JP2018181910A - 光半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 83
- 230000003287 optical effect Effects 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000006243 chemical reaction Methods 0.000 claims abstract description 26
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052796 boron Inorganic materials 0.000 claims abstract description 24
- 238000009825 accumulation Methods 0.000 claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 238000001020 plasma etching Methods 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Abstract
【解決手段】光半導体装置1の製造方法は、複数の光電変換部2を有する半導体基板3を準備する第1ステップと、第1ステップの後に、各光電変換部2を互いに隔てるように半導体基板3にトレンチ9を形成する第2ステップと、第2ステップの後に、気相成長法によってトレンチ9の内面9aにボロン層11を形成する第3ステップと、第3ステップの後に、ボロン層11に熱拡散処理を施すことにより、トレンチ9の内面9aに沿って半導体基板3にアキュムレーション層12を形成する第4ステップと、を備える。
【選択図】図2
Description
Claims (3)
- 複数の光電変換部を有する半導体基板を準備する第1ステップと、
前記第1ステップの後に、前記複数の光電変換部のそれぞれを互いに隔てるように前記半導体基板にトレンチを形成する第2ステップと、
前記第2ステップの後に、気相成長法によって前記トレンチの内面にボロン層を形成する第3ステップと、
前記第3ステップの後に、前記ボロン層に熱拡散処理を施すことにより、前記トレンチの前記内面に沿って前記半導体基板にアキュムレーション層を形成する第4ステップと、を備える、光半導体装置の製造方法。 - 前記第2ステップにおいては、反応性イオンエッチングによって前記半導体基板に前記トレンチを形成する、請求項1に記載の光半導体装置の製造方法。
- 前記第4ステップの後に、前記トレンチ内に遮光層を形成する第5ステップを更に備える、請求項1又は2に記載の光半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017074499A JP2018181910A (ja) | 2017-04-04 | 2017-04-04 | 光半導体装置の製造方法 |
US15/942,759 US20180286899A1 (en) | 2017-04-04 | 2018-04-02 | Method of manufacturing optical semiconductor device |
CN201810287582.4A CN108695344A (zh) | 2017-04-04 | 2018-04-03 | 光半导体装置的制造方法 |
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JP2017074499A JP2018181910A (ja) | 2017-04-04 | 2017-04-04 | 光半導体装置の製造方法 |
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JP2017074499A Pending JP2018181910A (ja) | 2017-04-04 | 2017-04-04 | 光半導体装置の製造方法 |
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US (1) | US20180286899A1 (ja) |
JP (1) | JP2018181910A (ja) |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6303803B2 (ja) | 2013-07-03 | 2018-04-04 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
US10658410B2 (en) * | 2018-08-27 | 2020-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor having improved full well capacity and related method of formation |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH07240534A (ja) * | 1993-03-16 | 1995-09-12 | Seiko Instr Inc | 光電変換半導体装置及びその製造方法 |
JPH08172214A (ja) * | 1994-08-24 | 1996-07-02 | Seiko Instr Inc | 光電変換半導体装置の製造方法 |
JP2002057318A (ja) * | 2000-08-07 | 2002-02-22 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2008300693A (ja) * | 2007-05-31 | 2008-12-11 | Sharp Corp | Cmos型固体撮像装置およびその製造方法、電子情報機器 |
JP2015088568A (ja) * | 2013-10-29 | 2015-05-07 | 株式会社東芝 | 固体撮像装置および固体撮像装置の製造方法 |
JP2016082067A (ja) * | 2014-10-16 | 2016-05-16 | 株式会社東芝 | 固体撮像装置および固体撮像装置の製造方法 |
JP2016100347A (ja) * | 2014-11-18 | 2016-05-30 | ソニー株式会社 | 固体撮像装置及びその製造方法、並びに電子機器 |
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JPH01132176A (ja) * | 1987-11-18 | 1989-05-24 | Canon Inc | 光電変換装置 |
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ITTO20080046A1 (it) * | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
JP5810551B2 (ja) * | 2011-02-25 | 2015-11-11 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
JP2014130922A (ja) * | 2012-12-28 | 2014-07-10 | Toshiba Corp | 半導体装置及びその製造方法 |
KR20150118638A (ko) * | 2014-04-14 | 2015-10-23 | 에스케이하이닉스 주식회사 | 이미지 센서 및 그 제조 방법 |
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FR3049389A1 (fr) * | 2016-03-22 | 2017-09-29 | St Microelectronics Crolles 2 Sas | Mur d'isolement et son procede de fabrication |
JP6808348B2 (ja) * | 2016-04-28 | 2021-01-06 | キヤノン株式会社 | 光電変換装置およびカメラ |
JP2017224741A (ja) * | 2016-06-16 | 2017-12-21 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2018181911A (ja) * | 2017-04-04 | 2018-11-15 | 浜松ホトニクス株式会社 | 光半導体装置 |
KR102551489B1 (ko) * | 2017-10-13 | 2023-07-04 | 삼성전자주식회사 | 이미지 센서 |
US10825853B2 (en) * | 2017-11-09 | 2020-11-03 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor image sensor device with deep trench isolations and method for manufacturing the same |
US10658409B2 (en) * | 2017-11-17 | 2020-05-19 | Taiwan Semiconductor Manufacturing Company Ltd. U. | Semiconductor structure and method of manufacturing the same |
JP6779929B2 (ja) * | 2018-02-09 | 2020-11-04 | キヤノン株式会社 | 光電変換装置および機器 |
-
2017
- 2017-04-04 JP JP2017074499A patent/JP2018181910A/ja active Pending
-
2018
- 2018-04-02 US US15/942,759 patent/US20180286899A1/en not_active Abandoned
- 2018-04-03 CN CN201810287582.4A patent/CN108695344A/zh active Pending
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JPH07240534A (ja) * | 1993-03-16 | 1995-09-12 | Seiko Instr Inc | 光電変換半導体装置及びその製造方法 |
JPH08172214A (ja) * | 1994-08-24 | 1996-07-02 | Seiko Instr Inc | 光電変換半導体装置の製造方法 |
JP2002057318A (ja) * | 2000-08-07 | 2002-02-22 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2008300693A (ja) * | 2007-05-31 | 2008-12-11 | Sharp Corp | Cmos型固体撮像装置およびその製造方法、電子情報機器 |
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