ATE463838T1 - Polierzusammensetzung und polierverfahren - Google Patents

Polierzusammensetzung und polierverfahren

Info

Publication number
ATE463838T1
ATE463838T1 AT04788401T AT04788401T ATE463838T1 AT E463838 T1 ATE463838 T1 AT E463838T1 AT 04788401 T AT04788401 T AT 04788401T AT 04788401 T AT04788401 T AT 04788401T AT E463838 T1 ATE463838 T1 AT E463838T1
Authority
AT
Austria
Prior art keywords
polishing
polishing composition
trench
positioned outside
anticorrosive
Prior art date
Application number
AT04788401T
Other languages
English (en)
Inventor
Tsuyoshi Matsuda
Tatsuhiko Hirano
Junhui Oh
Atsunori Kawamura
Kenji Sakai
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003342532A external-priority patent/JP4541674B2/ja
Priority claimed from JP2003358551A external-priority patent/JP2005123482A/ja
Application filed by Fujimi Inc filed Critical Fujimi Inc
Application granted granted Critical
Publication of ATE463838T1 publication Critical patent/ATE463838T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Disintegrating Or Milling (AREA)
AT04788401T 2003-09-30 2004-09-30 Polierzusammensetzung und polierverfahren ATE463838T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003342532A JP4541674B2 (ja) 2003-09-30 2003-09-30 研磨用組成物
JP2003358551A JP2005123482A (ja) 2003-10-17 2003-10-17 研磨方法
PCT/JP2004/014373 WO2005031836A1 (ja) 2003-09-30 2004-09-30 研磨用組成物及び研磨方法

Publications (1)

Publication Number Publication Date
ATE463838T1 true ATE463838T1 (de) 2010-04-15

Family

ID=34395638

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04788401T ATE463838T1 (de) 2003-09-30 2004-09-30 Polierzusammensetzung und polierverfahren

Country Status (8)

Country Link
US (1) US20070176140A1 (de)
EP (1) EP1670047B1 (de)
KR (1) KR101110723B1 (de)
CN (1) CN100435290C (de)
AT (1) ATE463838T1 (de)
DE (1) DE602004026454D1 (de)
TW (1) TW200526768A (de)
WO (1) WO2005031836A1 (de)

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KR20080078840A (ko) * 2005-12-21 2008-08-28 아사히 가라스 가부시키가이샤 연마용 조성물, 연마 방법 및 반도체 집적 회로용 구리배선의 제조 방법
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CN101665662A (zh) * 2008-09-05 2010-03-10 安集微电子科技(上海)有限公司 一种化学机械抛光液
CN101429318B (zh) * 2008-10-09 2011-03-23 孙泉根 富含水性聚乙烯醇研磨擦拭块及其制造方法
JP5568641B2 (ja) 2009-10-13 2014-08-06 エルジー・ケム・リミテッド Ｃｍｐ用スラリー組成物及び研磨方法
JP5587620B2 (ja) * 2010-01-25 2014-09-10 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
CN107474799B (zh) 2010-03-12 2020-12-29 昭和电工材料株式会社 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法
US9881801B2 (en) 2010-11-22 2018-01-30 Hitachi Chemical Company, Ltd. Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
SG11201405091TA (en) 2012-02-21 2014-09-26 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
KR102004570B1 (ko) 2012-02-21 2019-07-26 히타치가세이가부시끼가이샤 연마제, 연마제 세트 및 기체의 연마 방법
WO2013175859A1 (ja) 2012-05-22 2013-11-28 日立化成株式会社 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体
JP5943072B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
US9039914B2 (en) * 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
JP6325441B2 (ja) * 2012-07-17 2018-05-16 株式会社フジミインコーポレーテッド 合金材料研磨用組成物及びそれを用いた合金材料の製造方法
DE112013005718B4 (de) 2012-11-30 2016-05-25 Nitta Haas Incorporated Polierzusammensetzung
DE102013016889B4 (de) * 2013-10-11 2016-10-13 Clariant International Ltd. Wässrige, bindemittelfreie Pigmentpräparationen und deren Verwendungen
WO2017150118A1 (ja) 2016-02-29 2017-09-08 株式会社フジミインコーポレーテッド 研磨用組成物およびこれを用いた研磨方法
SG10201904669TA (en) 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
CN113122145A (zh) * 2019-12-31 2021-07-16 安集微电子（上海）有限公司 一种化学机械抛光液

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JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
JP2003124158A (ja) * 2001-10-16 2003-04-25 Sumitomo Bakelite Co Ltd 研磨用組成物
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JP3981616B2 (ja) * 2002-10-02 2007-09-26 株式会社フジミインコーポレーテッド 研磨用組成物
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Also Published As

Publication number Publication date
EP1670047A4 (de) 2008-09-03
TWI354696B (de) 2011-12-21
KR20060089220A (ko) 2006-08-08
WO2005031836A1 (ja) 2005-04-07
KR101110723B1 (ko) 2012-06-13
CN1860592A (zh) 2006-11-08
CN100435290C (zh) 2008-11-19
DE602004026454D1 (de) 2010-05-20
EP1670047B1 (de) 2010-04-07
EP1670047A1 (de) 2006-06-14
US20070176140A1 (en) 2007-08-02
TW200526768A (en) 2005-08-16

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Legal Events

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