CN108695344A - 光半导体装置的制造方法 - Google Patents

光半导体装置的制造方法 Download PDF

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CN108695344A
CN108695344A CN201810287582.4A CN201810287582A CN108695344A CN 108695344 A CN108695344 A CN 108695344A CN 201810287582 A CN201810287582 A CN 201810287582A CN 108695344 A CN108695344 A CN 108695344A
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村松雅治
宫﨑康人
高桥弘孝
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Abstract

本发明涉及光半导体装置的制造方法。光半导体装置(1)的制造方法具备：准备具有多个光电转换部的半导体基板、以将多个光电转换部的各个互相隔开的方式将沟槽形成于半导体基板、由气相生长法将硼层形成于沟槽的内面、通过对硼层施以热扩散处理从而沿着沟槽的内面将累积层形成于半导体基板。

Description

光半导体装置的制造方法
技术领域
本发明涉及光半导体装置的制造方法。
背景技术
众所周知有具备具有多个光电转换部的半导体基板并且以互相隔开各个光电转换部的方式将沟槽(trench)形成于该半导体基板的光半导体装置(例如，参照日本专利申请公开2003-86827号公报)。
在如以上所述那样的光半导体装置中，为了将互相相邻的光电转换部的间隔较窄地维持且更加可靠地抑制在互相相邻的光电转换部之间的串扰的发生，会有优选形成开口的宽度窄而且深的沟槽的情况。但是，在形成这样的沟槽的时候，如果沿着沟槽的内面在半导体基板上产生缺陷的话，则恐怕该缺陷会成为产生暗电流的主要原因。因此，会有通过离子注入沿着沟槽的内面将累积(accumulation)层形成于半导体基板的情况。但是，在开口的宽度窄而且深的沟槽中，通过离子注入将累积层形成至沟槽的最深部是困难的。
发明内容
本发明的目的在于，提供一种即使是开口的宽度窄而且深的沟槽也能够将累积层可靠地形成至沟槽的最深部的光半导体装置的制造方法。
一个方面的光半导体装置的制造方法具备：准备具有多个光电转换部的半导体基板、以互相隔开多个光电转换部的各个的方式将沟槽形成于半导体基板、由气相生长法将硼层形成于沟槽的内面、通过对硼层施以热扩散处理从而沿着沟槽的内面将累积层形成于半导体基板。
在该光半导体装置的制造方法中，由气相生长法将硼层形成于沟槽的内面。由此，即使是开口的宽度窄而且深的沟槽也各向同性地将硼层形成于沟槽的内面。因此，由该硼层的热扩散而被形成的累积层也沿着沟槽的内面被均匀地形成于半导体基板。因此，根据该光半导体装置的制造方法，即使是开口的宽度窄而且深的沟槽也能够可靠地将累积层形成至沟槽的最深部。
在一个方面的光半导体装置的制造方法中，在形成沟槽时，也可以通过反应性离子蚀刻将沟槽形成于半导体基板。由此，能够形成开口的宽度窄而且深的沟槽。
一个方面的光半导体装置的制造方法也可以进一步具备在形成累积层之后将遮光层形成于沟槽内。由此，在被制造的光半导体装置中，能够更加可靠地抑制在互相相邻的光电转换部之间的串扰的发生。
根据本发明，能够提供一种即使是开口的宽度窄而且深的沟槽也能够将累积层可靠地形成至沟槽的最深部的光半导体装置的制造方法。
附图说明
图1是一个实施方式的光半导体装置的平面图。
图2是沿着图1所表示的II-II线的截面图。
图3是用于说明图1所表示的光半导体装置的制造方法的截面图。
图4是用于说明图1所表示的光半导体装置的制造方法的截面图。
图5是用于说明图1所表示的光半导体装置的制造方法的截面图。
图6是用于说明图1所表示的光半导体装置的制造方法的截面图。
图7是用于说明图1所表示的光半导体装置的制造方法的截面图。
图8是用于说明图1所表示的光半导体装置的制造方法的截面图。
具体实施方式
以下，参照附图，对本发明的实施方式进行详细的说明。还有，在各个附图中将相同符号标注于相同或者相当部分，并省略重复的说明。
如图1以及图2所示，光半导体装置1具备具有多个光电转换部2的半导体基板3。多个光电转换部2通过多个半导体层4以矩阵状被形成于半导体基板3中沿着表面3a的部分而构成。各个光电转换部2构成像素。即，光半导体装置1为固体摄像装置。半导体基板3例如是由p型硅构成的半导体基板(第1导电类型的半导体基板)。半导体层4例如是添加了n型的杂质的半导体层(第2导电类型的半导体层)。
以覆盖多个半导体层4的方式绝缘层5,6,7,8按该顺序被层叠于半导体基板3的表面3a。绝缘层5,7,8例如是氧化硅膜。绝缘层6例如是氮化硅膜。绝缘层5,6,7例如作为栅绝缘膜等来发挥功能。绝缘层8例如作为保护膜等来发挥功能。配线等(没有图示)也被形成于半导体基板3的表面3a。
以互相隔开各个光电转换部2的方式将沟槽9形成于半导体基板3。沟槽9在半导体基板3的表面3a进行开口。沟槽9在从垂直于半导体基板3的表面3a的方向观察的情况下以通过互相相邻的光电转换部2之间的方式被形成为格子状。沟槽9的开口的宽度例如是0.5μm左右，沟槽9的深度例如是10μm左右。
在沟槽9的内面(具体来说，侧面以及底面)9a，形成有硼层11。硼层11以连续地覆盖沟槽9的内面9a的全体的方式被形成。累积层12被形成于半导体基板3中沿着沟槽9的内面9a的部分。累积层12为硼层11的一部分被扩散到半导体基板3中沿着沟槽9的内面9a的部分的层。通过累积层12被形成于半导体基板3中沿着沟槽9的内面9a的部分，从而能够抑制起因于沿着沟槽9的内面9a在半导体基板3上产生的缺陷的暗电流的发生。
绝缘层7从半导体基板3的表面3a到达至沟槽9内并在沟槽9内覆盖硼层11。在沟槽9内，在绝缘层7上，形成有遮光层13。遮光层13被绝缘层8覆盖。遮光层13例如通过钨或者多晶硅等遮光性材料经由绝缘层7而被填充于沟槽9内而构成。通过绝缘层7介于硼层11与遮光层13之间，从而遮光层13与硼层11以及半导体基板3电绝缘。因此，在夹着沟槽9而互相相邻的光电转换部2，能够防止经由遮光层13而发生电泄露。除了以互相隔开各个光电转换部2的方式将沟槽9形成于半导体基板3之外，还通过将遮光层13形成于沟槽9内从而能够进一步可靠地抑制在互相相邻的光电转换部2之间的串扰的发生。还有，用于提高遮光层13的紧贴性的缓冲层也可以被设置于绝缘层7与遮光层13之间。该缓冲层例如通过将TiN以及Ti按该顺序层叠于绝缘层7上来构成。
对如以上所述构成的光半导体装置1的制造方法进行说明。首先，如图3所示，准备具有多个光电转换部2的半导体基板3(第1步骤)。接着，将绝缘层5,6依次层叠于半导体基板3的表面3a。接着，如图4所示，将抗蚀剂层50形成于绝缘层6上，由光刻将对应于沟槽9的开口的狭缝状的开口50a形成于抗蚀剂层50。接着，由等离子蚀刻将对应于开口50a的狭缝状的开口6a,5a分别形成于绝缘层6,5。接着(在第1步骤之后)，由反应性离子蚀刻(RIE)将沟槽9形成于半导体基板3(第2步骤)。由此，以互相隔开各个光电转换部2的方式将沟槽9形成于半导体基板3。
接着(在第2步骤之后)，除去抗蚀剂层50，如图5所示，由气相生长法将硼层11形成于沟槽9的内面9a(第3步骤)。硼层11例如由CVD(Chemical Vapor Deposition(化学气相沉积))外延生长等气相生长法以数nm～数十nm的厚度各向同性地被形成于沟槽9的内面9a。接着(第3步骤之后)，如图6所示，通过对硼层11施以热扩散处理，从而沿着沟槽9的内面9a将累积层12形成于半导体基板3(第4步骤)。
接着，如图7所示，将绝缘层7层叠于绝缘层6上以及硼层11上。接着(在第4步骤之后)，如图8所示，例如通过经由绝缘层7将钨或者多晶硅等遮光性材料填充于沟槽9内，从而将遮光层13形成于沟槽9内(第5步骤)。此时，因为沟槽9的开口的宽度被绝缘层7限制，所以遮光性材料向沟槽9内的填充均匀地被适宜地进行。接着，将遮光层13通过回蚀刻(etchback)平坦化，如图2所示，以覆盖遮光层13的方式将绝缘层8层叠于绝缘层7上。根据以上所述，得到光半导体装置1。
在以上所述的光半导体装置1的制造方法中，由气相生长法将硼层11形成于沟槽9的内面9a。由此，即使是开口的宽度窄而且深的沟槽9，也在沟槽9的内面9a各向同性地形成有硼层11。因此，由该硼层11的热扩散而被形成的累积层12也沿着沟槽9的内面9a被均匀地形成于半导体基板3。另外，由于硼的分子尺寸小，因此，在硼层11中热扩散良好地进行。因此，根据光半导体装置1的制造方法，即使是开口的宽度窄而且深的沟槽9，也能够可靠地将累积层12形成至沟槽9的最深部。
另外，在以上所述的光半导体装置1的制造方法中，由反应性离子蚀刻将沟槽9形成于半导体基板3。由此，能够形成开口的宽度窄而且深的沟槽9。还有，如果实施反应性离子蚀刻的话，则因为缺陷容易沿着沟槽9的内面9a产生于半导体基板3，所以能够可靠地将累积层12形成至沟槽9的最深部的该制造方法是特别有效的。
另外，在以上所述的光半导体装置1的制造方法中，将遮光层13形成于沟槽9内。由此，在被制造的光半导体装置1中，能够进一步可靠地抑制在互相相邻的光电转换部2之间的串扰的发生。
以上，对本发明的一个实施方式进行了说明，但是，本发明并不限定于以上所述的实施方式。例如，也可以在从垂直于半导体基板3的表面3a的方向观察的情况下，多个沟槽9以包围各个光电转换部2的方式分别被形成为环状。另外，也可以不将遮光层13形成于沟槽9内。在此情况下，如果以互相隔开各个光电转换部2的方式将沟槽9形成于半导体基板3的话，则也能够抑制在互相相邻的光电转换部2之间的串扰的发生。另外，在光半导体装置1为固体摄像装置的情况下，可以是表面入射型也可以是背面入射型。

Claims (3)

1.一种光半导体装置的制造方法，其特征在于：
具备：
准备具有多个光电转换部的半导体基板；
以将所述多个光电转换部的各个互相隔开的方式将沟槽形成于所述半导体基板；
由气相生长法将硼层形成于所述沟槽的内面；和
通过对所述硼层施以热扩散处理从而沿着所述沟槽的所述内面将累积层形成于所述半导体基板。
2.如权利要求1所述的光半导体装置的制造方法，其特征在于：
在形成所述沟槽时，通过反应性离子蚀刻将所述沟槽形成于所述半导体基板。
3.如权利要求1或2所述的光半导体装置的制造方法，其特征在于：
进一步具备：在形成所述累积层之后，将遮光层形成于所述沟槽内。
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