FR3056333B1 - Capteur d'images a efficacite quantique amelioree pour les rayonnements infrarouges - Google Patents
Capteur d'images a efficacite quantique amelioree pour les rayonnements infrarouges Download PDFInfo
- Publication number
- FR3056333B1 FR3056333B1 FR1658898A FR1658898A FR3056333B1 FR 3056333 B1 FR3056333 B1 FR 3056333B1 FR 1658898 A FR1658898 A FR 1658898A FR 1658898 A FR1658898 A FR 1658898A FR 3056333 B1 FR3056333 B1 FR 3056333B1
- Authority
- FR
- France
- Prior art keywords
- image sensor
- infrared radiation
- efficient image
- enhanced quantum
- quantum efficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005855 radiation Effects 0.000 title 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1658898A FR3056333B1 (fr) | 2016-09-22 | 2016-09-22 | Capteur d'images a efficacite quantique amelioree pour les rayonnements infrarouges |
| CN201720235765.2U CN207320115U (zh) | 2016-09-22 | 2017-03-10 | 集成图像传感器和电子系统 |
| CN201710142417.5A CN107871754B (zh) | 2016-09-22 | 2017-03-10 | 用于红外辐射的具有提高的量子效率的图像传感器 |
| US15/460,992 US10347677B2 (en) | 2016-09-22 | 2017-03-16 | Image sensor with improved quantum efficiency for infrared radiation |
| US16/414,409 US10475836B2 (en) | 2016-09-22 | 2019-05-16 | Image sensor with improved quantum efficiency for infrared radiation |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1658898A FR3056333B1 (fr) | 2016-09-22 | 2016-09-22 | Capteur d'images a efficacite quantique amelioree pour les rayonnements infrarouges |
| FR1658898 | 2016-09-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR3056333A1 FR3056333A1 (fr) | 2018-03-23 |
| FR3056333B1 true FR3056333B1 (fr) | 2018-10-19 |
Family
ID=57233743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1658898A Expired - Fee Related FR3056333B1 (fr) | 2016-09-22 | 2016-09-22 | Capteur d'images a efficacite quantique amelioree pour les rayonnements infrarouges |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US10347677B2 (fr) |
| CN (2) | CN107871754B (fr) |
| FR (1) | FR3056333B1 (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3056333B1 (fr) * | 2016-09-22 | 2018-10-19 | Stmicroelectronics (Crolles 2) Sas | Capteur d'images a efficacite quantique amelioree pour les rayonnements infrarouges |
| JP2021168316A (ja) * | 2018-07-13 | 2021-10-21 | ソニーセミコンダクタソリューションズ株式会社 | センサ素子および電子機器 |
| CN110739322A (zh) * | 2018-07-18 | 2020-01-31 | 索尼半导体解决方案公司 | 受光元件以及测距模块 |
| EP3605606B1 (fr) * | 2018-08-03 | 2022-06-15 | ams Sensors Belgium BVBA | Système d'imagerie comprenant une source de lumière infrarouge et un capteur d'image |
| US10957727B2 (en) * | 2018-09-26 | 2021-03-23 | Semiconductor Components Industries, Llc | Phase detection pixels with diffractive lenses |
| US20200227458A1 (en) * | 2019-01-11 | 2020-07-16 | Semiconductor Components Industries, Llc | Image sensors with diffractive lenses in a semiconductor substrate |
| US11309348B2 (en) * | 2019-09-11 | 2022-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | High density image sensor |
| FR3102633B1 (fr) | 2019-10-24 | 2022-08-05 | St Microelectronics Crolles 2 Sas | Capteur d'images |
| CN110767732B (zh) * | 2019-10-31 | 2022-04-05 | 昆山国显光电有限公司 | 显示装置 |
| US20220020787A1 (en) * | 2020-07-17 | 2022-01-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, semiconductor image sensor, and method of manufacturing the same |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110164156A1 (en) * | 2009-07-24 | 2011-07-07 | Masao Hiramoto | Image pickup device and solid-state image pickup element |
| FR2954587B1 (fr) * | 2009-11-10 | 2012-07-20 | St Microelectronics Sa | Procede de formation d'un capteur d'images eclaire par la face arriere |
| JP5708025B2 (ja) * | 2011-02-24 | 2015-04-30 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
| US8716823B2 (en) * | 2011-11-08 | 2014-05-06 | Aptina Imaging Corporation | Backside image sensor pixel with silicon microlenses and metal reflector |
| JP6303803B2 (ja) * | 2013-07-03 | 2018-04-04 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
| KR102159166B1 (ko) * | 2014-05-09 | 2020-09-23 | 삼성전자주식회사 | 색분리 소자 및 상기 색분리 소자를 포함하는 이미지 센서 |
| FR3056333B1 (fr) * | 2016-09-22 | 2018-10-19 | Stmicroelectronics (Crolles 2) Sas | Capteur d'images a efficacite quantique amelioree pour les rayonnements infrarouges |
-
2016
- 2016-09-22 FR FR1658898A patent/FR3056333B1/fr not_active Expired - Fee Related
-
2017
- 2017-03-10 CN CN201710142417.5A patent/CN107871754B/zh active Active
- 2017-03-10 CN CN201720235765.2U patent/CN207320115U/zh active Active
- 2017-03-16 US US15/460,992 patent/US10347677B2/en active Active
-
2019
- 2019-05-16 US US16/414,409 patent/US10475836B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20180083057A1 (en) | 2018-03-22 |
| FR3056333A1 (fr) | 2018-03-23 |
| US10347677B2 (en) | 2019-07-09 |
| CN207320115U (zh) | 2018-05-04 |
| CN107871754A (zh) | 2018-04-03 |
| CN107871754B (zh) | 2022-06-03 |
| US20190280032A1 (en) | 2019-09-12 |
| US10475836B2 (en) | 2019-11-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PLFP | Fee payment |
Year of fee payment: 2 |
|
| PLSC | Publication of the preliminary search report |
Effective date: 20180323 |
|
| PLFP | Fee payment |
Year of fee payment: 3 |
|
| PLFP | Fee payment |
Year of fee payment: 4 |
|
| ST | Notification of lapse |
Effective date: 20210506 |