CN1168794C - 用于氧化物cmp的组合物 - Google Patents

用于氧化物cmp的组合物 Download PDF

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Publication number
CN1168794C
CN1168794C CNB971819726A CN97181972A CN1168794C CN 1168794 C CN1168794 C CN 1168794C CN B971819726 A CNB971819726 A CN B971819726A CN 97181972 A CN97181972 A CN 97181972A CN 1168794 C CN1168794 C CN 1168794C
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CN
China
Prior art keywords
chemical mechanical
mechanical polishing
cerium
acid
polishing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB971819726A
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English (en)
Chinese (zh)
Other versions
CN1248994A (zh
Inventor
��̹��S�����޸�
高坦·S·格罗弗
L
布赖恩·L·米勒
王淑敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Corp
Original Assignee
Cabot Corp
Cabot Microelectronics Corp
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Filing date
Publication date
Application filed by Cabot Corp, Cabot Microelectronics Corp filed Critical Cabot Corp
Publication of CN1248994A publication Critical patent/CN1248994A/zh
Application granted granted Critical
Publication of CN1168794C publication Critical patent/CN1168794C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
CNB971819726A 1996-12-30 1997-12-19 用于氧化物cmp的组合物 Expired - Lifetime CN1168794C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/774,488 1996-12-30
US08/774,488 US5759917A (en) 1996-12-30 1996-12-30 Composition for oxide CMP

Publications (2)

Publication Number Publication Date
CN1248994A CN1248994A (zh) 2000-03-29
CN1168794C true CN1168794C (zh) 2004-09-29

Family

ID=25101406

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB971819726A Expired - Lifetime CN1168794C (zh) 1996-12-30 1997-12-19 用于氧化物cmp的组合物

Country Status (11)

Country Link
US (3) US5759917A (enExample)
EP (1) EP0963419B1 (enExample)
JP (2) JP2001507739A (enExample)
KR (1) KR20000069823A (enExample)
CN (1) CN1168794C (enExample)
AT (1) ATE264378T1 (enExample)
AU (1) AU5532898A (enExample)
DE (1) DE69728691T2 (enExample)
IL (1) IL130720A0 (enExample)
TW (1) TW505690B (enExample)
WO (1) WO1998029515A1 (enExample)

Families Citing this family (215)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230986B2 (ja) * 1995-11-13 2001-11-19 株式会社東芝 ポリッシング方法、半導体装置の製造方法及び半導体製造装置。
AU1670597A (en) * 1996-02-07 1997-08-28 Hitachi Chemical Company, Ltd. Cerium oxide abrasive, semiconductor chip, semiconductor device, process for the production of them, and method for the polishing of substrates
US5827781A (en) * 1996-07-17 1998-10-27 Micron Technology, Inc. Planarization slurry including a dispersant and method of using same
US5916819A (en) 1996-07-17 1999-06-29 Micron Technology, Inc. Planarization fluid composition chelating agents and planarization method using same
US6132637A (en) 1996-09-27 2000-10-17 Rodel Holdings, Inc. Composition and method for polishing a composite of silica and silicon nitride
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US20060147369A1 (en) * 1997-07-21 2006-07-06 Neophotonics Corporation Nanoparticle production and corresponding structures
US20090255189A1 (en) * 1998-08-19 2009-10-15 Nanogram Corporation Aluminum oxide particles
US7384680B2 (en) 1997-07-21 2008-06-10 Nanogram Corporation Nanoparticle-based power coatings and corresponding structures
US20090075083A1 (en) * 1997-07-21 2009-03-19 Nanogram Corporation Nanoparticle production and corresponding structures
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
US20040229468A1 (en) * 1997-10-31 2004-11-18 Seiichi Kondo Polishing method
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6190237B1 (en) * 1997-11-06 2001-02-20 International Business Machines Corporation pH-buffered slurry and use thereof for polishing
US6149696A (en) * 1997-11-06 2000-11-21 Komag, Inc. Colloidal silica slurry for NiP plated disk polishing
US6362101B2 (en) * 1997-11-24 2002-03-26 United Microelectronics Corp. Chemical mechanical polishing methods using low pH slurry mixtures
US6114248A (en) * 1998-01-15 2000-09-05 International Business Machines Corporation Process to reduce localized polish stop erosion
US5990012A (en) 1998-01-27 1999-11-23 Micron Technology, Inc. Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads
DE19805525C2 (de) * 1998-02-11 2002-06-13 Sez Semiconduct Equip Zubehoer Verfahren zum Naßätzen von Halbleiterscheiben zum Erzeugen eines definierten Randbereichs durch Unterätzen
TW419518B (en) * 1998-02-20 2001-01-21 Ind Tech Res Inst Non-Newtonian-fluid-behaviored formulation
US6159076A (en) * 1998-05-28 2000-12-12 Komag, Inc. Slurry comprising a ligand or chelating agent for polishing a surface
US5928962A (en) * 1998-06-01 1999-07-27 Motorola, Inc. Process for forming a semiconductor device
US6217416B1 (en) * 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6124207A (en) * 1998-08-31 2000-09-26 Micron Technology, Inc. Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries
US6143192A (en) 1998-09-03 2000-11-07 Micron Technology, Inc. Ruthenium and ruthenium dioxide removal method and material
US6468909B1 (en) 1998-09-03 2002-10-22 Micron Technology, Inc. Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers and methods of using such compositions
JP2000080350A (ja) * 1998-09-07 2000-03-21 Speedfam-Ipec Co Ltd 研磨用組成物及びそれによるポリッシング加工方法
US6270395B1 (en) 1998-09-24 2001-08-07 Alliedsignal, Inc. Oxidizing polishing slurries for low dielectric constant materials
US6069047A (en) * 1998-09-29 2000-05-30 Wanlass; Frank M. Method of making damascene completely self aligned ultra short channel MOS transistor
US6267644B1 (en) 1998-11-06 2001-07-31 Beaver Creek Concepts Inc Fixed abrasive finishing element having aids finishing method
US6541381B2 (en) 1998-11-06 2003-04-01 Beaver Creek Concepts Inc Finishing method for semiconductor wafers using a lubricating boundary layer
US6568989B1 (en) 1999-04-01 2003-05-27 Beaver Creek Concepts Inc Semiconductor wafer finishing control
US6428388B2 (en) 1998-11-06 2002-08-06 Beaver Creek Concepts Inc. Finishing element with finishing aids
US6656023B1 (en) * 1998-11-06 2003-12-02 Beaver Creek Concepts Inc In situ control with lubricant and tracking
US6291349B1 (en) 1999-03-25 2001-09-18 Beaver Creek Concepts Inc Abrasive finishing with partial organic boundary layer
US6739947B1 (en) 1998-11-06 2004-05-25 Beaver Creek Concepts Inc In situ friction detector method and apparatus
US6283829B1 (en) 1998-11-06 2001-09-04 Beaver Creek Concepts, Inc In situ friction detector method for finishing semiconductor wafers
US7131890B1 (en) 1998-11-06 2006-11-07 Beaver Creek Concepts, Inc. In situ finishing control
US6293851B1 (en) 1998-11-06 2001-09-25 Beaver Creek Concepts Inc Fixed abrasive finishing method using lubricants
US6346202B1 (en) 1999-03-25 2002-02-12 Beaver Creek Concepts Inc Finishing with partial organic boundary layer
US6634927B1 (en) 1998-11-06 2003-10-21 Charles J Molnar Finishing element using finishing aids
FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
US6395635B1 (en) 1998-12-07 2002-05-28 Taiwan Semiconductor Manufacturing Company Reduction of tungsten damascene residue
US6200875B1 (en) 1998-12-21 2001-03-13 Taiwan Semiconductor Manufacturing Company Chemical mechanical polishing of polysilicon plug using a silicon nitride stop layer
US6783434B1 (en) * 1998-12-25 2004-08-31 Hitachi Chemical Company, Ltd. CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate
KR100451499B1 (ko) * 1998-12-28 2004-12-13 주식회사 하이닉스반도체 반도체소자의소자분리막형성방법
US6409936B1 (en) 1999-02-16 2002-06-25 Micron Technology, Inc. Composition and method of formation and use therefor in chemical-mechanical polishing
US6426295B1 (en) * 1999-02-16 2002-07-30 Micron Technology, Inc. Reduction of surface roughness during chemical mechanical planarization(CMP)
US6551933B1 (en) 1999-03-25 2003-04-22 Beaver Creek Concepts Inc Abrasive finishing with lubricant and tracking
US6752844B2 (en) * 1999-03-29 2004-06-22 Intel Corporation Ceric-ion slurry for use in chemical-mechanical polishing
KR100366619B1 (ko) * 1999-05-12 2003-01-09 삼성전자 주식회사 트랜치 소자분리방법, 트랜치를 포함하는 반도체소자의제조방법 및 그에 따라 제조된 반도체소자
US6251150B1 (en) * 1999-05-27 2001-06-26 Ekc Technology, Inc. Slurry composition and method of chemical mechanical polishing using same
US6153526A (en) * 1999-05-27 2000-11-28 Taiwan Semiconductor Manufacturing Company Method to remove residue in wolfram CMP
US6234875B1 (en) 1999-06-09 2001-05-22 3M Innovative Properties Company Method of modifying a surface
US6238450B1 (en) 1999-06-16 2001-05-29 Saint-Gobain Industrial Ceramics, Inc. Ceria powder
TW486514B (en) * 1999-06-16 2002-05-11 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
EP1691401B1 (en) * 1999-06-18 2012-06-13 Hitachi Chemical Co., Ltd. Method for polishing a substrate using CMP abrasive
TWI227726B (en) 1999-07-08 2005-02-11 Eternal Chemical Co Ltd Chemical-mechanical abrasive composition and method
US6221119B1 (en) * 1999-07-14 2001-04-24 Komag, Inc. Slurry composition for polishing a glass ceramic substrate
US6602111B1 (en) * 1999-07-16 2003-08-05 Seimi Chemical Co., Ltd. Abrasive
CN1107097C (zh) * 1999-07-28 2003-04-30 长兴化学工业股份有限公司 化学机械研磨组合物及方法
US6429133B1 (en) * 1999-08-31 2002-08-06 Micron Technology, Inc. Composition compatible with aluminum planarization and methods therefore
CN1125862C (zh) * 1999-09-20 2003-10-29 长兴化学工业股份有限公司 半导体加工用化学机械研磨组合物
US6468910B1 (en) * 1999-12-08 2002-10-22 Ramanathan Srinivasan Slurry for chemical mechanical polishing silicon dioxide
US6491843B1 (en) 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
WO2001044402A1 (en) * 1999-12-17 2001-06-21 Cabot Microelectronics Corporation Method of polishing or planarizing a substrate
US6358850B1 (en) * 1999-12-23 2002-03-19 International Business Machines Corporation Slurry-less chemical-mechanical polishing of oxide materials
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
US6733553B2 (en) 2000-04-13 2004-05-11 Showa Denko Kabushiki Kaisha Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same
TW586157B (en) * 2000-04-13 2004-05-01 Showa Denko Kk Slurry composition for polishing semiconductor device, and method for manufacturing semiconductor device using the same
TWI268286B (en) * 2000-04-28 2006-12-11 Kao Corp Roll-off reducing agent
KR100378180B1 (ko) * 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
CN1197930C (zh) * 2000-07-19 2005-04-20 花王株式会社 抛光液组合物
US6702954B1 (en) * 2000-10-19 2004-03-09 Ferro Corporation Chemical-mechanical polishing slurry and method
US6413869B1 (en) * 2000-11-06 2002-07-02 Advanced Micro Devices, Inc. Dielectric protected chemical-mechanical polishing in integrated circuit interconnects
DE10063491A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Saure Polierslurry für das chemisch-mechanische Polieren von SiO¶2¶-Isolationsschichten
EP1369906B1 (en) * 2001-02-20 2012-06-27 Hitachi Chemical Company, Ltd. Polishing compound and method for polishing substrate
US20070290166A1 (en) * 2001-03-14 2007-12-20 Liu Feng Q Method and composition for polishing a substrate
US6796883B1 (en) 2001-03-15 2004-09-28 Beaver Creek Concepts Inc Controlled lubricated finishing
US6540935B2 (en) * 2001-04-05 2003-04-01 Samsung Electronics Co., Ltd. Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
KR100464429B1 (ko) * 2002-08-16 2005-01-03 삼성전자주식회사 화학 기계적 폴리싱 슬러리 및 이를 사용한 화학 기계적폴리싱 방법
JP4002740B2 (ja) * 2001-05-29 2007-11-07 三井金属鉱業株式会社 セリウム系研摩材の製造方法
US6811470B2 (en) 2001-07-16 2004-11-02 Applied Materials Inc. Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
US6677239B2 (en) 2001-08-24 2004-01-13 Applied Materials Inc. Methods and compositions for chemical mechanical polishing
WO2003020839A1 (en) * 2001-09-03 2003-03-13 Showa Denko K.K. Polishing composition
US7156717B2 (en) 2001-09-20 2007-01-02 Molnar Charles J situ finishing aid control
US6589100B2 (en) 2001-09-24 2003-07-08 Cabot Microelectronics Corporation Rare earth salt/oxidizer-based CMP method
US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
AU2002359356A1 (en) * 2001-11-16 2003-06-10 Ferro Corporation Particles for use in cmp slurries and method for producing them
US7666239B2 (en) * 2001-11-16 2010-02-23 Ferro Corporation Hydrothermal synthesis of cerium-titanium oxide for use in CMP
US6596042B1 (en) 2001-11-16 2003-07-22 Ferro Corporation Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process
US20060032836A1 (en) * 2001-11-16 2006-02-16 Ferro Corporation Methods of controlling the properties of abrasive particles for use in chemical-mechanical polishing slurries
KR100474540B1 (ko) * 2002-06-24 2005-03-10 주식회사 하이닉스반도체 반도체소자의 금속배선 콘택플러그 형성방법
US20030138201A1 (en) * 2002-01-18 2003-07-24 Cabot Microelectronics Corp. Self-aligned lens formed on a single mode optical fiber using CMP and thin film deposition
US7199056B2 (en) * 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
US7513920B2 (en) * 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
KR100442873B1 (ko) * 2002-02-28 2004-08-02 삼성전자주식회사 화학적 기계적 폴리싱 슬러리 및 이를 사용한 화학적기계적 폴리싱 방법
JP2003313542A (ja) * 2002-04-22 2003-11-06 Jsr Corp 化学機械研磨用水系分散体
US7677956B2 (en) * 2002-05-10 2010-03-16 Cabot Microelectronics Corporation Compositions and methods for dielectric CMP
KR100457743B1 (ko) * 2002-05-17 2004-11-18 주식회사 하이닉스반도체 산화막용 ｃｍｐ 슬러리 및 이를 이용한 반도체 소자의형성 방법
KR100474545B1 (ko) * 2002-05-17 2005-03-08 주식회사 하이닉스반도체 플래쉬 메모리 소자의 형성 방법
US6616514B1 (en) 2002-06-03 2003-09-09 Ferro Corporation High selectivity CMP slurry
US20040007690A1 (en) * 2002-07-12 2004-01-15 Cabot Microelectronics Corp. Methods for polishing fiber optic connectors
US20040127045A1 (en) * 2002-09-12 2004-07-01 Gorantla Venkata R. K. Chemical mechanical planarization of wafers or films using fixed polishing pads and a nanoparticle composition
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
US20040123528A1 (en) * 2002-12-30 2004-07-01 Jung Jong Goo CMP slurry for semiconductor device, and method for manufacturing semiconductor device using the same
JPWO2004061925A1 (ja) * 2002-12-31 2006-05-18 株式会社Sumco 化学的機械研磨用スラリー組成物、これを利用した半導体素子の表面平坦化方法及びスラリー組成物の選択比制御方法
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
TWI278507B (en) * 2003-05-28 2007-04-11 Hitachi Chemical Co Ltd Polishing agent and polishing method
US20040259366A1 (en) * 2003-06-20 2004-12-23 Kim Seong Han Method and composition for the chemical-vibrational-mechanical planarization of copper
KR101053653B1 (ko) * 2003-07-01 2011-08-02 주식회사 동진쎄미켐 산화세륨 연마제를 이용한 화학 기계적 연마 슬러리조성물
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
JP4574140B2 (ja) * 2003-08-27 2010-11-04 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いる研磨方法
ATE463838T1 (de) * 2003-09-30 2010-04-15 Fujimi Inc Polierzusammensetzung und polierverfahren
US6964600B2 (en) * 2003-11-21 2005-11-15 Praxair Technology, Inc. High selectivity colloidal silica slurry
JP4974447B2 (ja) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US7294575B2 (en) * 2004-01-05 2007-11-13 United Microelectronics Corp. Chemical mechanical polishing process for forming shallow trench isolation structure
JP2005268664A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2005268666A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP4316406B2 (ja) * 2004-03-22 2009-08-19 株式会社フジミインコーポレーテッド 研磨用組成物
JP4644434B2 (ja) * 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
KR100582771B1 (ko) * 2004-03-29 2006-05-22 한화석유화학 주식회사 반도체 얕은 트렌치 소자 분리 공정용 화학적 기계적 연마슬러리
US7253111B2 (en) 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US20050279733A1 (en) * 2004-06-18 2005-12-22 Cabot Microelectronics Corporation CMP composition for improved oxide removal rate
US20060064335A1 (en) * 2004-08-17 2006-03-23 International Business Machines Corporation Method, system, and storage medium for performing business process modeling
JP2006086462A (ja) * 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法
US20070218811A1 (en) * 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
US20060088976A1 (en) * 2004-10-22 2006-04-27 Applied Materials, Inc. Methods and compositions for chemical mechanical polishing substrates
JP2006135072A (ja) * 2004-11-05 2006-05-25 Fujimi Inc 研磨方法
US20060097219A1 (en) * 2004-11-08 2006-05-11 Applied Materials, Inc. High selectivity slurry compositions for chemical mechanical polishing
TWI323741B (en) * 2004-12-16 2010-04-21 K C Tech Co Ltd Abrasive particles, polishing slurry, and producing method thereof
KR100670538B1 (ko) 2004-12-30 2007-01-16 매그나칩 반도체 유한회사 광 특성을 향상시킬 수 있는 이미지센서 및 그 제조 방법
TWI403574B (zh) * 2005-01-05 2013-08-01 Nitta Haas Inc Grinding slurry
KR100724287B1 (ko) * 2005-01-12 2007-06-04 제일모직주식회사 산화물 침식 특성이 우수한 금속배선 연마용 슬러리 조성물
US20060166458A1 (en) * 2005-01-26 2006-07-27 Yi-Lung Cheng Method for forming shallow trench isolation structures
JP4528164B2 (ja) * 2005-03-11 2010-08-18 関東化学株式会社 エッチング液組成物
WO2006105020A1 (en) * 2005-03-25 2006-10-05 Dupont Air Products Nanomaterials Llc Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
US20090286678A1 (en) * 2005-05-02 2009-11-19 Symyx Technologies, Inc. High Surface Area Metal And Metal Oxide Materials and Methods of Making the Same
KR100641348B1 (ko) * 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
JP2006339594A (ja) * 2005-06-06 2006-12-14 Seimi Chem Co Ltd 半導体用研磨剤
DE112006002323T5 (de) * 2005-09-02 2008-07-10 Fujimi Incorporated, Kiyosu Poliermittel
JP5026710B2 (ja) * 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
KR100643628B1 (ko) 2005-11-04 2006-11-10 제일모직주식회사 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법
US8512593B2 (en) * 2005-11-04 2013-08-20 Cheil Industries, Inc. Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same
KR100812052B1 (ko) * 2005-11-14 2008-03-10 주식회사 엘지화학 탄산세륨 분말, 산화세륨 분말, 그 제조방법, 및 이를포함하는 ｃｍｐ 슬러리
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride
CN102633288A (zh) * 2006-04-21 2012-08-15 日立化成工业株式会社 氧化物粒子的制造方法、浆料、研磨剂和基板的研磨方法
US7510974B2 (en) * 2006-05-05 2009-03-31 United Microelectronics Corp. CMP process
CN100578739C (zh) * 2006-05-17 2010-01-06 联华电子股份有限公司 化学机械抛光的方法
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
US7294576B1 (en) * 2006-06-29 2007-11-13 Cabot Microelectronics Corporation Tunable selectivity slurries in CMP applications
SG139699A1 (en) * 2006-08-02 2008-02-29 Fujimi Inc Polishing composition and polishing process
US10435639B2 (en) 2006-09-05 2019-10-08 Cerion, Llc Fuel additive containing lattice engineered cerium dioxide nanoparticles
EP2074201A4 (en) * 2006-09-05 2011-09-14 Cerion Technology Inc METHOD FOR CONDITIONING A COMBUSTION ENGINE
US8883865B2 (en) 2006-09-05 2014-11-11 Cerion Technology, Inc. Cerium-containing nanoparticles
US20080135520A1 (en) * 2006-12-12 2008-06-12 Tao Sun Chemical composition for chemical mechanical planarization
JP5274487B2 (ja) 2007-03-16 2013-08-28 エルジー・ケム・リミテッド 炭酸セリウム粉末の製造方法
JP2008235481A (ja) * 2007-03-19 2008-10-02 Nippon Chem Ind Co Ltd 半導体ウエハ研磨用組成物、その製造方法、及び研磨加工方法
JP5371207B2 (ja) * 2007-06-08 2013-12-18 富士フイルム株式会社 研磨液及び研磨方法
JP2009164186A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
JP2009164188A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
WO2009088945A1 (en) * 2007-12-31 2009-07-16 Innopad, Inc. Chemical-mechanical planarization pad
JP5375025B2 (ja) * 2008-02-27 2013-12-25 日立化成株式会社 研磨液
US9548211B2 (en) * 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
CN102101981B (zh) * 2009-12-18 2014-08-20 安集微电子（上海）有限公司 一种用于介质材料平坦化的抛光液
WO2011111421A1 (ja) 2010-03-12 2011-09-15 日立化成工業株式会社 スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法
US8961815B2 (en) 2010-07-01 2015-02-24 Planar Solutions, Llc Composition for advanced node front-and back-end of line chemical mechanical polishing
JP6196155B2 (ja) * 2010-09-08 2017-09-13 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 水性研磨剤組成物、並びに電気、機械及び光学デバイス用の基板材料を研磨する方法
WO2012032466A1 (en) 2010-09-08 2012-03-15 Basf Se Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts
SG10201606566SA (en) 2010-09-08 2016-09-29 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
US8497210B2 (en) 2010-10-04 2013-07-30 International Business Machines Corporation Shallow trench isolation chemical mechanical planarization
KR20130129400A (ko) 2010-11-22 2013-11-28 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR20130129396A (ko) 2010-11-22 2013-11-28 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
WO2012077063A1 (en) 2010-12-10 2012-06-14 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
EP2658943B1 (en) 2010-12-28 2021-03-03 Saint-Gobain Ceramics & Plastics, Inc. Polishing slurry including zirconia particles and a method of using the polishing slurry
WO2012102180A1 (ja) * 2011-01-27 2012-08-02 株式会社 フジミインコーポレーテッド 研磨材及び研磨用組成物
CN102956535B (zh) * 2011-08-24 2015-05-13 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
WO2013125445A1 (ja) 2012-02-21 2013-08-29 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
JP6044630B2 (ja) 2012-02-21 2016-12-14 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
US10549399B2 (en) 2012-05-22 2020-02-04 Hitachi Chemcial Company, Ltd. Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
KR102034329B1 (ko) 2012-05-22 2019-10-18 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
WO2013175857A1 (ja) * 2012-05-22 2013-11-28 日立化成株式会社 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体
US9932497B2 (en) 2012-05-22 2018-04-03 Hitachi Chemical Company, Ltd. Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
CN103896321A (zh) * 2012-12-28 2014-07-02 上海新安纳电子科技有限公司 一种氧化铈复合颗粒及其制备方法和应用
US8920667B2 (en) * 2013-01-30 2014-12-30 Cabot Microelectronics Corporation Chemical-mechanical polishing composition containing zirconia and metal oxidizer
US8906252B1 (en) * 2013-05-21 2014-12-09 Cabot Microelelctronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US9434859B2 (en) * 2013-09-24 2016-09-06 Cabot Microelectronics Corporation Chemical-mechanical planarization of polymer films
US9279067B2 (en) 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
WO2015058037A1 (en) 2013-10-17 2015-04-23 Cerion, Llc Malic acid stabilized nanoceria particles
US9422457B2 (en) * 2014-06-25 2016-08-23 Cabot Microelectronics Corporation Colloidal silica chemical-mechanical polishing concentrate
EP3161098B1 (en) * 2014-06-25 2022-10-26 CMC Materials, Inc. Tungsten chemical-mechanical polishing composition
CN104403575B (zh) * 2014-12-23 2016-09-21 包头市华辰稀土材料有限公司 一种高精度氧化铝抛光粉的制备方法
US10414947B2 (en) * 2015-03-05 2019-09-17 Cabot Microelectronics Corporation Polishing composition containing ceria particles and method of use
US10946494B2 (en) * 2015-03-10 2021-03-16 Showa Denko Materials Co., Ltd. Polishing agent, stock solution for polishing agent, and polishing method
CN108076668B (zh) 2015-09-30 2019-05-14 福吉米株式会社 研磨用组合物
WO2017155669A1 (en) 2016-03-11 2017-09-14 Fujifilm Planar Solutions, LLC Advanced fluid processing methods and systems
JPWO2018012175A1 (ja) 2016-07-15 2019-05-30 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法および研磨方法
JPWO2018012173A1 (ja) 2016-07-15 2019-05-30 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法および研磨方法
CN106381068A (zh) * 2016-08-31 2017-02-08 常熟市光学仪器有限责任公司 用于加工无色光学玻璃的抛光液
WO2019043819A1 (ja) * 2017-08-30 2019-03-07 日立化成株式会社 スラリ及び研磨方法
US10763119B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US10759970B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US11326076B2 (en) 2019-01-25 2022-05-10 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives
US11608451B2 (en) 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
US20200270479A1 (en) 2019-02-26 2020-08-27 Versum Materials Us, Llc Shallow Trench Isolation Chemical And Mechanical Polishing Slurry
US11499072B2 (en) 2019-08-30 2022-11-15 Saint-Gobain Ceramics & Plastics, Inc. Composition and method for conducting a material removing operation
JP7361204B2 (ja) 2019-08-30 2023-10-13 サン－ゴバン セラミックス アンド プラスティクス，インコーポレイティド 材料除去作業を行うための流体組成物及び方法
EP4069794A4 (en) 2019-12-04 2024-01-10 Versum Materials US, LLC CHEMICAL-MECHANICAL PLANARISATION (CMP) POLISHING (WITH HIGH OXIDE REMOVAL RATE AND SHALL TRENCH ISOLATION (STI)
CN113122139B (zh) * 2019-12-30 2024-04-05 安集微电子科技（上海）股份有限公司 一种化学机械抛光液及其使用方法
WO2021242755A1 (en) 2020-05-29 2021-12-02 Versum Materials Us, Llc Low dishing oxide cmp polishing compositions for shallow trench isolation applications and methods of making thereof
CN115386300B (zh) * 2022-08-22 2023-09-19 万华化学集团电子材料有限公司 一种适用于硅晶圆再生的抛光组合物、制备方法及其应用
CN116948531A (zh) * 2023-05-10 2023-10-27 深圳市拉达特科技有限公司 一种集成电路铜化学机械抛光组合物及其制备方法、用途

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4383857A (en) 1980-05-28 1983-05-17 The United States Of America As Represented By The United States Department Of Energy Attack polish for nickel-base alloys and stainless steels
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
FR2604443A1 (fr) 1986-09-26 1988-04-01 Rhone Poulenc Chimie Composition de polissage a base de cerium destinee au polissage des verres organiques
US4752628A (en) * 1987-05-15 1988-06-21 Nalco Chemical Company Concentrated lapping slurries
US4867757A (en) * 1988-09-09 1989-09-19 Nalco Chemical Company Lapping slurry compositions with improved lap rate
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
JP2868885B2 (ja) * 1989-11-09 1999-03-10 新日本製鐵株式会社 シリコンウェハの研磨液及び研磨方法
US5114437A (en) * 1990-08-28 1992-05-19 Sumitomo Chemical Co., Ltd. Polishing composition for metallic material
US5244534A (en) * 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
US5264010A (en) * 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
US5225034A (en) * 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5389352A (en) * 1993-07-21 1995-02-14 Rodel, Inc. Oxide particles and method for producing them
US5382272A (en) * 1993-09-03 1995-01-17 Rodel, Inc. Activated polishing compositions
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JP3430733B2 (ja) * 1994-09-30 2003-07-28 株式会社日立製作所 研磨剤及び研磨方法
KR960041316A (ko) * 1995-05-22 1996-12-19 고사이 아키오 연마용 입상체, 이의 제조방법 및 이의 용도
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US5863838A (en) * 1996-07-22 1999-01-26 Motorola, Inc. Method for chemically-mechanically polishing a metal layer
KR19980019046A (ko) * 1996-08-29 1998-06-05 고사이 아키오 연마용 조성물 및 이의 용도(Abrasive composition and use of the same)
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5773364A (en) * 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US20030104770A1 (en) * 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials

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US20040089634A1 (en) 2004-05-13
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EP0963419B1 (en) 2004-04-14
US6689692B1 (en) 2004-02-10
WO1998029515A1 (en) 1998-07-09
DE69728691D1 (de) 2004-05-19
ATE264378T1 (de) 2004-04-15
US6984588B2 (en) 2006-01-10
CN1248994A (zh) 2000-03-29
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