JP7361204B2 - 材料除去作業を行うための流体組成物及び方法 - Google Patents
材料除去作業を行うための流体組成物及び方法 Download PDFInfo
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- JP7361204B2 JP7361204B2 JP2022511269A JP2022511269A JP7361204B2 JP 7361204 B2 JP7361204 B2 JP 7361204B2 JP 2022511269 A JP2022511269 A JP 2022511269A JP 2022511269 A JP2022511269 A JP 2022511269A JP 7361204 B2 JP7361204 B2 JP 7361204B2
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- JP
- Japan
- Prior art keywords
- fluid composition
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- borate
- polyvalent metal
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/18—Other polishing compositions based on non-waxy substances on other substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/02—Light metals
- C23F3/03—Light metals with acidic solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/08—Compounds containing boron and nitrogen, phosphorus, oxygen, sulfur, selenium or tellurium
- C01B35/10—Compounds containing boron and oxygen
- C01B35/12—Borates
- C01B35/127—Borates of heavy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Description
実施形態1.多価金属ホウ酸塩、少なくとも1つの酸化剤、及び溶媒を含む、流体組成物。
2.5g(6.19mmol)の硝酸鉄(III)九水和物(Fe(NO3)3 9H2O)、2.5g(40.3mmol)のホウ酸(H3BO3)、及び40.0g(253.2mmol)の過マンガン酸カリウム(KMnO4)を、撹拌しながら蒸留水955mL中に溶解することによって、水性流体組成物(S1)を調製した。全ての成分を合わせた後、pHを1N HNO3でpH2.1に調整した。成分のモル量に従って、Fe3+イオン対ホウ酸イオン(BO3 3-)のモル比は、1:6.5であった。
本開示の例の全ての流体組成物を、Cabot製D100研磨パッドを備えたStrasbaugh 6EC片面研磨ツールを用いて、4Hタイプ炭化ケイ素(軸外4°)ウェハを研磨する材料除去速度に対するそれらの影響について試験した。炭化ケイ素ウェハは、直径150mm及び厚さ350μmであった。材料除去速度は、Ohaus Explorer Model FX324精密スケールで測定した重量損失から算出した。
研磨は以下の条件下において行った。
Claims (12)
- 多価金属ホウ酸塩、少なくとも1つの酸化剤、及び溶媒を含む、流体組成物であって、
前記多価金属ホウ酸塩が、ホウ酸鉄(III)、ホウ酸銅(II)、又はそれらの任意の組合せを含み、
前記酸化剤が、過マンガン酸塩を含む、流体組成物。 - 前記多価金属ホウ酸塩が、ホウ酸鉄(III)から本質的になる、請求項1に記載の流体組成物。
- 前記流体組成物が、研磨粒子を本質的に含まない、請求項1~2のいずれか一項に記載の流体組成物。
- 前記多価金属ホウ酸塩の量が、前記流体組成物の総重量に基づいて少なくとも0.01重量%、且つ前記流体組成物の総重量に基づいて20重量%以下である、請求項1~2のいずれか一項に記載の流体組成物。
- 前記流体組成物の多価金属イオン対ホウ素のモル比が、1:1~1:7の範囲である、請求項1~2のいずれか一項に記載の流体組成物。
- 前記酸化剤が、過マンガン酸カリウムを含む、請求項1または2に記載の流体組成物。
- 前記流体組成物が、基板の化学機械研磨に適合している、請求項1~2のいずれか一項に記載の流体組成物。
- 前記基板が、III-V族化合物又はIV-IV族化合物を含む、請求項7に記載の流体組成物。
- 基板を研磨する方法であって、
流体組成物が、多価金属ホウ酸塩、少なくとも1つの酸化剤、及び水を含む、前記流体組成物を提供することと、
前記流体組成物を前記基板及び研磨パッドに接触させることと、
前記基板を研磨することと、
を含み、
前記多価金属ホウ酸塩が、ホウ酸鉄(III)、ホウ酸銅(II)、又はそれらの任意の組合せを含み、前記酸化剤が、過マンガン酸塩を含む、前記方法。 - 前記流体組成物が、研磨粒子を本質的に含まない、請求項9に記載の方法。
- 前記流体組成物のpHが、5以下である、請求項9又は10に記載の方法。
- 請求項1に記載の流体組成物を調製するのに適したキットであって、前記キットが第1のパッケージ及び第2のパッケージを含み、前記第1のパッケージが多価金属塩を含み、前記多価金属塩のアニオンが、硝酸塩、臭化物、ヨウ化物、硫酸塩、リン酸塩、又はそれらの任意の組合せを含み、前記第2のパッケージがホウ酸を含み、前記第1のパッケージ又は前記第2のパッケージが、前記酸化剤を更に含む、前記キット。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962894050P | 2019-08-30 | 2019-08-30 | |
US62/894,050 | 2019-08-30 | ||
PCT/US2020/048230 WO2021041699A1 (en) | 2019-08-30 | 2020-08-27 | Fluid composition and method for conducting a material removing operation |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022545104A JP2022545104A (ja) | 2022-10-25 |
JP7361204B2 true JP7361204B2 (ja) | 2023-10-13 |
Family
ID=74682060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022511269A Active JP7361204B2 (ja) | 2019-08-30 | 2020-08-27 | 材料除去作業を行うための流体組成物及び方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11518913B2 (ja) |
EP (1) | EP4022002A4 (ja) |
JP (1) | JP7361204B2 (ja) |
KR (1) | KR20220054355A (ja) |
CN (1) | CN114286846B (ja) |
WO (1) | WO2021041699A1 (ja) |
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2020
- 2020-08-27 JP JP2022511269A patent/JP7361204B2/ja active Active
- 2020-08-27 CN CN202080061045.3A patent/CN114286846B/zh active Active
- 2020-08-27 EP EP20857397.2A patent/EP4022002A4/en active Pending
- 2020-08-27 US US17/004,988 patent/US11518913B2/en active Active
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Also Published As
Publication number | Publication date |
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TW202108716A (zh) | 2021-03-01 |
EP4022002A4 (en) | 2023-08-23 |
EP4022002A1 (en) | 2022-07-06 |
US11518913B2 (en) | 2022-12-06 |
JP2022545104A (ja) | 2022-10-25 |
KR20220054355A (ko) | 2022-05-02 |
CN114286846B (zh) | 2023-06-06 |
WO2021041699A1 (en) | 2021-03-04 |
CN114286846A (zh) | 2022-04-05 |
US20210062045A1 (en) | 2021-03-04 |
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