CN105229790A - 固态成像器件、固态成像器件的制造方法及电子装置 - Google Patents

固态成像器件、固态成像器件的制造方法及电子装置 Download PDF

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Publication number
CN105229790A
CN105229790A CN201480028257.6A CN201480028257A CN105229790A CN 105229790 A CN105229790 A CN 105229790A CN 201480028257 A CN201480028257 A CN 201480028257A CN 105229790 A CN105229790 A CN 105229790A
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China
Prior art keywords
pixel
solid imaging
imaging element
shielding part
light shielding
Prior art date
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Pending
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CN201480028257.6A
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English (en)
Chinese (zh)
Inventor
桝田佳明
宫波勇树
阿部秀司
平野智之
山口征也
蛯子芳树
渡边一史
荻田知治
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to CN201810298758.6A priority Critical patent/CN108549121B/zh
Priority to CN202010493596.9A priority patent/CN111799284A/zh
Priority to CN202010552822.6A priority patent/CN111799290A/zh
Priority to CN201910972850.0A priority patent/CN110660819A/zh
Priority to CN202010017368.4A priority patent/CN111276501A/zh
Priority to CN202010552776.XA priority patent/CN111799289A/zh
Priority to CN202010552753.9A priority patent/CN111799288A/zh
Publication of CN105229790A publication Critical patent/CN105229790A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H04N25/633—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current by using optical black pixels
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
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    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201480028257.6A 2013-07-03 2014-06-20 固态成像器件、固态成像器件的制造方法及电子装置 Pending CN105229790A (zh)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN201810298758.6A CN108549121B (zh) 2013-07-03 2014-06-20 固态成像器件、固态成像器件的制造方法及电子装置
CN202010493596.9A CN111799284A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置
CN202010552822.6A CN111799290A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置
CN201910972850.0A CN110660819A (zh) 2013-07-03 2014-06-20 固态成像器件及固态成像器件的制造方法
CN202010017368.4A CN111276501A (zh) 2013-07-03 2014-06-20 固态成像器件及固态成像器件的制造方法
CN202010552776.XA CN111799289A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置
CN202010552753.9A CN111799288A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013-139830 2013-07-03
JP2013139830 2013-07-03
JP2014104167A JP6303803B2 (ja) 2013-07-03 2014-05-20 固体撮像装置およびその製造方法
JP2014-104167 2014-05-20
PCT/JP2014/066400 WO2015001987A1 (ja) 2013-07-03 2014-06-20 固体撮像装置およびその製造方法、並びに電子機器

Related Child Applications (7)

Application Number Title Priority Date Filing Date
CN202010552822.6A Division CN111799290A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置
CN202010017368.4A Division CN111276501A (zh) 2013-07-03 2014-06-20 固态成像器件及固态成像器件的制造方法
CN201810298758.6A Division CN108549121B (zh) 2013-07-03 2014-06-20 固态成像器件、固态成像器件的制造方法及电子装置
CN201910972850.0A Division CN110660819A (zh) 2013-07-03 2014-06-20 固态成像器件及固态成像器件的制造方法
CN202010552776.XA Division CN111799289A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置
CN202010493596.9A Division CN111799284A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置
CN202010552753.9A Division CN111799288A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置

Publications (1)

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CN105229790A true CN105229790A (zh) 2016-01-06

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Family Applications (8)

Application Number Title Priority Date Filing Date
CN202010552822.6A Withdrawn CN111799290A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置
CN202010017368.4A Pending CN111276501A (zh) 2013-07-03 2014-06-20 固态成像器件及固态成像器件的制造方法
CN202010493596.9A Withdrawn CN111799284A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置
CN202010552776.XA Withdrawn CN111799289A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置
CN202010552753.9A Pending CN111799288A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置
CN201810298758.6A Active CN108549121B (zh) 2013-07-03 2014-06-20 固态成像器件、固态成像器件的制造方法及电子装置
CN201910972850.0A Pending CN110660819A (zh) 2013-07-03 2014-06-20 固态成像器件及固态成像器件的制造方法
CN201480028257.6A Pending CN105229790A (zh) 2013-07-03 2014-06-20 固态成像器件、固态成像器件的制造方法及电子装置

Family Applications Before (7)

Application Number Title Priority Date Filing Date
CN202010552822.6A Withdrawn CN111799290A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置
CN202010017368.4A Pending CN111276501A (zh) 2013-07-03 2014-06-20 固态成像器件及固态成像器件的制造方法
CN202010493596.9A Withdrawn CN111799284A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置
CN202010552776.XA Withdrawn CN111799289A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置
CN202010552753.9A Pending CN111799288A (zh) 2013-07-03 2014-06-20 光检测器件及电子装置
CN201810298758.6A Active CN108549121B (zh) 2013-07-03 2014-06-20 固态成像器件、固态成像器件的制造方法及电子装置
CN201910972850.0A Pending CN110660819A (zh) 2013-07-03 2014-06-20 固态成像器件及固态成像器件的制造方法

Country Status (5)

Country Link
US (9) US9819846B2 (ko)
JP (1) JP6303803B2 (ko)
KR (4) KR102179733B1 (ko)
CN (8) CN111799290A (ko)
WO (1) WO2015001987A1 (ko)

Cited By (18)

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CN105826471A (zh) * 2016-03-24 2016-08-03 吉林大学 一种双仿生陷光兼具等离子体表面共振效应的聚合物太阳能电池及其制备方法
CN108463887A (zh) * 2016-01-21 2018-08-28 索尼公司 摄像器件和电子设备
CN109728008A (zh) * 2017-10-31 2019-05-07 台湾积体电路制造股份有限公司 背面照光式bsi图像传感器
CN109841641A (zh) * 2017-11-27 2019-06-04 台湾积体电路制造股份有限公司 半导体装置与影像感测器集成芯片的形成方法
CN109841574A (zh) * 2017-11-27 2019-06-04 台湾积体电路制造股份有限公司 Cmos图像传感器及其形成方法
CN110875340A (zh) * 2018-08-29 2020-03-10 三星电子株式会社 图像传感器
CN110890389A (zh) * 2018-09-07 2020-03-17 三星电子株式会社 图像传感器及其制造方法
CN111279483A (zh) * 2018-01-11 2020-06-12 索尼半导体解决方案公司 固态成像装置和电子设备
CN111295762A (zh) * 2017-11-07 2020-06-16 索尼半导体解决方案公司 固态摄像元件、制造方法和电子设备
US10692910B2 (en) 2016-03-15 2020-06-23 Sony Corporation Solid-state imaging element and electronic device
CN111354751A (zh) * 2018-12-21 2020-06-30 三星电子株式会社 背侧照明图像传感器
US10715751B2 (en) 2015-12-11 2020-07-14 Sony Corporation Solid-state image pickup element, image pickup device, and method of manufacturing solid-state image pickup element
US10910504B2 (en) 2015-12-07 2021-02-02 Sony Semiconductor Solutions Corporation Solid-state imaging element, imaging device, and method for manufacturing solid-state imaging element
CN113169195A (zh) * 2018-10-31 2021-07-23 浜松光子学株式会社 固体摄像装置
CN113167730A (zh) * 2018-11-26 2021-07-23 索尼半导体解决方案公司 用于检测生物物质的芯片、生物物质检测装置以及生物物质检测系统
CN113314625A (zh) * 2020-02-11 2021-08-27 台湾积体电路制造股份有限公司 集成电路、集成器件及其形成方法
CN116779630A (zh) * 2023-08-22 2023-09-19 合肥晶合集成电路股份有限公司 一种图像传感器及其制造方法
US12062681B2 (en) 2019-04-12 2024-08-13 Sony Semiconductor Solutions Corporation Solid-state imaging apparatus

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JP6303803B2 (ja) * 2013-07-03 2018-04-04 ソニー株式会社 固体撮像装置およびその製造方法
US9653507B2 (en) 2014-06-25 2017-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Deep trench isolation shrinkage method for enhanced device performance
US10008530B2 (en) * 2015-01-30 2018-06-26 Taiwan Semiconductor Manufacturing Company Ltd. Image sensing device and manufacturing method thereof
JP7023109B2 (ja) * 2015-06-05 2022-02-21 ソニーグループ株式会社 固体撮像装置
KR20160149847A (ko) 2015-06-19 2016-12-28 삼성전자주식회사 반사 방지 필름, 그 필름을 포함한 전자 장치, 및 그 필름의 제조방법과 제조장치
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