CN107112208B - 光固化性组合物及其应用 - Google Patents

光固化性组合物及其应用 Download PDF

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Publication number
CN107112208B
CN107112208B CN201580069521.5A CN201580069521A CN107112208B CN 107112208 B CN107112208 B CN 107112208B CN 201580069521 A CN201580069521 A CN 201580069521A CN 107112208 B CN107112208 B CN 107112208B
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CN
China
Prior art keywords
film
imprinting
meth
photocurable composition
polymerizable compound
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CN201580069521.5A
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Chinese (zh)
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CN107112208A (zh
Inventor
米泽诗织
伊藤俊树
大谷智教
岩下和美
本间猛
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Canon Inc
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Canon Inc
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Priority claimed from JP2015099486A external-priority patent/JP6624808B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority claimed from PCT/JP2015/006244 external-priority patent/WO2016098345A1/en
Publication of CN107112208A publication Critical patent/CN107112208A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Polymerisation Methods In General (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
CN201580069521.5A 2014-12-19 2015-12-15 光固化性组合物及其应用 Active CN107112208B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2014-257798 2014-12-19
JP2014257798 2014-12-19
JP2015099486A JP6624808B2 (ja) 2014-07-25 2015-05-14 光硬化性組成物、これを用いた硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法
JP2015-099486 2015-05-14
JP2015-232535 2015-11-28
JP2015232535A JP6324363B2 (ja) 2014-12-19 2015-11-28 インプリント用光硬化性組成物、これを用いた膜の製造方法、光学部品の製造方法、回路基板の製造方法、電子部品の製造方法
PCT/JP2015/006244 WO2016098345A1 (en) 2014-12-19 2015-12-15 Photocurable composition for imprint, method for producing film using the same, method for producing optical component using the same, method for producing circuit board using the same, and method for producing electronic component using the same

Publications (2)

Publication Number Publication Date
CN107112208A CN107112208A (zh) 2017-08-29
CN107112208B true CN107112208B (zh) 2021-06-25

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US (2) US11003073B2 (enExample)
JP (3) JP6324363B2 (enExample)
KR (3) KR102246568B1 (enExample)
CN (1) CN107112208B (enExample)
TW (1) TWI596431B (enExample)

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US11474429B2 (en) * 2017-06-09 2022-10-18 Mitsui Chemicals, Inc. Method of producing substrate with fine uneven pattern, resin composition, and laminate
JP6550434B2 (ja) * 2017-09-29 2019-07-24 シャープ株式会社 防汚性フィルムの製造方法
CN111796385A (zh) * 2019-04-08 2020-10-20 三营超精密光电(晋城)有限公司 光学镜头、应用该光学镜头的镜头模组及电子装置
US20200339828A1 (en) * 2019-04-26 2020-10-29 Canon Kabushiki Kaisha Photocurable composition
JP2024090185A (ja) 2022-12-22 2024-07-04 デクセリアルズ株式会社 インプリント用光硬化性アクリルレジン
EP4443202A4 (en) 2021-12-24 2025-04-23 Dexerials Corporation Wire grid polarizer, method for manufacturing wire grid polarizer, projection display device, vehicle, and photo-curable acrylic resin for imprinting
JP2023125842A (ja) * 2022-02-28 2023-09-07 キヤノン株式会社 パターン形成方法、及び物品製造方法
WO2024135836A1 (ja) 2022-12-22 2024-06-27 デクセリアルズ株式会社 ワイヤグリッド偏光素子、ワイヤグリッド偏光素子の製造方法、投影表示装置及び車両
WO2024135835A1 (ja) 2022-12-22 2024-06-27 デクセリアルズ株式会社 ワイヤグリッド偏光素子、ワイヤグリッド偏光素子の製造方法、投影表示装置及び車両
US20240411225A1 (en) * 2023-06-09 2024-12-12 Canon Kabushiki Kaisha System including heating means and actinic radiation source and a method of using the same
TWI863515B (zh) * 2023-08-18 2024-11-21 光群雷射科技股份有限公司 壓印光罩製造方法

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JP2020039008A (ja) 2020-03-12
CN107112208A (zh) 2017-08-29
JP6324363B2 (ja) 2018-05-16
US11003073B2 (en) 2021-05-11
US20170351172A1 (en) 2017-12-07
KR101988782B1 (ko) 2019-06-12
JP2016117885A (ja) 2016-06-30
TWI596431B (zh) 2017-08-21
JP2018125559A (ja) 2018-08-09
KR20170094386A (ko) 2017-08-17
KR20190067264A (ko) 2019-06-14
KR20190142450A (ko) 2019-12-26
KR102059314B1 (ko) 2020-02-11
TW201624122A (zh) 2016-07-01
US20210223690A1 (en) 2021-07-22
KR102246568B1 (ko) 2021-04-30
JP6907293B2 (ja) 2021-07-21

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