ATE463838T1 - Polierzusammensetzung und polierverfahren - Google Patents

Polierzusammensetzung und polierverfahren

Info

Publication number
ATE463838T1
ATE463838T1 AT04788401T AT04788401T ATE463838T1 AT E463838 T1 ATE463838 T1 AT E463838T1 AT 04788401 T AT04788401 T AT 04788401T AT 04788401 T AT04788401 T AT 04788401T AT E463838 T1 ATE463838 T1 AT E463838T1
Authority
AT
Austria
Prior art keywords
polishing
polishing composition
trench
positioned outside
anticorrosive
Prior art date
Application number
AT04788401T
Other languages
English (en)
Inventor
Tsuyoshi Matsuda
Tatsuhiko Hirano
Junhui Oh
Atsunori Kawamura
Kenji Sakai
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003342532A external-priority patent/JP4541674B2/ja
Priority claimed from JP2003358551A external-priority patent/JP2005123482A/ja
Application filed by Fujimi Inc filed Critical Fujimi Inc
Application granted granted Critical
Publication of ATE463838T1 publication Critical patent/ATE463838T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Disintegrating Or Milling (AREA)
AT04788401T 2003-09-30 2004-09-30 Polierzusammensetzung und polierverfahren ATE463838T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003342532A JP4541674B2 (ja) 2003-09-30 2003-09-30 研磨用組成物
JP2003358551A JP2005123482A (ja) 2003-10-17 2003-10-17 研磨方法
PCT/JP2004/014373 WO2005031836A1 (ja) 2003-09-30 2004-09-30 研磨用組成物及び研磨方法

Publications (1)

Publication Number Publication Date
ATE463838T1 true ATE463838T1 (de) 2010-04-15

Family

ID=34395638

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04788401T ATE463838T1 (de) 2003-09-30 2004-09-30 Polierzusammensetzung und polierverfahren

Country Status (8)

Country Link
US (1) US20070176140A1 (de)
EP (1) EP1670047B1 (de)
KR (1) KR101110723B1 (de)
CN (1) CN100435290C (de)
AT (1) ATE463838T1 (de)
DE (1) DE602004026454D1 (de)
TW (1) TW200526768A (de)
WO (1) WO2005031836A1 (de)

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JP4644434B2 (ja) 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP2006086462A (ja) * 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法
CN102863943B (zh) * 2005-08-30 2015-03-25 花王株式会社 硬盘用基板用研磨液组合物、基板的研磨方法和制造方法
TW200738852A (en) * 2005-12-21 2007-10-16 Asahi Glass Co Ltd Polishing composition, polishing method, and method for forming copper wiring for semiconductor integrated circuit
US7837888B2 (en) * 2006-11-13 2010-11-23 Cabot Microelectronics Corporation Composition and method for damascene CMP
DE102006056624B4 (de) * 2006-11-30 2012-03-29 Globalfoundries Inc. Verfahren zur Herstellung einer selbstjustierten CuSiN-Deckschicht in einem Mikrostrukturbauelement
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
CN101665662A (zh) * 2008-09-05 2010-03-10 安集微电子科技(上海)有限公司 一种化学机械抛光液
CN101429318B (zh) * 2008-10-09 2011-03-23 孙泉根 富含水性聚乙烯醇研磨擦拭块及其制造方法
WO2011049318A2 (ko) * 2009-10-13 2011-04-28 주식회사 엘지화학 Cmp용 슬러리 조성물 및 연마방법
JP5587620B2 (ja) * 2010-01-25 2014-09-10 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP5582187B2 (ja) 2010-03-12 2014-09-03 日立化成株式会社 スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法
CN103222036B (zh) 2010-11-22 2016-11-09 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
US9346977B2 (en) * 2012-02-21 2016-05-24 Hitachi Chemical Company, Ltd. Abrasive, abrasive set, and method for abrading substrate
KR102005132B1 (ko) 2012-02-21 2019-07-29 히타치가세이가부시끼가이샤 연마제, 연마제 세트 및 기체의 연마 방법
KR102034328B1 (ko) 2012-05-22 2019-10-18 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
WO2013175859A1 (ja) 2012-05-22 2013-11-28 日立化成株式会社 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体
US9039914B2 (en) * 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
US20150166862A1 (en) * 2012-07-17 2015-06-18 Fujimi Incorporated Composition for polishing alloy material and method for producing alloy material using same
MY154603A (en) 2012-11-30 2015-07-01 Nitta Haas Inc Polishing composition
DE102013016889B4 (de) * 2013-10-11 2016-10-13 Clariant International Ltd. Wässrige, bindemittelfreie Pigmentpräparationen und deren Verwendungen
US11332640B2 (en) 2016-02-29 2022-05-17 Fujimi Incorporated Polishing composition and polishing method using same
SG10201904669TA (en) * 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
CN113122145A (zh) * 2019-12-31 2021-07-16 安集微电子（上海）有限公司 一种化学机械抛光液

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JP4816836B2 (ja) * 1998-12-28 2011-11-16 日立化成工業株式会社 金属用研磨液及びそれを用いた研磨方法
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US6573173B2 (en) * 1999-07-13 2003-06-03 Motorola, Inc. Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
JP2001031953A (ja) * 1999-07-19 2001-02-06 Tokuyama Corp 金属膜用研磨剤
DE60039996D1 (de) * 1999-08-13 2008-10-02 Cabot Microelectronics Corp Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
US6503418B2 (en) * 1999-11-04 2003-01-07 Advanced Micro Devices, Inc. Ta barrier slurry containing an organic additive
WO2001074958A2 (de) * 2000-03-31 2001-10-11 Bayer Aktiengesellschaft Poliermittel und verfahren zur herstellung planarer schichten
JP3837277B2 (ja) * 2000-06-30 2006-10-25 株式会社東芝 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法
JP4253141B2 (ja) * 2000-08-21 2009-04-08 株式会社東芝 化学機械研磨用スラリおよび半導体装置の製造方法
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JP2002164307A (ja) * 2000-11-24 2002-06-07 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
JP2003124158A (ja) * 2001-10-16 2003-04-25 Sumitomo Bakelite Co Ltd 研磨用組成物
US20030219982A1 (en) * 2002-05-23 2003-11-27 Hitachi Chemical Co., Ltd CMP (chemical mechanical polishing) polishing liquid for metal and polishing method
US20040162011A1 (en) * 2002-08-02 2004-08-19 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device
JP4083502B2 (ja) * 2002-08-19 2008-04-30 株式会社フジミインコーポレーテッド 研磨方法及びそれに用いられる研磨用組成物
JP3981616B2 (ja) * 2002-10-02 2007-09-26 株式会社フジミインコーポレーテッド 研磨用組成物
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Also Published As

Publication number Publication date
WO2005031836A1 (ja) 2005-04-07
EP1670047A1 (de) 2006-06-14
EP1670047A4 (de) 2008-09-03
KR101110723B1 (ko) 2012-06-13
TW200526768A (en) 2005-08-16
CN100435290C (zh) 2008-11-19
TWI354696B (de) 2011-12-21
DE602004026454D1 (de) 2010-05-20
CN1860592A (zh) 2006-11-08
KR20060089220A (ko) 2006-08-08
EP1670047B1 (de) 2010-04-07
US20070176140A1 (en) 2007-08-02

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Legal Events

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