FR2879021B1 - Dispositif a semiconducteur de puissance - Google Patents
Dispositif a semiconducteur de puissanceInfo
- Publication number
- FR2879021B1 FR2879021B1 FR0413856A FR0413856A FR2879021B1 FR 2879021 B1 FR2879021 B1 FR 2879021B1 FR 0413856 A FR0413856 A FR 0413856A FR 0413856 A FR0413856 A FR 0413856A FR 2879021 B1 FR2879021 B1 FR 2879021B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- power semiconductor
- power
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004001848A JP4491244B2 (ja) | 2004-01-07 | 2004-01-07 | 電力半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2879021A1 FR2879021A1 (fr) | 2006-06-09 |
FR2879021B1 true FR2879021B1 (fr) | 2007-10-26 |
Family
ID=34709021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0413856A Active FR2879021B1 (fr) | 2004-01-07 | 2004-12-23 | Dispositif a semiconducteur de puissance |
Country Status (5)
Country | Link |
---|---|
US (2) | US7535076B2 (fr) |
JP (1) | JP4491244B2 (fr) |
CN (1) | CN100435333C (fr) |
DE (1) | DE102004060935B4 (fr) |
FR (1) | FR2879021B1 (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4478049B2 (ja) * | 2005-03-15 | 2010-06-09 | 三菱電機株式会社 | 半導体装置 |
JP5029078B2 (ja) * | 2006-03-15 | 2012-09-19 | 株式会社日立製作所 | 電力用半導体装置 |
US7557434B2 (en) * | 2006-08-29 | 2009-07-07 | Denso Corporation | Power electronic package having two substrates with multiple electronic components |
US7999369B2 (en) * | 2006-08-29 | 2011-08-16 | Denso Corporation | Power electronic package having two substrates with multiple semiconductor chips and electronic components |
DE102006040838B4 (de) * | 2006-08-31 | 2009-11-12 | DENSO CORPORATION, Kariya-shi | Elektronische Leistungspackung mit zwei Substraten mit mehreren Halbleiterchips und elektronischen Komponenten |
DE102006040820B4 (de) * | 2006-08-31 | 2009-07-02 | Denso Corporation, Kariya | Elektrische Leistungspackung mit zwei Substraten mit mehreren elektronischen Komponenten |
JP4919023B2 (ja) * | 2006-11-07 | 2012-04-18 | 株式会社デンソー | パワー半導体モジュール実装構造 |
DE102007005233B4 (de) | 2007-01-30 | 2021-09-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Leistungsmodul |
US7973387B2 (en) * | 2007-06-08 | 2011-07-05 | Continental Automotive Systems Us, Inc. | Insulated gate bipolar transistor |
JP5241177B2 (ja) * | 2007-09-05 | 2013-07-17 | 株式会社オクテック | 半導体装置及び半導体装置の製造方法 |
JP5230213B2 (ja) * | 2007-09-26 | 2013-07-10 | ローム株式会社 | 半導体装置 |
KR101078743B1 (ko) * | 2010-04-14 | 2011-11-02 | 주식회사 하이닉스반도체 | 스택 패키지 |
JP5447453B2 (ja) | 2010-11-03 | 2014-03-19 | 株式会社デンソー | スイッチングモジュール |
JP5525024B2 (ja) * | 2012-10-29 | 2014-06-18 | 株式会社オクテック | 半導体装置及び半導体装置の製造方法 |
JP6054345B2 (ja) * | 2014-07-28 | 2016-12-27 | 株式会社オクテック | 半導体装置及び半導体装置の製造方法 |
JP2018515941A (ja) * | 2015-05-08 | 2018-06-14 | アジャイル・パワー・スイッチ・3・ディー−インテグレイション・エイ・ピー・エス・アイ・3・ディー | 半導体パワーデバイスおよび半導体パワーデバイスの組立て方法 |
JP6956823B2 (ja) * | 2015-05-08 | 2021-11-02 | アジャイル・パワー・スイッチ・3・ディー−インテグレイション・エイ・ピー・エス・アイ・3・ディー | 半導体パワーデバイスの組立て方法 |
JP2020004784A (ja) * | 2018-06-26 | 2020-01-09 | 三菱電機株式会社 | パワーモジュールおよび電力変換装置 |
US11477889B2 (en) | 2018-06-28 | 2022-10-18 | Black & Decker Inc. | Electronic switch module with an integrated flyback diode |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4646129A (en) * | 1983-09-06 | 1987-02-24 | General Electric Company | Hermetic power chip packages |
JPS6272147A (ja) * | 1985-09-26 | 1987-04-02 | Toshiba Corp | 樹脂封止型半導体装置 |
JPH0278255A (ja) * | 1988-09-14 | 1990-03-19 | Hitachi Ltd | 樹脂封止型半導体装置 |
US5559374A (en) * | 1993-03-25 | 1996-09-24 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit |
JPH06302734A (ja) | 1993-04-14 | 1994-10-28 | Sansha Electric Mfg Co Ltd | 電力用半導体モジュール |
JP2991010B2 (ja) * | 1993-09-29 | 1999-12-20 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JPH07273276A (ja) * | 1994-03-28 | 1995-10-20 | Nissan Motor Co Ltd | パワー素子とスナバ素子の接続構造及びその実装構造 |
DE4421319A1 (de) * | 1994-06-17 | 1995-12-21 | Abb Management Ag | Niederinduktives Leistungshalbleitermodul |
JP3022178B2 (ja) * | 1994-06-21 | 2000-03-15 | 日産自動車株式会社 | パワーデバイスチップの実装構造 |
JP2581456B2 (ja) * | 1994-06-27 | 1997-02-12 | 日本電気株式会社 | 部品の接続構造及びその製造方法 |
JPH09283887A (ja) * | 1996-04-16 | 1997-10-31 | Toshiba Corp | 半導体装置及びこの装置に用いる金属絶縁基板 |
JP3879150B2 (ja) * | 1996-08-12 | 2007-02-07 | 株式会社デンソー | 半導体装置 |
EP0931346B1 (fr) * | 1996-09-30 | 2010-02-10 | Infineon Technologies AG | Composant microelectronique a structure sandwich |
US6144101A (en) * | 1996-12-03 | 2000-11-07 | Micron Technology, Inc. | Flip chip down-bond: method and apparatus |
FR2759493B1 (fr) * | 1997-02-12 | 2001-01-26 | Motorola Semiconducteurs | Dispositif de puissance a semiconducteur |
GB2334143A (en) * | 1998-02-07 | 1999-08-11 | Motorola Inc | An electronic device package |
US6072240A (en) * | 1998-10-16 | 2000-06-06 | Denso Corporation | Semiconductor chip package |
FR2785447B1 (fr) * | 1998-10-30 | 2000-12-15 | Alstom Technology | Procede de raccordement electrique de puces de transistor igbt montees sur une plaquette de circuits integres |
FR2785448B1 (fr) * | 1998-10-30 | 2001-01-26 | Alstom Technology | Procede de fabrication d'une electrode de commande de grille pour transistor igbt |
FR2786655B1 (fr) * | 1998-11-27 | 2001-11-23 | Alstom Technology | Dispositif electronique de puissance |
FR2786656B1 (fr) * | 1998-11-27 | 2001-01-26 | Alstom Technology | Composant electronique de puissance comportant des moyens de refroidissement |
US6306680B1 (en) * | 1999-02-22 | 2001-10-23 | General Electric Company | Power overlay chip scale packages for discrete power devices |
US6703707B1 (en) * | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
US6864574B1 (en) * | 1999-11-29 | 2005-03-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor package |
US6350954B1 (en) * | 2000-01-24 | 2002-02-26 | Motorola Inc. | Electronic device package, and method |
JP2001291823A (ja) * | 2000-04-05 | 2001-10-19 | Toshiba Digital Media Engineering Corp | 半導体装置 |
JP2002016215A (ja) * | 2000-06-30 | 2002-01-18 | Toshiba Corp | 半導体装置モジュール |
FR2811475B1 (fr) * | 2000-07-07 | 2002-08-23 | Alstom | Procede de fabrication d'un composant electronique de puissance, et composant electronique de puissance ainsi obtenu |
JP4085563B2 (ja) * | 2000-08-24 | 2008-05-14 | 富士電機ホールディングス株式会社 | パワー半導体モジュールの製造方法 |
FR2814907A1 (fr) * | 2000-10-03 | 2002-04-05 | Alstom | Module electronique de puissance et bras d'onduleur comportant un tel module |
EP1209742A1 (fr) * | 2000-11-22 | 2002-05-29 | ABB Schweiz AG | Module semi-conductrice à haut prestation et utilisation de la meme |
JP3923258B2 (ja) * | 2001-01-17 | 2007-05-30 | 松下電器産業株式会社 | 電力制御系電子回路装置及びその製造方法 |
JP2003243608A (ja) * | 2002-02-15 | 2003-08-29 | Mitsubishi Electric Corp | 電力用モジュール |
DE10258565B3 (de) * | 2002-12-14 | 2004-08-12 | Semikron Elektronik Gmbh | Schaltungsanordnung für Halbleiterbauelemente und Verfahren zur Herstellung |
-
2004
- 2004-01-07 JP JP2004001848A patent/JP4491244B2/ja not_active Expired - Lifetime
- 2004-12-17 DE DE200410060935 patent/DE102004060935B4/de active Active
- 2004-12-23 FR FR0413856A patent/FR2879021B1/fr active Active
-
2005
- 2005-01-06 US US11/029,379 patent/US7535076B2/en active Active
- 2005-01-06 CN CNB2005100037238A patent/CN100435333C/zh active Active
-
2009
- 2009-04-21 US US12/427,151 patent/US7859079B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE102004060935B4 (de) | 2014-12-24 |
US7535076B2 (en) | 2009-05-19 |
CN1638119A (zh) | 2005-07-13 |
FR2879021A1 (fr) | 2006-06-09 |
US20050146027A1 (en) | 2005-07-07 |
CN100435333C (zh) | 2008-11-19 |
US20090250781A1 (en) | 2009-10-08 |
DE102004060935A1 (de) | 2005-08-04 |
JP2005197435A (ja) | 2005-07-21 |
JP4491244B2 (ja) | 2010-06-30 |
US7859079B2 (en) | 2010-12-28 |
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