SG10201904669TA - Polishing Slurry Composition - Google Patents
Polishing Slurry CompositionInfo
- Publication number
- SG10201904669TA SG10201904669TA SG10201904669TA SG10201904669TA SG10201904669TA SG 10201904669T A SG10201904669T A SG 10201904669TA SG 10201904669T A SG10201904669T A SG 10201904669TA SG 10201904669T A SG10201904669T A SG 10201904669TA SG 10201904669T A SG10201904669T A SG 10201904669TA
- Authority
- SG
- Singapore
- Prior art keywords
- slurry composition
- polishing slurry
- polishing
- composition
- slurry
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180074567A KR20200001724A (en) | 2018-06-28 | 2018-06-28 | Polishing slurry composition |
| KR1020180137610A KR102442600B1 (en) | 2018-11-09 | 2018-11-09 | Polishing slurry composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201904669TA true SG10201904669TA (en) | 2020-01-30 |
Family
ID=69007949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201904669TA SG10201904669TA (en) | 2018-06-28 | 2019-05-24 | Polishing Slurry Composition |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11279851B2 (en) |
| JP (1) | JP6941138B2 (en) |
| CN (1) | CN110655867A (en) |
| SG (1) | SG10201904669TA (en) |
| TW (1) | TWI808200B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112185606B (en) * | 2020-09-29 | 2022-04-01 | 深圳市法鑫忠信新材料有限公司 | High-molecular flexible conductive film and preparation method thereof |
| CN113355023B (en) * | 2021-05-31 | 2022-08-09 | 中南大学 | Preparation method of 4D printing NiTi alloy EBSD sample polishing solution, product and application |
Family Cites Families (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4684121B2 (en) | 1999-08-17 | 2011-05-18 | 日立化成工業株式会社 | Chemical mechanical polishing abrasive and substrate polishing method |
| CN1203529C (en) * | 1999-08-17 | 2005-05-25 | 日立化成工业株式会社 | Polishing compound for chemimachanical polishing and method for polishing substrate |
| JP4238951B2 (en) | 1999-09-28 | 2009-03-18 | 株式会社フジミインコーポレーテッド | Polishing composition and method for producing memory hard disk using the same |
| US6328774B1 (en) | 2000-02-23 | 2001-12-11 | Fujimi America Inc. | Polishing composition and method for producing a memory hard disk |
| US20030061766A1 (en) * | 2000-03-31 | 2003-04-03 | Kristina Vogt | Polishing agent and method for producing planar layers |
| JP4439755B2 (en) | 2001-03-29 | 2010-03-24 | 株式会社フジミインコーポレーテッド | Polishing composition and method for producing memory hard disk using the same |
| KR20030013181A (en) * | 2001-08-07 | 2003-02-14 | 삼성전자주식회사 | Microwave oven with rice cooking function and controlling method thereof |
| DE60332881D1 (en) | 2002-04-30 | 2010-07-15 | Hitachi Chemical Co Ltd | Polish and polishing process |
| TWI282360B (en) | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
| JP2004179294A (en) | 2002-11-26 | 2004-06-24 | Hitachi Chem Co Ltd | Polishing liquid and polishing method |
| JP2005064285A (en) | 2003-08-14 | 2005-03-10 | Hitachi Chem Co Ltd | Polishing solution and polishing method for cmp |
| JP4541674B2 (en) | 2003-09-30 | 2010-09-08 | 株式会社フジミインコーポレーテッド | Polishing composition |
| KR101110723B1 (en) | 2003-09-30 | 2012-06-13 | 가부시키가이샤 후지미인코퍼레이티드 | Polishing composition and polishing method |
| US7253111B2 (en) | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
| US7842193B2 (en) | 2005-09-29 | 2010-11-30 | Fujifilm Corporation | Polishing liquid |
| JP2007123826A (en) | 2005-09-29 | 2007-05-17 | Fujifilm Corp | Polishing liquid |
| JP2007154176A (en) | 2005-11-11 | 2007-06-21 | Hitachi Chem Co Ltd | Polishing liquid for polishing ito film and method for polishing substrate |
| KR101260597B1 (en) * | 2005-12-27 | 2013-05-06 | 히타치가세이가부시끼가이샤 | Metal polishing liquid and method for polishing film to be polished |
| WO2007095322A1 (en) | 2006-02-14 | 2007-08-23 | Cabot Microelectronics Corporation | Compositions and methods for cmp of indium tin oxide surfaces |
| JPWO2007116770A1 (en) | 2006-04-03 | 2009-08-20 | Jsr株式会社 | Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion |
| US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
| KR100823457B1 (en) | 2006-12-22 | 2008-04-21 | 테크노세미켐 주식회사 | Chemical mechanical polishing composition for copper comprising zeolite |
| CN101689494B (en) * | 2007-07-05 | 2013-09-25 | 日立化成株式会社 | Polishing liquid for metal film |
| JP5327050B2 (en) | 2007-07-30 | 2013-10-30 | 日立化成株式会社 | Polishing liquid for metal and polishing method |
| JP5188175B2 (en) * | 2007-12-28 | 2013-04-24 | 日揮触媒化成株式会社 | Silica sol and method for producing the same |
| CN102768954B (en) | 2008-04-16 | 2015-03-25 | 日立化成株式会社 | Polishing liquid for CMP and polishing method |
| CN101345806A (en) | 2008-08-15 | 2009-01-14 | 苏州佳世达电通有限公司 | Scanning method for automatically performing scanning extended function and its auxiliary device |
| JP5371416B2 (en) * | 2008-12-25 | 2013-12-18 | 富士フイルム株式会社 | Polishing liquid and polishing method |
| JP5648153B2 (en) | 2010-09-13 | 2015-01-07 | 熊本県 | Abrasive |
| WO2012102187A1 (en) | 2011-01-25 | 2012-08-02 | 日立化成工業株式会社 | Cmp polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material |
| US9633831B2 (en) * | 2013-08-26 | 2017-04-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same |
| US9303190B2 (en) * | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| MY186419A (en) * | 2014-03-28 | 2021-07-22 | Yamaguchi Seiken Kogyo Co Ltd | Polishing composition and method for polishing magnetic disk substrate |
| US20170183537A1 (en) | 2014-08-26 | 2017-06-29 | K.C. Tech Co., Ltd | Polishing slurry composition |
| KR101741707B1 (en) * | 2015-02-27 | 2017-05-30 | 유비머트리얼즈주식회사 | Polishing slurry and substrate polishing method using the same |
| US10160884B2 (en) | 2015-03-23 | 2018-12-25 | Versum Materials Us, Llc | Metal compound chemically anchored colloidal particles and methods of production and use thereof |
| KR20160121229A (en) * | 2015-04-10 | 2016-10-19 | 주식회사 케이씨텍 | Metal-substituted abrasive, method of preparing the same and polishing slurry composition comprising the metal-substituted abrasive |
| KR20160142995A (en) * | 2015-06-04 | 2016-12-14 | 주식회사 케이씨텍 | Slurry composition for semiconductor polishing |
| KR101682085B1 (en) * | 2015-07-09 | 2016-12-02 | 주식회사 케이씨텍 | Slurry composition for tungsten polishing |
| US10077381B2 (en) | 2015-07-20 | 2018-09-18 | Kctech Co., Ltd. | Polishing slurry composition |
| CN105839111A (en) | 2016-05-05 | 2016-08-10 | 西安热工研究院有限公司 | Mechanical polishing solution for preparing EBSD sample, preparation method and mechanical polishing method |
| US10253216B2 (en) * | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
| CN106398544A (en) | 2016-07-27 | 2017-02-15 | 清华大学 | A CMP polishing composition suitable for a gallium nitride material |
| JP6282708B2 (en) | 2016-10-07 | 2018-02-21 | 株式会社フジミインコーポレーテッド | Polishing composition, polishing method using the same, and manufacturing method thereof |
| JP7122097B2 (en) * | 2017-10-24 | 2022-08-19 | 山口精研工業株式会社 | Abrasive composition for magnetic disk substrate |
| JPWO2019181399A1 (en) * | 2018-03-23 | 2021-02-04 | 富士フイルム株式会社 | Polishing liquid and chemical mechanical polishing method |
| US20190352535A1 (en) * | 2018-05-21 | 2019-11-21 | Versum Materials Us, Llc | Chemical Mechanical Polishing Tungsten Buffing Slurries |
-
2019
- 2019-05-24 SG SG10201904669TA patent/SG10201904669TA/en unknown
- 2019-05-30 US US16/426,906 patent/US11279851B2/en active Active
- 2019-06-18 TW TW108121062A patent/TWI808200B/en active
- 2019-06-21 CN CN201910540392.3A patent/CN110655867A/en active Pending
- 2019-06-25 JP JP2019117121A patent/JP6941138B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6941138B2 (en) | 2021-09-29 |
| TW202000846A (en) | 2020-01-01 |
| JP2020002356A (en) | 2020-01-09 |
| TWI808200B (en) | 2023-07-11 |
| US20200002573A1 (en) | 2020-01-02 |
| CN110655867A (en) | 2020-01-07 |
| US11279851B2 (en) | 2022-03-22 |
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