FR3102633B1 - Capteur d'images - Google Patents

Capteur d'images Download PDF

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Publication number
FR3102633B1
FR3102633B1 FR1911935A FR1911935A FR3102633B1 FR 3102633 B1 FR3102633 B1 FR 3102633B1 FR 1911935 A FR1911935 A FR 1911935A FR 1911935 A FR1911935 A FR 1911935A FR 3102633 B1 FR3102633 B1 FR 3102633B1
Authority
FR
France
Prior art keywords
image sensor
pixel
silicon
interface
photoconversion region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1911935A
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English (en)
Other versions
FR3102633A1 (fr
Inventor
Axel Crocherie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1911935A priority Critical patent/FR3102633B1/fr
Priority to US17/077,966 priority patent/US11791355B2/en
Publication of FR3102633A1 publication Critical patent/FR3102633A1/fr
Application granted granted Critical
Publication of FR3102633B1 publication Critical patent/FR3102633B1/fr
Priority to US18/465,063 priority patent/US20230420472A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H04N23/21—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only from near infrared [NIR] radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Capteur d'images La présente description concerne un capteur d'images (1) comprenant des pixels (3) comportant chacun une région de photoconversion (5) en silicium entourée d'au moins un matériau d'indice de réfraction inférieur à l'indice de réfraction du silicium, l'interface (7, 11, 13, 15, 23, 25, 27, 29) entre la région de photoconversion (5) du pixel (3) et ledit matériau étant configurée pour qu'au moins un rayon (45) atteignant la région de photoconversion (5) du pixel (3) subisse au moins une réflexion totale sur cette interface (23, 25, 27, 29). Figure pour l'abrégé : Fig. 1
FR1911935A 2019-10-24 2019-10-24 Capteur d'images Active FR3102633B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1911935A FR3102633B1 (fr) 2019-10-24 2019-10-24 Capteur d'images
US17/077,966 US11791355B2 (en) 2019-10-24 2020-10-22 Image sensor
US18/465,063 US20230420472A1 (en) 2019-10-24 2023-09-11 Image sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1911935A FR3102633B1 (fr) 2019-10-24 2019-10-24 Capteur d'images
FR1911935 2019-10-24

Publications (2)

Publication Number Publication Date
FR3102633A1 FR3102633A1 (fr) 2021-04-30
FR3102633B1 true FR3102633B1 (fr) 2022-08-05

Family

ID=69572117

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1911935A Active FR3102633B1 (fr) 2019-10-24 2019-10-24 Capteur d'images

Country Status (2)

Country Link
US (2) US11791355B2 (fr)
FR (1) FR3102633B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117882193A (zh) * 2021-09-29 2024-04-12 索尼半导体解决方案公司 摄像元件、摄像装置和制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7061028B2 (en) * 2003-03-12 2006-06-13 Taiwan Semiconductor Manufacturing, Co., Ltd. Image sensor device and method to form image sensor device
US20050274988A1 (en) * 2004-06-01 2005-12-15 Hong Sungkwon C Imager with reflector mirrors
US8885987B2 (en) * 2007-09-06 2014-11-11 Quantum Semiconductor Llc Photonic via waveguide for pixel arrays
US20120273652A1 (en) * 2011-04-28 2012-11-01 Aptina Imaging Corporation Systems and methods for image sensing
US9825073B2 (en) * 2014-05-23 2017-11-21 Omnivision Technologies, Inc. Enhanced back side illuminated near infrared image sensor
FR3056333B1 (fr) * 2016-09-22 2018-10-19 Stmicroelectronics (Crolles 2) Sas Capteur d'images a efficacite quantique amelioree pour les rayonnements infrarouges
US10504952B2 (en) * 2017-08-30 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Increased optical path for long wavelength light by grating structure
CN108281447A (zh) * 2018-01-30 2018-07-13 德淮半导体有限公司 半导体装置及其制作方法
DE102018108794B3 (de) * 2018-04-13 2019-05-02 pmdtechnologies ag Lichtlaufzeitpixel und Lichtlaufzeitsensor mit entsprechenden Pixel

Also Published As

Publication number Publication date
US11791355B2 (en) 2023-10-17
FR3102633A1 (fr) 2021-04-30
US20210126034A1 (en) 2021-04-29
US20230420472A1 (en) 2023-12-28

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