JP2013183161A - 裏面照射型センサデバイスおよびその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 58
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000002019 doping agent Substances 0.000 claims description 6
- 238000012937 correction Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 82
- 230000008569 process Effects 0.000 description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000011241 protective layer Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical group [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052986 germanium hydride Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- YZYDPPZYDIRSJT-UHFFFAOYSA-K boron phosphate Chemical compound [B+3].[O-]P([O-])([O-])=O YZYDPPZYDIRSJT-UHFFFAOYSA-K 0.000 description 1
- 229910000149 boron phosphate Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005365 phosphate glass Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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Abstract
【解決手段】裏面照射型(BSI)センサデバイスは、表側の表面および裏側の表面を有する基板210、前記基板内にある感光性ダイオード、および前記基板の前記裏側の表面上にあるBドープのエピタキシャルシリコンゲルマニウム(epi−SiGe)層201から成る。前記Bドープのエピタキシャルシリコンゲルマニウム層は制御可能なP型層であり、pn接合を形成する。
【選択図】図2(d)
Description
Ge前駆体は、モノゲルマン(GeH4)、または四塩化ゲルマニウム(GeCl4)が好ましく、モノゲルマンが更に好ましい。温度は約500〜750°Cが好ましく、約600〜700°Cがより好ましい。圧力は、約5〜100トールが好ましく、約10〜600トールが更に好ましい。epi−SiGeシード層は、BSIの薄化プロセス中に生じたシリコンの表面の損傷を修復でき、且つシリコンより4%大きい原子のゲルマニウムは、量子効率を高める。
201 epi−SiGeシード層
202 キャリアウエハ
203 金属コンタクト
204 誘電体層
208 マイクロレンズ
209 カラーフィルター
210 シリコン基板
211 ボンディングプロセス
213 薄化プロセス
217 ドーピングプロセス
230 IDL層
231 コンタクト
240 IMD層
250 保護層
281 n型ドープ領域
283 重ドープのp型領域
284 ソース/ドレイン領域
285 ゲート絶縁膜
287 ゲート電極
288 側壁のスペーサ
291 表側
293 裏側293
294 分離領域
296 ライナー酸化物膜
297 感光性ダイオード
299 トランジスタ
Claims (10)
- 裏面照射型(BSI)センサデバイスであって、
表側の表面および裏側の表面を有する基板、
前記基板内にある感光性ダイオード、および
前記基板の前記裏側の表面上にあるBドープのエピタキシャルシリコンゲルマニウム(epi−SiGe)層を含むBSIセンサデバイス。 - 前記Bドープのepi−SiGe層は、約100〜700オングストロームの範囲の厚さを有する請求項1記載のBSIセンサデバイス。
- 前記Bドープのepi−SiGe層上にある金属遮蔽層を更に含む請求項1記載のBSIセンサデバイス。
- 前記Bドープのepi−SiGe層上にある誘電体層を更に含む請求項1記載のBSIセンサデバイス。
- 前記Bドープのepi−SiGe層上にあるマイクロレンズを更に含む請求項1記載のBSIセンサデバイス。
- 裏面照射型(BSI)センサデバイスの製造方法であって、
感光性ダイオードを含む基板の表側にキャリアウエハを接合するステップ、
前記キャリアウエハが底部に位置するように前記キャリアウエハと前記基板を反転させるステップ、
前記基板の裏側で前記基板を薄化するステップ、
前記基板の裏側で前記薄化された基板上にepi−SiGeシード層を形成するステップ、
前記epi−SiGeシード層にB型ドーパントをドープし、Bドープのepi−SiGe層を形成するステップを含む方法。 - 前記Bドープのepi−SiGe層に金属遮蔽層を形成し、黒レベル補正を提供するステップを更に含む請求項6記載の方法。
- 前記金属遮蔽層に誘電体層を形成するステップを更に含む請求項7記載の方法。
- 前記Bドープのepi−SiGe層にマイクロレンズを形成するステップを更に含む請求項6記載の方法。
- 画素アレイの複数の感光素子を含む基板に設置された画素アレイ、
前記基板の裏側の表面に設置されたBドープのepi−SiGe層、
前記Bドープのepi−SiGe層に設置された金属遮蔽層、
前記金属遮蔽層に設置された誘電体層、
前記Bドープのepi−SiGe層に設置されたマイクロレンズ、および
前記マイクロレンズ層に設置されたカラーフィルターを含む裏面照射型(BSI)センサデバイス。
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US13/409,924 US8772899B2 (en) | 2012-03-01 | 2012-03-01 | Method and apparatus for backside illumination sensor |
US13/409,924 | 2012-03-01 |
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JP2013183161A true JP2013183161A (ja) | 2013-09-12 |
JP5892963B2 JP5892963B2 (ja) | 2016-03-23 |
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US (1) | US8772899B2 (ja) |
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KR (3) | KR101909754B1 (ja) |
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WO2015045934A1 (ja) * | 2013-09-30 | 2015-04-02 | ソニー株式会社 | 半導体デバイスおよび製造方法、並びに電子機器 |
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US8815630B1 (en) * | 2013-02-20 | 2014-08-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methods |
US10571631B2 (en) | 2015-01-05 | 2020-02-25 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
KR102405745B1 (ko) | 2015-08-05 | 2022-06-03 | 삼성전자주식회사 | 반도체 장치 |
US9769398B2 (en) * | 2016-01-06 | 2017-09-19 | Microsoft Technology Licensing, Llc | Image sensor with large-area global shutter contact |
US10976491B2 (en) | 2016-11-23 | 2021-04-13 | The Research Foundation For The State University Of New York | Photonics interposer optoelectronics |
US10698156B2 (en) | 2017-04-27 | 2020-06-30 | The Research Foundation For The State University Of New York | Wafer scale bonded active photonics interposer |
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CN107919373B (zh) * | 2017-11-07 | 2019-03-12 | 德淮半导体有限公司 | 背照式图像传感器 |
CN108269815A (zh) * | 2018-01-10 | 2018-07-10 | 德淮半导体有限公司 | Cmos图像传感器及其形成方法 |
US10892295B2 (en) * | 2018-01-10 | 2021-01-12 | Microsoft Technology Licensing, Llc | Germanium-modified, back-side illuminated optical sensor |
WO2019195441A1 (en) | 2018-04-04 | 2019-10-10 | The Research Foundation For The State University Of New York | Heterogeneous structure on an integrated photonics platform |
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FR3083000A1 (fr) * | 2018-06-21 | 2019-12-27 | Soitec | Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat |
TWI829761B (zh) | 2018-11-21 | 2024-01-21 | 紐約州立大學研究基金會 | 具有積體雷射的光學結構 |
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KR20130100661A (ko) | 2013-09-11 |
TW201338143A (zh) | 2013-09-16 |
KR101897433B1 (ko) | 2018-09-10 |
JP5892963B2 (ja) | 2016-03-23 |
TWI580016B (zh) | 2017-04-21 |
KR20150096368A (ko) | 2015-08-24 |
US20130228886A1 (en) | 2013-09-05 |
KR20180021015A (ko) | 2018-02-28 |
KR101909754B1 (ko) | 2018-10-18 |
US8772899B2 (en) | 2014-07-08 |
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