KR20200001724A - Polishing slurry composition - Google Patents

Abstract

The present invention relates to a polishing slurry composition comprising: colloidal silica abrasive particles; a pH regulator; and a chelating agent and, more specifically, to a polishing slurry composition which can be free from or minimize scratchable defects in a polishing process.

Description

Polishing slurry composition {POLISHING SLURRY COMPOSITION}

The present invention relates to a polishing slurry composition for semiconductor devices and display devices.

Recently, in the semiconductor and display industries, many chemical mechanical polishing (CMP) processes of various thin films constituting devices have been required.

The chemical mechanical polishing (CMP) process refers to a process of smoothly polishing a surface of a semiconductor wafer using a slurry containing an abrasive and various compounds while rotating in contact with a polishing pad. In general, it is known that a metal polishing process is performed by repeatedly forming a metal oxide (MO _x ) by an oxidant and removing a metal oxide by the abrasive particles.

The polishing process of the tungsten layer, which is widely used for wiring of semiconductor devices, is also performed by a mechanism in which a process of forming tungsten oxide (WO ₃ ) by an oxidizing agent and a potential regulator and a process of removing tungsten oxide by the abrasive particles are repeated. In addition, an insulating film may be formed under the tungsten layer, or a pattern such as a trench may be formed. In this case, high polishing selectivity of the tungsten layer and the insulating film is required in the CMP process. Accordingly, in order to improve the polishing selectivity of tungsten with respect to the insulating film, various components are added to the slurry or the content of the oxidizing agent and the catalyst contained in the slurry is controlled. Despite these efforts, tungsten polishing slurries have not yet been developed which can improve the polishing performance by implementing a high polishing selectivity or adjusting the desired polishing selectivity.

In addition, indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO) are widely used as inorganic materials having high conductivity and light transmittance. It is used as a transparent electrode, an antistatic film, etc. in ITO thin film, display substrates and panels, such as an organic light emitting diode (OLED), a touch panel, and a solar cell. In general, to deposit an ITO thin film on a substrate, DC-Magnetron Sputtering, RF-Sputtering, Ion Beam Sputtering, e-Beam Evaporation, etc. Physical Vapor Deposition and Chemical Vapor Deposition such as Sol-Gel and Spray Pyrolysis are used, but the most widely used DC-magnetron sputtering is used. Since the prepared thin film has a high surface roughness of Rrms of 1 nm or more and Rpv of 20 nm or more, when it is applied to an organic light emitting diode, organic matters are damaged due to concentration of current density, resulting in defects such as sunspots, and nonuniform scratches of ITO thin film. Together with surface residues (foreign particles adsorbed on the surface of the ITO), they provide a current leakage path through the diode adjacent the ITO layer, resulting in crosstalk and low resistance. Can.

Attempts have been made to solve the above-mentioned problems through planarization of the ITO film. Representatively, there are ion beam sputtering and ion plating. However, the ion assisted deposition method can deposit a thin film having a flat surface, but it is difficult to apply to mass production because the deposition rate is slow and the large area is difficult, and the method of fine-polishing the surface of the manufactured thin film, Flattening method by rod member having surface having polishing ability, application of liquid leveling agent using surface modifier deposition, flattening etching, pressurization-flattening and ablation, etc. The planarization process has a problem of causing unwanted scratch defects, surface contamination, etc. on the surface of the ITO film after the planarization process.

The present invention relates to a polishing slurry composition comprising colloidal silica abrasive grains, which can improve the surface planarization process of a thin film applied to a semiconductor device and a display device.

According to one embodiment of the invention, colloidal silica abrasive particles; pH regulators; It relates to a polishing slurry composition comprising; and a chelating agent.

According to one embodiment of the invention, the colloidal silica abrasive particles, may be included in 0.0001 parts by weight to 20 parts by weight based on the slurry composition.

According to one embodiment of the present invention, the colloidal silica abrasive particles, may be included in more than 0.5 parts by weight and 5 parts by weight or less based on the slurry composition.

According to one embodiment of the invention, the size of the colloidal silica abrasive particles, may be from 10 nm to 300 nm.

According to one embodiment of the invention, the colloidal silica abrasive particles, pH 1 to 12, may be to have a-1 mV to-100 mV zeta potential.

According to one embodiment of the present invention, the colloidal silica abrasive particles may be a single size particle of 10 nm to 300 nm or may include mixed particles having two or more different sizes of 10 nm to 300 nm.

According to one embodiment of the invention, the colloidal silica abrasive particles, may comprise particles of the first size of 10 nm to 150 nm and the second size of 150 nm to 300 nm size.

According to one embodiment of the invention, the chelating agent comprises an organic acid, the organic acid is citric acid, malic acid, maleic acid, malonic acid, oxalic acid, succinic acid, lactic acid, tartaric acid, adipic acid, pimelic acid, water Veronic acid, azelaic acid, sebacic acid, maleic acid, fumaric acid, acetic acid, adipic acid, butyric acid, capric acid, caproic acid, caprylic acid, glutaric acid, glycolic acid, formic acid, lauric acid, myristic acid It may be one or more selected from the group consisting of palmitic acid, phthalic acid, propionic acid, pyruvic acid, stearic acid and valeric acid.

According to one embodiment of the invention, the chelating agent, may be included in 0.00001 parts by weight to 10 parts by weight with respect to the slurry composition.

According to an embodiment of the present invention, the pH adjusting agent comprises an acidic substance or a basic substance, the acidic substance is nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, bromic acid, iodic acid, formic acid, malonic acid, maleic acid , Oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, salicylic acid, pimeline acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid, lactic acid, aspartic acid, Tartaric acid and at least one selected from the group consisting of salts, wherein the basic substance is ammonium methyl propanol (AMP), tetra methyl ammonium hydroxide (TMAH), ammonium hydroxide , Potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, sodium bicarbonate, sodium carbonate, imidazole and salts thereof It may be one containing at least one member selected.

According to an embodiment of the present invention, the polishing slurry composition may be applied to polishing of a thin film including at least one selected from the group consisting of a silicon oxide film, a metal film, a metal oxide film, and an inorganic oxide film.

According to one embodiment of the present invention, the polishing slurry composition may be applied to a semiconductor device, a display device or a polishing process of both.

According to one embodiment of the present invention, the metal film and the metal oxide film, respectively, indium (In), tin (Sn), silicon (Si), titanium (Ti), vanadium (V), gadolium (Ga), Manganese (Mn), Iron (Fe), Cobalt (Co), Copper (Cu), Zinc (Zn), Zirconium (Zr), Hafnium (Hf), Aluminum (Al), Niobium (Nb), Nickel (Ni), Chromium (Cr), molybdenum (Mo), tantalum (Ta), ruthenium (Ru), tungsten (W), titanium (Ti), nickel (Ni), chromium (Cr), neodynium (Nd), rubidium ( Rb), gold (Au) and platinum (Pt) may be one containing one or more selected from the group consisting of.

According to one embodiment of the invention, the inorganic oxide film, FTO (fluorine doped tin oxide, SnO ₂ F), ITO (indium tin oxide), IZO (indium zinc oxide), IGZO (indium gallium zinc oxide), AZO (Al-doped ZnO), AGZO (Aluminum Gallium Zinc Oxide), GZO (Ga-doped ZnO), Indium Zinc Tin Oxide (IZTO), Indium Aluminum Zinc Oxide (IAZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZO Nitride ), SnO ₂ , ZnO, IrOx, RuOx and NiO may be one containing at least one selected from the group consisting of.

According to an embodiment of the present invention, the polishing rate for the target film during polishing of the target film using the polishing slurry composition may be 100 μs / min or more.

According to one embodiment of the invention, the surface flatness after polishing of the target film using the slurry composition may be 5% or less.

According to one embodiment of the present invention, the transparency of the device after polishing the target film using the slurry composition may be increased by at least 5% compared to before polishing.

The present invention, by applying a colloidal silica abrasive particles to ensure a sufficient amount of polishing for each polishing target film, it is possible to provide a polishing slurry composition that can be free or minimize the scratch defects during the polishing process.

The polishing slurry composition of the present invention is applied to the planarization process of semiconductor devices and display devices by a chemical mechanical polishing process (CMP), and specifically, may be applied to the planarization process of inorganic oxide films used for inorganic oxide films and display devices. .

In the polishing slurry composition of the present invention, the flatness and / or transmittance of a semiconductor wiring element, a display substrate, a panel, and the like, which require a planarization process of an oxide film, a metal film, and an inorganic oxide film, can be secured, thereby increasing efficiency in a post process.

Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings. However, various changes may be made to the embodiments so that the scope of the patent application is not limited or limited by these embodiments. It is to be understood that all changes, equivalents, and substitutes for the embodiments are included in the scope of rights.

The terminology used herein is for the purpose of description and should not be construed as limiting. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "comprise" or "have" are intended to indicate that there is a feature, number, step, action, component, part, or combination thereof described on the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

In addition, in the description with reference to the accompanying drawings, the same components regardless of reference numerals will be given the same reference numerals and duplicate description thereof will be omitted. In the following description of the embodiment, when it is determined that the detailed description of the related known technology may unnecessarily obscure the gist of the embodiment, the detailed description thereof will be omitted.

The present invention relates to a slurry composition for polishing, in accordance with an embodiment of the present invention, the slurry composition comprises colloidal silica abrasive particles; pH regulators; And a chelating agent.

According to one embodiment of the invention, the colloidal silica abrasive particles, may comprise 0.0001 parts by weight to 20 parts by weight with respect to the slurry composition, to improve the transparency and / or planarization after polishing, defects and stretch Defects can be minimized. Preferably from 0.0001 parts by weight to 10 parts by weight, more preferably greater than 0.5 to 5 parts by weight or less.

The colloidal silica abrasive particles may have a size of 10 nm to 300 nm. When the size of the particles is less than 10 nm, excessively small particles are generated, the flatness of the polishing target film is lowered, excessive defects are generated on the surface of the polishing target film, and the polishing rate is lowered. There may be difficulty in controlling flatness, transparency and defects after mechanical polishing due to failure to achieve. The size may mean a diameter, a length, a thickness, etc. according to the shape of the particles.

The colloidal silica abrasive particles are single-size particles of 10 nm to 300 nm or two or more different sizes of 10 nm to 300 nm in order to improve dispersibility in the slurry, polishing performance of the film to be polished, planarization and transparency. It may be to include mixed particles. For example, the colloidal silica abrasive particles may include particles of a first size of 10 nm to 150 nm and a second size of 150 nm to 300 nm.

The shape of the colloidal silica abrasive grains may include one or more selected from the group consisting of spherical, rectangular, acicular, and plate-like shapes.

The colloidal silica abrasive particles, pH 1 to 12,-1 mV to-100 mV zeta potential, pH 1 to 6,-10 mV to-70 mV zeta potential; Or -10 mV to -70 mV at pH 2.5 to 6. This shows a high absolute value of zeta potential even in the acidic region, and thus high dispersion stability and excellent polishing force for the film to be polished can be realized.

The colloidal silica abrasive particles may not only perform the function of the abrasive particles in the polishing slurry composition, but may also simultaneously perform the function of the oxidant for oxidizing the metal film.

The colloidal silica abrasive particles, it is possible to produce a polishing slurry composition having a high dispersion stability. In addition, the polishing target film, for example, to promote the oxidation of the inorganic oxide film to implement a high polishing characteristics that can easily polish the inorganic oxide film, and to minimize the scratch defects to improve the flatness and transparency of inorganic oxide films such as ITO You can.

According to one embodiment of the invention, the chelating agent comprises an organic acid, the organic acid is citric acid, malic acid, maleic acid, malonic acid, oxalic acid, succinic acid, lactic acid, tartaric acid, adipic acid, pimelic acid, water Veronic acid, azelaic acid, sebacic acid, maleic acid, fumaric acid, acetic acid, adipic acid, butyric acid, capric acid, caproic acid, caprylic acid, glutaric acid, glycolic acid, formic acid, lauric acid, myristic acid It may be one or more selected from the group consisting of palmitic acid, phthalic acid, propionic acid, pyruvic acid, stearic acid and valeric acid.

The chelating agent is included in an amount of 0.00001 parts by weight to 10 parts by weight with respect to the slurry composition, if included in the range can ensure the particle dispersibility and stability of the slurry composition.

According to one embodiment of the present invention, the pH adjusting agent, to prevent corrosion of the film to be polished or corrosion of the polishing machine and to implement a pH range suitable for polishing performance, and includes an acidic material or a basic material, the acidic material is , Nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, bromic acid, iodic acid, formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, salicylic acid, pimeline Acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid, lactic acid, aspartic acid, tartaric acid and at least one selected from the group consisting of each salt, the basic substance is ammonium methyl propanol (ammonium methyl propanol (AMP), tetra methyl ammonium hydroxide (TMAH), ammonium hydroxide, potassium hydroxide, sodium hydroxide, mag hydroxide Syum, may be one containing a hydroxide, rubidium hydroxide, cesium hydroxide, sodium hydrogen carbonate, sodium carbonate, imidazole and at least one member selected from the group consisting of each salt.

According to one embodiment of the invention, the slurry composition further comprises an oxidizing agent, the oxidizing agent, hydrogen peroxide, hydrogen peroxide, urea hydrogen peroxide, urea, percarbonate, periodate, periodate, perchloric acid, perchlorate, peroxide Bromic acid, perbromate, perboric acid, perborate, permanganic acid, permanganate, persulfate, bromate, chlorate, chlorite, chromate, iodide, iodide, ammonium persulfate, benzoyl peroxide, calcium peroxide, barium peroxide It may be one containing one or more selected from the group consisting of oxides, sodium peroxide and urea peroxide.

The oxidant may be included in an amount of 0.005 parts by weight to 10 parts by weight based on the slurry composition. When included within the above range, it is possible to provide an appropriate polishing rate for the polishing target film, and to prevent corrosion, erosion, and hardening of the polishing target film due to an increase in the content of the oxidizing agent.

The pH of the polishing slurry composition according to the present invention is preferably adjusted to give dispersion stability and an appropriate polishing rate according to the abrasive particles, the pH of the polishing slurry composition is 1 to 12, preferably 1 to 6 It may have an acidic pH range.

The polishing slurry composition may have a −1 mV to −100 mV zeta potential, preferably −10 mV to −70 mV zeta potential. If the absolute value of the zeta potential is high, the force for pushing the particles together becomes strong, so that aggregation does not occur easily. Therefore, in the polishing slurry composition of the present invention, the absolute value of zeta potential is high even in an acidic region, and thus, high dispersion stability and excellent polishing force can be realized.

According to an embodiment of the present invention, the polishing slurry composition may be applied to a polishing process of a semiconductor device and a display device.

The polishing slurry composition may be applied to a planarization process of a semiconductor device and a display device using a thin film including at least one selected from the group consisting of an insulating film, a metal film, a metal oxide film, and an inorganic oxide film as a polishing target film. For example, the semiconductor device may be applied to the planarization process of the semiconductor device to which the insulating film, the metal film, the metal oxide film, and / or the inorganic oxide film is applied, and the display device to which the inorganic oxide film is applied.

The insulating film may be a silicon or silicon oxide film, and the metal film and the metal oxide film may include indium (In), tin (Sn), silicon (Si), titanium (Ti), vanadium (V), and gadolium ( Ga), manganese (Mn), iron (Fe), cobalt (Co), copper (Cu), zinc (Zn), zirconium (Zr), hafnium (Hf), aluminum (Al), niobium (Nb), nickel ( Ni), chromium (Cr), molybdenum (Mo), tantalum (Ta), ruthenium (Ru), tungsten (W), titanium (Ti), nickel (Ni), chrome (Cr), neodynium (Nd) , Rubidium (Rb), gold (Au) and platinum (Pt) may include one or more selected from the group consisting of.

The inorganic oxide film may be formed of indium (In), tin (Sn), silicon (Si), titanium (Ti), vanadium (V), gadolium (Ga), manganese (Mn), iron (Fe), and cobalt (Co). , Copper (Cu), zinc (Zn), zirconium (Zr), hafnium (Hf), aluminum (Al), niobium (Nb), nickel (Ni), chromium (Cr), molybdenum (Mo), tantalum ( Oxide containing one or more selected from the group consisting of Ta), ruthenium (Ru), tungsten (W), tin (Sn), aluminum (Al), antimony (Sb), Ir (iridium) and Ni (nickel) , Nitride or both, and halogen or the like can be doped. For example, fluorine doped tin oxide, SnO ₂ F), ITO (indium tin oxide), IZO (indium zinc oxide), IGZO (indium gallium zinc oxide), AZO (Al-doped ZnO), AGZO (Aluminum Gallium Zinc Oxide), GZO (Ga-doped ZnO), Indium Zinc Tin Oxide (IZTO), Indium Aluminum Zinc Oxide (IAZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZO Nitride ), SnO ₂ , ZnO, IrOx, RuOx, and NiO.

The planarization process of the semiconductor element and the display element includes a nitride film of the above-mentioned elements, for example, a nitride film such as SiN, a high dielectric constant film such as Hf-based, Ti-based, Ta-based oxide, etc .; Semiconductor films such as silicon, amorphous silicon, SiC, SiGe, Ge, GaN, GaP, GaAs, organic semiconductors; Phase change films such as GeSbTe; It may be further applied to polymer resin films such as polyimide, polybenzoxazole, acrylic, epoxy, phenol and the like.

The display element may be a substrate or a panel, and may be a TFT or an organic light emitting display element.

According to one embodiment of the present invention, the polishing slurry composition is a polishing of a substrate including at least one selected from the group consisting of glass, silicon, SiC, SiGe, Ge, GaN, GaP, GaAs, sapphire, plastics, and the like. It can be further applied to the process.

According to one embodiment of the invention, the polishing rate for the polishing target film of the polishing slurry composition is 100 Å / min or more; 500 dl / min or more; Or 1000 mW / min or more.

According to an embodiment of the present invention, the surface flatness of the polishing target layer using the polishing slurry composition may be 5% or less.

According to an embodiment of the present invention, after polishing the polishing target layer using the polishing slurry composition, a peak to valley (PV) value of the surface is 100 nm or less, or the surface roughness is 10 nm. It may be the following. The peak to valley value and the degree of surface roughness can be measured by atomic force microscopy.

According to an embodiment of the present invention, after polishing the polishing target layer using the polishing slurry composition, the transparency of the device may be increased by 5% or more.

Hereinafter, the present invention will be described in detail with reference to the following Examples and Comparative Examples. However, the technical spirit of the present invention is not limited or limited thereto.

Example 1 Polishing Slurry Composition Comprising Colloidal Silica Abrasive Particles

A polishing slurry composition of pH 2.5 was prepared by adding 4% by weight of colloidal silica abrasive particles, 0.5% by weight of hydrogen peroxide as an oxidant, 0.1% by weight of malonic acid as a chelating agent and nitric acid as a pH adjusting agent.

Example 2 Polishing Slurry Composition Comprising Colloidal Silica Abrasive Particles

A polishing slurry composition was prepared in the same manner as in Example 1 except that the chelating agent was contained in an amount of 1.00 wt%.

Example 3: Polishing Slurry Composition Comprising Colloidal Silica Abrasive Particles

A polishing slurry composition was prepared in the same manner as in Example 1, except that 6 wt% of colloidal silica abrasive grains and 0.07 wt% of a chelating agent were included.

Example 4: Polishing Slurry Composition Comprising Colloidal Silica Abrasive Particles

A polishing slurry composition was prepared in the same manner as in Example 1, except that 0.5 wt% of colloidal silica abrasive grains and 0.5 wt% of a chelating agent were contained.

Comparative Example 1: Polishing Slurry Composition Comprising Silica Abrasive Particles

A polishing slurry composition was prepared in the same manner as in Example 1 except for using commercially available silica abrasive particles and applying 2% by weight of abrasive particles without applying a chelating agent.

(1) dispersion stability evaluation (zeta potential change)

In order to evaluate the dispersion stability of the abrasive particles of Example 1 and Comparative Example 1, the initial zeta potential of the abrasive particles according to Example 1 and Comparative Example 1 was compared with the zeta potential after 10 days. Table 1 below compares the initial zeta potential of the abrasive grains according to Example 1 and Comparative Example 1 of the present invention with the zeta potential after 10 days.

Initial Zeta Potential
(mV) Zeta potential after 10 days
(mV) Remarks Example 1 -21.5 -18.2 stability Comparative Example 1 +1.5 +0.2 Cohesion

Referring to Table 1, the colloidal silica abrasive particles of the present invention can be confirmed that the dispersion stability is higher than the abrasive particles of Comparative Example 1 due to the high zeta potential absolute value even after 10 days.

(2) evaluation of polishing properties

Using the polishing slurry compositions of Examples and Comparative Examples, the ITO film-containing substrate was polished under the following polishing conditions.

[Polishing condition]

1. Grinding equipment: CETR CP-4 by Bruker

2. Wafer: 6 cm x 6 cm ITO membrane transparent substrate

3. Platen pressure: 3 psi

4. Spindle speed: 69 rpm

5. platen speed: 70 rpm

6. Flow rate: 100 ml / min

In order to evaluate the polishing properties, the polishing rate and flatness of the ITO film substrates were compared using the polishing slurry compositions according to the Examples and Comparative Examples. Table 2 below shows the polishing rate and flatness after polishing the ITO film substrate using the polishing slurry composition according to the Examples and Comparative Examples of the present invention.

Abrasive Particle Type Abrasive Particle Content
(wt%) Chelating agent content
(wt%) Polishing speed
(Å / min) flatness
(%) transparency
Change (after polishing / before polishing) Example 1 Colloidal silica 4.0 0.10 521 4 +13 Example 2 Colloidal silica 4.0 1.00 601 2 +16 Example 3 Colloidal silica 6.0 0.07 659 3 +18 Example 4 Colloidal silica 0.5 0.50 493 4 +14 Comparative Example 1 Silica 2.0 0.00 52 17 +2

Referring to Table 2, in the case of using the polishing slurry composition to which colloidal silica according to Examples 1 to 4 of the present invention is used, both the polishing rate and the flatness of the ITO film are excellent, and the scratchability is minimized. It can be seen that the transparency of the substrate is improved.

Although the embodiments have been described with reference to the accompanying drawings, those skilled in the art may apply various technical modifications and variations based on the above. For example, the techniques described may be performed in a different order than the described method, and / or the components described may be combined or combined in a different form than the described method, or replaced or substituted by other components or equivalents. Appropriate results can be achieved.

Therefore, other implementations, other embodiments, and equivalents to the claims are within the scope of the following claims.

Claims (17)

Colloidal silica abrasive particles;
pH regulators; And
Chelating agents;
Including,
Polishing slurry composition.
The method of claim 1,
The colloidal silica abrasive particles, the slurry composition for polishing will be included in 0.0001 parts by weight to 20 parts by weight based on the slurry composition.
The method of claim 1,
The colloidal silica abrasive particles, the slurry composition for polishing will be included in more than 0.5 parts by weight and 5 parts by weight or less based on the slurry composition.
The method of claim 1,
The size of the colloidal silica abrasive particles is, 10 nm to 300 nm, polishing slurry composition.
The method of claim 1,
The colloidal silica abrasive particles, at a pH of 1 to 12, will have a-1 mV to-100 mV zeta potential, polishing slurry composition.
The method of claim 1,
The colloidal silica abrasive particles, a single slurry size of 10 nm to 300 nm, or a polishing slurry composition comprising a mixed particle having two or more different sizes of 10 nm to 300 nm.
The method of claim 1,
The colloidal silica abrasive particles, the inorganic oxide film polishing slurry composition comprising particles of a first size of 10 nm to 150 nm and a second size of 150 nm to 300 nm size.
The method of claim 1,
The chelating agent comprises an organic acid,
The organic acid is citric acid, malic acid, maleic acid, malonic acid, oxalic acid, succinic acid, lactic acid, tartaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, fumaric acid, acetic acid, adipic acid , Butyric acid, capric acid, caproic acid, caprylic acid, glutaric acid, glycolic acid, formic acid, lauric acid, myristic acid, palmitic acid, phthalic acid, propionic acid, pyruvic acid, stearic acid and valeric acid It comprises at least one selected, polishing slurry composition.
The method of claim 1,
The chelating agent, it is included in the slurry composition 0.00001 parts by weight to 10 parts by weight, polishing slurry composition.
The method of claim 1,
The pH adjusting agent includes an acidic substance or a basic substance,
The acidic substance is nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, bromic acid, iodic acid, formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, At least one selected from the group consisting of salicylic acid, pimeline acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid, lactic acid, aspartic acid, tartaric acid and salts thereof,
The basic substance is ammonium methyl propanol (AMP), tetra methyl ammonium hydroxide (TMAH), ammonium hydroxide, potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, carbonate A polishing slurry composition comprising at least one selected from the group consisting of sodium hydrogen, sodium carbonate, imidazole and each salt.
The method of claim 1,
The polishing slurry composition is applied to polishing of a thin film comprising at least one selected from the group consisting of a silicon oxide film, a metal film, a metal oxide film and an inorganic oxide film, polishing slurry composition.
The method of claim 1,
The polishing slurry composition is a polishing slurry composition, which is applied to a semiconductor device, a display device or a polishing process of the two.
The method of claim 1,
The metal film and the metal oxide film are indium (In), tin (Sn), silicon (Si), titanium (Ti), vanadium (V), gadolium (Ga), manganese (Mn), iron (Fe), respectively. , Cobalt (Co), copper (Cu), zinc (Zn), zirconium (Zr), hafnium (Hf), aluminum (Al), niobium (Nb), nickel (Ni), chromium (Cr), molybdenum ( Mo), tantalum (Ta), ruthenium (Ru), tungsten (W), titanium (Ti), nickel (Ni), chromium (Cr), neodymium (Nd), rubidium (Rb), gold (Au) and platinum It comprises one or more selected from the group consisting of (Pt), polishing slurry composition.
The method of claim 1,
The inorganic oxide film, FTO (fluorine doped tin oxide, SnO ₂ F), ITO (indium tin oxide), IZO (indium zinc oxide), IGZO (indium gallium zinc oxide), AZO (Al-doped ZnO), AGZO (Aluminum Gallium Zinc Oxide), GZO (Ga-doped ZnO), Indium Zinc Tin Oxide (IZTO), Indium Aluminum Zinc Oxide (IAZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZO Nitride ), SnO ₂ , ZnO, IrOx, RuOx and NiO which comprises at least one selected from the group consisting of, slurry composition for polishing.
The method of claim 1,
Polishing rate with respect to the target film at the time of the polishing of the target film using the polishing slurry composition is 100 Å / min or more, polishing slurry composition.
The method of claim 1,
Surface polishing after polishing the target film using the slurry composition is 5% or less, polishing slurry composition.
The method of claim 1,
After polishing the target film using the slurry composition, the transparency of the device is increased by at least 5% compared to before polishing, polishing slurry composition.