FR2842352B1 - Dispositif a semiconducteur de puissance - Google Patents

Dispositif a semiconducteur de puissance

Info

Publication number
FR2842352B1
FR2842352B1 FR0301668A FR0301668A FR2842352B1 FR 2842352 B1 FR2842352 B1 FR 2842352B1 FR 0301668 A FR0301668 A FR 0301668A FR 0301668 A FR0301668 A FR 0301668A FR 2842352 B1 FR2842352 B1 FR 2842352B1
Authority
FR
France
Prior art keywords
semiconductor device
power semiconductor
power
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0301668A
Other languages
English (en)
Other versions
FR2842352A1 (fr
Inventor
Takaaki Shirasawa
Yasuo Koutake
Tsuyoshi Takayama
Natsuki Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2842352A1 publication Critical patent/FR2842352A1/fr
Application granted granted Critical
Publication of FR2842352B1 publication Critical patent/FR2842352B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
FR0301668A 2002-07-15 2003-02-12 Dispositif a semiconducteur de puissance Expired - Fee Related FR2842352B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002205099A JP3847676B2 (ja) 2002-07-15 2002-07-15 パワー半導体装置

Publications (2)

Publication Number Publication Date
FR2842352A1 FR2842352A1 (fr) 2004-01-16
FR2842352B1 true FR2842352B1 (fr) 2006-03-03

Family

ID=29267857

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0301668A Expired - Fee Related FR2842352B1 (fr) 2002-07-15 2003-02-12 Dispositif a semiconducteur de puissance

Country Status (6)

Country Link
US (1) US6642576B1 (fr)
JP (1) JP3847676B2 (fr)
KR (1) KR100566046B1 (fr)
CN (1) CN100347857C (fr)
DE (1) DE10310809B4 (fr)
FR (1) FR2842352B1 (fr)

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DE102004019443B3 (de) * 2004-04-19 2005-08-11 Siemens Ag Leistungsmodul
DE102004027185B4 (de) * 2004-06-03 2008-08-28 Infineon Technologies Ag Niederinduktives Halbleiterbauelement mit Halbbrückenkonfiguration
US20060022355A1 (en) * 2004-07-29 2006-02-02 Takayuki Murai Power module and electric transportation apparatus incorporating the same
JP4743396B2 (ja) * 2004-07-29 2011-08-10 ヤマハ発動機株式会社 パワーモジュール、モータコントロールユニット、電動輸送機器およびパワーモジュールの製造方法
JP4635564B2 (ja) * 2004-11-04 2011-02-23 富士電機システムズ株式会社 半導体装置
JP4661645B2 (ja) * 2005-03-23 2011-03-30 トヨタ自動車株式会社 パワー半導体モジュール
JP2007027432A (ja) * 2005-07-15 2007-02-01 Sanken Electric Co Ltd 半導体装置
JP2007116013A (ja) * 2005-10-24 2007-05-10 Renesas Technology Corp 半導体装置及びそれを用いた電源装置
US7554188B2 (en) * 2006-04-13 2009-06-30 International Rectifier Corporation Low inductance bond-wireless co-package for high power density devices, especially for IGBTs and diodes
CN101473520A (zh) * 2006-06-23 2009-07-01 三菱电机株式会社 功率转换装置
JP5232367B2 (ja) 2006-07-12 2013-07-10 ルネサスエレクトロニクス株式会社 半導体装置
JP4803068B2 (ja) * 2007-02-22 2011-10-26 トヨタ自動車株式会社 半導体モジュール
JP2009043820A (ja) 2007-08-07 2009-02-26 Rohm Co Ltd 高効率モジュール
JP4902560B2 (ja) * 2008-01-28 2012-03-21 株式会社日立製作所 パワー半導体モジュール
JP5067267B2 (ja) 2008-06-05 2012-11-07 三菱電機株式会社 樹脂封止型半導体装置とその製造方法
JP4957815B2 (ja) * 2009-06-24 2012-06-20 株式会社デンソー 半導体モジュール及びそれを用いた電子回路内蔵型モータ
FR2951019B1 (fr) * 2009-10-07 2012-06-08 Valeo Etudes Electroniques Module de puissance pour vehicule automobile
US8513784B2 (en) * 2010-03-18 2013-08-20 Alpha & Omega Semiconductor Incorporated Multi-layer lead frame package and method of fabrication
JP5242629B2 (ja) * 2010-05-10 2013-07-24 株式会社東芝 電力用半導体素子
DE102010020900C5 (de) * 2010-05-18 2013-06-06 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung von Leistungshalbleitersubstraten
JP5174085B2 (ja) * 2010-05-20 2013-04-03 三菱電機株式会社 半導体装置
JP5935672B2 (ja) * 2012-01-31 2016-06-15 アイシン・エィ・ダブリュ株式会社 スイッチング素子ユニット
KR101388737B1 (ko) * 2012-04-12 2014-04-25 삼성전기주식회사 반도체 패키지, 반도체 모듈, 및 그 실장 구조
JP2013258321A (ja) * 2012-06-13 2013-12-26 Fuji Electric Co Ltd 半導体装置
TWI500135B (zh) 2012-12-10 2015-09-11 Ind Tech Res Inst 堆疊式功率元件模組
JP5444486B2 (ja) * 2013-02-15 2014-03-19 株式会社東芝 インバータ装置
DE102013207507B3 (de) 2013-04-25 2014-07-24 Conti Temic Microelectronic Gmbh Leistungsmodul, Stromrichter und Antriebsanordnung mit einem Leistungsmodul
US9666395B2 (en) * 2013-07-10 2017-05-30 Hitachi Automotive Systems, Ltd. Power semiconductor module
WO2015049944A1 (fr) 2013-10-03 2015-04-09 富士電機株式会社 Module semi-conducteur
JP5996126B2 (ja) * 2013-12-05 2016-09-21 三菱電機株式会社 電力半導体装置
JP2014140080A (ja) * 2014-05-07 2014-07-31 Rohm Co Ltd 高効率モジュール
US10103085B2 (en) 2014-07-01 2018-10-16 Siemens Aktiengesellschaft Clamping assembly having a pressure element
JP6259168B2 (ja) * 2014-10-24 2018-01-10 アーベーベー・シュバイツ・アーゲー 半導体モジュールおよび半導体モジュールのスタック配列
JP6739453B2 (ja) * 2015-05-22 2020-08-12 アーベーベー・シュバイツ・アーゲーＡＢＢ Ｓｃｈｗｅｉｚ ＡＧ パワー半導体モジュール
US10137789B2 (en) * 2016-07-20 2018-11-27 Ford Global Technologies, Llc Signal pin arrangement for multi-device power module
CN108346628B (zh) * 2017-01-24 2021-06-18 比亚迪半导体股份有限公司 一种功率模块及其制造方法
WO2019012678A1 (fr) * 2017-07-14 2019-01-17 新電元工業株式会社 Module électronique
JP6870531B2 (ja) * 2017-08-21 2021-05-12 三菱電機株式会社 パワーモジュールおよび電力変換装置
US20190103342A1 (en) 2017-10-04 2019-04-04 Infineon Technologies Ag Semiconductor chip package comprising substrate, semiconductor chip, and leadframe and a method for fabricating the same
FR3074011B1 (fr) * 2017-11-21 2019-12-20 Safran Electronics & Defense Module electrique de puissance
DE102018207537A1 (de) * 2018-05-15 2019-11-21 Robert Bosch Gmbh Verbundanordnung aus drei gestapelten Fügepartnern
JP7106981B2 (ja) * 2018-05-18 2022-07-27 富士電機株式会社 逆導通型半導体装置
US20220352137A1 (en) * 2020-11-02 2022-11-03 Dynex Semiconductor Limited High power density 3d semiconductor module packaging

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JP3396566B2 (ja) * 1995-10-25 2003-04-14 三菱電機株式会社 半導体装置
JP3879150B2 (ja) * 1996-08-12 2007-02-07 株式会社デンソー 半導体装置
JP3426101B2 (ja) * 1997-02-25 2003-07-14 三菱電機株式会社 整流装置
US5892676A (en) * 1997-10-27 1999-04-06 Hsieh; Joe C. Rectifier bridges assembly having improved heat dispersing characteristics and an arcing-free design
JP3777755B2 (ja) * 1997-11-11 2006-05-24 株式会社デンソー インバータ装置
JP2000091485A (ja) * 1998-07-14 2000-03-31 Denso Corp 半導体装置
DE19950026B4 (de) * 1999-10-09 2010-11-11 Robert Bosch Gmbh Leistungshalbleitermodul
JP2001135741A (ja) * 1999-11-05 2001-05-18 Oki Electric Ind Co Ltd チップ部品の実装構造
JP3596388B2 (ja) * 1999-11-24 2004-12-02 株式会社デンソー 半導体装置
FR2803132B1 (fr) * 1999-12-23 2002-05-31 Valeo Equip Electr Moteur Systeme de redressement perfectionne pour diodes pastilles
JP2001291823A (ja) * 2000-04-05 2001-10-19 Toshiba Digital Media Engineering Corp 半導体装置
JP2002026251A (ja) * 2000-07-11 2002-01-25 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
FR2842352A1 (fr) 2004-01-16
CN1469469A (zh) 2004-01-21
JP3847676B2 (ja) 2006-11-22
JP2004047850A (ja) 2004-02-12
DE10310809A1 (de) 2004-02-12
DE10310809B4 (de) 2008-10-23
US6642576B1 (en) 2003-11-04
KR20040007236A (ko) 2004-01-24
KR100566046B1 (ko) 2006-03-30
CN100347857C (zh) 2007-11-07

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20141031