KR101110723B1 - 연마용 조성물 및 연마 방법 - Google Patents
연마용 조성물 및 연마 방법 Download PDFInfo
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- KR101110723B1 KR101110723B1 KR1020067006163A KR20067006163A KR101110723B1 KR 101110723 B1 KR101110723 B1 KR 101110723B1 KR 1020067006163 A KR1020067006163 A KR 1020067006163A KR 20067006163 A KR20067006163 A KR 20067006163A KR 101110723 B1 KR101110723 B1 KR 101110723B1
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- polishing
- polishing composition
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- acid
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- 238000005498 polishing Methods 0.000 title claims abstract description 559
- 239000000203 mixture Substances 0.000 title claims abstract description 262
- 238000000034 method Methods 0.000 title claims description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 141
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 88
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 88
- 239000000126 substance Substances 0.000 claims abstract description 75
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- 230000004888 barrier function Effects 0.000 claims abstract description 56
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 33
- 239000004094 surface-active agent Substances 0.000 claims abstract description 30
- 239000002253 acid Substances 0.000 claims abstract description 22
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- 239000002245 particle Substances 0.000 claims description 61
- 150000001875 compounds Chemical class 0.000 claims description 50
- 125000000217 alkyl group Chemical group 0.000 claims description 47
- 238000007517 polishing process Methods 0.000 claims description 45
- 239000003795 chemical substances by application Substances 0.000 claims description 26
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 21
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 20
- 125000004432 carbon atom Chemical group C* 0.000 claims description 19
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- 239000004065 semiconductor Substances 0.000 claims description 15
- 235000008206 alpha-amino acids Nutrition 0.000 claims description 14
- 150000003839 salts Chemical class 0.000 claims description 14
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 12
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 10
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- 125000001302 tertiary amino group Chemical group 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 claims description 8
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- 125000001174 sulfone group Chemical group 0.000 claims description 6
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 125000000524 functional group Chemical group 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
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- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
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- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 9
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- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
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- 229910052710 silicon Inorganic materials 0.000 description 7
- 229910052708 sodium Inorganic materials 0.000 description 7
- 239000011734 sodium Substances 0.000 description 7
- JNXJYDMXAJDPRV-UHFFFAOYSA-N 2-(benzotriazol-1-yl)butanedioic acid Chemical compound C1=CC=C2N(C(C(O)=O)CC(=O)O)N=NC2=C1 JNXJYDMXAJDPRV-UHFFFAOYSA-N 0.000 description 6
- WVIXTJQLKOLKTQ-UHFFFAOYSA-N 3-(benzotriazol-1-yl)propane-1,2-diol Chemical compound C1=CC=C2N(CC(O)CO)N=NC2=C1 WVIXTJQLKOLKTQ-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 6
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- 125000005037 alkyl phenyl group Chemical group 0.000 description 4
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- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 4
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- ZDSCFBCGDDCJFZ-UHFFFAOYSA-N 2-(methylamino)ethanesulfonic acid;sodium Chemical compound [Na].CNCCS(O)(=O)=O ZDSCFBCGDDCJFZ-UHFFFAOYSA-N 0.000 description 3
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- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
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- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 3
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- MXJIHEXYGRXHGP-UHFFFAOYSA-N benzotriazol-1-ylmethanol Chemical compound C1=CC=C2N(CO)N=NC2=C1 MXJIHEXYGRXHGP-UHFFFAOYSA-N 0.000 description 2
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- 239000003599 detergent Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 229960000878 docusate sodium Drugs 0.000 description 1
- KWKXNDCHNDYVRT-UHFFFAOYSA-N dodecylbenzene Chemical compound CCCCCCCCCCCCC1=CC=CC=C1 KWKXNDCHNDYVRT-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 229940043230 sarcosine Drugs 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 235000014393 valine Nutrition 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Disintegrating Or Milling (AREA)
Abstract
Description
계면활성제 (질량%) |
규소산화물 (질량%) |
카복실산 (질량%) |
방식제 (질량%) |
산화제(질량%) |
pH |
연마 속도(㎚/분 ) |
디싱 깊이(㎚) |
구리함유 금속의 잔류량 | 포트 라이프 | ||
Ex. 28 | A1 0.02% |
D 0.015% |
CS2 0.5% |
Oxa 1% |
G 0.01% |
APS 1% |
9.5 | 400 | 120 | ○ | △ |
Ex. 29 | A1 0.02% |
D 0.015% |
CS2 0.5% |
Ala 1% |
"g 0.0005% |
APS 1% |
9.5 | 600 | 20 | ○ | △ |
Ex. 30 | A1 0.02% |
D 0.015% |
CS2 0.5% |
Ala 1% |
"h 0.005% |
APS 1% |
9.5 | 600 | 20 | ○ | △ |
Ex. 31 | A1 0.02% |
D 0.015% |
CS2 0.5% |
Ala 1% |
G 0.01% |
HPO 1% |
9.5 | 300 | 100 | ○ | ○ |
C.Ex. 1 | - | - | CS2 0.5% |
Ala 1% |
G 0.01% |
APS 1% |
9.5 | 1000 | 250 | ○ | △ |
C.Ex. 2 | - | D 0.015% |
CS2 0.5% |
Ala 1% |
G 0.01% |
APS 1% |
9.5 | 800 | 150 | ○ | △ |
C.Ex. 3 | - | E 0.015% |
CS2 0.5% |
Ala 1% |
G 0.01% |
APS 1% |
9.5 | 800 | 150 | ○ | △ |
C.Ex. 4 | - | F 0.015% |
CS2 0.5% |
Ala 1% |
G 0.01% |
APS 1% |
9.5 | 800 | 150 | ○ | △ |
C.Ex. 5 | A1 0.02% |
D 0.015% |
- | Ala 1% |
G 0.01% |
APS 1% |
9.5 | 40 | - | X | △ |
C.Ex. 6 | A1 0.02% |
D 0.015% |
CS2 0.5% |
- | G 0.01% |
APS 1% |
9.5 | 300 | 200 | ○ | △ |
C.Ex. 7 | A1 0.02% |
D 0.015% |
CS2 0.5% |
Ala 1% |
- | APS 1% |
9.5 | 900 | 450 | ◎ | △ |
C.Ex. 8 | A1 0.02% |
D 0.015% |
CS2 0.5% |
Ala 1% |
G 0.01% |
- | 9.5 | 20 | - | X | ◎ |
C.Ex. 9 | E 0.02% |
F 0.015% |
CS2 0.5% |
Ala 1% |
G 0.01% |
APS 1% |
9.5 | 800 | 450 | ◎ | △ |
C.Ex. 10 | E 0.02% |
D 0.015% |
CS2 0.5% |
Ala 1% |
G 0.01% |
APS 1% |
9.5 | 900 | 150 | ◎ | △ |
C.Ex. 11 | F 0.02% |
D 0.015% |
CS2 0.5% |
Ala 1% |
G 0.01% |
APS 1% |
9.5 | 1000 | 150 | ◎ | △ |
|
콜로이달 실리카 또는 그것을 대신하는 규소산화물(질량%) |
산(질량%) |
방식제(질량%) |
PVA 또는 그것을 대신하는 화합물(질량%) |
산화제(질량%) |
pH |
표면단차 |
세정성 |
표면결함 |
안정성 |
연마속도(㎚/분) |
|||||
구리 블랭킷 웨이퍼 |
탄탈 블랭킷 웨이퍼 |
질화 탄탈 블랭킷 웨이퍼 |
이산화규소 블랭킷 웨이퍼 |
블랙다이아몬드(제품명) 블랭킷 웨이퍼 |
||||||||||||
Ex. 32 | - | CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 80 | 45 | 06 | 6 | 10 |
Ex. 33 | CS1 2% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 90 | 50 | 70 | 40 | 25 |
Ex. 34 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 100 | 60 | 100 | 60 | 35 |
Ex. 35 | CS1 7% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ○ | 100 | 60 | 100 | 70 | 50 |
Ex. 36 | CS1 10% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ○ | 120 | 80 | 130 | 90 | 70 |
Ex. 37 | CS1 5% |
- | NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ○ | ◎ | ◎ | ◎ | 80 | 30 | 50 | 60 | 35 |
Ex. 38 | CS1 5% |
CS3 1% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 90 | 50 | 70 | 60 | 35 |
Ex. 39 | CS1 5% |
CS3 4% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ○ | 100 | 80 | 120 | 70 | 45 |
Ex. 40 | CS1 5% |
CS3 7% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | △ | 100 | 80 | 120 | 70 | 45 |
Ex. 41 | CS1 7% |
- | NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ○ | ◎ | ◎ | ◎ | 100 | 35 | 55 | 70 | 50 |
Ex. 42 | CS1 6% |
CS3 1% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 100 | 50 | 70 | 65 | 40 |
Ex. 43 | CS1 4% |
CS3 3% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 100 | 60 | 100 | 55 | 35 |
Ex. 44 | CS1 3% |
CS3 4% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ○ | 90 | 70 | 110 | 50 | 35 |
Ex. 45 | CS1 2% |
CS3 5% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ○ | 90 | 70 | 110 | 40 | 30 |
Ex. 46 | - | CS3 7% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ○ | 90 | 70 | 110 | 20 | 20 |
Ex. 47 | CS1 5% |
CS3 2% |
NA 0.005% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
5.5 | ○ | ○ | ○ | ◎ | 100 | 10 | 15 | 60 | 35 |
Ex. 48 | CS1 5% |
CS3 2% |
NA 0.03% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
3.5 | ○ | ○ | ◎ | ◎ | 100 | 30 | 45 | 60 | 35 |
Ex. 49 | CS1 5% |
CS3 2% |
NA 0.1% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
1.8 | ◎ | ◎ | ○ | ◎ | 100 | 55 | 90 | 60 | 35 |
Ex. 50 | CS1 5% |
CS3 2% |
NA 1.0% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
1.2 | ○ | ◎ | △ | ◎ | 100 | 45 | 70 | 60 | 35 |
Ex. 51 | CS1 5% |
CS3 2% |
LA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
4 | ○ | ◎ | ◎ | △ | 100 | 40 | 70 | 60 | 35 |
Ex. 52 | CS1 5% |
CS3 2% |
Cit 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.6 | ○ | ◎ | ◎ | △ | 100 | 40 | 70 | 60 | 35 |
|
콜로이달 실리카 또는 그것을 대신하는 규소 산화물(질량%) |
산(질량%) |
방식제 (질량%) |
PVA 또는 그것을 대신하는 화합물(질량%) |
산화제(질량%) |
pH |
표면단차 |
세정성 |
표면결함 |
안정성 |
연마속도(㎚/분) |
|||||
구리 블랭킷 웨이퍼 |
탄탈 블랭킷 웨이퍼 |
질화 탄탈 블랭킷 웨이퍼 |
이산화규소 블랭킷 웨이퍼 |
블랙 다이아몬드(제품명) 블랭킷 웨이퍼 |
||||||||||||
Ex. 53 | CS1 5% |
CS3 2% |
Oxa 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.6 | ○ | ◎ | ◎ | △ | 50 | 50 | 70 | 60 | 10 |
Ex. 54 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.001% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ○ | ◎ | ◎ | ◎ | 130 | 65 | 110 | 60 | 35 |
Ex. 55 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.01% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ○ | ◎ | ◎ | ◎ | 120 | 65 | 110 | 60 | 35 |
Ex. 56 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.1% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 100 | 60 | 100 | 60 | 35 |
Ex. 57 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.5% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 90 | 55 | 90 | 60 | 35 |
Ex. 58 | CS1 5% |
CS3 2% |
NA 0.06% |
G 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ○ | ◎ | ◎ | ◎ | 130 | 65 | 110 | 60 | 35 |
Ex. 59 | CS1 5% |
CS3 2% |
NA 0.06% |
J 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 100 | 60 | 100 | 60 | 35 |
Ex. 60 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.005% |
H2O2 1% |
2.3 | ○ | ◎ | ◎ | ◎ | 30 | 80 | 120 | 60 | 35 |
Ex. 61 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.01% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 65 | 80 | 120 | 60 | 35 |
Ex. 62 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.05% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 100 | 60 | 100 | 60 | 35 |
Ex. 63 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.5% |
H2O2 1% |
2.3 | ○ | ◎ | ◎ | ◎ | 150 | 50 | 80 | 40 | 50 |
Ex. 64 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*2 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 100 | 75 | 95 | 55 | 20 |
Ex. 65 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*3 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 100 | 70 | 95 | 55 | 30 |
Ex. 66 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*4 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 100 | 65 | 100 | 55 | 30 |
Ex. 67 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | ◎ | ◎ | ◎ | ◎ | 90 | 60 | 100 | 60 | 30 |
Ex. 68 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
- | 2.3 | ○ | ◎ | ◎ | ◎ | 25 | 40 | 20 | 50 | 35 |
Ex. 69 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 0.1% |
2.3 | ○ | ◎ | ◎ | ◎ | 30 | 40 | 30 | 60 | 35 |
Ex. 70 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 0.5% |
2.3 | ◎ | ◎ | ◎ | ◎ | 60 | 60 | 80 | 60 | 35 |
Ex. 71 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 2% |
2.3 | ○ | ◎ | ◎ | ◎ | 120 | 55 | 80 | 50 | 30 |
Ex. 72 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 5% |
2.3 | ○ | ◎ | ◎ | ◎ | 100 | 50 | 70 | 40 | 20 |
|
콜로이달 실리카 또는 그것을 대신하는 규소 산화물(질량%) |
산(질량%) |
방식제(질량%) |
PVA 또는 그것을 대신하는 화합물(질량%) |
산화제(질량%) |
pH |
표면단차 |
세정성 |
표면결함 |
안정성 |
연마속도(㎚/분) |
|||||
구리 블랭킷 웨이퍼 |
탄탈 블랭킷 웨이퍼 |
질환탄탈 블랭킷 웨이퍼 |
이산화규소 블랭킷 웨이퍼 |
블랙 다이아몬드(제품명) 블랭킷 웨이퍼 |
||||||||||||
C.Ex. 12 | - | - | NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | × | ○ | △ | ◎ | 10 | 5 | 5 | 0 | 0 |
C.Ex. 13 | FS1 5% |
FS3 2% |
NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | × | ○ | △ | △ | 100 | 60 | 100 | 120 | 50 |
C.Ex. 14 | FS4 7% |
- | NA 0.06% |
H 0.05% |
PVA*1 0.1% |
H2O2 1% |
2.3 | × | ○ | △ | △ | 100 | 60 | 100 | 120 | 50 |
C.Ex. 15 | CS1 5% |
CS3 2% |
- | H 0.05% |
PVA*1 0.1% |
H2O2 1% |
6.7 | × | ◎ | ◎ | ○ | 10 | 20 | 30 | 30 | 15 |
C.Ex. 16 | CS1 5% |
CS3 2% |
NA 0.06% |
- | PVA*1 0.1% |
H2O2 1% |
2.3 | × | ◎ | ◎ | ◎ | 110 | 70 | 110 | 60 | 35 |
C.Ex. 17 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
- | H2O2 1% |
2.3 | × | ◎ | ◎ | ◎ | 30 | 70 | 110 | 60 | 10 |
C.Ex. 18 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*5 0.1% |
H2O2 1% |
2.3 | × | ○ | △ | × | 85 | 25 | 45 | 10 | 45 |
C.Ex. 19 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*5 0.1% |
H2O2 1% |
2.3 | × | ○ | △ | × | 90 | 25 | 45 | 10 | 45 |
C.Ex. 20 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*6 0.1% |
H2O2 1% |
2.3 | × | ○ | △ | × | 90 | 20 | 40 | 7 | 45 |
C.Ex. 21 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
PVA*7 0.1% |
H2O2 1% |
2.3 | × | ○ | △ | × | 90 | 20 | 40 | 5 | 40 |
C.Ex. 22 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
A 0.1% |
H2O2 1% |
2.3 | × | × | × | × | 5 | 5 | 5 | 5 | 5 |
C.Ex. 23 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
B 0.1% |
H2O2 1% |
2.3 | △ | ◎ | ○ | ◎ | 50 | 60 | 100 | 50 | 10 |
C.Ex. 24 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
C 0.1% |
H2O2 1% |
2.3 | △ | ◎ | ○ | ◎ | 50 | 40 | 80 | 40 | 10 |
C.Ex. 25 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
D 0.1% |
H2O2 1% |
2.3 | △ | ◎ | ○ | ◎ | 50 | 50 | 70 | 60 | 10 |
C.Ex. 26 | CS1 5% |
CS3 2% |
NA 0.06% |
H 0.05% |
E 0.1% |
H2O2 1% |
2.3 | △ | ◎ | ○ | ◎ | 60 | 50 | 90 | 50 | 10 |
|
α-아미노산 또는 그것을 대신하는 연마 촉진제(질량%) |
벤조트리아졸 유도체 또는 그것을 대신하는 방식제(질량%) |
규소 산화물(질량%) |
계면활성제(질량%) |
산화제(질량%) |
pH |
연마속도(㎚/분) |
디싱깊이(㎚) |
구리가 함유된 금속의 잔류량 |
포트라이프 |
|
Ex. 73 |
Ala 0.01% |
G 0.01% |
CS2 0.5% |
Al 0.02% |
D 0.015% |
APS 1% |
9.5 | 1000 | 100 | ○ | △ |
Ex. 74 | Ala 0.5% |
G 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 800 | 60 | ○ | △ |
Ex. 75 | Ala 1% |
G 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 600 | 20 | ○ | △ |
Ex. 76 | Ala 1.5% |
G 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 400 | 20 | ○ | △ |
Ex. 77 | Ala 2% |
G 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 200 | 15 | △ | △ |
Ex. 78 | Ala 1% |
G 0.001% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 800 | 100 | ○ | △ |
Ex. 79 | Ala 1% |
G 0.005% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 700 | 70 | ○ | △ |
Ex. 80 | Ala 1% |
G 0.02% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 300 | 15 | △ | △ |
Ex. 81 | Gly 1% |
G 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 800 | 50 | ○ | △ |
Ex. 82 | Val 1% |
G 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 400 | 15 | △ | △ |
Ex. 83 | Ala 1% |
H 0.0001% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 800 | 100 | ○ | △ |
Ex. 84 | Ala 1% |
H 0.0005% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 600 | 20 | ○ | △ |
Ex. 85 | Ala 1% |
H 0.001% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 300 | 15 | △ | △ |
Ex. 86 | Ala 1% |
I 0.001% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 800 | 100 | ○ | △ |
Ex. 87 | Ala 1% |
I 0.005% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 600 | 20 | ○ | △ |
Ex. 88 | Ala 1% |
I 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 300 | 15 | △ | △ |
Ex. 89 | Gly 1% |
H 0.0005% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 800 | 50 | ○ | △ |
Ex. 90 | Val 1% |
H 0.0005% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 400 | 15 | △ | △ |
Ex. 91 | Gly 1% |
I 0.005% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 800 | 50 | ○ | △ |
Ex. 92 | Val 1% |
I 0.005% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 400 | 15 | △ | △ |
Ex. 93 | Ala 1% |
G 0.01% |
CS2 0.5% |
A2 0.02% |
D 0.015% |
APS 1% |
9.5 | 600 | 20 | ○ | △ |
Ex. 94 | Ala 1% |
G 0.01% |
CS2 0.5% |
A3 0.02% |
D 0.015% |
APS 1% |
9.5 | 600 | 20 | ○ | △ |
Ex. 95 | Ala 1% |
G 0.01% |
CS2 0.5% |
B1 0.02% |
D 0.015% |
APS 1% |
9.5 | 400 | 40 | ○ | ○ |
Ex. 96 | Ala 1% |
G 0.01% |
CS2 0.5% |
B2 0.02% |
D 0.015% |
APS 1% |
9.5 | 800 | 100 | ◎ | △ |
Ex. 97 | Ala 1% |
G 0.01% |
CS2 0.5% |
C1 0.02% |
D 0.015% |
APS 1% |
9.5 | 800 | 100 | ○ | △ |
α-아미노산 또는 그것을 대신하는 연마 촉진제(질량%) | 벤조트리아졸유도체 또는 그것을 대신하는 방식제(질량%) |
규소산화물(질량%) |
계면활성제(질량%) |
산화제 (질량%) |
pH |
연마속도(㎚/분) |
디싱 깊이(㎚) |
구리가 함유된 금속의 잔류량 |
포트라이프 |
||
Ex. 98 | Ala 1% |
G 0.01% |
CS2 0.5% |
C2 0.02% |
D 0.015% |
APS 1% |
9.5 | 800 | 100 | ○ | △ |
Ex. 99 | Ala 1% |
G 0.01% |
CS2 0.5% |
A1 0.035% |
- | APS 1% |
9.5 | 450 | 20 | ○ | △ |
Ex. 100 | Ala 1% |
G 0.01% |
CS2 0.5% |
A1 0.02% |
E 0.015% |
APS 1% |
9.5 | 700 | 50 | ○ | △ |
Ex. 101 | Ala 1% |
G 0.01% |
CS2 0.5% |
B2 0.02% |
E 0.015% |
APS 1% |
9.5 | 800 | 100 | ◎ | △ |
Ex. 102 | Ala 1% |
G 0.01% |
CS1 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 550 | 15 | △ | △ |
Ex. 103 | Ala 1% |
G 0.01% |
CS3 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 650 | 50 | △ | △ |
Ex. 104 | Ala 1% |
G 0.01% |
FS3 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 600 | 45 | ○ | △ |
Ex. 105 | Ala 1% |
G 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
HPO 1% |
9.5 | 300 | 100 | ○ | ○ |
C.Ex. 27 | - | - | CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 100 | - | × | △ |
C.Ex. 28 | - | G 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 300 | 200 | ○ | △ |
C.Ex. 29 | - | J 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 10 | - | × | △ |
C.Ex. 30 | Ala 1% |
- | CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 900 | 450 | ◎ | △ |
C.Ex. 31 | Gly 1% |
- | CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 1100 | 450 | ◎ | △ |
C.Ex. 32 | Ala 1% |
J 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 10 | - | × | △ |
C.Ex. 33 | Gly 1% |
J 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 20 | - | × | △ |
C.Ex. 34 | Ala 1% |
G 0.01% |
CS2 0.5% |
- | - | APS 1% |
9.5 | 1000 | 250 | ○ | △ |
C.Ex. 35 | Gly 1% |
J 0.01% |
CS2 0.5% |
- | - | APS 1% |
9.5 | 1200 | 300 | ○ | △ |
C.Ex. 36 | Ala 1% |
G 0.01% |
- | A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 40 | - | × | △ |
C.Ex. 37 | Ala 1% |
G 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
- | 9.5 | 20 | - | × | ◎ |
C.Ex. 38 | Cit 1% |
G 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 900 | 120 | ○ | △ |
C.Ex. 39 | LA 1% |
G 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 90 | 150 | ○ | △ |
C.Ex. 40 | Oxa 1% |
G 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 400 | 120 | ○ | △ |
C.Ex. 41 | NA 1% |
G 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 100 | 150 | ○ | △ |
C.Ex. 42 | SA 1% |
G 0.01% |
CS2 0.5% |
A1 0.02% |
D 0.015% |
APS 1% |
9.5 | 120 | 150 | ○ | △ |
Claims (11)
- 반도체 장치의 배선을 형성하기 위한 연마에 이용되는 연마용 조성물에 있어서, 콜로이달 실리카, 산, 방식제(anticorrosive), 완전히 비누화된 폴리비닐 알코올 및 물을 함유하고, pH가 1.5 ~ 4인 것을 특징으로 하는 연마용 조성물.
- 제 1항에 있어서, 산화제를 더 함유하는 것을 특징으로 하는 연마용 조성물.
- 제 1항에 있어서, 상기 콜로이달 실리카의 평균 입자 지름은 0.01 ~ 0.5 ㎛인 것을 특징으로 하는 연마용 조성물.
- 제 1항에 있어서, 상기 콜로이달 실리카는, 평균 입자 지름이 0.05 ㎛ 이상 0.3 ㎛ 이하인 제1 콜로이달 실리카와 평균 입자 지름이 0.01 ㎛ 이상 0.05 ㎛ 미만인 제2 콜로이달 실리카를 함유하는 것을 특징으로 하는 연마용 조성물.
- 제 1항에 있어서, 상기 산은 질산, 염산, 황산, 젖산, 아세트산, 옥살산, 구연산, 사과산, 석신산(succinic acid), 낙산(butyric acid) 및 말론산으로부터 선택되는 적어도 1종을 포함하는 것을 특징으로 연마용 조성물.
- 반도체 장치의 배선(17)을 형성하기 위하여 연마 대상물을 연마하는 방법에 있어서, 제 1항 내지 제 5항 중 어느 한 항에 기재된 연마용 조성물을 이용해서 연마 대상물을 연마하는 것을 특징으로 하는 연마 방법.
- 반도체 장치의 배선(17)을 형성하기 위하여, 트렌치(trench)(13)를 가지는 절연막(12) 위에 배리어막(14) 및 도체막(15)을 차례로 형성해서 이루어지고, 상기 배리어막 및 도체막은 각각 트렌치의 밖에 위치하는 부분 및 트렌치 안에 위치하는 부분을 가지고 있는 연마 대상물을 연마하는 방법에 있어서,상기 방법은 제 1항 내지 제 5항 중 어느 한 항에 기재된 연마용 조성물을 이용한 화학적ㆍ기계적 연마에 의해, 상기 절연막의 표면을 노출시킬 수 있도록, 트렌치의 밖에 위치하는 도체막의 부분 및 트렌치의 밖에 위치하는 배리어막의 부분을 제거하는 공정을 구비한 것을 특징으로 하는 연마 방법.
- 반도체 장치의 배선(17)을 형성하기 위하여, 트렌치(13)를 가지는 절연막(12) 위에 배리어막(14) 및 도체막(15)을 차례로 형성해서 이루어지고, 상기 배리어막 및 도체막은 각각 트렌치의 밖에 위치하는 부분 및 트렌치 안에 위치하는 부분을 가지고 있는 연마 대상물을 연마하는 방법에 있어서,상기 방법은상기 배리어막의 상부면을 노출시킬 수 있도록 트렌치의 밖에 위치하는 도체막의 부분의 일부를 화학적ㆍ기계적 연마에 의해 제거하는 공정; 및상기 절연막의 상부면을 노출시킬 수 있도록 트렌치의 밖에 위치하는 도체막의 부분의 잔여부 및 트렌치의 밖에 위치하는 배리어막의 부분을 화학적ㆍ기계적 연마에 의해 제거하는 공정을 구비하고;상기 트렌치의 밖에 위치하는 도체막의 부분의 일부를 없애기 위한 화학적ㆍ기계적 연마에서는 제1 연마용 조성물이 이용되고, 상기 트렌치의 밖에 위치하는 도체막의 부분의 잔여부 및 트렌치의 밖에 위치하는 배리어막의 부분을 없애기 위한 화학적ㆍ기계적 연마에서는 제2 연마용 조성물이 이용되며;상기 제1 연마용 조성물은 계면활성제와 규소 산화물과 카복실산과 방식제와 산화제와 물을 함유하며, 상기 계면활성제는 하기 일반식[1] ~ [7] 중의 어느 하나로 표시되는 화합물 및 그의 염으로부터 선택되는 적어도 1종을 함유하며:(일반식[1]에 있어서, R1은 8 ~ 16개의 탄소 원자를 가지는 알킬기를 표시하고, R2는 수소 원자, 메틸기, 또는 에틸기를 표시하며, R3는 1 ~ 8개의 탄소 원자를 가지는 알킬렌기, -(CH2CH2O)l-, -(CH2CH(CH3)O)m-, 또는 이들 중 적어도 2종의 조합을 표시하며, R3가 -(CH2CH2O)l- 또는 -(CH2CH(CH3)O)m-를 나타내는 경우에는, l 및 m는 1 ~ 8의 정수이며, R3가 -(CH2CH2O)l-과 -(CH2CH(CH3)O)m-의 조합을 나타내는 경우에는, l과 m의 합은 8 이하의 정수이며, X1는 카복실기 또는 설폰기를 표시함)일반식[2] 및 [3]에 있어서, R4는 8 ~ 16개의 탄소 원자를 가지는 알킬기를 표시하고, Z는 하기 화학식[i] 또는 [ii]으로 표시되는 작용기이며, Y1는 -(CH2CH2O)n-, -(CH2CH(CH3)O)p- 또는 -(CH2CH2O)n-과 -(CH2CH(CH3)O)p-의 조합을 표시하며, Y1이 -(CH2CH2O)n- 또는 -(CH2CH(CH3)O)p-를 나타내는 경우에는, n 및 p는 1 ~ 6의 정수이며, Y1가 -(CH2CH2O)n-과 -(CH2CH(CH3)O)p-의 조합을 나타내는 경우에는, n과 p의 합은 6 이하의 정수이며, X2는 인산기 또는 설폰기를 표시함(일반식[4] ~ [7]에 있어서, R5 및 R6는 각각 수소 원자, 하이드록시기 또는 8 ~ 16개의 탄소 원자를 가지는 알킬기를 표시하며, Y2 및 Y3는 각각 -(CH2CH2O)q-, -(CH2CH(CH3)O)r- 또는 -(CH2CH2O)q-와 -(CH2CH(CH3)O)r-의 조합을 표시하며, Y2 또는 Y3가 -(CH2CH2O)q- 또는 -(CH2CH(CH3)O)r-를 나타내는 경우에는, q 및 r은 1 ~ 6의 정수이며, Y2 또는 Y3가 -(CH2CH2O)q-와 -(CH2CH(CH3)O)r-의 조합을 나타내는 경우에는, q와 r의 합은 6 이하의 정수임);상기 제2 연마용 조성물은 제 1항 내지 제 5항 중 어느 한 항에 기재된 연마 조성물인 것을 특징으로 하는 연마 방법.
- 제 8항에 있어서, 상기 제1 연마용 조성물 중의 카복실산은 α-아미노산인 것을 특징으로 하는 연마 방법.
- 반도체 장치의 배선(17)을 형성하기 위하여, 트렌치(13)를 가지는 절연막(12) 위에 배리어막(14) 및 도체막(15)을 차례로 형성해서 이루어지고, 상기 배리어막 및 도체막은 각각 트렌치의 밖에 위치하는 부분 및 트렌치 안에 위치하는 부분을 가지고 있는 연마 대상물을 연마하는 방법에 있어서,상기 방법은 상기 배리어막의 상부면이 노출되도록, 트렌치의 밖에 위치하는 도체막의 부분의 일부를 화학적ㆍ기계적 연마에 의해 제거하는 공정과;상기 절연막의 상부면이 노출되도록, 트렌치의 밖에 위치하는 도체막의 부분의 잔여부 및 트렌치의 밖에 위치하는 배리어막의 부분을 화학적ㆍ기계적 연마에 의해 제거하는 공정을 구비하고;상기 트렌치의 밖에 위치하는 도체막의 부분의 일부를 없애기 위한 화학적ㆍ기계적 연마에서는 제1 연마용 조성물이 이용되고, 상기 트렌치의 밖에 위치하는 도체막의 부분의 잔여부 및 트렌치의 밖에 위치하는 배리어막의 부분을 없애기 위한 화학적ㆍ기계적 연마에서는 제2 연마용 조성물이 이용되고, 상기 제1 연마용 조성물은 α-아미노산과 벤조트리아졸 유도체와 규소 산화물과 계면활성제와 산화제와 물을 함유하고, 상기 벤조트리아졸 유도체는 하기 일반식[8]:로 표시되고, 상기 일반식[8]에 있어서, R7은 카복실기를 가지는 알킬기, 하이드록실기와 3급 아미노기를 가지는 알킬기, 하이드록시기를 가지는 알킬기 또는 그 이외의 알킬기를 표시하며,상기 제2 연마용 조성물은 제 1항 내지 제 5항 중 어느 한 항에 기재된 연마용 조성물인 것을 특징으로 하는 연마 방법.
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AT (1) | ATE463838T1 (ko) |
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- 2004-09-30 EP EP04788401A patent/EP1670047B1/en not_active Expired - Lifetime
- 2004-09-30 DE DE602004026454T patent/DE602004026454D1/de not_active Expired - Lifetime
- 2004-09-30 CN CNB2004800282002A patent/CN100435290C/zh not_active Expired - Fee Related
- 2004-09-30 WO PCT/JP2004/014373 patent/WO2005031836A1/ja active Application Filing
- 2004-09-30 TW TW093129565A patent/TW200526768A/zh unknown
- 2004-09-30 AT AT04788401T patent/ATE463838T1/de not_active IP Right Cessation
- 2004-09-30 US US10/574,115 patent/US20070176140A1/en not_active Abandoned
- 2004-09-30 KR KR1020067006163A patent/KR101110723B1/ko active IP Right Grant
Patent Citations (2)
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JP2003514374A (ja) * | 1999-11-04 | 2003-04-15 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 有機添加剤含有のtaバリアスラリー |
JP2002141314A (ja) * | 2000-08-21 | 2002-05-17 | Toshiba Corp | 化学機械研磨用スラリおよび半導体装置の製造方法 |
Cited By (2)
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KR20180113198A (ko) * | 2016-02-29 | 2018-10-15 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 이것을 사용한 연마 방법 |
KR102645587B1 (ko) | 2016-02-29 | 2024-03-11 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 이것을 사용한 연마 방법 |
Also Published As
Publication number | Publication date |
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CN100435290C (zh) | 2008-11-19 |
ATE463838T1 (de) | 2010-04-15 |
US20070176140A1 (en) | 2007-08-02 |
WO2005031836A1 (ja) | 2005-04-07 |
TW200526768A (en) | 2005-08-16 |
EP1670047B1 (en) | 2010-04-07 |
DE602004026454D1 (de) | 2010-05-20 |
KR20060089220A (ko) | 2006-08-08 |
CN1860592A (zh) | 2006-11-08 |
EP1670047A4 (en) | 2008-09-03 |
EP1670047A1 (en) | 2006-06-14 |
TWI354696B (ko) | 2011-12-21 |
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