and apparatus |
FR2759493B1 (fr) * | 1997-02-12 | 2001-01-26 | Motorola Semiconducteurs | Dispositif de puissance a semiconducteur |
GB2334143A (en) * | 1998-02-07 | 1999-08-11 | Motorola Inc | An electronic device package |
US6072240A (en) * | 1998-10-16 | 2000-06-06 | Denso Corporation | Semiconductor chip package |
FR2785448B1 (fr) * | 1998-10-30 | 2001-01-26 | Alstom Technology | Procede de fabrication d'une electrode de commande de grille pour transistor igbt |
FR2785447B1 (fr) * | 1998-10-30 | 2000-12-15 | Alstom Technology | Procede de raccordement electrique de puces de transistor igbt montees sur une plaquette de circuits integres |
FR2786656B1 (fr) * | 1998-11-27 | 2001-01-26 | Alstom Technology | Composant electronique de puissance comportant des moyens de refroidissement |
FR2786655B1 (fr) * | 1998-11-27 | 2001-11-23 | Alstom Technology | Dispositif electronique de puissance |
US6306680B1 (en) * | 1999-02-22 | 2001-10-23 | General Electric Company | Power overlay chip scale packages for discrete power devices |
US6703707B1 (en) * | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
US6864574B1 (en) * | 1999-11-29 | 2005-03-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor package |
US6350954B1 (en) * | 2000-01-24 | 2002-02-26 | Motorola Inc. | Electronic device package, and method |
JP2001291823A (ja) * | 2000-04-05 | 2001-10-19 | Toshiba Digital Media Engineering Corp | 半導体装置 |
JP2002016215A (ja) * | 2000-06-30 | 2002-01-18 | Toshiba Corp | 半導体装置モジュール |
FR2811475B1 (fr) * | 2000-07-07 | 2002-08-23 | Alstom | Procede de fabrication d'un composant electronique de puissance, et composant electronique de puissance ainsi obtenu |
JP4085563B2 (ja) * | 2000-08-24 | 2008-05-14 | 富士電機ホールディングス株式会社 | パワー半導体モジュールの製造方法 |
FR2814907A1 (fr) * | 2000-10-03 | 2002-04-05 | Alstom | Module electronique de puissance et bras d'onduleur comportant un tel module |
EP1209742A1 (de) * | 2000-11-22 | 2002-05-29 | ABB Schweiz AG | Hochleistungshalbleitermodul sowie Anwendung eines solchen Hochleistungshalbleitermoduls |
JP3923258B2 (ja) * | 2001-01-17 | 2007-05-30 | 松下電器産業株式会社 | 電力制御系電子回路装置及びその製造方法 |
JP2003243608A (ja) * | 2002-02-15 | 2003-08-29 | Mitsubishi Electric Corp | 電力用モジュール |
DE10258565B3 (de) * | 2002-12-14 | 2004-08-12 | Semikron Elektronik Gmbh | Schaltungsanordnung für Halbleiterbauelemente und Verfahren zur Herstellung |
-
2004
- 2004-01-07 JP JP2004001848A patent/JP4491244B2/ja not_active Expired - Lifetime
- 2004-12-17 DE DE200410060935 patent/DE102004060935B4/de active Active
- 2004-12-23 FR FR0413856A patent/FR2879021B1/fr active Active
-
2005
- 2005-01-06 CN CNB2005100037238A patent/CN100435333C/zh active Active
- 2005-01-06 US US11/029,379 patent/US7535076B2/en active Active
-
2009
- 2009-04-21 US US12/427,151 patent/US7859079B2/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102222663A (zh) * | 2010-04-14 | 2011-10-19 | 海力士半导体有限公司 | 具有柔性导体的堆叠封装 |
CN102222663B (zh) * | 2010-04-14 | 2015-04-29 | 海力士半导体有限公司 | 具有柔性导体的堆叠封装 |
CN107567657A (zh) * | 2015-05-08 | 2018-01-09 | 敏捷电源开关三维集成Apsi3D | 半导体功率器件以及组装半导体功率器件的方法 |
CN110649004A (zh) * | 2018-06-26 | 2020-01-03 | 三菱电机株式会社 | 功率模块以及电力变换装置 |
Also Published As
Publication number | Publication date |
---|---|
US20090250781A1 (en) | 2009-10-08 |
JP2005197435A (ja) | 2005-07-21 |
US7859079B2 (en) | 2010-12-28 |
US20050146027A1 (en) | 2005-07-07 |
FR2879021A1 (fr) | 2006-06-09 |
FR2879021B1 (fr) | 2007-10-26 |
DE102004060935A1 (de) | 2005-08-04 |
US7535076B2 (en) | 2009-05-19 |
CN100435333C (zh) | 2008-11-19 |
DE102004060935B4 (de) | 2014-12-24 |
JP4491244B2 (ja) | 2010-06-30 |
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